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An all annealing-free solution-manufacturing is regarded as a technological advancement for the development of flexible organic solar cells (OSCs), which can prevent the distortion of plastic substrates, avoid destroying the active components of the devices, and simplify the device fabrication. Here, we report an efficient all annealing-free solution-processed flexible OSC integrated on a soft polyethylene (PE) substrate. The transparent anodes, hole-transport layers, active layers and electron-transport layers are solution-processed at room temperature without thermal annealing treatments. Thanks to both the as-developed gentle superacid doping and air-drying treatments at room temperature that enable a high-merit flexible anode on the soft PE substrates, the annealing-free flexible OSCs yield a high efficiency of 14.66% along with a high power-per-weight of 6.33 W g−1, which is close to that (15.73%) of thermally annealed rigid OSCs based on indium tin oxide anodes. Due to the mild annealing-free solution-processing and the soft PE substrates having an extremely low Young's modulus of only 0.2 GPa, the flexible OSCs maintain a high flexibility in a harsh bending test.

Background Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research. Purpose To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses. Materials and Methods Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature. Results The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior. Conclusion In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.

In-Ga-Zn-O (IGZO) nanometer thin-film transistors (TFTs) are promising candidates for liquid crystal display (LCD) divers and human body sensors. It is critically important to study the temperature...

Background As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups. Methods A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure. Results It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index. Conclusion These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous medical and non-medical applications. This is extremely helpful for future neuromorphic computational system implementation.

Background Transparent thin -film transistors (TFTs) have received a great deal of attention for medical sensors, OLED and medical display applications. Moreover, ultrathin nanomaterial layers are favored due to their more compact design architectures. Methods Here, transparent TFTs are proposed and were investigated under different stress conditions such as temperature and biases. Results Key electrical characteristics of the sensors, such as threshold voltage changes, illustrate their linear dependence on temperature with a suitable recovery, suggesting the potential of the devices to serve as medical temperature sensors. The temperature conditions changed in the range of 28°C to 40°C, which is within the standard human temperature testing range. The thickness of the indium-gallium-zinc oxide semiconductor layer was as thin as only 5-6 nm, deposited by mature radio-frequency sputtering which also showed good repeatability. Optimal bending durability caused by mechanical deformation was demonstrated via suitable electrical properties after up to 600 bending cycles, and by testing the flexible device at a different bending radii ranging from 48 mm to 18 mm. Conclusion In summary, this study suggests that the present transparent nano TFTs are promising candidates for medical sensors, OLED and displays which require transparency and stability.

Background Electronic devices which mimic the functionality of biological synapses are a large step to replicate the human brain for neuromorphic computing and for numerous medical research investigations. One of the representative synaptic behaviors is paired-pulse facilitation (PPF). It has been widely investigated because it is regarded to be related to biological memory. However, plasticity behavior is only part of the human brain memory behavior. Methods Here, we present a phenomenon which is opposite to PPF, i.e., paired-pulse inhibition (PPI), in nano oxide devices for the first time. The research here suggests that rather than being enhanced, the phenomena of memory loss would also be possessed by such electronic devices. The device physics mechanism behind memory loss behavior was investigated. This mechanism is sustained by historical memory and degradation manufactured by device trauma to regulate characteristically stimulated origins of artificial transmission behaviors. Results Under the trauma of a memory device, both the signal amplitude and signal time stimulated by a pulse are lower than the first signal stimulated by a previous pulse in the PPF, representing a new scenario in the struggle for memory. In this way, more typical human brain behaviors could be simulated, including the effect of age on latency and error generation, cerebellar infarct, trauma and memory loss pharmacological actions (such as those caused by hyoscines and nitrazepam). Conclusion Thus, this study developed a new approach for implementing the manner in which the brain works in semiconductor devices for improving medical research.

Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.

Chen P, Zhang X, Jiang K, et al. Int J Nanomedicine. 2019;14:10119–10122. Page 10120, left column, Materials And Methods section, line 2, the text “30 ~ 50 nm thick” should read “30 ~ 60 nm thick”. Page 10120, Figure 2, the Y axis “IDS(nA)” should read “IDS(pA)”. Figure 3 on page 10120, the authors have advised the figure was created using the wrong sample and therefore, is incorrect. The correct Figure 3 is shown below. Figure 3 The C-V curve of the present n-type TFTs could be easily changed to that of p-type TFTs. The authors apologize for these errors and advise they do not affect the results of the paper.

High porosity and surface areas of ordered mesoporous materials provide substantial capacity for loading of guest molecules and the well-defined morphology of such materials can control their transport for controlled release. Here, the loading and release of mitoxantrone from unmodified ordered mesoporous carbon films is monitored using UV/Vis spectroscopy. Organic-organic self-assembly of Pluronic F127 with phenolic resin leads to interconnected elliptical pores (≈2 nm) in the film after carbonization. Interestingly, the total loading (2.6 ± 0.4 μg/cm(2)) and release of mitoxantrone is independent of film thickness (50–400 nm), suggesting diffusion limitations in pore filling. With alternative template, the pore size increases to ≈5 nm and the mitoxantrone loading increases to 3.5 ± 0.9 μg/cm(2), but the loading still remains thickness independent. Using phosphate buffered saline at 37 °C, less than 60 % of the loaded mitoxantrone is readily released from the mesoporous carbon films over a two-week period. The release profile includes an initial burst with a modest fraction (< 20 %) of the loaded drug released within the first day, followed by a near linear release over the subsequent 5–9 days. Interestingly, the smaller pores (ca. 2 nm) release nearly 50 % more mitoxantrone over 2 weeks than the larger pores (ca. 5 nm), despite the lower initial loading. These results illustrate potential limitations as well as opportunities for the use of highly hydrophobic porous materials for the controlled release of hydrophobic biologically active compounds as drug delivery systems.

A two-step surface treatment was applied on the surfaces of polyacrylonitrile(PAN)-based carbon fibers (CFs) including the electrochemical oxidation process followed by grafting of silane coupling agent KH550. The evolution of the physiochemical structure of the fiber surface during the surface treatment was investigated using Infrared spectroscopy (IR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and surface tension/dynamic contact angle measurements. The results showed that the CF surface exhibited a significant increase in the relative content of oxygen-containing functional groups after surface treatment while its crystal structure had little change after the grafting of KH550 agents. Effects of surface treatment on the mechanical properties of CFs and the interfacial properties, including the interfacial shear strength (IFSS) and interlaminar shear strength (ILSS) of carbon fiber reinforced epoxy (CF/EP) composites were evaluated in detail. Both the electrochemical oxidation and the introduction of KH550 agents onto CF surfaces improved the IFSS and ILSS values of CF/EP composites by comparison with untreated fibers. In particular, the maximum interfacial properties of CF/EP composites were obtained by the electrochemical oxidation together with the grafting of KH550 agents onto CF surfaces.

Dai M, Wu Z, Qi S, et al. Int J Nanomedicine. 2020;15:1863–1870. The Authors, Editor and Publisher of International Journal of Nanomedicine have agreed to retract the published article. Concerns were raised by the Editor following the authors request to make several corrections to the published article. Many of the requested corrections related to data descriptions in the Materials and Methods and the Results and Discussion. Readers should note the Editor confirms the retraction is not due to academic misconduct but owing to the number of corrections reported within the article which were too numerous to be corrected in a standard corrigendum. The authors may consider republishing a corrected version of the article. The authors agreed with the decision to retract the article to maintain the preciseness of the publication record and wish to apologise for the number of corrections that were reported. Our decision-making was informed by our policy on publishing ethics and integrity and the COPE guidelines on retraction. The retracted article will remain online to maintain the scholarly record, but it will be digitally watermarked on each page as “Retracted”. This retraction relates to this paper

There is a continuous demand to reduce the size of the devices that form a unit circuit, such as logic gates and memory, to reduce their footprint and increase device integration. In order to achieve a highly efficient circuit architecture, optimizations need to be made in terms of device processing. However, the time involved in the current reduction of device sizes according to Moore’s Law has slowed down. Here, we propose a flexible transistor with ultra-thin IGZO (InGaZnO, indium-gallium-zinc-oxide) as the channel material, which not only scales down the footprints of multi-transistor logic gates but also combines the functions of the logic gates, memory, and sensors into a single cell. The transistor proposed here has an ultrathin semiconductor layer and can implement the typical functions of logic gates that conventionally have 2–6 transistors. Furthermore, it demonstrates the memory effect with a programming time as low as 5 ns. This design can also display various artificial synaptic behaviors. This new device design and structure can be adopted for the development of next-generation flexible electronics that require higher integration.

Uneven lithium (Li) electrodeposition hinders the wide application of high-energy-density Li metal batteries (LMBs). Current efforts mainly focus on the side-reaction suppression between Li and electrolyte, neglecting the determinant factor of mass transport in affecting Li deposition. Herein, guided Li+ mass transport under the action of a local electric field near magnetic nanoparticles or structures at the Li metal interface, known as the magnetohydrodynamic (MHD) effect, are proposed to promote uniform Li deposition. The modified Li+ trajectories are revealed by COMSOL Multiphysics simulations, and verified by the compact and disc-like Li depositions on a model Fe3 O4 substrate. Furthermore, a patterned mesh with the magnetic Fe-Cr2 O3 core-shell skeleton is used as a facile and efficient protective structure for Li metal anodes, enabling Li metal batteries to achieve a Coulombic efficiency of 99.5 % over 300 cycles at a high cathode loading of 5.0 mAh cm-2 . The Li protection strategy based on the MHD interface design might open a new opportunity to develop high-energy-density LMBs.

Author(s): Dai, Mingzhi; Wang, Weiliang; Wang, Pengjun; Iqbal, Muhammad Zahir; Annabi, Nasim; Amin, Nasir | Abstract: An amendment to this paper has been published and can be accessed via a link at the top of the paper.

The feature information of the local graph structure and the nodes may be over-smoothing due to the large number of encodings, which causes the node characterization to converge to one or several values. In other words, nodes from different clusters become difficult to distinguish, as two different classes of nodes with closer topological distance are more likely to belong to the same class and vice versa. To alleviate this problem, an over-smoothing algorithm is proposed, and a method of reweighted mechanism is applied to make the trade-off of the information representation of nodes and neighborhoods more reasonable. By improving several propagation models, including Chebyshev polynomial kernel model and Laplace linear 1st Chebyshev kernel model, a new model named RWGCN based on different propagation kernels was proposed logically. The experiments show that satisfactory results are achieved on the semi-supervised classification task of graph type data.

A recent experiment [Jin, E.; Science 2017, 357, 673−676] shows that the conductivity of a two-dimensional (2D) sp2-carbon-hybridized π-conjugated covalent organic framework (sp2-c-COF) can be enhanced by as much as 12 orders of magnitude after iodine oxidation processing. To understand the physical mechanism underlying such a huge increase in the conductivity, we perform multiscale computations and find that the high conductivity of the iodine-oxidized 2D COF can be attributed to both hole transfer and ion transfer within the 2D COF. The computed dominant charge distribution corresponding to the valence band maximum (VBM) suggests that the delocalized π electrons occur mostly at the active reaction sites. The computed low ionization energy at the active reaction sites further supports that the 2D COF tends to lose electrons during iodine oxidation and to yield cationic COF and anionic triiodide I3–. Complementary classical molecular dynamics simulation shows a relatively high anion conductivity of 13.63 ...

Sub-gap density of states (DOS) is one of the key parameters which impact both the electrical characteristics and reliability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors. So the investigation of DOS extraction is important. Here, a simplified and efficient DOS extraction method based on a single capacitance-voltage (C-V) curve is proposed. The method is verified by comparing with the results from the existing DOS extraction methods such as static current-voltage (I-V) measurement. Besides, this method is applied to extract DOS of an a-IGZO thin-film transistor with different electrical properties. This updated method is employed to explain the decrease of device turn-on voltage, which could be attributed to the DOS decrease. In summary, it is a simple method based on a single C-V curve without optical illumination, temperature dependence, accurate I-V model supporting or complicated mathematics fitting.

Background Transparent thin -film transistors (TFTs) have received a great deal of attention for medical sensors, OLED and medical display applications. Moreover, ultrathin nanomaterial layers are favored due to their more compact design architectures. Methods Here, transparent TFTs are proposed and were investigated under different stress conditions such as temperature and biases. Results Key electrical characteristics of the sensors, such as threshold voltage changes, illustrate their linear dependence on temperature with a suitable recovery, suggesting the potential of the devices to serve as medical temperature sensors. The temperature conditions changed in the range of 28°C to 40°C, which is within the standard human temperature testing range. The thickness of the indium-gallium-zinc oxide semiconductor layer was as thin as only 5–6 nm, deposited by mature radio-frequency sputtering which also showed good repeatability. Optimal bending durability caused by mechanical deformation was demonstrated via suitable electrical properties after up to 600 bending cycles, and by testing the flexible device at a different bending radii ranging from 48 mm to 18 mm. Conclusion In summary, this study suggests that the present transparent nano TFTs are promising candidates for medical sensors, OLED and displays which require transparency and stability.

Mingzhi Dai1,2, Yongbin Hu,3 Changhe Huo,1 Thomas J Webster,4 Liqiang Guo31Ningbo Institute of Materials and Technology Engineering, Chinese Academy of Sciences, Beijing 315201, People’s Republic of China; 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China; 4Northeastern University, Boston, MA, USABackground:Artificial intelligence (AI) integrated circuits (IC) have memory devices as the key component. Due to more complex algorithms and architectures required by neuroscience and other medical applications, various memory structures have been widely proposed and investigated by involving nanomaterials, such as memristors.Methods:Due to reliability issues of mass production, the dominant memory devices in many computers are still dynamic random access memory (DRAM). A DRAM has one transistor and one capacitor, and so it contains two devices and requires a more compact design to replace.Results:A one-transistor memory device which is more compact than DRAM is proposed. As far as the authors know, this is the first/novel flexible and transparent one-transistor memory device without any additional process to make a typical transistor and which is based on polyvinyl alcohol. By using indium-titanium-oxide (ITO) as the metal gate, PVA as the dielectric layer and In-Ga-Zn-O (IGZO) as the channel, the memory is implemented mainly based on amorphous oxides and transparent flexible nanomaterials. The charge storage for the memory function was investigated here and is attributed to the mechanism of charge trapping between the ITO/IGZO junctions. It shows typical artificial synaptic transmission behaviors such as EPSC (excitatory postsynaptic currents).Conclusion:Such a first flexible and transparent one-transistor memory device based on PVA has one capacitor less than DRAM and could be a potential and promising candidate as an alternative for DRAM, especially in the highly complex AI chips needed for numerous medical applications. The flexible memory nanodevice based on flexible dielectrics such as PVA, which showstypical memory and artificial synaptic behaviors, could also be suitable for portable, flexible, transparent or skin-like medical applications.Keywords: flexible, transparent, one-transistor memory, micro-nano electronics, artificial intelligence

Background A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the threshold voltage increased at higher temperatures, which is different from previously reported results and was repeated on different samples. Methods Electrical experiments (such as I-V measurements and photoelectron spectrometer experiments) were performed in order to explain such behavior. Double sweeping gate voltage measurements were performed to investigate the mechanism for the temperature dependent behavior. Results It was found that there was a change of trap charge under thermal stress, which was released after the stress. Conclusion Non-Arrhenius behaviors (including a linear behavior) were obtained for the amorphous nano oxide thin-film transistors within 303~425 K, suggesting their potential to be adjusted by measurement processes and be applied as temperature sensors for numerous medical applications.

A recent experiment [ Jin , E. ; Science 2017 , 357 , 673 - 676 ] shows that the conductivity of a two-dimensional (2D) sp

The modeling of the transient subgap density of states (DOS) for the investigation of trap densities in the oxide-based thin-film transistors is proposed. The study is based on both transient measurements and physical modeling. In history, the subgap DOS modeling of trap densities have been studied according to the static-state current–voltage characteristics or the capacitance–voltage curves. However, the subgap DOS modeling for the transient curves is seldom proposed. In this study, the transient model of subgap DOS is discussed for amorphous In–Ga–Zn–O (a-IGZO) thin films. This model suggests the subgap DOS exhibits a transient behavior with an exponential distribution on the band edge and a Gaussian distribution in the deep gap level. This study could be helpful to understand and optimize the transient electrical properties of a-IGZO TFTs.

Recently, advanced designs and materials emerge to study biologically inspired neuromorphic circuit, such as oxide semiconductor devices. The existence of mobile ions in the oxide semiconductors could be somewhat regarded to be similar with the case of the ions movements among the neurons and synapses in the brain. Most of the previous studies focus on the spike time, pulse number and material species: however, a quantitative modeling is still needed to study the voltage dependence of the relaxation process of synaptic devices. Here, the gate pulse stimulated currents of oxide semiconductor devices have been employed to mimic and investigate artificial synapses functions. The modeling for relaxation process of important synaptic behaviors, excitatory post-synaptic current (EPSC), has been updated as a stretched-exponential function with voltage factors in a more quantitative way. This quantitative modeling investigation of representative synaptic transmission bias impacts would help to better simulate, realize and thus control neuromorphic computing.

Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 10(17)-10(21)/(cm(3)·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017–1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

Two ordered, soft-templated mesoporous carbon powders with cubic and hexagonal framework structure and four different commercial, low cost methacrylate-based polymer binders with widely varying physical properties are investigated as screen printed electrodes for glucose sensors using glucose oxidase and ferricyanide as the mediator. Both the chemistry and concentration of the binder in the electrode formulation can significantly impact the performance. Poly(hydroxybutyl methacrylate) as the binder provides hydrophilicity to enable transport of species in the aqueous phase to the carbon surface, but yet is sufficiently hydrophobic to provide mechanical robustness to the sensor. The current from the mesoporous carbon electrodes can be more than an order of magnitude greater than for a commercial printed carbon electrode (Zensor) with improved sensitivity for model glucose solutions. Even when applying these sensors to rabbit whole blood, the performance of these glucose sensors compares favorably to a standard commercial glucose meter with the lower detection limit of the mesoporous electrode being approximately 20 mg dL−1 despite the lack of a separation membrane to prevent non-specific events; these results suggest that the small pore sizes and high surface areas associated with ordered mesoporous carbons may effectively decrease some non-specific inferences for electrochemical sensing.

Soft templated mesoporous carbon films (ca. 60 nm thick) are fabricated by the cooperative assembly of poly(styrene-block-ethylene oxide) (PS-b-PEO) with phenolic resin, where the pore sizes are tuned by the addition of polystyrene oligomers (hPS) to this self-assembling system. Significant differences in the morphology and pore expansion are found for the thin films in comparison to previously reported bulk powders using a similar system. The film porosity is nearly independent of swelling agent content for addition of up to 10 wt % hPS; this limited effect is attributed to surface segregation of the hPS on the basis of wetting considerations, which decreases the effective concentration of hPS in the hydrophobic domains. The templated synthesis yields a relatively narrow pore size distribution for 10 wt % hPS. Elliptical pores are formed due to the uniaxial contraction that occurs during carbonization...

Surfactant templated mesoporous carbons were evaluated as biofuel adsorbents through characterization of equilibrium and kinetic behavior for both ethanol and n-butanol. Variations in synthetic conditions enabled facile tuning of specific surface area (500–1300 m2/g) and pore morphology (hexagonally packed cylindrical or BCC spherical pores). n-Butanol was more effectively adsorbed than ethanol for all mesoporous carbons, suggesting a mechanism of hydrophobic adsorption. The adsorbed alcohol capacity increased with elevated specific surface area of the adsorbents, irrespective of pore morphology. While adsorption capacity of these mesoporous carbons is comparable to commercially-available, hydrophobic polymer adsorbents of similar surface area, the pore morphology and structure of mesoporous carbons greatly influenced adsorption rates, enhancing them by up to 1–2 orders of magnitude over commercial polymer adsorbents. Multiple cycles of adsorbent regeneration did not impact the adsorption equilibrium or kinetics. The high chemical and thermal stability of mesoporous carbons provide potential significant advantages over other commonly examined biofuel adsorbents, such as polymers and zeolites.