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A study was conducted of several midwave-infrared lasers, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1- and 4.3-micrometer diodes. The lasers utilize multiple-quantum-well active regions. The results indicate pulsed laser operation up to 255 K with 3.2-micrometer diodes while typical pulsed output powers for these diodes at 200 K are more than 50 mW. Further studies are recommended to determine the optimum brroker-gap superlattice termination.

Strained gallium indium antimonate/indium arsenide strained-layer superlattices grown on gallium antimonide showed a high degree of structural quality. Through the use of transmission electron microscopy and x-ray diffraction, ideal and deffect-free superlattices were observed. The layers were highly planar, regular and coherently strained to the indium arsenide substrates. Crystalline defects were not detected despite a lattice mismatch of around 2%. These observations may hasten the application of gallium indium antimonate/indium arsenide superlattices to infrared detection.

Comparisons of theoretical calculations of the optimized InAs/In(sub x)Ga(sub 1-x)Sb superlattices and bulk Hg(sub x)Cd(sub 1-x)Te are valid. The calculations of the performance of optimized superlattices (SL) and bulk HgCdTe (MCT) infrared detectors do account for radiative lifetimes. Criticism based on the concept of detector thickness is irrelevant as MCT as well as the SL do not possess any intrinsic advantage in this respect.

An investigation of optimized InAs/InGaSb superlattice (SL) and bulk HgCdTe (MCT) reveals that the 300 kelvin background limited operation for a 60 degrees field of view is attained up to 130 kelvin for the 11 micrometer SL. For a 5 micrometer MCT, it can be attained up to 185 kelvin. The investigation involved detailed theoretical calculations of Auger and radiative recombination rates. Photon absorption in narrow gap semiconductors, requiring the use of detector cooling is the basis for modern high performance infrared detector technology. Detector cooling is used to obtain background limited performance.

100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The transmitter is realized through the integration of over 50 discrete functions onto a single monolithic InP chip. The resultant DWDM PICs are capable of simultaneously transmitting and receiving ten wavelengths at 10 Gb/s on a DWDM wavelength grid. Optical system performance results across a representative DWDM long-haul link are presented for a next-generation optical transport system using these large-scale PICs. The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption. [ABSTRACT FROM PUBLISHER]

Develops a set of semiconductor diode lasers based on gallium indium antimonide/indium arsenide and indium arsenide/aluminum antimonide superlattice with mid-wave infrared emission wavelength. Details on the multi-quantum well active regions of each laser structures; Use of the superlattice as a cladding layer; Dependence of the threshold current density on process variation.

Examines the optical quality of GaInSb/InAs superlattice grown by molecular beam epitaxy. Use of cracked antimony source and postgrowth anneal procedure; Observation of band-to-band luminescence at room temperature; Effects of anneals on the optical and electrical properties of superlattices.

Investigates the Auger recombination lifetime in InAs-Ga[sub 1-x]In[sub x]Sb superlattices. Analysis of data on photoconductive response to frequency-doubled CO[sub 2] radiation; Calculation of the superlattice band structure; Observation of Auger lifetimes of two orders of magnitude.