1. Unprecedented Thermoelectric Power Factor in SiGe Nanowires Field-Effect Transistors
- Author
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Mohsen Y. Tafti, Henry H. Radamson, Mohammad Noroozi, Bejan Hamawandi, Ganesh Jayakumar, Adem Ergül, Zoran Ikonic, Mounir Mensi, Lars Hultman, Katayoun Zahmatkesh, Jun Lu, Muhammet S. Toprak, and Saulius Marcinkevicius
- Subjects
010302 applied physics ,Materials science ,business.industry ,Nanowire ,Insulator (electricity) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Thermoelectric effect ,Optoelectronics ,Wafer ,Field-effect transistor ,0210 nano-technology ,business ,Thermoelectric power factor ,Cmos compatible - Abstract
In this work, a novel CMOS compatible process for Si-based materials has been presented to form SiGe nanowires (NWs) on SiGe On Insulator (SGOI) wafers with unprecedented thermoelectric (TE) power ...
- Published
- 2017
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