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The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other issues related to variability impacting the yield are of concern. Herein we have investigated how the change in the Fin Architecture and Gate Length of the MOS device impacts the Threshold Voltage.

Simulation of Electron Transport through two dimensional(2D) waveguide using Quantum Transport Boundary Method (QTBM) is done. Specifically, as an example the results of modeling L-shaped contact for a rectangular waveguide are presented. 2D-QTBM approach can be used in any scenario where the vertical axis of the device structure is significantly large and therefore the 2D approximation would be considered valid. This method elegantly generalizes to arbitrary shaped waveguides., Comment: 4 Pages

The spurious states found in numerical implementations of envelope function models for semiconductor heterostructures and nanostructures are artifacts of the use of the centered-difference formula. They are readily removed by employing a first-order difference scheme. The technique produces none of the loss of accuracy that is commonly feared from lower-order formulations; the fidelity to the continuum band structure is actually improved. Moreover the stability is absolute, thus no adjustments to the model parameters are required. These properties are demonstrated in an explicit calculation of a 3-band model of a semiconductor superlattice., Comment: Significant revision; an explicit real-space computation of a superlattice structure is now included. The title was slightly modified to emphasize that we are addressing the problems introduced by discretization