Search

The photoluminescence quantum yield (PLQY) of CsPbBr3 perovskite nanocrystals (NCs) prepared by the hot‐injection method can exceed 90%, which have attracted intensive attention for white light‐emitting diodes (WLEDs). However, the whole hot‐injection experiment requires air isolation and relatively high temperature. In addition, the poor stability of CsPbBr3 NCs impedes their applications. Here, a facile method is reported to synthesize CsPbBr3@ZrO2 NCs at room temperature in air. Owing to using ZrO2 coated CsPbBr3 NCs, the prepared CsPbBr3@ZrO2 NCs not only present a PLQY of 80% but also exhibit an enhanced stability to heat and moisture. Furthermore, WLEDs are fabricated with CsPbBr3@ZrO2 NCs and commercial red phosphors (CaAlSiN3:Eu2+) on blue LEDs chips. The fabricated WLEDs exhibit a correlated color temperature (CCT) of 4743 K and luminous efficacy as high as 64.0 Lm W–1. In addition, visible light communication with a high data rate of 33.5 Mbps is achieved using the WLEDs. This work provides a room temperature strategy to coat zirconia for CsPbBr3@ZrO2 NCs, benefiting to enhance the optical performance and stability, as well as the promotion of the great potentials in solid‐state illuminating and visible light communication applications. [ABSTRACT FROM AUTHOR]

In this work, we report a novel, to the best of our knowledge, strategy to improve the performance of UV-Vis self-powered CsPbBr 3 quantum dot (QD) based photodetectors (PDs) by ligand modification and poly(3-hexylthiophene) (P3HT) embedding. Compared with those based on pure QDs, modified PDs show a shortened response time by nearly ten times, and increases of maximum responsivity and specific detectivity by nearly 45 and 97 times, respectively. Such PDs also show a high stability with 90% of the initial photocurrent being maintained even after storage in ambient air without any encapsulation for 30 days.

With a high photoluminescence quantum yield (PLQY) being able to exceed 90% for those prepared by the hot injection method, CsPbBr3 quantum dots (QDs) have attracted intensive attention for white light-emitting diodes (WLEDs). However, the whole process is carried out in a 3-neck flask via air isolation and at a relatively high temperature. In addition, CsPbBr3 QDs suffer from poor stability under ambient atmosphere. In this work, an effective strategy through doping of Sn2+ ions at room-temperature is proposed to improve the emission efficiency and stability of CsPbBr3 QDs. Compared with pure CsPbBr3 QDs, a higher PLQY and a better stability are obtained. The detailed physical mechanism for this performance enhancement is discussed and described. An optimum result is found at an Sn2+ doping amount of 20%, which shows a high PLQY of 82.77%. WLEDs based on these 20% Sn2+ doped CsPbBr3 QDs are also studied, exhibiting a high color rendering index of 89 and a correlated color temperature (CCT) of 3954. The method proposed here provides an effective strategy to enhance the fluorescence and stability of CsPbBr3 QDs, which might have promising potential in the lighting fields.