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We observed varying thermal quenching behavior of the yellow luminescence band near 2.2 eV in different GaN samples. In spite of the different behavior, the yellow band in all the samples is caused by the same defect—the YL1 center. In conductive n-type GaN, the YL1 band quenches with exponential law, and the Arrhenius plot reveals an ionization energy of ∼0.9 eV for the YL1 center. In semi-insulating GaN, an abrupt and tunable quenching of the YL1 band is observed, where the apparent activation energy in the Arrhenius plot is not related to the ionization energy of the defect. In this case, the ionization energy can be found by analyzing the shift of the characteristic temperature of PL quenching with excitation intensity. We conclude that only one defect, namely, the YL1 center, is responsible for the yellow band in undoped and doped GaN samples grown by different techniques. [ABSTRACT FROM AUTHOR]

This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication. [ABSTRACT FROM AUTHOR]

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi- polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 x 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers. [ABSTRACT FROM AUTHOR]

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells. [ABSTRACT FROM AUTHOR]

We report high-voltage regrown nonpolar ${m}$ -plane p-n diodes on freestanding GaN substrates. A high blocking voltage of 540 V at ~1 mA/cm $^{\textsf {2}}$ (corresponding to an electric field of E ~ 3.35 MV/cm), turn- ON voltages between 2.9 and 3.1 V, specific on-resistance of 1.7 $\text{m}\Omega \cdot \textsf {cm}^{\textsf {2}}$ at 300 A/cm $^{\textsf {2}}$ , and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O, and C interfacial impurity levels up to $\textsf {2}\times \textsf {10}^{\textsf {17}}$ cm $^{-\textsf {3}}$ , $\textsf {8}\times \textsf {10}^{\textsf {17}}$ cm $^{-\textsf {3}}$ , and $\textsf {1}\times \textsf {10}^{\textsf {19}}$ cm $^{-\textsf {3}}$ , respectively, at the metallurgical junction of ${m}$ -plane, p-n diodes do not result in very early breakdown in the reverse bias although the off-state leakage current in the forward bias is affected. The impact of the growth interruption/regrowth on diode performance is also investigated. [ABSTRACT FROM AUTHOR]

We extract the injection efficiency as a function of current density in single-quantum-well semipolar ( 20 2 ¯ 1 ¯ ) InGaN/GaN light-emitting diodes (LEDs) using small-signal RF measurements and rate equation analysis of the dominant carrier mechanisms. The rate equations are used to derive a small-signal equivalent circuit that yields expressions for the modulation response and the input impedance of the LED. Simultaneous fitting of the modulation response and the input impedance of the circuit to the measured modulation response and the input impedance of the LED gives the differential carrier lifetime, the net differential carrier escape time from the active region, and the differential recombination lifetime in the cladding layers. The extracted lifetimes are used to calculate the injection efficiency of the LED at various current densities. Carrier leakage from the active region results in an injection efficiency below one at low current densities. At high current densities, the injection efficiency approaches one due to the higher recombination rate in the quantum well (QW) and the lower carrier leakage. Analysis of the lifetimes shows that the higher recombination rate in the QW results in a slower increase in the carrier population in the QW compared to that in the cladding layers. However, the recombination current in the QW is generally higher than that in the cladding, leading to high injection efficiency at high current densities. The data are consistent with a Coulomb-enhanced capture process. The high injection efficiency obtained at high current densities rules out injection-related mechanisms as the primary cause of efficiency droop in semipolar ( 20 2 ¯ 1 ¯ ) InGaN/GaN LEDs. [ABSTRACT FROM AUTHOR]

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar ( 20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40–80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs. [ABSTRACT FROM AUTHOR]

Anoikis resistance or evasion of cell death triggered by cell detachment into suspension is a hallmark of cancer that is concurrent with cell survival and metastasis. The effects of frequent matrix detachment encounters on the development of anoikis resistance in cancer remains poorly defined. Here we show using a panel of ovarian cancer models, that repeated exposure to suspension stress in vitro followed by attached recovery growth leads to the development of anoikis resistance paralleling in vivo development of anoikis resistance in ovarian cancer ascites. This resistance is concurrent with enhanced invasion, chemoresistance and the ability of anoikis adapted cells to metastasize to distant sites. Adapted anoikis resistant cells show a heightened dependency on oxidative phosphorylation and can also evade immune surveillance. We find that such acquired anoikis resistance is not genetic, as acquired resistance persists for a finite duration in the absence of suspension stress. Transcriptional reprogramming is however essential to this process, as acquisition of adaptive anoikis resistance in vitro and in vivo is exquisitely sensitive to inhibition of CDK8/19 Mediator kinase, a pleiotropic regulator of transcriptional reprogramming. Our data demonstrate that growth after recovery from repeated exposure to suspension stress is a direct contributor to metastasis and that inhibition of CDK8/19 Mediator kinase during such adaptation provides a therapeutic opportunity to prevent both local and distant metastasis in cancer., Competing Interests: Conflict of interest statement : E.V.B. is a consultant of Senex Biotechnology, Inc

The ascites ecosystem in ovarian cancer is inhabited by complex cell types and is bathed in an environment rich in cytokines, chemokines, and growth factors that directly and indirectly impact metabolism of cancer cells and tumor associated cells. This milieu of malignant ascites, provides a 'rich' environment for the disease to thrive, contributing to every aspect of advanced ovarian cancer, a devastating gynecological cancer with a significant gap in targeted therapeutics. In this perspective we focus our discussions on the 'acellular' constituents of this liquid malignant tumor microenvironment, and how they influence metabolic pathways. Growth factors, chemokines and cytokines are known modulators of metabolism and have been shown to impact nutrient uptake and metabolic flexibility of tumors, yet few studies have explored how their enrichment in malignant ascites of ovarian cancer patients contributes to the metabolic requirements of ascites-resident cells. We focus here on TGF-βs, VEGF and ILs, which are frequently elevated in ovarian cancer ascites and have all been described to have direct or indirect effects on metabolism, often through gene regulation of metabolic enzymes. We summarize what is known, describe gaps in knowledge, and provide examples from other tumor types to infer potential unexplored roles and mechanisms for ovarian cancer. The distribution and variation in acellular ascites components between patients poses both a challenge and opportunity to further understand how the ascites may contribute to disease heterogeneity. The review also highlights opportunities for studies on ascites-derived factors in regulating the ascites metabolic environment that could act as a unique signature in aiding clinical decisions in the future., Competing Interests: Declaration of competing interest Authors have no conflicts to declare., (Copyright © 2022 Elsevier Ltd. All rights reserved.)

Growth factors in tumor environments are regulators of cell survival and metastasis. Here, we reveal the dichotomy between TGF-β superfamily growth factors BMP and TGF-β/activin and their downstream SMAD effectors. Gene expression profiling uncovers SOX2 as a key contextual signaling node regulated in an opposing manner by BMP2, -4, and -9 and TGF-β and activin A to impact anchorage-independent cell survival. We find that SOX2 is repressed by BMPs, leading to a reduction in intraperitoneal tumor burden and improved survival of tumor-bearing mice. Repression of SOX2 is driven by SMAD1-dependent histone H3K27me3 recruitment and DNA methylation at SOX2's promoter. Conversely, TGF-β, which is elevated in patient ascites, and activin A can promote SOX2 expression and anchorage-independent survival by SMAD3-dependent histone H3K4me3 recruitment. Our findings identify SOX2 as a contextual and contrastingly regulated node downstream of TGF-β members controlling anchorage-independent survival and metastasis in ovarian cancers., Competing Interests: Declaration of interests The authors declare no competing interests., (Copyright © 2022 The Authors. Published by Elsevier Inc. All rights reserved.)

Metastatic growth of ovarian cancer cells into the peritoneal cavity requires adaptation to various cellular stress factors to facilitate cell survival and growth. Here, we demonstrate the role of PVT1, one such stress induced long non-coding RNA, in ovarian cancer growth and metastasis. PVT1 is an amplified and overexpressed lncRNA in ovarian cancer with strong predictive value for survival and response to targeted therapeutics. We find that expression of PVT1 is regulated by tumor cells in response to cellular stress, particularly loss of cell-cell contacts and changes in matrix rigidity occurring in a YAP1-dependent manner. Induction of PVT1 promotes tumor cell survival, growth, and migration. Conversely, reducing PVT1 levels robustly abrogates metastatic behavior and tumor cell dissemination in cell lines and syngeneic transplantation models in vivo. We find that reducing PVT1 causes widespread changes in the transcriptome leading to alterations in cellular stress response and metabolic pathways including doxorubicin metabolism, which impacts chemosensitivity. Together, these findings implicate PVT1 as a promising therapeutic target to suppress metastasis and chemoresistance in ovarian cancer., (© 2022 Tabury et al.)

Epithelial ovarian cancer (EOC) is a leading cause of cancer-related death in women. Late-stage diagnosis with significant tumor burden, accompanied by recurrence and chemotherapy resistance, contributes to this poor prognosis. These morbidities are known to be tied to events associated with epithelial-mesenchymal transition (EMT) in cancer. During EMT, localized tumor cells alter their polarity, cell-cell junctions, cell-matrix interactions, acquire motility and invasiveness and an exaggerated potential for metastatic spread. Key triggers for EMT include the Transforming Growth Factor-β (TGFβ) family of growth factors which are actively produced by a wide array of cell types within a specific tumor and metastatic environment. Although TGFβ can act as either a tumor suppressor or promoter in cancer, TGFβ exhibits its pro-tumorigenic functions at least in part via EMT. TGFβ regulates EMT both at the transcriptional and post-transcriptional levels as outlined here. Despite recent advances in TGFβ based therapeutics, limited progress has been seen for ovarian cancers that are in much need of new therapeutic strategies. Here, we summarize and discuss several recent insights into the underlying signaling mechanisms of the TGFβ isoforms in EMT in the unique metastatic environment of EOCs and the current therapeutic interventions that may be relevant.

Given the great demand for biopolymer and protein-based products from renewable resources, synthesis of a keratin-based hydrogel is presented herein. In this work, a novel hydrogel of poly(γ-glutamic acid) (γ-PGA) and keratin was synthesized through facile EDC·HCl/HOBt chemistry. Since keratin main chain is rich in amino side groups, carboxyl groups in γ-PGA were crosslinked with multi terminated amine groups in keratin. In the following, the hydrogel characteristics, including swelling ratio (2010% at molar ratio of HOBt/EDC = 0.105), in vitro degradation and mass loss (about 20% at day 21 for the aforementioned sample), chemical decomposition and the rheological properties were investigated. The chemical activator agents, enhanced the elastic modulus of swollen hydrogel from around 1000 to 4000 Pa by increasing the crosslinking degree. Despite good biocompatibility for cell growth, some kind of self-assembled keratin hydrogels are not suitable for microscopic observation while the γ-PGA-Keratin hydrogel in our study is transparent. The γ-PGA-Keratin hydrogels possess significant features of rapid hydrogel formation in seconds, maximum swelling ratio of about 2500% maximum elastic modulus (stiffness) of about 4.5 kPa (for the swollen sample) with controllable matrix pore size. For further application, the biocompatibility of the γ-PGA-Keratin hydrogel was assessed by live/dead assay. Recent studies have demonstrated the effect of hydrogel porosity, water absorbing and stiffness on cell spreading, proliferation and differentiation of mesenchymal stem cells. Bone marrow mesenchymal stem cells could be differentiated into various cell fates depending on the elastic modulus of materials they are cultured on. We carried out a statistical study (to skip the cell work labor) to predetermine the proper working span in which we can gain a hydrogel to cover all features needed to be applied for some application like cartilage repair., (Copyright © 2019 Elsevier B.V. All rights reserved.)

Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization technique to decouple these processes under electrical injection and determine their individual roles in droop phenomena is lacking. In this work, we investigate thermal and efficiency droop in electrically injected single-quantum-well InGaN/GaN LEDs by decoupling the inherent radiative efficiency, injection efficiency, carrier transport, and thermal effects using a comprehensive rate equation approach and a temperature-dependent pulsed-RF measurement technique. Determination of the inherent recombination rates in the quantum well confirms efficiency droop at high current densities is caused by a combination of strong non-radiative recombination (with temperature dependence consistent with indirect Auger) and saturation of the radiative rate. The overall reduction of efficiency at elevated temperatures (thermal droop) results from carriers shifting from the radiative process to the non-radiative processes. The rate equation approach and temperature-dependent pulsed-RF measurement technique unambiguously gives access to the true recombination dynamics in the QW and is a useful methodology to study efficiency issues in III-nitride LEDs.

The objective of this work was to engineer self-assembled nanoparticles (NPs) for on-demand release of bone morphogenetic protein-2 (BMP2) and vascular endothelial growth factor (VEGF) in response to enzymes secreted by the migrating human mesenchymal stem cells (hMSCs) and human endothelial colony forming cells (ECFCs) to induce osteogenesis and vasculogenesis. Gene expression profiling experiments revealed that hMSCs and ECFCs, encapsulated in osteogenic/vasculogenic hydrogels, expressed considerable levels of plasminogen, urokinase plasminogen activator and its receptor uPAR, and tissue plasminogen activator. Therefore, the plasmin-cleavable lysine-phenylalanine-lysine-threonine (KFKT) was used to generate enzymatically cleavable NPs. The acetyl-terminated, self-assembling peptide glycine-(phenylalanine) 3 GFFF-ac and the plasmin-cleavable GGKFKTGG were reacted with the cysteine-terminated CGGK(Fmoc/MTT) peptide through the MTT and Fmoc termini, respectively. The difunctional peptide was conjugated to polyethylene glycol diacrylate (PEGDA) with molecular weights (MW) ranging from 0.5 to 7.5 kDa, and the chain ends of the PEG-peptide conjugate were terminated with succinimide groups. After self-assembly in aqueous solution, BMP2 was grafted to the self-assembled, plasmin-cleavable PEG-based (P x SPCP) NPs for on-demand release. The NPs' stability in aqueous solution and that of the grafted BMP2 were strongly dependent on PEG MW. P2SPCP NPs showed high particle size stability, BMP2 grafting efficiency, grafted protein stability, and high extent of osteogenic differentiation of hMSCs. The localized and on-demand release of BMP2 from P x SPCP NPs coencapsulated with hMSCs in the linear polyethylene glycol- co -lactide acrylate patterned hydrogel with microchannels encapsulating hMSCs + ECFCs and VEGF-conjugated nanogels resulted in the highest extent of osteogenic and vasculogenic differentiation of the encapsulated cells compared to directly added BMP2/VEGF. The on-demand release of BMP2 from P x SPCP NPs not only enhances osteogenesis and vasculogenesis but also potentially reduces many undesired side effects of BMP2 therapy in bone regeneration.

Impact Statement: Millions of people every year develop scars in response to skin injuries after surgery, trauma, or burns with significant undesired physical and psychological effects. This review provides an update on engineering strategies for scar-free wound healing and discusses the role of different cell types, growth factors, cytokines, and extracellular components in regenerative wound healing. The use of pro-regenerative matrices combined with engineered cells with less intrinsic potential for fibrogenesis is a promising strategy for achieving scar-free skin tissue regeneration.

A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

Impact Statement: The higher regenerative capacity of fetal articular cartilage compared with the adult is rooted in differences in cell density and matrix composition. We hypothesized that the zonal organization of articular cartilage can be engineered by encapsulation of mesenchymal stem cells in a single superficial zone-like matrix followed by sequential addition of zone-specific growth factors within the matrix, similar to the process of fetal cartilage development. The results demonstrate that the zonal organization of articular cartilage can potentially be regenerated using an injectable, monolayer cell-laden hydrogel with sequential release of growth factors.

Objectives: Kidney retransplant is increasingly performed, but patient survival is controversial. The aim of this study was to evaluate the outcomes of patients with second kidney grafts and compare survival rates of recipients with first and second kidney transplant procedures., Materials and Methods: This was a retrospective study analyzing records from the Shiraz University of Medical Sciences transplant ward. Survival rates of retrans?lanted patients were compared with a randomly selected group of first kidney recipients. Factors related to retransplant survival were evaluated. Data were analyzed by SPSS version 16.0, and P < .05 was consi?ered as significant., Results: This study included 200 patients with first kidney transplants and 68 patients with kidney retransplants. We found that 1-, 3-, 5-, and 7-year graft survival rates were 91.9%, 87.2% ,86.3%, and 86.3% among retransplanted patients versus 98.3%, 95.4%, 90.2%, and 88.7% among the first transplant group (P = .130). Hospital stay duration after transplant, kidney rejection rate during hospitalization, delayed graft function, and creatinine levels at discharge were significantly associated with survival in retransplanted patients (P < .05)., Conclusions: Kidney retransplants can yield desirable outcomes and is the treatment of choice in patients who have lost their graft. Careful screening for risk factors should be consider for obtaining better results in second kidney transplant procedures.

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar (202¯1¯) InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 A/cm 2 to 10 kA/cm 2 , and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density (n) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative (A), radiative (B), and Auger (C) recombination coefficients and their n-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher A and a nearly two-fold higher B0 for this semipolar orientation compared to that of c-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar (202¯1¯) is found to be lower than the carrier density in c-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower C0 compared to c-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher B 0 coefficient, and lower C 0 (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar (202¯1¯) LEDs.