1. Self-organized superlattice formation during crystal growth from continuous beam fluxes
- Author
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Lim Cw, Joseph E Greene, Baker J, Bratland Ka, Wen Jg, Y. L. Foo, Moon Dw, and B. Cho
- Subjects
Materials science ,Chemical physics ,Superlattice ,Atom ,Dangling bond ,Nucleation ,General Physics and Astronomy ,Nanotechnology ,Crystal growth ,Sticking probability ,Layer (electronics) ,Molecular beam epitaxy - Abstract
Alloy superlattice structures consisting of alternating Si-rich and C-rich layers form spontaneously during gas-source molecular beam epitaxy of Si 1 - y C y on Si(001) from constant Si 2 H 6 and CH 3 SiH 3 precursor fluxes at T s = 725-750°C. The self-organized patterning is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich layer, strain-driven C segregation to the subsurface results in charge transfer from surface Si atom dangling bonds to C backbonds. This decreases the Si 2 H 6 sticking probability, and, hence, the instantaneous deposition rate, thereby enhancing C segregation. The Si-rich layer continues until a critical C coverage is reached allowing nucleation of a C-rich layer which grows until the excess subsurface C is depleted. The process then repeats with periods tunable through the choice of T s and y a v g .
- Published
- 2003