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2. Anderson transition in compositionally graded p-AlGaN.

3. 229 nm UV LEDs using p-type silicon for increased hole injection

4. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

5. High p-conductivity in AlGaN enabled by polarization field engineering

6. Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy.

7. High conductivity and low activation energy in p-type AlGaN

8. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

9. On the conduction mechanism in compositionally graded AlGaN

10. UVC optoelectronics based on AlGaN on AlN single crystal substrates

11. Design of AlGaN-based quantum structures for low threshold UVC lasers.

12. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

15. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

16. Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

20. P-type silicon as hole supplier for nitride-based UVC LEDs

23. 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

24. High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

25. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

30. High-Reflectivity DUV Mirrors Prepared by Direct Sputtering

32. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

33. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

36. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

37. Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

38. On the origin of the 265 nm absorption band in AlN bulk crystals

40. (Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

41. Band-Bending of Ga-Polar GaN Interfaced with Al2O3through Ultraviolet/Ozone Treatment

47. Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

49. (Invited)X-Ray Metrology of AlN Single Crystal Substrates

50. Strained Layer Superlattice Solar Cells

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