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The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite. For all layers, dark saturation current-densities ranging between 2 and 10 fA/cm2 can be reported. Simultaneously, no metal induced recombination for the two lower sintering temperatures have been observed pointing towards a true passivated contact. Furthermore, contact resistivities below 10 mΩcm2 have been achieved. It seems that the industrial passivating contact matured to a fully passivated and conducting contact enabling full efficiency potential. The fact that this can be realized using either PECVD or LPCVD from various manufacturer is expected to drive costs down and contribute to the increased adoption of the TOPCon technology.

ISFH is following a distinct cell development roadmap, which comprises—as a short‐term concept—the combination of an n‐type doped electron‐collecting poly‐Si on oxide (POLO) junction with an Al‐alloyed p+ junction for hole collection. This combination can be integrated either in front‐ and back‐contacted back junction cells (POLO‐BJ) or in interdigitated back‐contacted cells (POLO‐IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2‐sized 22.9% efficient POLO‐BJ cell with a temperature coefficient TCη of only −(0.3 ± 0.02) %rel/K and a certified 23.7% (4 cm2 d.a.) efficient POLO‐IBC cell. We discuss various specific conceptual aspects of this technology and present a simulation‐based sensitivity analysis for quantities related to the quality of the hole‐collecting alloyed Al‐p+ junction which are subject to continuous improvement and thus hard to predict exactly. We report that the measured pseudo fill factor values decrease more due to metallization than would be expected from recombination in the metallized regions with an ideality factor of one only. The gap to pseudo fill factor values that are theoretically achievable at the respective open‐circuit voltages is 1.1%abs (Ga‐doped wafer) for POLO‐IBC and 1.4%abs (B‐doped wafer) to 2%abs (Ga‐doped wafer) for POLO‐BJ. With an embedded blocking layer for Ag crystallites in the poly‐Si, we present a concept to reduce this gap. [ABSTRACT FROM AUTHOR]

Interdigitated back contact (IBC) silicon solar cells with a passivating n‐type poly‐Si on oxide emitter and an aluminum‐doped p+ base contact on M2‐sized Ga‐doped p‐type Cz wafers are reported. The Al‐doped base contact forms during the firing of the printed contacts and allows for a lean process flow. The device optimization balances recombination at the base contacts against resistive losses and respects constraints set by the need of interconnecting cells in a module and contacting the cells temporally by a measurement chuck. A special sample holder is designed for measuring the Isc–Voc curve of the IBC cell with a busbar‐less metal grid. The pseudo‐efficiency is 24.7%. All fingers of each polarity are connected with wires and an efficiency of 22.3% is measured. The comparison of simulations and measurements reveals that the cell has 23.4% efficiency without the series resistance losses due to the wires. A huge part of the resistive losses in the cell are the transport losses of the majorities in the base dissipating a power that corresponds to 0.76%abs efficiency and the resistive losses at the Al‐doped base contact (0.29%abs). [ABSTRACT FROM AUTHOR]

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak=8.0×1018cm-3 and a junction depth dj=0.4 μm, resulting in a sheet resistivity ρsh=380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches. [ABSTRACT FROM AUTHOR]

We demonstrate the fabrication of a fully screen‐printed p‐type silicon solar cell with local hole‐collecting Al‐alloyed (Al‐p+) contacts with a record open circuit voltage of 716 mV. The solar cell is fabricated by using almost the same process equipment as PERC cells. One of the dominant recombination losses in PERC cells is the recombination in the passivated and in the contacted emitter regions that so far limit the open circuit voltage to values below 700 mV. We eliminate these loss channels by substituting the P‐diffused emitter by a passivating n‐type poly‐Silicon on Oxide (nPOLO) contact. We place this contact on the rear side because of its otherwise strong parasitic absorption. The Al‐p+ contacts are also located at the rear side to avoid front‐side shading. This results in a POLO‐IBC cell structure. The efficiency of the best cell so far is 23.0% with a designated area of 4 cm2 fabricated on a M2‐sized wafer. Scanning electron microscopy reveals an Al‐p+ thickness of less than 3.3 μm and only a few 100 nm at the contact ends, which is less than the 5 μm typically for optimized Al‐p+ contacts. A comparison of measured and simulated current‐voltage curves over a variation of the contact fraction extracts a high saturation current density of the Al‐p+ contact of J0‐Al ‐p+ = 2,250 fA cm−2 for the current screen‐print conditions and Al‐paste causing an absolute efficiency loss of 0.5%abs. The recombination at the AlOx/SiNy surface and the shunt resistance limits the cell by 0.6%abs each. [ABSTRACT FROM AUTHOR]

This article reports the recent progress of p‐type back junction solar cells featuring an aluminum front grid and an n+‐type passivating polysilicon on oxide (POLO) contact at the cell rear side. The best cell has an efficiency of 22.6% and an open‐circuit voltage of 716 mV, independently confirmed by Institute for Solar Energy Research Hamelin (ISFH) CalTeC. The cell area is 244.5 cm2. The increase in the SiNx capping layer thickness at the cell rear side reduces the deterioration of passivation quality of the POLO contact by screen‐printed silver. This increases the open‐circuit voltage by 22 mV compared with cells with a thinner nitride layer thickness. The investigation with scanning electron microscopy shows that the damage of the POLO contacts underneath the screen‐printed metal contacts is avoided by increasing the SiNx capping layer thickness. A contact resistivity of 2 mΩ cm2 is measured using the transfer length method. [ABSTRACT FROM AUTHOR]

The fabrication of a silicon solar cell on 6 in. pseudo‐square p‐type Czochralski grown silicon wafers featuring poly‐Si‐based passivating contacts for electrons at the cell rear side and screen‐printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+‐poly‐Si/Al2O3/SiNx layer system, contacted by screen‐printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open‐circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed. [ABSTRACT FROM AUTHOR]

We present a systematic study on the benefit of the implementation of poly‐Si on oxide (POLO) or related junctions into p‐type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen‐print metallization of p+ poly‐Si—are unsolved so far and reduced the efficiency of the "real" POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction. [ABSTRACT FROM AUTHOR]

We report on the UV radiation hardness of photovoltaic modules with bifacial n-type Passivated Emitter and Rear Totally diffused crystalline Si cells that are embedded in an encapsulation polymer with enhanced UV transparency. Modules with front junction cells featuring an AlO x/p+-type Si passivation interface at the illuminated side are stable for a UV irradiation dose of 598 kWh m−2. In contrast, irradiating modules with back junction cells featuring an a-SiN y/n+-type Si passivation interface at the illuminated side reduces the output power by 15%. The quantum efficiency of the a-SiN y-passivated module degrades in the spectral range between 300 and 1000 nm, which we ascribe to a degradation of the surface passivation. Modeling the experimental data shows that photons with an energy above 3.4 eV contribute to the degradation effect and enhance the front surface recombination current density by a factor of 15. [ABSTRACT FROM AUTHOR]