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1. Growth and characterizations of GaN on SiC substrates with buffer layers.

Author

Lin, C.F., Cheng, H.C., Chi, G. C., Feng, M. S., Guo, J. D., Minghuang Hong, J., and Chen, C. Y.

Subjects
GALLIUM nitride, SILICON carbide
Abstract

Studies the growth and characterizations of galliumnitride on silicon carbide substrates with buffer layers. Enhanced electron mobility; Hall measurement and sheet carrier density; Bulk carrier density and lattice constants.

Published
1997
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