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Wide band gap luminescent MoS2 quantum dots (QDs) and MoS2 nanocrystals (NCs) have been synthesized by using laser-assisted chemical vapour deposition and used as an electrode material in supercapacitors. Size-dependent properties of the MoS2 QDs and NCs were examined by UV–vis absorption, photoluminescence, and Raman spectroscopy. The morphological evolution of the NCs and QDs were characterized by using field emission scanning electron microscopy, high-resolution transmission electron microscopy, and atomic force microscopy. The as-synthesized uniform QDs with a size of ∼2 nm exhibited an extended electrochemical potential window of 0.9 V with a specific capacitance value of 255 F/g, while the NCs values were 205 F/g and 0.8 V and the pristine MoS2 with values of 105 F/g and 0.6 V at a scan rate of 1 mV s–1. A shorter conductive pathway and 3D quantum confinement of MoS2 QDs that exhibited a higher number of active sites ensure that the efficient charge storage kinetics along with the intercalation processes at the available edge sites enable significant widening of operating potential window and enhance the capacitance. The symmetric device constructed with the QDs showed a remarkable device capacitance of 50 F/g at a scan rate of 1 mV s–1 with an energy density of ∼5.7 W h kg–1 and achieved an excellent cycle stability of 10,000 consecutive cycles with ∼95% capacitance retention.

Bioactive carbon dots (C-dots) with ca. 4 nm were successfully produced with singular photophysical properties, low-toxicity and interesting immunological response. The optical properties of the C-dots were investigated and the “light-up” behaviour enabled them to be explored in glucose detection and bioimaging experiments (mitochondrial selective probe). C-dots were not selective to the tumour region and several fluorescent spots were visualized spread on animal bodies. The histology investigations showed that cancer-bearing mice treated with C-dots presented a large number of regions with necrosis and inflammatory infiltrates, which were not identified for cancer-bearing mice without the treatment. These results suggested that C-dots have the potential to be explored as an immune therapy agent for melanoma skin cancer.

Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I–V and C–V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I–V and C–V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C–V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices. The elaboration process and the characterization phase have been carried out at Nottingham University. The C–V characteristics have been measured at different temperature ranging from 20 to 400 K. The barrier height and effective density were than extracted from 1/(C/A)2 plot using heuristic algorithm which called ALO (Ant Lion Optimizer). The accuracy of the extraction method is verified through the gotten results.

While room temperature bulk mercury is liquid, it is solid in its nanoconfiguration (Ønano−Hg ≤ 2.4 nm). Conjugating the nanoscale size effect and the Laplace-driven surface excess pressure, Hg nanoparticles of Ønano−Hg ≤ 2.4 nm embedded in a 2-D turbostratic BN host matrix exhibited net crystallization at room temperature via the experimentally observed (101) & (003) diffraction Bragg peaks of the solid Hg rhombohedric α-phase. The observed crystallization is correlated to a surface atomic ordering of 7 to 8 reticular atomic planes of the rhombohedric α-phase. Such a novel size effect on the phase transition phenomena in Hg is conjugated to a potential Hg waste storage technology. Considering the vapor pressure of bulk Hg, RT solid nano-Hg confinement represents a viable green approach for Hg waste storage derived from modern halogen-efficient light technology.

An effective approach to determine thin film thickness ( d ) and optical constants ( n , k , α ) from transmittance spectrum with interference fringes is proposed. The developed strategy is based on applying the artificial bee colony (ABC) algorithm and Cauchy dispersion model. The accuracy test of this method has been assessed by using simulated and real tests. Simulated test is used to check the ability of ABC algorithm to determine the parameters of simulated transmittance spectra. Real test deals with the investigation of the determination approach on experimental measured transmittance spectra. Those spectra were measured from six elaborated samples of amorphous hydrogenated silicon (a-Si:H) thin films with different thicknesses, which will be used as an eco-friendly layer for solar cell applications. The obtained results noticeably show the high effectiveness of the developed strategy to accurately determine the thin film thickness and optical constants.

Electron beam evaporation technique is employed to synthesise TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 thin films (TFs) grown on (100) n-type GaAs substrates. Field emission gun-scanning electron microscope (FEG-SEM) results show that the TFs have a thickness of ~225 nm. The non- contact atomic force microscopy (NC-AFM) images shows the pore volume of the TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 TFs enhanced gradually. UV-Vis absorption measurements are performed on the samples to determine the main bandgap and defect level transition of the material. A unique modified Urbach theoretical model has been introduced to simulate the experimental absorption spectrum. The main bandgap energy of the TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 samples are calculated to be ~3.45 eV, 3.85 eV and 4.30 eV respectively. A gradual enhancement in main bandgap transition probability and decrease in defect level transition of the material has been observed with enhanced incorporation of Mg into the TiO2 host material. X-ray diffraction (XRD) is performed, which shows a continuous change in lattice constant of TiO2 with Mg. Current (I)-voltage (V) characteristics of the TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 Schottky devices revealed that the leakage current at −1 V was 1.28 × 10−6 A, 1.46 × 10−9 A and 2.44 × 10−10 A respectively. Capacitance (C)–voltage (V) measurements are performed on the devices at different frequencies. A theoretical simulation has been adopted by amending the delta depletion model at 1 MHz. The dielectric constant and the flat band voltage of the TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 devices are found to be 100, 120 and 160 and 16.1 V, 14.7 V and 9.7 V respectively. Hill-Coleman’s method shows a gradual enhancement of the density of interface states (Dit) with Mg concentration. The calculated Dit value of the TiO2, Mg0.1Ti0.9O2 and Mg0.2Ti0.8O2 TF devices are ~6.16 × 1010 eV−1 cm−2, 6.44 × 1010 eV−1 cm−2 and 1.11 × 1011 eV−1 cm−2 respectively. The observed C-V hysteresis confirms an enhancement in the charge retention into the film with increasing Mg concentration, which in turn improves the memory window (MW) from ~0.36 V (at±7 V) to ~0.67 V (at±7 V) and ~0.87 V (at±10 V) to ~1.0 V (at±10 V) with sweeping voltage.

Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices’ structures are almost identical, differing only in the growth temperature and thickness of the GaAs layers that cover each InAs QD layer. These differences induce significant changes in the solar energy conversion efficiency of the photovoltaic cells, as previously reported. In this work, a systematic investigation was carried out using deep level transient spectroscopy (DLTS) and Laplace DLTS measurements on control samples and solar cell devices, which have clearly shown that electrically active traps play an important role in the device figures of merit, such as open circuit voltage, short circuit current, and shunt resistance. In particular, it was found that the well-known EL2 defect negatively affects both the open circuit voltage and shunt resistance, more in structures containing QDs, as a consequence of the temperature cycle required to deposit them. Other unidentified defects, that are absent in samples in which the QDs were annealed at 700 °C, contribute to a reduction of the short circuit current, as they increase the Shockley-Read-Hall recombination. Photoluminescence results further support the DLTS-based assignments.

The band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition were reported. The spatial Bi profile and a certain amount of the Bi composition in the barrier layer were determined by HR-XRD measurements. Virtual Crystal Approximation and Valence Band Anti-Crossing models were used including strain effects to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence (PL) measurements were performed at a low temperature of 8 K as a function of excitation intensity. The PL spectra have shown asymmetric line shapes, which were fitted with different Gaussian functions. Comparing experimental PL results with calculated band edge energies, it was found that optical transition is a type I under low intensity excitation while the optical transition is switched from type I to type II due to the spatial changes in Bi concentrations. The band offsets Δ E c / Δ E v were also determined.

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction, micro-Raman at room temperature, and photoluminescence (PL) measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. X-ray diffraction results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties.

An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields directed parallel and perpendicular to the planes of the GaAs/Al X Ga 1 − X As heterostructure layers. In particular, phonon replicas on the current–voltage characteristics of the diode are investigated. In the second current derivatives a fine structure of replicas is found. The transformation of the structure of replicas in a perpendicular magnetic field can be qualitatively understood as a manifestation of the transition of polaron states to magnetopolaronic ones.

We report on the synthesis and enhanced thermal conductivity of stable Ag-decorated 2-D graphene nanocomposite in ethylene glycol based nanofluid by laser liquid solid interaction. A surfactant free nanofluid of Ag nanoparticles anchored onto the 2-D graphene sheets were synthesized using a two-step laser liquid solid interaction approach. In order to understand a pulsed Nd:YAG laser at the fundamental frequency (λ = 1,064 nm) to ablate Ag and graphite composite target submerged in ethylene glycol (EG) to form AgNPs decorated 2-D GNs-EG based nanofluid. From a heat transfer point of view, it was observed that the thermal conductivity of this stable Ag-graphene/EG is significantly enhanced by a factor of about 32.3%; this is highest reported value for a graphene based nanofluid.

International audience; Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of characterization techniques were used to investigate the effect of N incorporation and thermal annealing effect of GaPN/GaP epilayers for a N content between 0.5% and 3%. Our results have shown that as we increase the N content the PL peak energy presents a red shift which is explained by a band gap reduction. However, important effects of exciton localization on optical properties were also evidenced from cw and time resolved PL (PLRT) and magneto-PL. Our results have demonstrated that as the concentration of N is increased, exciton localization effect is enhanced. A substantial improvement of the optical quality and spin properties of the epilayers has been observed after thermal annealing which are significantly more important for samples with higher nitrogen contents.

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films.

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90–290 K temperature range and 50–2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (e’) shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200–290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Erbium doped Indium Oxide (In2O3:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In2O3 lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10−4 A for In2O3:Er TF based devices. The Au/In2O3:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In2O3/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In2O3:Er TFs from 10 K photoresponse. The Au/In2O3:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In2O3/Si devices. In addition, the Au/In2O3:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In2O3:Er/Si in the UV region as compared to Au/In2O3/Si.

Magnesium ions incorporated calcium phosphate was synthesized by wet chemical route and followed by microwave assisted method. XRD analysis was confirmed that the presence of calcium phosphate (hydroxyapatite). TEM analysis was exhibited rod-like morphology. XRF results were showed the percentage of calcium, phosphate, magnesium and oxygen. There was a slight blue shift observed in magnesium ions based samples. Higher magnesium (0.1 Mg-HAp) was revealed the greater discharging time with capacitance voltage (0.55 V). Magnesium based calcium phosphate was showed prolonged rate of drug release. At higher frequency, the Nyquist plot was showed the electrochemical behavior, however at lower frequency, revealed mass transfer process. Magnesium ions tailor the specific capacitance of calcium phosphate. Therefore, magnesium ions based phosphate samples could be an outstanding multifunctional candidate for drug release and supercapacitor applications.

Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman techniques have been employed to investigate the effect of the orientation of the substrates on the structural, electrically and optically active defects in dilute GaAs1−xBix epilayers structures having a Bi composition x = ~5.4%, grown by Molecular Beam Epitaxy (MBE) on (100) and (311)B GaAs planes. X-ray diffraction results revealed that the in-plane strain in the Ga(As,Bi) layer of the samples grown on (100)-oriented substrate (−0.0484) is significantly larger than that of the samples grown on (311)B-oriented substrate. The substrate orientation is found to have a noticeable impact on the Bi incorporation and the electrical properties of dilute GaAsBi Schottky diodes. The I-V characteristics showed that (100) Schottky diodes exhibited a larger ideality factor and higher barrier height compared with (311)B samples. The DLTS measurements showed that the number of electrically active traps were different for the two GaAs substrate orientations. In particular, three and two electron traps are detected in samples grown on (100) and (311)B GaAs substrates, respectively, with activation energies ranging from 0.12 to 0.41 eV. Additionally, one hole trap was observed only in sample grown on (100) substrates with activation energy 0.24 eV. The observed traps with small activation energies are attributed to Bi pair defects. The photoluminescence (PL) and Raman spectra have evidenced different compressive strain which affects considerably the optical properties. Furthermore, the PL spectra were also affected by different contributions of Bi- related traps which are different for different substrate orientation in agreement with DLTS results.

In this work, a recent heuristic method called Dragonfly Algorithm (DA) has been employed for the first time to investigate the temperature effect on the Schottky diode electrical parameters. Beryllium-doped Al0.29Ga0.71As Schottky diodes grown by molecular beam epitaxy (MBE) have been used to validate the suggested method. The proposed approach is based on the analysis of current-voltage-temperature (I–V-T) and capacitance-voltage (C–V) characteristics. Furthermore, the interface state density (Nss) as function of the difference between the surface state energy and valence band energy (Ess – Ev) was determined. The obtained results demonstrate the high efficiency of this strategy to accurately determine the electrical parameters and investigate their temperature dependency. This efficiency can be clearly remarked from the well fit between both predicted and measured current characteristics.

Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung method is used for this purpose, assuming a thermionic conduction mechanism. The extracted ideality factor decrease with increasing temperatures. But their values at low temperatures were found to be unrealistic. In order to explain this uncertainty, three assumptions were explored. Firstly an assumed inhomogeneous barrier height gave better parameters especially the Richardson constant but the ideality factor is still unrealistic at low temperatures. Secondly, by using numerical simulation, it was demonstrated that defects including interface states are not responsible for the apparent unrealistic Schottky diode parameters. The third assumption is the tunnelling mechanism through the barrier in the low temperature range. At these lower temperatures, the tunnelling mechanism was more suitable to explain the extracted parameters values.

Lanthanum (La) doped zinc oxide (ZnO) nanomaterials (LaxZn1-xO, x = 0.0, 0.03, 0.05, 0.07 M) were synthesized via co-precipitation method using zinc acetate, lanthanum nitrate as precursors, octylamine as capping and reducing agent. The structures, morphologies, optical activity and antibacterial properties of LaxZn1-xO were investigated by powder X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, High resolution scanning electron microscopy (HR-SEM), Energy dispersive X-ray (EDX), UV–Visible, Photoluminescence (PL) spectroscopy. The antibacterial activities of LaxZn1-xO were tested by modified disc diffusion method. The XRD results showed that the La3+ ions were successfully incorporated into the ZnO host, and the products were well-crystalline. The average size of undoped and doped La-doped ZnO was found to be in the ranges from 15.64 to 10.18 nm. In addition, the sphere-like nanoparticles morphology of LaxZn1-xO was confirmed by HR-SEM images. The band gap of La-doped ZnO nanoparticles were varied with the La3+ ions doping concentration. In addition, increasing the doping concentration of La3+ ions in ZnO increases the defects in ZnO lattice and hence resulting red-shift in UV emission, which indicate the presence of narrow band-gap in doped nanoparticles.