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The study demonstrates high‐quality pulsed‐laser‐deposited (PLD) barium titanate (BTO) thin‐films on a magnesium oxide substrate. The frequency response of the relative permittivity (dielectric constant) and the linear electro‐optical coefficient (Pockels coefficient) are measured. At 0.2 GHz, the Pockels coefficient is fitted to be r42 ≈ 1030 pm V−1. It decreases to ≈390 pm V−1 at 10 GHz after which it remains constant up to 70 GHz. The unbiased BTO permittivity is measured to be εa ≈ 7600 at 0.2 GHz, dropping to ≈1100 at 67 GHz, while the biased BTO had a permittivity εa ≈ 2000 at 0.2 GHz, dropping to ≈500 at 67 GHz. These results fill an important experimental characterization gap for high‐speed BTO applications and show the high quality of PLD‐grown BTO films. Lastly, the material's crystalline quality is characterized and the domain distribution is imaged. The findings enable the design and fabrication of a new generation of BTO‐based components for sensing and communications. [ABSTRACT FROM AUTHOR]

David Moore is Professor Emeritus of Statistics at Purdue University. He served as the first President of the International Association for Statistical Education (IASE) from 1993-1995 and as President of the American Statistical Association (ASA) in 1998. He is a Fellow of the ASA and of the IMS and was awarded the ASA's Founders Award in 2001. He has written several influential, widely used textbooks for introductory statistics. This interview took place via email on May 3, 2013-June 12, 2013. Moore discusses the changes he has seen in statistics education over the past 20 years and offers advice to educators who may be new to this field.

As the reach of optical communications continues to shrink, photonics is moving from rack-to-rack datacom links to centimeter-scale in-computer applications (computercom) where different architectures are needed. Integrated optical microring resonators (MRRs) are emerging as an attractive choice for fulfilling the more stringent area and efficiency requirements: They offer scaling by wavelength division multiplexing (WDM) and high bandwidth densities. In this paper we present compact electro-optical transmit (TX) and receive (RX) macros for computercom monolithically integrated in 45 nm CMOS. They operate with MRR modulators and photodetectors and include all necessary electronics and optics to enable optical links between on-chip data sources and sinks. A most compact implementation for thermal stabilization was enabled by sensing the optical device's bias currents in the driving electronics instead of using external operating point sensing optics. Using a field-effect transistor as heating element — as is possible in monolithic integration platforms — further reduces area and power necessary for thermal control. The TX macro is shown to work for data rates up to 16 Gb/s with a 5.5 dB extinction ratio (ER) and 2.4 dB insertion loss (IL). The RX macro demonstrates a sensitivity of 71 µApp at 12 Gb/s for a BER ≤ 10−10. An intra-chip link built with the macros achieves ≤2.35 pJ/b electrical efficiency and a BER ≤10−10 at 10 Gb/s. Both macros are realized within 0.0073 mm2 which amounts to 1.4 Tb/s/mm2 bandwidth density per macro. [ABSTRACT FROM AUTHOR]

A dual sideband reception scheme for radio-over fiber (RoF) links is introduced. It is shown that the new receiver can increase the performance of noise-limited systems by up to 3 dB (2.97 dB in a lab back-to-back experiment). The receiver scheme exploits the fact that current RoF links do not realize their full potential. This is because in typical RoF receivers, the radio-frequency (RF) signals are mapped back to the optical domain by means of electro-optical modulator. In this process energy typically is lost as only one of the two generated sidebands is subsequently used. The suggested receiver exploits the signal of both sidebands. The receiver scheme was subsequently tested in a full optical-RF-optical transmission link at RF carrier frequencies of 228 GHz over a free-space channel spanning distances of 1400 m for symbol rates of up to 48 Gbaud 4 QAM. Here, we could achieve SNR improvements of up to 2.6 dB.

This paper introduces a simple method for the measurement of the relative permittivity and the Pockels coefficient of electro-optic (EO) materials in a waveguide up to sub-THz frequencies. By miniaturizing the device and making use of plasmonics, the complexities of traditional methods are mitigated. This work elaborates the fabrication tolerance and simplicity of the method, and highlights its applicability to various materials, substrates and configurations. The method is showcased using drop-casted perovskite barium titanate (BaTiO3, BTO) nano-particle thin-films and it has previously been used to measure epitaxial thin film BTO. In this work we show the effective relative permittivity of drop casted BTO to be ε eff ∼ 30 at 200 MHz, dropping to ∼ 18 at 67 GHz and similarly, the effective Pockels coefficient was found to be r eff ∼ 16 at 350 MHz and ∼ 8 at 70 GHz. These values are a factor > 50 below the values found for thin film BTO. Yet, the fact that the method can be applied to such different samples and Pockels strengths gives testimony to its versatility and sensitivity.