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The aim of the research was to study the effect of reduced irrigation on the reproduction and the energy productivity of two tomato cultivars – Marti and Yana. In the research no irrigation was used during the period from the start of the flowering stage to early tomato fruit-ripening stage. The results indicated that the ripening process was accelerated by up to 14.31%, the dry matter in the fruits increased by up to 9.61%, the average tomato yield and the average fruit weight were reduced by up to 18.70% and 20.07% respectively. The total energy inputs in the variants under water deficit were lower by 3.82% in cv. Marti and by 4.82% in cv.Yana, and that resulted in lower overall energy outputs and therefore no energy profit. The energy productivity of Marti and Yana was 0.43 kg/MJ and 0.46 kg/MJ respectively. The results proved Yana to be more tolerant to water deficit than Marti.

peer-reviewed Focused Ion Beam (FIB) lithography has significant advantages over the electron beam counterpart in terms of resist sensitivity, backscattering and proximity effects. Applying the Top Surface Imaging (TSI) principal to FIB lithography could further enhance its capability. In this paper we review different FIB lithography processes which utilise both wet and dry development. As of further development of this technology, we report a novel lithography process which combines focused Cia' ion beam (Cia' FIB) exposure, silylation and oxygen dry etching. The Negative Resist Image by D q Etching (NERIME) is a TSI scheme for DNQhovolak based ICS~SIS and can result in either positive or negative resist images depending on the extent of the ion beam exposure dose. The NERlMF process can resolve nanometer resist patterns as small as 30nm yet maintaining high aspect ratio of up to 15. The proposed lithography scheme could be utilised for advanced prototype IC's fabrication and critical CMOS lithography process steps.

peer-reviewed In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporated e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50??C/cm2 at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms.