Search

Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications., Comment: 22 pages, Comments welcome

Trapped materials at the interfaces of two-dimensional heterostructures (HS) lead to reduced coupling between the layers, resulting in degraded optoelectronic performance and device variability. Further, nanobubbles can form at the interface during transfer or after annealing. The question of what is inside a nanobubble, i.e. the trapped material, remains unanswered, limiting the studies and applications of these nanobubble systems. In this work, we report two key advances. Firstly, we quantify the interface quality using RAW-format optical imaging, and distinguish between ideal and non-ideal interfaces. The HS-substrate ratio value is calculated using a transfer matrix model, and is able to detect the presence of trapped layers. The second key advance is identification of water as the trapped material inside a nanobubble. To the best of our knowledge, this is the first study to show that optical imaging alone can quantify interface quality, and find the type of trapped material inside spontaneously formed nanobubbles. We also define a quality index parameter to quantify the interface quality of HS. Quantitative measurement of the interface will help answer the question whether annealing is necessary during HS preparation, and will enable creation of complex HS with small twist angles. Identification of the trapped materials will pave the way towards using nanobubbles for novel optical and engineering applications.

Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no expected defect creation. We find clear signatures of defect creation in monolayer (ML) MoS2 at these voltages. Evolution of E' and A1' Raman modes with electron dose, and appearance of defect activated peaks indicate defect formation. To simulate Raman spectra of MoS2 at realistic defect distributions, while retaining density-functional theory accuracy, we combine machine-learning force fields for phonons and eigenmode projection approach for Raman tensors. Simulated spectra agree with experiments, with sulphur vacancies as suggested defects. We decouple defects, doping and carbonaceous contamination using control (hBN covered and encapsulated MoS2) samples. We observe cryogenic PL quenching and defect peaks, and find that carbonaceous contamination does not affect defect creation. These studies have applications in photonics and quantum emitters., Comment: 49 pages, 24 figures, 4 tables

Optical contrast is the most common preliminary method to identify layer number of two-dimensional (2D) materials, but is seldom used as a confirmatory technique. We explain the reason for variation of optical contrast between imaging systems. We introduce a universal method to quantify the layer number using the RGB (red-green-blue) and RAW optical images. For RGB images, the slope of 2D flake (MoS2, WSe2, graphene) intensity vs. substrate intensity is extracted from optical images with varying lamp power. The intensity slope identifies layer number and is system independent. For RAW images, intensity slopes and intensity ratios are completely system and intensity independent. Intensity slope (for RGB) and intensity ratio (for RAW) are thus universal parameters for identifying layer number. A Fresnel-reflectance-based optical model provides an excellent match with experiments. Further, we have created a MATLAB-based graphical user interface that can identify layer number rapidly. This technique is expected to accelerate the preparation of heterostructures, and fulfil a prolonged need for universal optical contrast method.

Technological advancement towards the quantum era requires secure communication, quantum computation, and ultra-sensitive sensing capabilities. Layered quantum materials (LQMs) have remarkable optoelectronic and quantum properties that can usher us into the quantum era. Electron microscopy is the tool of choice for measuring these LQMs at an atomic and nanometer scale. On the other hand, electron-irradiation of LQMs can modify various material properties, including the creation of structural defects. We review different types of structural defects, as well as electron elastic- and inelastic-scattering induced processes. Controlled modification of optoelectronic and quantum properties of LQMs using electron-irradiation, including creation of single photon emitters is discussed. Protection of electron-irradiation induced damage of LQMs via encapsulation by other layered materials is encouraged. We finally give insights into challenges and opportunities, including creating novel structures using an electron beam., Comment: 16 pages, 4 figures