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34 results on '"Milan Sinobad"'

1. Femtosecond pulse amplification on a chip

Author

Mahmoud A. Gaafar, Markus Ludwig, Kai Wang, Thibault Wildi, Thibault Voumard, Milan Sinobad, Jan Lorenzen, Henry Francis, Jose Carreira, Shuangyou Zhang, Toby Bi, Pascal Del’Haye, Michael Geiselmann, Neetesh Singh, Franz X. Kärtner, Sonia M. Garcia-Blanco, and Tobias Herr

Subjects
Science
Abstract

Abstract Femtosecond laser pulses enable the synthesis of light across the electromagnetic spectrum and provide access to ultrafast phenomena in physics, biology, and chemistry. Chip-integration of femtosecond technology could revolutionize applications such as point-of-care diagnostics, bio-medical imaging, portable chemical sensing, or autonomous navigation. However, current chip-integrated pulse sources lack the required peak power, and on-chip amplification of femtosecond pulses has been an unresolved challenge. Here, addressing this challenge, we report >50-fold amplification of 1 GHz-repetition-rate chirped femtosecond pulses in a CMOS-compatible photonic chip to 800 W peak power with 116 fs pulse duration. This power level is 2–3 orders of magnitude higher compared to those in previously demonstrated on-chip pulse sources and can provide the power needed to address key applications. To achieve this, detrimental nonlinear effects are mitigated through all-normal dispersion, large mode-area and rare-earth-doped gain waveguides. These results offer a pathway to chip-integrated femtosecond technology with peak power levels characteristic of table-top sources.

Published
2024
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2. Mid-infrared integrated silicon–germanium ring resonator with high Q-factor

Author

Rémi Armand, Marko Perestjuk, Alberto Della Torre, Milan Sinobad, Arnan Mitchell, Andreas Boes, Jean-Michel Hartmann, Jean-Marc Fedeli, Vincent Reboud, Pierre Brianceau, Alfredo De Rossi, Sylvain Combrié, Christelle Monat, and Christian Grillet

Subjects
Applied optics. Photonics, TA1501-1820
Abstract

We report the realization of a silicon–germanium on silicon ring resonator with high Q-factor at mid-infrared wavelengths. The fabricated ring exhibits a loaded Q-factor of 236 000 at the operating wavelength of 4.18 µm. Considering the combined waveguide propagation losses and bending losses, which are measured to be below 0.2 dB/cm, even higher Q-factors could be achieved on this platform. Furthermore, our dispersion engineering of the waveguides should make these microrings suitable for nonlinear optical applications. These results pave the way for sensing applications and nonlinear optics in the mid-infrared range.

Published
2023
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3. Mid-infrared supercontinuum generation in a low-loss germanium-on-silicon waveguide

Author

Alberto Della Torre, Milan Sinobad, Remi Armand, Barry Luther-Davies, Pan Ma, Stephen Madden, Arnan Mitchell, David J. Moss, Jean-Michel Hartmann, Vincent Reboud, Jean-Marc Fedeli, Christelle Monat, and Christian Grillet

Subjects
Applied optics. Photonics, TA1501-1820
Abstract

We experimentally demonstrate supercontinuum (SC) generation in a germanium-on-silicon waveguide. This waveguide exhibits propagation loss between 1.2 dB/cm and 1.35 dB/cm in the 3.6 µm–4.5 µm spectral region for both transverse electric (TE) and transverse magnetic (TM) polarizations. By pumping the waveguide with ∼200 fs pulses at 4.6 µm wavelength, we generate a mid-infrared (IR) SC spanning nearly an octave from 3.39 µm to 6.02 µm at the −40 dB level. Through numerical analysis of the evolution of the SC, we attribute the current limit to further extension into the mid-IR mainly to free-carrier absorption.

Published
2021
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4. Mid-infrared supercontinuum generation in a varying dispersion waveguide for multi-species gas spectroscopy

Author

Alberto Della Torre, Remi Armand, Milan Sinobad, Kokou Firmin Fiaboe, Barry Luther-Davies, Stephen Madden, Arnan Mitchell, Thach Nguyen, David J. Moss, Jean-Michel Hartmann, Vincent Reboud, Jean-Marc Fedeli, Christelle Monat, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Australian National University (ANU), Swinburne University of Technology [Melbourne], Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), ANR-21-CE24-0005,MIRthFUL,Source supercontinuum reconfigurable moyen infrarouge sur puce et pompée par fibre(2021), and European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015)

Subjects
Nonlinear optics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Electrical and Electronic Engineering, Supercontinuum, Mid-infrared, Spectroscopy, Atomic and Molecular Physics, and Optics
Abstract

International audience; We report the experimental generation of a broadband and flat mid-infrared supercontinuum in a silicongermanium-on-silicon two-stage waveguide. Our particular design combines a short and narrow waveguide section for efficient supercontinuum generation, and an inverse tapered section that promotes the generation of two spectrally shifted dispersive waves along the propagation direction, leading to an overall broader and flatter supercontinuum. The experimentally generated supercontinuum extended from 2.4 to 5.5 µm, only limited by the long wavelength detection limit of our spectrum analyzer. Numerical simulations predict that the supercontinuum actually extends to 7.8 µm. We exploit the enhanced flatness of our supercontinuum for a proof-of-principle demonstration of free-space multi-species gas spectroscopy of water vapor and carbon dioxide.

Published
2023

6. Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Author

Neetesh Singh, Jan Lorenzen, Milan Sinobad, Kai Wang, Andreas Liapis, Henry Frankis, Stefanie Haugg, Henry Francis, Jose Carreira, Michael Geiselmann, Mahmoud Gaafar, Tobias Herr, Jonathan Bradley, Zhipei Sun, Sonia García-Blanco, and Franz Kärtner

Subjects
FOS: Physical sciences, Physics - Optics, Optics (physics.optics)
Abstract

Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 µm, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 µm), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space.

Published
2023
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8. Silicon-Germanium Integrated Ring Resonator with High Q-factor in the Mid-Infrared

Author

Marko Perestjuk, Rémi Armand, Alberto Della Torre, Milan Sinobad, Arnan Mitchell, Andreas Boes, Jean-Michel Hartmann, Jean-Marc Fedeli, Vincent Reboud, Christelle Monat, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), International Associated Laboratory in Photonics between France and Australia (ALPhFA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), and European Project: ECLAUSion

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; We demonstrate a high-Q ring resonators in the mid-infrared in a silicon-germanium chip-based platform. The achieved a loaded Q-factor of 90,000 for the side-coupled ring around 4.18µm operating wavelength.

Published
2022

9. Octave-Spanning Supercontinuum Generation in a Thin Si3N4 Waveguide Coated with Highly Nonlinear TeO2

Author

Hamidu M. Mbonde, Neetesh Singh, Bruno Luís Segat Frare, Milan Sinobad, Pooya Torab Ahmadi, Batoul Hashemi, Dawson. B. Bonneville, Franz X. Kärtner, and Jonathan D. B. Bradley

Abstract

We report on octave-spanning supercontinuum generation in a 400-nm-thick silicon nitride waveguide coated with tellurite glass. An octave-spanning supercontinuum is achieved at a low peak power of 482 W using a 100-fs laser centered at 1565 nm.

Published
2022

10. Mid-Infrared Supercontinuum Generation in Germanium Waveguides

Author

Jean-Michel Hartmann, Milan Sinobad, Arnan Mitchell, Vincent Reboud, Christelle Monat, Pan Ma, Remi Armand, Jean-Marc Fedeli, David J. Moss, Alberto Della Torre, Christian Grillet, Stephen J. Madden, Barry Luther-Davies, INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), MIRSICOMB, ANR-17-CE24-0028, GRAPHICS 648546, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[PHYS]Physics [physics], Materials science, Silicon, business.industry, chemistry.chemical_element, Germanium, 7. Clean energy, Supercontinuum, law.invention, Wavelength, chemistry, law, Broadband, Optoelectronics, Photonics, business, Waveguide, ComputingMilieux_MISCELLANEOUS, Coherence (physics)
Abstract

On-chip mid-infrared (mid-IR, from 3 to 15 μm wavelength) supercontinuum (SC) generation is of great interest for integrated sensing devices, since it enables parallel detection of multiples species [1] . The generation of mid-IR SC in group IV platforms is particularly significant, since it would allow low-cost, large-scale production and electro-optic integration. Mid-IR SC generation has been demonstrated in several group-IV platforms [1] – [4] . Recently, the wide transparency window up to 15 μm and theoretical predictions of attractive nonlinear properties [5] led researchers to explore germanium as a promising material for mid-infrared photonics. However, experimental SC generation in pure germanium waveguides remained elusive so far. Our group reported SC generation up to 8.5 μm in silicon-germanium on silicon waveguides [3] . We have also demonstrated the possibility, with this platform, of precisely controlling the SC coherence properties [6] – [8] . The great potential of germanium-based platforms for on-chip mid-IR SC generation was recently confirmed, with the demonstration of a SC extending from 3 up to 13 μm in a germanium-rich graded index silicon-germanium on silicon waveguide [9] . To achieve such a broad spectrum, however, the waveguide was pumped at 7.5 μm, whereas short wavelength pumps are preferable in fully integrated broadband sources.

Published
2021

11. Mid-infrared Octave-spanning Supercontinuum Generation in an All-normal Dispersion SiGe Waveguide

Author

Christelle Monat, Arnan Mitchell, Barry Luther-Davies, Milan Sinobad, Alberto Della Torre, Jean-Michel Hartmann, Jean-Marc Fedeli, Pan Ma, David J. Moss, Remi Armand, Stephen J. Madden, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Optical amplifier, [PHYS]Physics [physics], Waveguide (electromagnetism), Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Octave (electronics), Polarization (waves), 01 natural sciences, Supercontinuum, 010309 optics, Optics, Pulse compression, 0103 physical sciences, Dispersion (optics), 0210 nano-technology, business, Self-phase modulation
Abstract

International audience; We report supercontinuum generation from an all-normal dispersion SiGe-on-Si waveguide pumped with 205 fs pulses at 4 μm. The supercontinua are spanning over an octave for both orthogonal polarizations of the fundamental mode.

Published
2021

12. Octave-spanning mid-infrared supercontinuum generation in all-normal dispersion silicon germanium waveguide

Author

David J. Moss, Jean-Marc Fedeli, Pan Ma, Christian Grillet, Alberto Della Torre, Stephen J. Madden, Remi Armand, Jean-Michel Hartmann, Arnan Mitchell, Barry Luther-Davies, Christelle Monat, Milan Sinobad, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)

Subjects
Waveguide (electromagnetism), Materials science, Silicon, business.industry, chemistry.chemical_element, Degree of coherence, Octave (electronics), Silicon-germanium, Supercontinuum, chemistry.chemical_compound, chemistry, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract

We report what we believe to be the first octave-spanning supercontinuum generation from all-normal dispersion waveguide on a silicon-based chip in the mid-infrared. Here we use 205 fs pulses at 4 μm coupled to low loss, 5.0 μm x 2.7 μm cross-section, silicon germanium-on-silicon waveguide operating in tha all-normal dispersion regime. Generated supercontinuum spans more than an octave between 2.8 and 5.7 μm. Besides, simulations show a high degree of coherence across the entire -30 dB spectrum. Such supercontinuum provides an ideal light probe for broadband mid-infrared molecular absorption spectroscopy.

Published
2021

13. Hybrid chip-based nonlinear optical devices using graphene

Author

Christelle Monat, Pierre Demongodin, Jérémy Lhuillier, Milan Sinobad, Houssein El Dirani, Crochemore, R., Corrado Sciancalepore, Thomas Wood, Malik Kemiche, Radoslav Mazurczyk, Philippe Regreny, Pedro Rojo Romeo, Bertrand Vilquin, Xavier Letartre, Ségolène Callard, Sébastien Cueff, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), grillet, christian, GRAphene nonlinear PHotonic Integrated CircuitS - GRAPHICS - - H20202015-09-01 - 2020-09-01 - 648546 - VALID, and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Abstract

International audience; The recent development of silicon photonics, namely based on Si and Si derivative materials (e.g. Si3N4), has enabled the integration of a wide range of optical devices onto the same chip. However, due the intrinsic limitations of silicon, some devices cannot be efficiently integrated in silicon monolithic architectures. III-V/ Si wafer bonding and LiNBO3 thin film technologies have already provided a path to increase the functionalities that can be heterogeneously integrated onto silicon chips, now turned hybrid [1]. Two-dimensional materials represent another promising route to complement the properties of silicon and create compact hybrid architectures with novel functionalities. The most mature of these 2D materials, graphene, has attracted lots of attention as it exhibits attractive nonlinear optical properties, such as a large photo-refractive Kerr index, and saturable absorption, which might be interesting for nonlinear photonic chips and all-optical information processing. While its intrinsic properties are relatively high for a monolayer-thick material, the use of integrated optics provides a way to enhance the otherwise low absolute response of this 2D material. Besides, the capability of tuning graphene optical properties provides an additional advantage to realize on-demand and reconfigurable nonlinear photonic devices. I will here discuss some of these developments, including our recent demonstration of hybrid graphene/ Si3N4 waveguides for chip-based saturable absorbers [2]. Our work also shows that hybrid graphene coated waveguides provide a relevant platform to unravel the dynamics of graphene nonlinear optical properties. Finally, some limitations of graphene nonlinear properties lead us to explore, with our Australian collaborators, alternative 2D materials such as graphene oxide [3], which might represents an interesting trade-off in terms of linear absorption and nonlinearity.

Published
2020

14. Low-noise mid-infrared supercontinuum generation in a silicon-based chip

Author

Jean-Michel Hartmann, Milan Sinobad, Arnan Mitchell, Christelle Monat, Barry Luther-Davies, David J. Moss, Alberto Della Torre, Christian Grillet, Stephen J. Madden, Pan Ma, Jean-Marc Fedeli, Remi Armand, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), and Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
Waveguide (electromagnetism), Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Polarization (waves), Chip, 01 natural sciences, Silicon based, Low noise, Supercontinuum, 010309 optics, chemistry, 0103 physical sciences, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report the first mid-infrared octave-spanning supercontinuum in an all-normal dispersion silicon-based chip. We generated coherent supercontinuum from 2.8 to 5.7 µm in a silicon-germanium waveguide pumped at 4 μm with 200 fs pulses.

Published
2020
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15. Experimental Mid-Infrared Supercontinuum Generation in a Germanium on Silicon Waveguide

Author

Pan Ma, Christelle Monat, Milan Sinobad, Barry Luther-Davies, Remi Armand, Jean-Marc Fedeli, Jean-Michel Hartmann, Vincent Reboud, Alberto Della Torre, Christian Grillet, Stephen J. Madden, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), MIRSICOMB, ANR-17-CE24-0028, GRAPHICS 648546, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, Silicon, business.industry, Mid infrared, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Supercontinuum, 010309 optics, chemistry, 0103 physical sciences, Optoelectronics, Waveguide (acoustics), 0210 nano-technology, business
Abstract

International audience; We report the first experimental supercontinuum generation in a germanium waveguide. By pumping a low-loss germanium on silicon waveguide with ≈200fs pulses at 4.6 µm, we generated a supercontinuum extending from 3.53 to 5.83 µm.

Published
2020
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16. Mid-infrared supercontinuum generation in silicon-germanium all-normal dispersion waveguides

Author

Arnan Mitchell, Christelle Monat, Milan Sinobad, Alberto DellaTorre, David J. Moss, Christian Grillet, Stephen J. Madden, Jean-Michel Hartmann, Barry Luther-Davies, Jean-Marc Fedeli, Pan Ma, Remi Armand, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Optical amplifier, Materials science, Silicon, business.industry, chemistry.chemical_element, 02 engineering and technology, Degree of coherence, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Supercontinuum, law.invention, 010309 optics, Wavelength, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Optics, chemistry, Pulse compression, law, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business, Waveguide, Coherence (physics)
Abstract

We demonstrate coherent supercontinuum generation spanning over an octave from a silicon germanium-on-silicon waveguide using ∼ 200 f s pulses at a wavelength of 4 µm. The waveguide is engineered to provide low all-normal dispersion in the TM polarization. We validate the coherence of the generated supercontinuum via simulations, with a high degree of coherence across the entire spectrum. Such a generated supercontinuum could lend itself to pulse compression down to 22 fs.

Published
2020
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17. Mid-Infrared Supercontinuum Generation in Germanium-on-Silicon Waveguides

Author

Christian Grillet, Stephen J. Madden, Jean-Marc Fedeli, Pan Ma, Jean-Michel Hartmann, Remi Armand, Milan Sinobad, David J. Moss, Vincent Reboud, Arnan Mitchell, Christelle Monat, Alberto Della Torre, Barry Luther-Davies, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes (UGA), MIRSICOMB, ANR-17-CE24-0028, GRAPHICS 648546, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
Optical amplifier, [PHYS]Physics [physics], Materials science, Silicon, Scanning electron microscope, business.industry, Mid infrared, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Supercontinuum, 010309 optics, chemistry, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Waveguide
Abstract

We report the first experimental supercontinuum generation (from 3.53 to $5.83 \mu m)$ in a pure germanium waveguide. By optimizing the design, we envision to generate a supercontinuum extending up to almost $10 \mu m$. © 2020 The Author(s)

Published
2020
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18. Coherent Mid-Infrared Supercontinuum Sources in SiliconGermanium Waveguides

Author

Jean-Michel Hartmann, David J. Moss, Christian Grillet, Stephen J. Madden, Arnan Mitchell, Alberto Della Torre, Jean-Marc Fedeli, Milan Sinobad, Barry Luther-Davis, Pan Ma, Khu Vu, Sukanta Debbarma, Remi Armand, Christelle Monat, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Australian National University - Department of engineering (ANU), Australian National University (ANU), Swinburne University of Technology [Melbourne], Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Optical amplifier, Materials science, Silicon, business.industry, Chalcogenide, chemistry.chemical_element, Germanium, 02 engineering and technology, Degree of coherence, 021001 nanoscience & nanotechnology, 01 natural sciences, Silicon-germanium, Supercontinuum, 010309 optics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry.chemical_compound, chemistry, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Coherence (physics)
Abstract

International audience; We report coherent mid-infrared supercontinuum generation in silicon-germanium waveguides. We show that the degree of coherence can be controlled by either employing an air clad configuration or a hybrid chalcogenide/silicon-germanium system.

Published
2020

19. Coherent mid-infrared supercontinuum generation for pulse compression in a silicon-based chip

Author

David J. Moss, Arnan Mitchell, Jean-Michel Hartmann, Barry Luther-Davies, Milan Sinobad, Alberto Della Torre, Pan Ma, Jean-Marc Fedeli, Remi Armand, Christelle Monat, Stephen J. Madden, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Mid infrared, 02 engineering and technology, Chip, 01 natural sciences, Silicon based, Supercontinuum, 010309 optics, 020210 optoelectronics & photonics, Pulse compression, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report coherent supercontinuum generation spanning from 2.8 to 5.7 µm in an all-normal dispersion SiGe-on-Si waveguide pumped with 205 fs pulses at 4 μm. We demonstrate by simulations pulse compression to around 22 fs.

Published
2020

20. Mid-infrared supercontinuum generation in hybrid chalcogenide/silicon-germanium waveguides

Author

Christian Grillet, Stephen J. Madden, Arnan Mitchell, Christelle Monat, Sukanta Debbarma, Barry Luther-Davies, David J. Moss, Khu Vu, Alberto Della Torre, Jean-Marc Fedeli, Milan Sinobad, Pan Ma, Remi Armand, Jean-Michel Hartmann, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Australian National University (ANU), Swinburne University of Technology [Melbourne], Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), LIA AlPhFa, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[PHYS]Physics [physics], Materials science, Silicon, Chalcogenide, business.industry, nonlinear optics, Mid infrared, Nonlinear optics, chemistry.chemical_element, mid-infrared, Supercontinuum generation, Cladding (fiber optics), dispersion trimming, law.invention, Silicon-germanium, Supercontinuum, chemistry.chemical_compound, chemistry, integrated optics, law, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Waveguide
Abstract

International audience; We report mid-infrared supercontinuum generation in a silicon germanium-on-silicon waveguide. We show that, by adding a chalcogenide cladding, it is possible to trim a posteriori the waveguide's dispersion profile which, in turn, governs the properties of the generated supercontinuum. In particular, we experimentally show that a shift from anomalous to normal dispersion takes place when a 1.26 µm thick cladding layer of Ge11.5As24Se64.5 is added. Finally, we show that the group velocity dispersion of the waveguide can be precisely controlled by changing the thickness of the cladding layer.

Published
2019

21. Post Processing Dispersion Trimming for On-Chip Mid-Infrared Supercontinuum Generation

Author

Jean-Michel Hartmann, Milan Sinobad, David J. Moss, Khu Vu, Alberto Della Torre, Christian Grillet, Stephen J. Madden, Arnan Mitchell, Christelle Monat, Pan Ma, Jean-Marc Fedeli, Sukanta Debbarma, Barry Luther-Davis, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Nanophotonique (INL - Photonique), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Australian National University (ANU), Swinburne University of Technology [Melbourne], Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)

Subjects
[PHYS]Physics [physics], Fabrication, Materials science, Silicon, Chalcogenide, business.industry, chemistry.chemical_element, Germanium, Supercontinuum, law.invention, chemistry.chemical_compound, chemistry, law, Optoelectronics, Trimming, business, Waveguide, ComputingMilieux_MISCELLANEOUS, Coherence (physics)
Abstract

On-chip mid-infrared (3–20 μm) supercontinuum (SC) generation has potential applications in many different fields such as bio imaging, environmental sensors and security [1]. Recently, the wide transparency window from 3 to 15 μm and CMOS compatibility of germanium, along with the prediction of great nonlinear properties [2–3], have attracted a growing interest toward germanium-based platforms. In particular, silicon-germanium on silicon waveguides have been studied [4–9] and octave spanning SC generation up to 8.5 μm has been demonstrated in this platform [10]. The spectral properties and the coherence of the generated SC strongly depend on the waveguide's dispersion profile and a careful design of the group velocity dispersion is required. However, the actual dispersion of the waveguide produced by fabrication is often different from the target one, as it is sensitive to fabrication inaccuracies, surface contamination and the presence of defects. Post-process tuning mechanisms are therefore of great interest to adjust or correct a posteriori the waveguide dispersion to match the target value. Here, we experimentally show that it is possible to fine tune the dispersion profile a posteriori by adding a chalcogenide cladding layer on top of a highly nonlinear silicon-germanium on silicon waveguide, introducing a simple post processing tool to control the supercontinuum dynamics and its properties.

Published
2019

22. Tailoring the Dispersion of a Hybrid Chalcogenide/Silicon-Germanium Waveguide for Mid- Infrared Supercontinuum Generation

Author

Alberto Della Torre, Milan Sinobad, Barry Luther-Davis, Pan Ma, Stephen Madden, Sukanta Debbarma, Khu Vu, David J. Moss, Arnan Mitchell, Jean-Michel Hartmann, Jean-Marc Fedeli, Christelle Monat, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Nanophotonique (INL - Photonique), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Australian National University - Department of engineering (ANU), Australian National University (ANU), Karlsruhe Institute of Technology (KIT), Royal Melbourne Institute of Technology University (RMIT University), Laboratoire Interuniversitaire des Systèmes Atmosphériques (LISA (UMR_7583)), Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
010309 optics, [PHYS]Physics [physics], Nonlinear optics, 0103 physical sciences, Integrated optics, 02 engineering and technology, Infrared and far-infrared lasers, Supercontinuum generation, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences, 7. Clean energy
Abstract

International audience; We report mid-infrared supercontinuum generation in a silicon germanium-on-silicon waveguide. We show that the dispersion properties of the waveguide can be precisely tuned by controlling the thickness of a chalcogenide cladding layer.

Published
2019

23. Dispersion trimming for mid-infrared supercontinuum generation in a hybrid chalcogenide/silicon-germanium waveguide

Author

Arnan Mitchell, Christelle Monat, Sukanta Debbarma, Jean-Michel Hartmann, Christian Grillet, Stephen J. Madden, Barry Luther-Davis, Alberto Della Torre, Khu Vu, David J. Moss, Jean-Marc Fedeli, Pan Ma, Milan Sinobad, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Royal Melbourne Institute of Technology University (RMIT University), Australian National University - Department of engineering (ANU), Australian National University (ANU), Swinburne University of Technology [Melbourne], Département d'Optronique (DOPT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Chalcogenide, business.industry, Scanning electron microscope, Mid infrared, Physics::Optics, Statistical and Nonlinear Physics, Cladding (fiber optics), 01 natural sciences, Atomic and Molecular Physics, and Optics, Silicon-germanium, Supercontinuum, 010309 optics, chemistry.chemical_compound, Wavelength, chemistry, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Trimming, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report a simple post-process technique that harnesses a hybrid chalcogenide/silicon-germanium system for the control of waveguide dispersion. By adding a chalcogenide top cladding to a SiGe/Si waveguide, we can substantially change the dispersive properties, which underpin the generation of a supercontinuum. In our particular example, we experimentally show that a shift from anomalous to normal dispersion takes place. We numerically study the dispersion dependence on the chalcogenide thickness and show how to use this additional degree of freedom to control the position of the zero dispersion wavelengths and hence the spectral span of the supercontinuum. Finally, we compare our approach with more traditional techniques that use geometry for dispersion tailoring.

Published
2019

24. Mid-infrared supercontinuum generation in a low-loss germanium-on-silicon waveguide

Author

Christian Grillet, Stephen J. Madden, Alberto Della Torre, Jean-Michel Hartmann, Milan Sinobad, Barry Luther-Davies, Vincent Reboud, Arnan Mitchell, Christelle Monat, David J. Moss, Jean-Marc Fedeli, Pan Ma, Remi Armand, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
lcsh:Applied optics. Photonics, Waveguide (electromagnetism), Materials science, Silicon, Computer Networks and Communications, chemistry.chemical_element, Germanium, 02 engineering and technology, Octave (electronics), 01 natural sciences, 010309 optics, 020210 optoelectronics & photonics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Absorption (electromagnetic radiation), ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], business.industry, lcsh:TA1501-1820, Atomic and Molecular Physics, and Optics, Supercontinuum, Wavelength, Transverse plane, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business
Abstract

We experimentally demonstrate supercontinuum (SC) generation in a germanium-on-silicon waveguide. This waveguide exhibits propagation loss between 1.2 dB/cm and 1.35 dB/cm in the 3.6 µm–4.5 µm spectral region for both transverse electric (TE) and transverse magnetic (TM) polarizations. By pumping the waveguide with ∼200 fs pulses at 4.6 µm wavelength, we generate a mid-infrared (IR) SC spanning nearly an octave from 3.39 µm to 6.02 µm at the −40 dB level. Through numerical analysis of the evolution of the SC, we attribute the current limit to further extension into the mid-IR mainly to free-carrier absorption.

Published
2021

25. Mid-IR supercontinuum in SiGe waveguide (Conference Presentation)

Author

Regis Orobtchouk, Arnan Mitchell, Christelle Monat, Jean-Michel Hartmann, Alberto Della Torre, Barry Luther-Davies, Christian Grillet, Stephen J. Madden, Salim Boutami, Milan Sinobad, David J. Moss, Jean-Marc Fedeli, and Pan Ma

Subjects
Waveguide (electromagnetism), Silicon photonics, Materials science, business.industry, 02 engineering and technology, 01 natural sciences, Supercontinuum, Silicon-germanium, 010309 optics, chemistry.chemical_compound, 020210 optoelectronics & photonics, chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Published
2018

26. Mid-wavelength Infrared Supercontinuum Generation Spanning 1.4 Octaves in a Silicon-Germanium Waveguide

Author

Barry Luther-Davies, Christelle Monat, Pan Ma, Christian Grillet, Stephen J. Madden, Arnan Mitchell, Milan Sinobad, Jean-Michel Hartmann, Salim Boutami, Regis Orobtchouk, Jean-Marc Fedeli, David J. Moss, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Australian National University (ANU), CUDOS ARC Centre of Excellence, School of Physics, The University of Sydney, Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, Infrared, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Waveguide (optics), law.invention, 010309 optics, chemistry.chemical_compound, law, 0103 physical sciences, Dispersion (optics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business.industry, 021001 nanoscience & nanotechnology, Laser, Silicon-germanium, Supercontinuum, Wavelength, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We report mid-wavelength infrared supercontinuum generation, from 2.6 to 7.3μm, in a CMOS compatible silicon-germanium waveguide. This 1.4 octave bright supercontinuum (~7.5mW on chip generated average power) has been achieved in a low loss (

Published
2018

27. Coherent Supercontinuum Generation in a Silicon-Germanium Waveguide in the Mid Infrared

Author

Pan Ma, Alberto Della Torre, Arnan Mitchell, Milan Sinobad, Christelle Monat, Salim Boutami, Jean-Marc Fedeli, David J. Moss, Jean-Michel Hartmann, Barry Luther-Davies, Regis Orobtchouk, Christian Grillet, Stephen J. Madden, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Australian National University (ANU), CUDOS ARC Centre of Excellence, School of Physics, The University of Sydney, Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Waveguide (electromagnetism), Brightness, Materials science, business.industry, chemistry.chemical_element, Germanium, 7. Clean energy, Supercontinuum, Silicon-germanium, chemistry.chemical_compound, symbols.namesake, chemistry, Dispersion (optics), symbols, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Self-phase modulation, business, Raman spectroscopy
Abstract

International audience; We report high brightness coherent supercontinuum extending from 2.8 to 5.0μm in an air cladded Si0.6Ge0.4/Si waveguide with all-normal dispersion. Supercontinuum is generated by pumping with ~200fs pulses at 3.8μm. Dispersion engineering and low propagation loss (~0.5dB/cm at 3.8μm) allowed us to achieve more than 5mW useful on-chip average power.

Published
2018

28. Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching [Invited]

Author

Adrien Michon, Darren D. Hudson, Neetesh Singh, Guillaume Beaudin, Regis Orobtchouk, Milan Sinobad, Christian Grillet, David Allioux, Eric Magi, Ali Belarouci, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Macquarie University, Centre for Ultra-high-Bandwidth Devices & Optical Systems (CUDOS), The University of Sydney, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL)

Subjects
[PHYS]Physics [physics], Materials science, Plasma etching, Silicon, business.industry, Nanophotonics, chemistry.chemical_element, Nonlinear optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 010309 optics, Frequency comb, chemistry.chemical_compound, chemistry, Etching (microfabrication), Q factor, 0103 physical sciences, Silicon carbide, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report the fabrication and characterization of silicon carbide microdisks on top of silicon pillars suited for applications from near- to mid-infrared. We probe 10 μm diameter disks with different under-etching depths, from 4 μm down to 1.4 μm, fabricated by isotropic plasma etching and extract quality factors up to 8400 at telecom wavelength. Our geometry is suited to present high Q single-mode operation. We experimentally demonstrate high-order whispering-gallery mode suppression while preserving the fundamental gallery mode and investigate some requirements for nonlinear optics applications on this platform, specifically in terms of quality factor and dispersion for Kerr frequency comb generation.

Published
2018

29. Bright on-chip mid-IR supercontinuum generation to 7.7μm in silicon germanium-on-silicon platform

Author

Arnan Mitchell, Salim Boutami, Alberto Della Torre, Pan Ma, Christelle Monat, Milan Sinobad, Stephen J. Madden, David J. Moss, Regis Orobtchouk, Jean-Michel Hartmann, Jean-Marc Fedeli, Barry Luther-Davies, Christian Grillet, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Australian National University (ANU), Karlsruhe Institute of Technology (KIT), Royal Melbourne Institute of Technology University (RMIT University), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Optical amplifier, Waveguide (electromagnetism), Materials science, Silicon, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, Octave (electronics), 01 natural sciences, 7. Clean energy, Supercontinuum, Silicon-germanium, 010309 optics, chemistry.chemical_compound, chemistry, 0103 physical sciences, Dispersion (optics), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

We report mid-IR supercontinuum generation, from 2.9 to 7.7μm, in a CMOS compatible silicon-germanium waveguide. This 1.3 octave bright supercontinuum has been achieved in a low loss dispersion engineered air-clad Si0.6Ge0.4/Si waveguide.

Published
2018
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30. Dispersion engineered air-clad SiGe waveguides with low propagation loss in the mid-infrared

Author

Salim Boutami, Barry Luther-Davies, Pan Ma, Christelle Monat, Christian Grillet, David Allioux, Milan Sinobad, Regis Orobtchouk, David J. Moss, Jean-Marc Fedeli, Stephen J. Madden, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, business.industry, Silicon on insulator, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry, 0103 physical sciences, Dispersion (optics), Sapphire, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Crystalline silicon, Photonics, 0210 nano-technology, business, Absorption (electromagnetic radiation), ComputingMilieux_MISCELLANEOUS
Abstract

Photonic devices operating in the mid-IR (3 μm to 13μm wavelength range) are of great interest for a wide range of applications, such as free-space communications, environmental monitoring or defence. Group IV-based material platforms [1], such as silicon-on-insulator (SOI)[2] and silicon-on-sapphire (SOS)[3] have attracted significant interest for mid-IR integrated photonics. However, absorption in silica beyond 3.5 μm and in sapphire beyond 5.5 μm eventually limits the operational wavelength band of these platforms. More recently, silicon-germanium (SiGe) alloys, with a transparency window potentially extending up to 13 μm depending on the Ge content [4] have emerged as an attractive alternative platform for mid-IR photonics [5-7]. In [6, 7] we reported Si 0.6 Ge 0.4 waveguides buried-in silicon with propagation loss of around 1dB/cm at 4μm, and nonlinear properties somewhat comparable to crystalline silicon between 3.5μm and 5μm.

Published
2017

31. Waveguides for Nonlinear Optics in the Mid-Infrared

Author

Neetesh Singh, Barry Luther-Davies, David J. Moss, Stefano Palomba, Christian Grillet, Stephen J. Madden, David Allioux, Xin Gai, Jean-Marc Fedeli, Stuart D. Jackson, Milan Sinobad, Luca Carletti, Pan Ma, Regis Orobtchouk, Andrew Reid, Darren D. Hudson, Salim Boutami, Benjamin J. Eggleton, Yi Yu, Duk Choi, Rongping Wang, Zhiyong Yang, Christelle Monat, and Steven G. Duval

Subjects
Waveguide (electromagnetism), Nonlinear absorption, Materials science, Silicon, Physics::Instrumentation and Detectors, business.industry, Chalcogenide, Mid infrared, Physics::Optics, Nonlinear optics, chemistry.chemical_element, Supercontinuum, Condensed Matter::Materials Science, Nonlinear system, chemistry.chemical_compound, Optics, chemistry, Mechanics of Materials, Electronic, Optoelectronics, Electronic, Optical and Magnetic Materials, Optical and Magnetic Materials, Nuclear Experiment, business, Nonlinear Sciences::Pattern Formation and Solitons
Abstract

I will review our work on nonlinear waveguides for supercontinuum generation in the mid-infrared focusing on the nonlinear properties and waveguide performance of chalcogenide, silicon and silicon-germanium devices

Published
2017

32. Mid-infrared ultra-short pulses nonlinear measurement of SiGe waveguides

Author

Mickael Brun, Luca Carletti, Pan Ma, Milan Sinobad, Christian Grillet, Barry Luther-Davies, David J. Moss, Sergio Nicoletti, Steve Madden, Yi Yu, S. Ortiz, Christelle Monat, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Australian National University (ANU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon photonics, business.industry, Mid infrared, Nonlinear system, Optics, Electrical and Electronic Engineering, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Electronic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Optical and Magnetic Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

33. Mid-infrared supercontinuum generation in a pure germanium-on-silicon ridge waveguide

Author

Stephen J. Madden, Arnan Mitchell, Alberto Della Torre, Pan Ma, Jean-Marc Fedeli, Milan Sinobad, Remi Armand, David J. Moss, Vincent Reboud, Barry Luther-Davies, Christelle Monat, Jean-Michel Hartmann, Christian Grillet, Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), MIRSICOMB, ANR-17-CE24-0028, GRAPHICS 648546, ANR-17-CE24-0028,MIRSiCOMB,Source COMB intégrée sur plateforme SiGe nonlinéaire émettant dans le moyen infra-rouge(2017), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Optical amplifier, Waveguide (electromagnetism), Materials science, Silicon, business.industry, Long wavelength limit, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Supercontinuum, 010309 optics, 020210 optoelectronics & photonics, chemistry, Attenuation coefficient, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business, Absorption (electromagnetic radiation)
Abstract

International audience; We experimentally demonstrate mid-infrared supercontinuum generation (from 3.53 up to 5.83 μm) in a pure germanium on silicon waveguide. We attribute the long wavelength limit of the supercontinuum to free-carrier absorption.

34. Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses

Author

Milan Sinobad, Christelle Monat, Pierre Labeye, M. Brun, Sergio Ortiz, Luca Carletti, David J. Moss, Steven J. Madden, Barry Luther-Davies, Christian Grillet, David Allioux, J.M. Hartmann, Sergio Nicoletti, Pan Ma, Regis Orobtchouk, Yi Yu, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon, Shanghai Astronomical Observatory [Shanghai] (SHAO), Chinese Academy of Sciences [Beijing] (CAS), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Astrophysique Interprétation Modélisation (AIM (UMR_7158 / UMR_E_9005 / UM_112)), Centre National de la Recherche Scientifique (CNRS)-Institut national des sciences de l'Univers (INSU - CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris Diderot - Paris 7 (UPD7), Laser Physics Centre Research School of Physical Sciences and Engineering (LPC), Australian National University (ANU), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Astrophysique Interprétation Modélisation (AIM (UMR7158 / UMR_E_9005 / UM_112)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
Infrared devices, Materials science, Nonlinear optics, Physics::Optics, Waveguides Femtosecond optical pulse, 02 engineering and technology, 01 natural sciences, Ultrashort pulses, Mid-infrared wavelengths, [SPI.MAT]Engineering Sciences [physics]/Materials, 010309 optics, Four-wave mixing, [SPI]Engineering Sciences [physics], Optics, Multiphoton processes, 0103 physical sciences, Dispersion (optics), Figure of merit, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Self-phase modulation, Optical Kerr effect, Astrophysics::Galaxy Astrophysics, Optical amplifier, Silicon photonics, business.industry, Germanium, Optical physics, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Femtosecond, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; We characterize the nonlinear optical response of low loss Si0.6Ge0.4 / Si waveguides in the mid-infrared between 3.3 mu m and 4 mu m using femtosecond optical pulses. We estimate the three and four-photon absorption coefficients as well as the Kerr nonlinear refractive index from the experimental measurements. The effect of multiphoton absorption on the optical nonlinear Kerr response is evaluated and the nonlinear figure of merit estimated providing some guidelines for designing nonlinear optical devices in the mid-IR. Finally, we compare the impact of free-carrier absorption at mid-infrared wavelengths versus near-infrared wavelengths for these ultra-short pulses. (C) 2015 Optical Society of America

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