Search

Your search keyword '"Mizokuro, Toshiko"' showing total 188 results
Start Over Author "Mizokuro, Toshiko"
188 results on '"Mizokuro, Toshiko"'

6. Enhancing NIR-to-visible photon upconversion in cast solid by introducing bulky substituents in rubrene and by suppressing back energy transfer

Author

Sawa, Akane, primary, Shimada, Shota, additional, Tripathi, Neeti, additional, Heck, Claire, additional, Tachibana, Hiroaki, additional, Koyama, Emiko, additional, Mizokuro, Toshiko, additional, Hirao, Yasukazu, additional, Kubo, Takashi, additional, Tamai, N., additional, Kuzuhara, Daiki, additional, Yamada, Hiroko, additional, and Kamada, Kenji, additional

Published
2023
Full Text
View/download PDF

21. Formation and characteristics of dispersion layers of organofluorine compounds in poly(methyl methacrylate) using a vacuum process

Author

Mochizuki, Hiroyuki, Mizokuro, Toshiko, Tanigaki, Nobutaka, and Hiraga, Takashi

Subjects
Organofluorine compounds -- Optical properties, Dispersion -- Analysis, Polymethylmethacrylate -- Optical properties, Physics
Abstract

Dispersion layers of organofluorine compounds in poly(methyl methacrylate) (PMMA) were formed by a vacuum process, and their thickness increased with treatment temperature and time. The concentration of organoflurine compounds was uniform throughout the dispersion the dispersion layer, which showed a lower refractive index than the initial PMMA because the organofluorine compound used here showered a lower refractive index.

Published
2005

26. Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

Author

Mizokuro, Toshiko, Yoneda, Kenji, Todokoro, Yoshihiro, and Kobayashi, Hikaru

Subjects
Silicon nitride -- Research, Plasma (Ionized gases) -- Research, Nitrogen -- Research, Thin films -- Research, Physics
Abstract

A new method for the formation of silicon oxynitride layers at low temperatures below 700 degrees C by use of nitrogen plasma generated by low energy electron impact was developed. Results showed that a large amount of nitrogen atoms can be included in the surface region. It is concluded that nitrogen ions react with SiO2 at the surface and the ions migrate toward the dielectric/Si interface.

Published
1999

37. Organic heterojunctions : Contact-induced molecular reorientation, interface states, and charge redistribution

Author

Opitz, Andreas, Wilke, Andreas, Amsalem, Patrick, Oehzelt, Martin, Blum, Ralf-Peter, Rabe, Juergen P., Mizokuro, Toshiko, Hoermann, Ulrich, Hansson, Rickard, Moons, Ellen, Koch, Norbert, Opitz, Andreas, Wilke, Andreas, Amsalem, Patrick, Oehzelt, Martin, Blum, Ralf-Peter, Rabe, Juergen P., Mizokuro, Toshiko, Hoermann, Ulrich, Hansson, Rickard, Moons, Ellen, and Koch, Norbert

Abstract

We reveal the rather complex interplay of contact-induced re-orientation and interfacial electronic structure-in the presence of Fermi-level pinning-at prototypical molecular heterojunctions comprising copper phthalocyanine (H16CuPc) and its perfluorinated analogue (F16CuPc), by employing ultraviolet photoelectron and X-ray absorption spectroscopy. For both layer sequences, we find that Fermi-level (E-F) pinning of the first layer on the conductive polymer substrate modifies the work function encountered by the second layer such that it also becomes E-F-pinned, however, at the interface towards the first molecular layer. This results in a charge transfer accompanied by a sheet charge density at the organic/organic interface. While molecules in the bulk of the films exhibit upright orientation, contact formation at the heterojunction results in an interfacial bilayer with lying and co-facial orientation. This interfacial layer is not EF-pinned, but provides for an additional density of states at the interface that is not present in the bulk. With reliable knowledge of the organic heterojunction's electronic structure we can explain the poor performance of these in photovoltaic cells as well as their valuable function as charge generation layer in electronic devices.

Published
2016
Full Text
View/download PDF

45. Efficient triplet–triplet annihilation upconversion in binary crystalline solids fabricated viasolution casting and operated in airElectronic supplementary information (ESI) available: Theoretical methodology, sample preparation methods, details of spectroscopic characterization methods using microscopes, high-resolution spectrographs, quantum yield measurements with integration spheres, absorption and emission spectra of the compounds, polarization and SEM images, upconversion decay data, and additional threshold data for the upconversion. See DOI: 10.1039/c6mh00413j

Author

Kamada, Kenji, Sakagami, Yusuke, Mizokuro, Toshiko, Fujiwara, Yutaka, Kobayashi, Kenji, Narushima, Kaishi, Hirata, Shuzo, and Vacha, Martin

Abstract

Binary crystalline solids consisting of a sensitizer (Pt-octaethylporphyrin) and an emitter (9,10-diphenylanthracene (DPA) or its alkyl-strapped derivative (C7-sDPA)) were fabricated by solution casting under rapid drying conditions and found to show efficient triplet–triplet annihilation upconversion by the suppression of component segregation. Microspectroscopic studies of individual crystalline particles of the binary solids revealed threshold intensities as low as 5 mW cm−2, close to solar levels, and UC quantum yields of 20% were possible when using C7-sDPA as an emitter, even in air.

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results