1. Commande rapproch\'ee d'un IGBT pour l'att\'enuation des perturbations \'electromagn\'etiques
- Author
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Martinez-Padron, Daniel Sting, Patin, Nicolas, and Monmasson, Eric
- Subjects
Electrical Engineering and Systems Science - Systems and Control - Abstract
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses. Several driving methods to reduce EMI have been proposed in the literature. In this work, a driving method based on the control of a grid current profile, made possible by new drivers available on the market, is proposed. This is based on the gate-source voltage of transistor as as a function of the charge injected into the gate. In order to demonstrate the performance of this method, it is evaluated by SPICE simulation using a figure of merit that enables it to be compared quantitatively with a reference method known as CATS (Commande autour de la Tension de Seuil)., Comment: in French language, SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), 5 - 7 JUILLET 2023, LILLE, FRANCE
- Published
- 2023