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Spin transport via magnon diffusion in magnetic insulators is important for a broad range of spin-based phenomena and devices. However, the absence of the magnon equivalent of an electric force is a bottleneck. In this work, we demonstrate the controlled generation of magnon drift currents in yttrium iron garnet/platinum heterostructures. By performing electrical injection and detection of incoherent magnons, we find magnon drift currents that stem from the interfacial Dzyaloshinskii-Moriya interaction. We can further control the magnon drift by the orientation of the magnetic field. The drift current changes the magnon propagation length by up to $\pm$ 6 % relative to diffusion. We generalize the magnonic spin transport theory to include a finite drift velocity resulting from any inversion asymmetric interaction, and obtain results consistent with our experiments., 6 pages, 3 figures

Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented., Comment: 19 pages, 5 figures

While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses down to $t \approx 2$ nm. We evaluate the boundaries of our model, which are given by the separation and full width at half maximum of the individual Gaussians. Finally, we compare our results from two layer stacks with data from X-ray fluorescence spectroscopy, which is a standard method for measuring ultra thin films.

Successful optimization of the thermoelectric (TE) performance of materials, described by the figure of merit zT, is a key enabler for its application in energy harvesting or Peltier cooling devices. While the zT value of bulk materials is accessible by a variety of commercial measurement setups, precise determination of the zT value for thin and thick films remains a great challenge. This is particularly relevant for films synthesized by electrochemical deposition, where the TE material is deposited onto an electrically conductive seed layer causing an in-plane short circuit. Therefore, a platform for full in-plane zT characterization of electrochemically deposited TE materials is developed, eliminating the impact of the electrically conducting seed layer. The characterization is done using a suspended TE material within a transport device which was prepared by photolithography in combination with chemical etching steps. An analytical model to determine the thermal conductivity is developed and the results verified using finite element simulations. Taken together, the full in-plane zT characterization provides an inevitable milestone for material optimization under realistic conditions in TE devices. �� 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

The presence of nontrivial magnetic topology can give rise to nonvanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn

The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets., Comment: 5 pages, 4 figures

We study the impact of Ga ion exposure on the local and non-local magnetotransport response in heterostructures of the ferrimagnetic insulator yttrium iron garnet and platinum. In particular, we cut the yttrium iron garnet layer in between two electrically separated wires of platinum using a Ga ion beam, and study the ensuing changes in the magnetoresistive response. We find that the non-local magnetoresistance signal vanishes when the yttrium iron garnet film between the Pt wires is fully cut, although the local spin Hall magnetoresistance signal remains finite. This observation corroborates the notion that pure spin currents carried by magnons are crucial for the non-local magnetotransport effects observed in magnetic insulator/metal nanostructures., 5 pages, 3 figures

The presence of non-trivial magnetic topology can give rise to non-vanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn$_{1.8}$PtSn below the spin reorientation temperature $T_\mathrm{SR} \approx 190$K. The magnitude of the topological Hall effect $\rho_\mathrm{xy}^\mathrm{T} = 8$ n$\Omega$m is close to the value reported in bulk Mn$_2$PtSn, and the topological Nernst effect $S_\mathrm{xy}^\mathrm{T} = 115$ nV K$^{-1}$ measured in the same microstructure has a similar magnitude as reported for bulk MnGe ($S_\mathrm{xy}^\mathrm{T} \sim 150$ nV K$^{-1}$), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nano-patterned materials without detrimental magnetization related limitations., Comment: 8 pages, 3 figures