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Topological antiferromagnets have a significant role to play in the modern day electronics and spintronics due to the presence of peculiar symmetries and magnetically driven large anomalous transport behaviour. We report the observation of anomalous Hall effect in Mn3Sn polycrystalline thin films deposited on Al2O3 substrate with a large anomalous Hall conductivity of 65 (Ωcm)−1 at 3 K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment present in this material. The longitudinal resistivity decreases sufficiently for the thin films as compared to the polycrystalline bulk sample used as the target for the film deposition. The anomalous Hall resistivity and conductivity decreases almost linearly with the increase in the temperature. A negative magnetoresistance is observed for all the measured temperatures with the negative decrease in the magnitude with the increase in temperature.

Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature., 7 pages, 5 figures

Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials.

Advanced control over the excitation of ultraconfined polaritons—hybrid light and matter waves—empowers unique opportunities for many nanophotonic functionalities, e.g., on-chip circuits, quantum information processing, and controlling thermal radiation. Recent work has shown that highly asymmetric polaritons are directly governed by asymmetries in crystal structures. Here, we experimentally demonstrate extremely asymmetric and unidirectional phonon polariton (PhP) excitation via directly patterning high-symmetry orthorhombic van der Waals (vdW) crystal α-MoO 3 . This phenomenon results from symmetry breaking of momentum matching in polaritonic diffraction in vdW materials. We show that the propagation of PhPs can be versatile and robustly tailored via structural engineering, while PhPs in low-symmetry (e.g., monoclinic and triclinic) crystals are largely restricted by their naturally occurring permittivities. Our work synergizes grating diffraction phenomena with the extreme anisotropy of high-symmetry vdW materials, enabling unexpected control of infrared polaritons along different pathways and opening opportunities for applications ranging from on-chip photonics to directional heat dissipation.

A two-dimensional topological insulator (2DTI) has an insulating bulk and helical edges robust to nonmagnetic backscattering. While ballistic transport has been demonstrated in micron-scale 2DTIs, larger samples show significant backscattering and a nearly temperature-independent resistance of unclear origin. Spin polarization has been measured, however the degree of helicity is difficult to quantify. Here, we study 2DTI few-layer Na3Bi on insulating Al2O3. A nonlocal conductance measurement demonstrates edge conductance in the topological regime with an edge mean free path ∼100 nm. A perpendicular magnetic field suppresses spin-flip scattering in the helical edges, resulting in a giant negative magnetoresistance (GNMR) up to 80% at 0.9 T. Comparison to theory indicates >96% of scattering is helical spin scattering significantly exceeding the maximum (67%) expected for a nonhelical metal. GNMR, coupled with nonlocal measurements, thus provides an unambiguous experimental signature of helical edges that we expect to be generically useful in understanding 2DTIs.

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness., 8 pages, 6 figures, supplementary material included. Comments welcome

Understanding the air stability of MnBi

Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS

Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity (including the variation with electron density, temperature, and twist angle) showing good quantitative agreement with recent experiments. We contrast this with the alternative Planckian dissipation mechanism that we show is incompatible with available experimental data. An accurate treatment of the electron-phonon scattering requires us to go well beyond the usual treatment, including both interband and intraband processes, considering the finite-temperature dynamical screening of the electron-phonon matrix element, and going beyond the linear Dirac dispersion. In addition to explaining the observations in currently available experimental data, we make concrete predictions that can be tested in ongoing experiments., 25 pages, 15 figures

Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a magnetic field drastically increases the mean free path and drives the system into the ballistic regime with a Landauer-Buttiker conductance. A strong non-linear non-reciprocal current emerges in the diffusive regime with opposite signs on each edge, and vanishes in the ballistic limit. We discuss its detection in state-of-the-art experiments., 4 pages, 4 figures, Accepted for publication in Phys. Rev. B Rapid Communications

Intrinsic magnetic topological insulators offer low disorder and large magnetic band gaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the quantum anomalous Hall (QAH) effect and axion insulator phases have been realized. These observations occur at temperatures significantly lower than the Néel temperature of bulk MnBi

Indium tin oxide (ITO) is a transparent conductor used in applications such as touch screens, smart windows and displays. A key limitation of ITO is its brittle nature, which prohibits its use in flexible electronics. The commercial deposition of high-quality ITO also currently relies on a costly vacuum manufacturing approach. Here we report the centimetre-scale synthesis of flexible two-dimensional ITO using a low-temperature liquid metal printing technique. The approach can directly deposit monolayer or bilayer ITO onto desired substrates, with the resulting bilayer samples offering a transparency above 99.3% and a sheet resistance as low as 5.4 kΩ □−1. We also show that the bilayer ITO features a stratified structure with a pronounced van der Waals spacing. To illustrate the capabilities of the technique, we develop a capacitive touch screen using centimetre-sized monolayer ITO sheets. A liquid metal printing technique can be used to create monolayer and bilayer indium tin oxide, with the bilayer samples offering a transparency above 99.3% and a sheet resistance as low as 5.4 kΩ □−1.

We demonstrate dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current ...

Copyright © 2019 American Chemical Society. The synthesis of graphene on cubic silicon carbide on silicon pseudosubstrates draws enormous interest due to the potential integration of the 2D material with the well-established silicon technology and processing. However, the control of transport properties over large scales on this platform, essential for integrated electronics and photonics applications, has lagged behind so far, due to limitations such as 3C-SiC/Si interface instability and nonuniform graphene coverage. We address these issues by obtaining an epitaxial graphene (EG) onto 3C-SiC on a highly resistive silicon substrate using an alloy-mediated, solid-source graphene synthesis. We report the transport properties of EG grown over large areas directly on 3C-SiC(100) and 3C-SiC(111) substrates, and we present the corresponding physical models. We observe that the carrier transport of EG/3C-SiC is dominated by the graphene-substrate interaction rather than the EG grain size, sharing the same conductivity and same inverse power law as EG on 4H- or 6H-SiC(0001) substrates - although the grain sizes for the latter are vastly different. In addition, we show that the induced oxidation/silicates at the EG/3C-SiC interface generate a p-type charge in this graphene, particularly high for the EG/3C-SiC(001). When silicates are at the interface, the presence of a buffer layer in the EG/3C-SiC(111) system is found to reduce somewhat the charge transfer. This work also indicates that a renewed focus on the understanding and engineering of the EG interfaces could very well enable the long sought-after graphene-based electronics and photonics integrated on silicon.

As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.

In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show that the enhanced Coulomb interaction in quantum-confined elemental Sb nanoflakes drives the system to the excitonic insulator state. The unique feature of the excitonic insulator, a charge density wave (CDW) without periodic lattice distortion, is directly observed. Furthermore, STS shows a gap induced by the CDW near the Fermi surface. Our observations suggest that the Sb(110) nanoflake is an excitonic insulator.

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices., 14 pages, 6 figures

Phonon polaritons-light coupled to lattice vibrations-in polar van der Waals crystals offer unprecedented opportunities for controlling light at the nanoscale due to their anisotropic and ultralow-loss propagation. While their analog plasmon polaritons-light coupled to electron oscillations-have long been studied and exhibit interesting reflections at geometrical edges and electronic boundaries, whether phonon polaritons can be reflected by such barriers has been elusive. Here, the effective and tunable reflection of phonon polaritons at embedded interfaces formed in hydrogen-intercalated α-MoO3 flakes is elaborated upon. Without breaking geometrical continuity, such intercalation interfaces can reflect phonon polaritons with low losses, yielding the distinct phase changes of -0.8π and -0.3π associated with polariton propagation, high efficiency of 50%, and potential electrical tunability. The results point to a new approach to construct on-demand polariton reflectors, phase modulators, and retarders, which may be transplanted into building future polaritonic circuits using van der Waals crystals.

Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics. However, bulk SPhPs inherently propagate isotropically with limited photon confinement, and how to collectively realize ultralarge confinement, in-plane hyperbolicity, and unidirectional propagation remains elusive. Here, we report an approach to solve the aforementioned issues of bulk SPhPs in one go by constructing a heterostructural interface between biaxial van der Waals material (e.g., α-MoO

Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics due to sub-diffraction confinement with low optical losses. Though the polaritonic field confinement can be significantly improved by modifying the dielectric environment, it is challenging to break the fundamental limits in photon confinement and propagation behavior of SPhP modes. In particular, as SPhPs inherently propagate isotropically in these bulk polar dielectrics, how to collectively realize ultra-large field confinement, in-plane hyperbolicity and unidirectional propagation remains elusive. Here, we report an approach to solve the aforementioned issues of bulk polar dielectric's SPhPs at one go by constructing a heterostructural interface between biaxial van der Waals material (e.g., MoO3) and bulk polar dielectric (e.g., SiC, AlN, and GaN). Due to anisotropy-oriented mode couplings at the interface, the hybridized SPhPs with a large confinement factor (>100) show in-plane hyperbolicity that has been switched to the orthogonal direction as compared to that in natural MoO3. More interestingly, this proof of concept allows steerable, angle-dependent and unidirectional polariton excitation by suspending MoO3 on patterned SiC air cavities. Our finding exemplifies a generalizable framework to manipulate the flow of nano-light and engineer unusual polaritonic responses in many other hybrid systems consisting of van der Waals materials and bulk polar dielectrics.

Trisodium bismuthide (Na3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

We investigate the effects of direct deposition of different dielectric materials (AlOx, SiOx, SiNx) onto atomically thin TMDC WS2 on its optical response using atomic layer deposition (ALD), electron beam evaporation (EBE), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. The photoluminescence measurements reveal quenching of the excitonic emission after all deposition processes, which is linked to the increased level of charge doping and associated rise of the trion emission and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes in excitonic emission with the increased levels of lattice disorder and defects. In particular, we show that the different doping levels in a monolayer WS2 capped by a dielectric material are strongly related to the defects in the WS2 crystal introduced by all capping methods, except for ALD. The strong charge doping in the ALD-capped sample seems to be caused by other factors, such as deviations in the dielectric layer stoichiometry or chemical reactions on the monolayer surface, which makes ALD distinct from all other techniques. Overall, the EBE process results in the lowest level of doping and defect densities and in the largest spectral weight of the exciton emission in the PL. Sputtering is revealed as the most aggressive dielectric capping method for WS2, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS2, which can provide valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices.

The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the doping-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family., Comment: 22 pages, 4 figures

Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films upon exposure to atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room temperature electrical transport and atomic force microscopy to determine the oxidation process. After 2 days air exposure a 2 nm thick oxide passivates the surface, corresponding to oxidation of only the top two surface layers, with the underlying layers preserved. This protective oxide layer results in samples that still exhibit metallic conduction even after several days air exposure. Furthermore, the work function decreases from 4.4 eV for pristine MnBi$_2$Te$_4$ to 4.0 eV after the formation of the oxide, along with only a small shift in the core levels indicating minimal doping as a result of air exposure. With the oxide confined to the top surface layers, and the underlying layers preserved, it may be possible to explore new avenues in how to handle, prepare and passivate future MnBi$_2$Te$_4$ devices.

An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n, 28 pages, 14 figures, submitted to Nature Communications

We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$., 22 pages, 4 figures

Monolayer transition metal dichalcogenides are a promising platform to investigate many-body interactions of excitonic complexes. In monolayer tungsten diselenide, the ground-state exciton is dark (spin-indirect), and the valley degeneracy allows low-energy dark momentum-indirect excitons to form. Interactions between the dark exciton species and the optically accessible bright exciton (X) are likely to play significant roles in determining the optical properties of X at high power, as well as limiting the ultimate exciton densities that can be achieved, yet so far little is known about these interactions. Here, we demonstrate long-lived dense populations of momentum-indirect intervalley ($X_K$) and spin-indirect intravalley (D) dark excitons by time-resolved photoluminescence measurements (Tr-PL). Our results uncover an efficient inter-state conversion between X to D excitons through the spin-flip process and the one between D and $X_K$ excitons mediated by the exchange interaction (D + D to $X_K$ + $X_K$). Moreover, we observe a persistent redshift of the X exciton due to strong excitonic screening by $X_K$ exciton with a response time in the timescale of sub-ns, revealing a non-trivial inter-state exciton-exciton interaction. Our results provide a new insight into the interaction between bright and dark excitons, and point to a possibility to employ dark excitons for investigating exciton condensation and the valleytronics.

Trisodium bismuthide (Na

A two-dimensional topological insulator (2DTI) has an insulating bulk and helical edges robust to nonmagnetic backscattering. While ballistic transport has been demonstrated in micron-scale 2DTIs, larger samples show significant backscattering and a nearly temperature-independent resistance of unclear origin. Spin polarization has been measured, however the degree of helicity is difficult to quantify. Here, we study 2DTI few-layer Na

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, it is shown that the novel, ultrathin Ga

We experimentally measure the band dispersions of topological Dirac semimetal ${\mathrm{Na}}_{3}\mathrm{Bi}$ using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown ${\mathrm{Na}}_{3}\mathrm{Bi}$ thin films. We find that the velocities for the lowest-lying conduction and valence bands are $1.6\ifmmode\times\else\texttimes\fi{}{10}^{6}\phantom{\rule{4pt}{0ex}}\mathrm{m}{\mathrm{s}}^{\ensuremath{-}1}$ and $4.2\ifmmode\times\else\texttimes\fi{}{10}^{5}\phantom{\rule{4pt}{0ex}}\mathrm{m}{\mathrm{s}}^{\ensuremath{-}1}$ respectively, significantly higher than previous theoretical predictions. We compare the experimental band dispersions to the theoretical band structures calculated using an increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradient approximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and $GW$ methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the $GW$ method. The results indicate that exchange-correlation effects are important in determining the electronic structure of this ${\mathrm{Na}}_{3}\mathrm{Bi}$, and are likely the origin of the high velocity. The electron velocity is consistent with recent experiments on ultrathin ${\mathrm{Na}}_{3}\mathrm{Bi}$ and also may explain the ultrahigh carrier mobility observed in heavily electron-doped ${\mathrm{Na}}_{3}\mathrm{Bi}$.

We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type doping of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar doping level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air., 46 pages including supporting information, 4 figures in the main paper and 9 figures in the supporting information

The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor1-4. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator5-9, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits4, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far6-8. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases3,10-16. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal3,17 Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25millielectronvolts), suggest that ultrathin Na3Bi is suitable for room-temperature topological transistor operation.

Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic-scale control over organic-inorganic interface structures. In this approach, adsorbate-surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface synthesis of one-dimensional coordination nanostructures based on an iron (Fe)-terpyridine (tpy) interaction borrowed from functional metal-organic complexes used in photovoltaic and catalytic applications. Thermally activated diffusion of sequentially deposited ligands and metal atoms and intraligand conformational changes lead to Fe-tpy coordination and formation of these nanochains. We used low-temperature scanning tunneling microscopy and density functional theory to elucidate the atomic-scale morphology of the system, suggesting a linear tri-Fe linkage between facing, coplanar tpy groups. Scanning tunneling spectroscopy reveals the highest occupied orbitals, with dominant contributions from states located at the Fe node, and ligand states that mostly contribute to the lowest unoccupied orbitals. This electronic structure yields potential for hosting photoinduced metal-to-ligand charge transfer in the visible/near-infrared. The formation of this unusual tpy/tri-Fe/tpy coordination motif has not been observed for wet chemistry synthetic methods and is mediated by the bottom-up on-surface approach used here, offering pathways to engineer the optoelectronic properties and reactivity of metal-organic nanostructures.

The development of ultrahigh-temperature thermoelectric materials could enable thermoelectric topping of combustion power cycles as well as extending the range of direct thermoelectric power generation in concentrated solar power. However, thermoelectric operation temperatures have been restricted to under 1,500 K due to the lack of suitable materials. Here, we demonstrate a thermoelectric conversion material based on high-temperature reduced graphene oxide nanosheets that can perform reliably up to 3,000 K. After a reduction treatment at 3,300 K, the nanosheet film exhibits an increased conductivity to ~4,000 S cm−1 at 3,000 K and a high power factor S2σ = 54.5 µW cm−1 K−2. We report measurements characterizing the film’s thermoelectric properties up to 3,000 K. The reduced graphene oxide film also exhibits a high broadband radiation absorbance and can act as both a radiative receiver and a thermoelectric generator. The printable, lightweight and flexible film is attractive for system integration and scalable manufacturing. The Carnot efficiency and the power output of thermoelectric power generation increase with temperature but current thermoelectrics are characterized up to 1,500 K. Here, Li et al. develop reduced graphene oxide films that can convert heat up to 3,000 K with high power factors, opening the door for novel applications.

An efficient hole-transporting material (HTM) is indispensable for high-performing perovskite solar cells (PSCs), which have recently emerged as a breakthrough photovoltaic technology. Here, we demonstrate the capacity of the transition metal complex (6,6′-bis(1,1-di(pyridin-2-yl)ethyl)-2,2′-bipyridine)-iron(II/III) trifluoromethanesulfonate ([Fe(bpyPY4)](OTf)2+x) to act as an additive-free, solution-processable HTM in PSCs based on the formamidinium lead bromide absorber. State-of-the-art physical methods have been employed to characterize [Fe(bpyPY4)](OTf)2+x and, in particular, to demonstrate its significantly higher conductivity compared to that of the conventional HTM spiro-OMeTAD. A maximum power conversion efficiency of 2.2% was obtained for a device employing [Fe(bpyPY4)](OTf)2+x, which is the first evidence of the applicability as a HTM in a PSC of a solid material in which conductivity is provided by a redox transformation of a transition metal.