779 results on '"Miyazaki, Seiichi"'
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2. Formation of germanene with free-standing lattice constant
3. Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(1 1 0) thin films on Ge(1 1 0)
4. Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core
5. Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core
6. Self-assembling mechanism of Si-QDs on thermally grown SiO2
7. Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties
8. Self-assembling formation of Si-QDs on SiO2 line patterns
9. Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs
10. (Invited) Formation and Characterization of Fe-Silicide Nanodots for Optoelectronic Application
11. Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
12. Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
13. Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
14. Self-assembling formation of Si-QDs on SiO2 line patterns.
15. Alignment control of self-assembling Si quantum dots
16. Evaluation of field emission properties from multiple-stacked Si quantum dots
17. Study on electroluminescence from multiply-stacking valency controlled Si quantum dots
18. Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots
19. Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy
20. Formation of Germanene with Free-Standing Lattice Constant
21. Characterization of magnesium channeled implantation layers in GaN(0001)
22. Evaluation of chemical structure and Si segregation of Al/Si(111)
23. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure
24. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface
25. Effects of Cl passivation on Al2O3/GaN interface properties
26. (Digital Presentation) Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots
27. Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
28. Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots
29. Evaluation of charge trapping properties of microcrystalline germanium thin films by Kelvin force microscopy
30. Impact of insertion of ultrathin TaO x layer at the Pt/TiO 2 interface on resistive switching characteristics
31. Characterization of chemical bonding features at metal/GeO 2 Interfaces by X-ray photoelectron spectroscopy
32. High-density formation of Ge quantum dots on SiO 2
33. Study on silicidation reaction of Fe nanodots with SiH4
34. Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique
35. Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure
36. Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces
37. Formation and characterization of hybrid nanodot stack structure for floating gate application
38. Needs and Challenges of Engineering Human-Resource Development
39. Growing Expectations of Engineering Education
40. Segregation control for ultrathin Ge layer in Al/Ge(111) system
41. Characterization of interfacial reaction and chemical bonding features of LaO x/HfO 2 stack structure formed on thermally-grown SiO 2/Si(1 0 0)
42. Effects of Cl passivation on Al2O3/GaN interface properties.
43. (Invited) Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots
44. Single germanene phase formed by segregation through Al(111) thin films on Ge(111)
45. Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
46. Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics
47. Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH 4
48. Effect of substrate temperature on plasma-enhanced self-assembling formation of high density FePt nanodots
49. Preface
50. Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures
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