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To investigate the effects of agar oligosaccharides (AO) on lipid metabolism, changes in obesity phenotypes and related molecular factors were evaluated in C57BL/6N mice fed a high-fat diet (HFD). When HFD-induced obese mice were fed AO, they lost weight. Also, fat accumulation in abdominal and liver tissues was lower in the AO groups than in the Vehicle group. Lipid droplet sizes in tissue sections were reduced by AO, and these observations were mirrored by serum lipid contents. To evaluate the effects of AO on lipid metabolism, lipogenesis and lipolysis-related factors were analyzed. The mRNA expressions of genes involved in lipogenesis, such as adipocyte-protein 2 (aP2) and fatty acid synthase (FAS), were reduced by AO administration, and the expressions of lipolysis-associated proteins, including perilipin, hormone-sensitive lipase (HSL), and fat triglyceride lipase (ATGL), were increased. Taken together, our results suggest that AO should be considered a valuable natural agent that inhibits obesity.

Background and aim The histologic discrepancies between preoperative endoscopic forceps biopsy (EFB) and endoscopic submucosal dissection (ESD) specimens sometimes confuse the endoscope operator. This study aimed to analyze the limitation of the biopsy-based diagnosis before ESD and to evaluate which factors affect the discordant pathologic results between EFB and ESD. Methods A total of 1427 patients, who were diagnosed with gastric adenoma by EFB, were enrolled. Cancer confirmed on EFB was excluded (n = 513). We retrospectively reviewed cases and compared histologic diagnoses in the biopsy sample with the final diagnosis in the endoscopically resected specimen. Results The diagnosis was upgraded (from low-grade dysplasia to high-grade dysplasia or adenocarcinoma, or from high-grade dysplasia to adenocarcinoma) in 328 cases (23.0%), concordant in 944 (66.1%), and downgraded (from high-grade dysplasia to low-grade dysplasia or non-neoplasia, or from low-grade dysplasia to non-neoplasia) in 155 (10.9%). Multivariate logistic regression analysis showed that surface ulceration and depressed lesions were associated with significant risk factors for upgrading. Age younger than 60 years and size Conclusions Careful endoscopic observation should consider size, ulceration, and depression to ensure accurate diagnosis when a gastric neoplasm is suspected.

The MoS2/GO hybrid composite thin film is prepared by a facile solution mixing process. To reduce the composite film spin-coated on a SiO2 (300 nm)/Si substrate, thermal annealing at 600 °C for 1 h in a N2 atmosphere is used. The thermally reduced GO (rGO) composite film is subjected to line patterning through a soft lithographic patterning method, and the patterned MoS2/rGO composite thin film is re-transferred onto a PET film from the Si substrate. The patterned MoS2/rGO composite thin film has a thickness of about 10 nm and the transmittance of the patterned MoS2/rGO composite thin film on the PET substrate is 93%. The NO2 gas sensor device is fabricated and its basic characteristics are systematically investigated. The patterned MoS2/rGO composite thin film gas sensor has a sensitivity at least four times higher than the pure rGO thin film gas sensor. In addition, the characteristics of the sensor device are also maintained at a bending radius of 14 mm. This transparent and flexible patterned MoS2/rGO composite thin film can be used as a highly sensitive gas sensor that will detect a concentration as low as 0.15 ppm of harmful gases such as NO2.

Integrated graphene films (IGFs) with self-assembled single-layer graphene as a channel and multi-layer graphene as an electrode material were synthesized simultaneously using a one-step process by thermal chemical vapor deposition. The prominent difference in graphene growth rate between Ni and Cu catalytic substrates made enable to synthesize the IGFs with self-assembled single-layer and multi-layer graphene on a Cu foil with pre-patterned Ni films. The thickness of multi-layer graphene for IGFs was precisely controlled by optimizing conditions including the injection temperature of carbon feedstock and the surface concentration of Ni atoms affected by the inter-diffusion related to the growth temperature and time. The thickness and crystallinity of synthesized IGFs were evaluated by resonant Raman spectroscopy. We fabricated the IGFs-based field effect transistors (FETs) to examine electrical transport properties of the films. These results suggest that the synthesis technique for IGFs could lead to mass fabrication of wearable graphene-based FETs in the near future.

Impedance spectroscopy was applied to 2-dimensional graphene materials that were thermally grown on copper substrates to quantitatively monitor the quality of the as-grown graphene materials without the subsequent transfer process. The presence of the graphene layer prevents the dissolution of the metallic copper elements in the corrosive electrolyte and provides an interface between the ionic electrolyte and electronic graphene/copper materials. The highest impedance appears at the graphene/electrolyte to be associated with electrochemically robust graphene materials, i.e., the as-grown graphene materials subjected to atomic layer deposition of Al 2 O 3 . Such an effect is attributed to the anti-corrosive protection of graphene materials and the defect-curing function of Al 2 O 3 in graphene materials. The impedance-based information can be exploited in-situ without the use of any destructive approaches to evaluate the electrical perfectness vulnerable to preparation environments.

Two key issues in graphene-based p-n junction applications are the manipulation of the type and density of carrier in graphene and the development of a facile fabrication process. Here we reported the formation of graphene films with tunable carrier type by doping of ethoxylated polyethylenimine (PEIE) and Au nanoparticles (NPs). The carrier density of doped graphene can be tuned by altering the concentration of the dopant solutions. The doping effects of PEIE and Au NPs on graphene were monitored by resonant Raman spectroscopy and electrical transport measurements. Graphene p-n junction arrays were assembled by simple soft-lithographic patterning and cross-stacking of n-and p-type doped graphene films, showing a graphene p-n junction behavior with two VCNDP.

In order to assess the most suitable way for application of graphene-based flexible transparent electrodes, the effects of Au doping and subsequent annealing on graphene films produced by chemical exfoliation and chemical vapor deposition (CVD) were explored. After Au doping and subsequent annealing, uniformly-sized Au nanoparticles (NPs) were distributed on CVD-graphene films and reduced graphene oxide (rGO) films and the density of the Au NPs on rGO films was greater than that on CVD-graphene films. Interestingly, CVD-graphene films have sheet resistance behavior opposite to that of rGO films after Au doping and subsequent annealing. This can be understood by combined features including an increase in carrier concentration via p-type doping and an increase in contact resistance via the intercalation of non-conducting AuCl3 nanoparticles, as suggested by the work function measurement of CVD-graphene and rGO films before and after Au doping. This finding will shed light on an effective way to obtain large-scale and work function-tuned graphene films for applications in graphene-based flexible transparent electrodes.

Graphene nanopatches (GNs) on graphene films grown by chemical vapor deposition (CVD) were synthesized by Ni nanoparticle assembly and subsequent CVD growth to enhance their electrical conductivity. As a result, the sheet resistance of the hexagonally shaped GN-assembled graphene films decreased from 681.7 ± 11.2 to 527.2 ± 47.0 Ω sq−1 with 97.9% transparency. This improvement in electrical conductivity was the result of p-type doping of the GNs on graphene films and the generation of additional charge carrier conducting paths to diminish defect scattering, which was a result of the enhanced extracted-hole mobility of the GN-assembled graphene films.

We present a CMOS image sensor (CIS) with phase detection auto-focus (PDAF) in all pixels. The size of photodiode (PD) is 0.64μm by 1.28μm, the smallest ever reported and two PDs compose a single pixel. Inter PD isolation was fabricated by deep trench isolation (DTI) process in order to obtain an accurate AF performance. The layout and depth of DTI was optimized in order to eliminate side effects and maximize the performance even at extremely low light condition up to 1lux. In particular the AF performance remains comparable to that of 0.70μm dual PD CIS. By using our unique technology, it seems plausible to scale further down the size of pixels in dual PD CIS without sacrificing AF performance.

Here we provide evidence of two selective growth modes, namely the ‘surface adsorption (SA) mode’ and the ‘diffusion and precipitation (DP) mode’ for the synthesis of graphene on Cu foil by thermal chemical vapor deposition. Using acetylene feedstock, the number of graphene layers was controlled simply by adjusting the injection time, and the DP growth mode was clearly verified by the existence of a carbon-diffused Cu layer with expansion of the Cu lattice. With methane feedstock, either SA or DP growth modes could be selected for the growth of graphene at low or high partial pressure of carbon feedstocks, respectively. The critical pressure for switching the growth modes depends on reactivity of carbon feedstock to Cu substrate.

A graphene transistor was simply fabricated by employing ZnO deposition into metallic graphene, for which a source-drain electrode and a semiconductor channel could be formed concurrently. The electric properties of graphene could be adjusted by using ZnO thin film because oxygen was injected into the surface of metallic graphene. The surface oxidation of metallic graphene results in enhanced p-type semiconductor characteristics, especially in an improved on/off current ratio. The degree of the self-imposed semiconducting property is proportional to the degree of oxidation occurring on the graphene surface.

In this study, electrical-conductivity-controlled boron-carbonitride (BCN) films were synthesized directly on SiO2 substrates by using thermal chemical vapor deposition (TCVD) with solid mixtures containing polystyrene (PS) and ammonia borane. The BCN films had atomically smooth surfaces. The carbon content of the BCN films was simply controlled by modulating the weight of PS in the precursor mixture, which allowed the electrical conductivity of the BCN film to be controlled. In addition, we found that selection of an appropriate growth temperature determined the resulting semiconducting or metallic behavior of the BCN film.

The control in electrical properties of graphene is essentially required in order to realize graphenebased nanoelectronics. In this study, N-doped graphene was successfully obtained via nitrogen plasma treatment. Graphene was synthesized on copper foil using thermal chemical vapor deposition. After N2 plasma treatment, the G-band of the graphene was blueshifted and the intensity ratio of 2D- to G-bands decreased with increasing the plasma power. Pyrrolic-N bonding configuration induced by N2 plasma treatment was studied by X-ray photoelectron spectroscopy. Remarkably, electrical characterization including Hall measurement and I-V characteristics of the N-doped graphene exhibit semiconducting behavior as well as the n-type doping effect.

Structural inhomogeneities, such as the wrinkles and ripples within a graphene film after transferring the free-standing graphene layer to a functional substrate, degrade the physical and electrical properties of the corresponding electronic devices. Here, we introduced titanium as a superior adhesion layer for fabricating wrinkle-free graphene films that is highly applicable to flexible and transparent electronic devices. The Ti layer does not influence the electronic performance of the functional substrates. Experimental and theoretical investigations confirm that the strong chemical interactions between Ti and any oxygen atoms unintentionally introduced on/within the graphene are responsible for forming the clean, defect-free graphene layer. Our results accelerate the practical application of graphene-related electronic devices with enhanced functionality. The large-area monolayer graphenes were prepared by a simple attachment of the Ti layer with the multi-layer wrinkle-free graphene films. For the first time, the graphene films were addressed for applications of superior bottom electrode for flexible capacitors instead of the novel metals.

24 patients underwent bilateral hip replacement, using the SROM modular system (Depuy Johnson & Johnson, MA, USA) with the porous-coated sleeve in one hip and an HA-coated sleeve in the other. 20 patients were followed for at least 4 years with clinical and radiographic evaluations. We found no difference between the two sides as regards the time of disappearance of thigh pain and hip scores. Radiographs showed a buttress sign in 18 HA-coated and 15 porous coated stems. There were no differences in the serial bone-remodeling pattern around the proximal sleeve and measurement of wear volume between the two groups. In the short- to medium-term, our findings support the view that the hydroxyapatite-coated femoral stem has no advantages over those with porous coating.

Homogeneously distributed zinc nanoparticles (NPs) on the glass substrate were investigated for the transmittance, mechanical durability, and antibacterial effect. The buffered Ti NPs between Zn NPs and glass substrate were studied for an enhancement of the transmittance and mechanical endurance. The Ti NPs buffered Zn NPs showed a high transmittance of approximately 91.5% (at a wavelength of 550 nm) and a strong antibacterial activity for Staphylococcus aureus and Escherichia coli bacteria. The buffered Ti NPs are attractive for an excellent mechanical endurance of the Zn NPs. The Zn NPs did not require the protection layer to prevent the degradation of the performance for both the antibacterial effect and the transmittance.

We have fabricated graphene-based chemical sensors with flexible heaters for the highly sensitive detection of specific gases. We believe that increasing the temperature of the graphene surface significantly enhanced the electrical signal change of the graphene-based channel, and reduced the recovery time needed to obtain a normal state of equilibrium. In addition, a simple and efficient soft lithographic patterning process was developed via surface energy modification for advanced, graphene-based flexible devices, such as gas sensors. As a proof of concept, we demonstrated the high sensitivity of NO2 gas sensors based on graphene nanosheets. These devices were fabricated using a simple soft-lithographic patterning method, where flexible graphene heaters adjacent to the channel of sensing graphene were utilized to control graphene temperature.

There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a biocompatible silk fibroin substrate. Significantly, this soft lithographic patterning technique enables us to demonstrate a simple and efficient chemical sensor based on reduced graphene oxide (rGO), a metallic nanoparticle composite, and an attachable graphene-based device on a silk fibroin thin film.

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 +/- 16.9 cm(2)/V center dot s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

The gapless semimetallic nature of graphene-based nanoelectronics is a major hurdle for the advancement of graphene-based field-effect transistors. Here graphene-carbon nanotubes hybrid nanostructures (Gr-CNTs HNSs) were formed by synthesizing single-walled carbon nanotubes (SWCNTs) with a bandgap on monolayer graphene by thermal chemical vapor deposition. We systematically established optimum conditions for the synthesis of Gr-CNTs HNSs by adjusting catalytic layer formation. The structural features of Gr-CNTs HNSs were investigated by scanning electron icroscopy and Raman spectroscopy. The surface morphologies and chemical states of the catlytic films used to optimize Gr-CNTs HNSs synthesis were explored by atomic force microscopy and X-ray photoelectron spectroscopy. In this process, graphene played a role as a barrier to prevent Fe nanoparticles from interdiffusing into Al2O3 layer. Based on these studies, we determined the catalytic structure (Fe/Graphene/Al2O3/SiO2) optimal for growing high-density SWCNTs on monolayer graphene. Electrical transport measurements revealed that Gr-CNTs HNSs exhibited p-type semiconducting behavior with combined properties of graphene and CNTs.

The change in the atomic nitrogen concentration on a semiconducting nanowire's surface and the consequent changes in the electrical characteristics of a nanowire transistor were investigated by exposing In2O3 nanowires to nitrogen. (N-2) plasma. After plasma was applied at N-2 flow rates of 20, 40, and 70 sccm with a fixed source power of 50 W, the In2O3 nanowire transistor exhibited changes in the threshold voltage (V-th), subthreshold slope (SS), and on-current (I-on). In particular, after treatment at an N-2 flow rate of 40 sccm, Vth shifted positively by similar to 2.3 V, the SS improved by similar to 0.4 V/dec, and Ion increased by similar to 0.8 mu A on average. The changes are attributed to the combination of nitrogen ions produced by the plasma with oxygen vacancies or indium interstitials on the nanowires. Optimization of the plasma treatment conditions is expected to yield desirable device characteristics by a simple, nondestructive process.

Increased stress within a certain limit enhances ligament healing and improves joint function. In this prospective randomized clinical trial, we compared the clinical results of early motion versus conventional immobilization after arthroscopic Bankart repair in a selected patient population.Prospective randomized clinical trial.We performed an arthroscopic Bankart repair using suture anchors in 62 patients with traumatic recurrent anterior instability of the shoulder. Patients were randomized into 2 groups; group 1 (28 patients; mean age, 28 years) was managed with 3 weeks of immobilization using an abduction sling and conventional rehabilitation program, and group 2 (34 patients; mean age, 29 years) was managed with an accelerated rehabilitation program that consisted of staged range of motion and strengthening exercises from the immediate postoperative day. Selection criteria were nonathletes with recurrent anterior shoulder dislocation and a classic Bankart lesion with a robust labrum limited to 1 cm from the midglenoid notch. The patients were followed up for a mean of 31 months (range, 27 to 45 months; standard deviation, 9 months). Analysis of outcome included pain scores at 6 weeks and at final follow-up evaluation, range of motion, return to activity, recurrence rate, patient satisfaction with each rehabilitation program, and shoulder scores assessed by the American Shoulder and Elbow Surgeons Shoulder Index, the rating system of the University of California at Los Angeles, and another scoring system.The recurrence rate was not different between the 2 groups (P =.842). None of the groups developed recurrent dislocation. Two patients from each group were positive for anterior apprehension signs. Patients who underwent accelerated rehabilitation resumed functional range of motion faster (P.001) and returned earlier to the functional level of activity (P.001). Accelerated rehabilitation decreased postoperative pain (P =.013), and more patients were satisfied with this program (P.001). Shoulder scores, return to activity, pain score, and range of motion were not different between the 2 groups at the final follow-up evaluation (P.05).Early mobilization of the operated shoulder after arthroscopic Bankart repair does not increase the recurrence rate in a selected group of patients. Although the final outcomes are approximately the same for both groups, the accelerated rehabilitation program promotes functional recovery and reduces postoperative pain, which allows patients an early return to desired activities.

We demonstrate homogeneous and air-stable n-type doping of graphene grown by thermal chemical vapor deposition. Laminated Polyethyleneimine (PEI) layers fabricated by a simple polymer solution coating were employed. The doping stability of multiple laminated structures (graphene/PEI, PEI/graphene, and graphene/PEI/graphene) was systematically investigated. The resulting graphene/PEI/graphene laminated structure was highly stable in air. Moreover, the work function and carrier concentration of doped graphene can be tuned by altering the laminated structure.

We propose a facile methodology for large-scale fabrication of graphene-based field effect transistors (GFETs) with two types of devices, top- and bottom-gated configurations. The top-gated GFETs containing a monolayer graphene channel, a free-standing Al2O3 nanosheet as the gate dielectrics and a top-gate electrode were assembled by a poly(methyl methacrylate)-assisted wet-transfer technique. As a result, the hole mobility of the top-gated GFETs was 2306.28 ± 295.53 cm2 V−1 s−1, which is much higher than that of top-gated GFETs with Al2O3 dielectrics prepared by atomic layer deposition (15.28 cm2 V−1 s−1). We also simultaneously synthesized graphene–graphite integrated electronic devices, in which we utilized graphene and graphite layers as an active channel layer and source/drain electrodes for bottom-gated all-graphene-based FETs, respectively. In addition, a layer-by-layer stacked multilayer graphene sheet and free-standing Al2O3 dielectrics were employed as a gate electrode and a dielectric layer, respectively. Significantly, all component layers were assembled by a poly(methyl methacrylate)-assisted wet-transfer technique, which is a progression towards high-performance, transparent, and flexible GFETs.

Here, we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films. The density of the Ni NPs increased gradually, whereas the size of the Ni NPs decreased with increasing NiCl2·6H2O solution concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent nano-particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements. This method may provide a facile and universal way to obtain metal NPs on graphene if the metal forms a compound with Cl.

In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.

Unlike conventional dry stamp-based printing methodologies, the suggested wet PDMS stamping technique allows for the generation of well-patterned graphene source/drain electrode structures. It is clarified that the electrical characteristics of soluble In–Ga–Zn–O (IGZO) TFTs can be improved effectively by adjusting the work function of transfer-printed graphene electrodes with a simple, facile Au doping technique. By implementing the transfer-printed, Au-doped graphene layers as a source/drain electrode and the newly developed chemical structure-tailored IGZO semiconductors as a soluble channel layer, the high performance graphene/IGZO TFTs are demonstrated with a field-effect mobility of 3.2 cm2 V−1 s−1, which is far superior to the previously reported TFTs employing the printable electrode and a soluble oxide semiconductor.

A simple and efficient soft lithographic process for an easily applicable patterning method for large-scale graphene sheets was demonstrated. The surface of an elastomeric stamp was functionalized with polar molecules to enhance the interfacial adhesive force between the stamp and the graphene layer. A specific graphene area was then patterned on the initial substrate and transferred to the target surface by contacting with the stamp.

Size-tailored Fe catalytic nanoparticles (NPs) were formed by a heat-driven evaporation process, and precise control of single-walled carbon nanotube (SWCNT) diameter was achieved. The size and surface concentration of Fe NPs significantly decreased with increasing evaporation temperature, which was investigated by transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy. TEM and Raman spectroscopy revealed that the synthesis of SWCNTs with an extremely narrow diameter distribution was achieved and their diameter can be manipulated by evaporation temperature. This diameter-controlled growth of SWCNTs is a step towards SWCNT-based applications.

Background/Aims Liver biopsy is a standard method for diagnosis of liver cirrhosis in patients with chronic hepatitis. Because liver biopsy is an invasive method, non-invasive methods have been used for diagnosis of compensated liver cirrhosis in patients with chronic hepatitis. The current study was designed to evaluate the usefulness of ultrasonography and routine blood tests for diagnosis of compensated liver cirrhosis in patients with chronic viral hepatitis. Methods Two hundred three patients with chronic viral hepatitis who underwent liver biopsy were included in this study and ultrasonography and routine blood tests were analyzed retrospectively. Ultrasonographic findings, including surface nodularity, parenchyma echogenecity, and spleen size, were evaluated. The diagnostic accuracy of ultrasonography and routine blood tests were examined. Results Discriminant analysis with forward stepwise selection of variables showed that liver surface nodularity, platelet count, and albumin level were independently associated with compensated liver cirrhosis (p95% specificity: platelet count 1.3; and surface nodularity. If at least one of the four variables exists in a patient with chronic viral hepatitis, we can predict liver cirrhosis with 90% specificity and 61% sensitivity. Conclusions These results suggest that four variables (platelet count 1.3, and surface nodularity) can be used for identification of liver cirrhosis in patients with chronic viral hepatitis with high specificity.

Purpose : We evaluated surgical cases of ulnar neuropathy combined with post-traumatic conditions of the elbow. Materials and Methods : Fourteen patients who received ulnar nerve decompression at the cubital tunnel combined with elbow injury were assessed retrospectively. Ulnar nerve showed McGowan grade I in eight patients, grade II-A in one, grade II-B in four and grade III in one. The decompression procedures included nine anterior transpositions, four epicondylectomy, and one in situ decompression. Pain, sensory and motor status were evaluated after a mean follow up of 17.9 months. Results : Symptoms were completely resolved in ten patients and markedly improved in four. Decreased motor function was improved by at least one grade in all patients. Ulnar neuropathy did not compromise flexion exercise in postoperative rehabilitation. Conclusion : Development of ulnar neuropathy has close relationships with elbow trauma and its symptoms tend to be underestimated because elbow flexion is frequently limited due to post-traumatic contracture. Proper evaluation and decompression of the ulnar nerve should be considered as one of the factors influencing the clinical result in the management of post-traumatic problems of the elbow.