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Heterostructures of two-dimensional transition-metal dichalcogenides and ferromagnetic substrates are important candidates for the development of viable new spin- or valleytronic devices. For the prototypical bilayer of WSe2 on top of a ferromagnetic layer of CrI3, we find substantially different coupling of both WSe2 K-valleys to the sublayer. Besides an energy splitting of a few meV, the corresponding excitons have significantly different interlayer character with charge transfer allowed at the K- point but forbidden at K+. The different exciton wave functions result in a distinctly different response to magnetic fields with g factors of about -4.4 and -4.0, respectively. By means of ab initio GW/Bethe-Salpeter equation calculations, these findings establish g factors as tool for investigating the exciton character and shedding light on the detailed quantum-mechanical interplay of magnetic and optical properties which are essential for the targeted development of optoelectronic devices.

A route towards covalent functionalization of chemically inert 2H-MoS2 exploiting sulfur vacancies is explored by means of (TD)DFT and GW/BSE calculations. Functionalization via nitrogen incorporation at sulfur vacancies is shown to result in more stable covalent binding than via thiol incorporation. In this way, defective monolayer MoS2 is repaired and the quasiparticle band structure as well as the remarkable optical properties of pristine MoS2 are restored. Hence, defect-free functionalization with various molecules is possible. Our results for covalently attached azobenzene, as a prominent photo-switch, pave the way to create photoresponsive two-dimensional (2D) materials.

Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for studying fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electronic systems are difficult to realize experimentally, particularly magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D material embedded in a magnetically ordered environment. The strong 1D electronic character originates from the Cr-S chains and the combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening with an effective electron mass ratio of $m^e_X/m^e_Y \sim 50$. This extreme anisotropy experimentally manifests in strong electron-phonon and exciton-phonon interactions, a Peierls-like structural instability and a Fano resonance from a van Hove singularity of similar strength of metallic carbon nanotubes. Moreover, due to the reduced dimensionality and interlayer coupling, CrSBr hosts spectrally narrow (1 meV) excitons of high binding energy and oscillator strength that inherit the 1D character. Overall, CrSBr is best understood as a stack of weakly hybridized monolayers and appears to be an experimentally attractive candidate for the study of exotic exciton and 1D correlated many-body physics in the presence of magnetic order., main: 16 pages, 5 figures; SI: 15 pages, 9 figures

Atomically thin layers of transition metal dichalcogenides (TMDC) have exceptional optical properties, exhibiting a characteristic absorption and emission at excitonic resonances. Due to their extreme flexibility, strain can be used to alter the fundamental exciton energies and line widths of TMDCs. Here, we report on the Stokes shift, i.e. the energetic difference of light absorption and emission, of the A exciton in TMDC mono- and bilayers. We demonstrate that mechanical strain can be used to tune the Stokes shift. We perform optical transmission and photoluminescence (PL) experiments on mono- and bilayers and apply uniaxial tensile strain of up to 1.2% in MoSe2 and WS2 bilayers. An A exciton red shift of -38 meV/% and -70 meV/% is found in transmission in MoSe2 and WS2, while smaller values of -27 meV/% and -62 meV/% are measured in PL, respectively. Therefore, a reduction of the Stokes shift is observed under increasing tensile strain. At the same time, the A exciton PL line widths narrow significantly with -14 meV/% (MoSe2) and -21 meV/% (WS2), demonstrating a drastic change in the exciton-phonon interaction. By comparison with ab initio calculations, we can trace back the observed shifts of the excitons to changes in the electronic band structure of the materials. Variations of the relative energetic positions of the different excitons lead to a decrease of the exciton-phonon coupling. Furthermore, we identify the indirect exciton emission in bilayer WS2 as the ΓK transition by comparing the experimental and theoretical gauge factors.

A route towards covalent functionalization of chemically inert 2H-MoS

Excitons with nonzero momenta and their energy dependence are important for time dependent phenomena such as transport properties or the coupling to external or internal fields, for example in electron energy loss spectroscopy. In this paper we calculate the momentum dependent energy landscape of excitons in rubrene single crystals. We show that singlet excitons exhibit a dispersion that is qualitatively similar to the electronic valence and conduction bands, namely a relatively large bandwidth along $\mathrm{\ensuremath{\Gamma}}$--Y and much flatter bands along $\mathrm{\ensuremath{\Gamma}}$--X and $\mathrm{\ensuremath{\Gamma}}$--Z. However, the absolute value of the bandwidths is significantly weaker than for both electronic bands. Triplet excitons, on the other hand, show much less dispersion and the exciton bands are much flatter than their singlet counterparts.

Subsystem Density-Functional Theory and its extension to excited states, namely, subsystem Time-Dependent Density-Functional Theory, have been proven to be efficient and accurate fragmentation approaches for ground and excited states. In the present study we extend this approach to the subsystem-based description of total systems by means of GW and the Bethe-Salpeter equation (BSE). For this, we derive the working equations starting from a subsystem-based partitioning of the screened-Coulomb interaction for an arbitrary number of subsystems. Making use of certain approximations, we develop a parameter-free approach in which environmental screening contributions are effectively included for each subsystem. We demonstrate the applicability of these approximations by comparing quasi-particle energies and excitation energies from subsystem-based GW/BSE calculations to the supermolecular reference. Furthermore, we demonstrate the computational efficiency and the usefulness of this method for the description of photoinduced processes in complex chemical environments.

How fast is the charge transfer between two layers of transition metal dichalcogenides and where does it take place in momentum space? Two-photon photoemission using high-harmonic probe pulses can answer this question, as the authors demonstrate here for the topmost layers of MoS${}_{2}$. By tuning pump pulses below the topmost-layer gap, they excite electrons in deeper layers and probe only the topmost layer. GW-based tight-binding calculations support the experimental findings and explain why the electron transfer takes place at $\overline{\mathrm{\ensuremath{\Sigma}}}$.

ACS nano 14(11), 15766-15775 (2020). doi:10.1021/acsnano.0c06798, Published by American Chemical Society, Washington, DC

We perform absorption and photoluminescence spectroscopy of trions in hBN-encapsulated WSe$_2$, WS$_2$, MoSe$_2$, and MoS$_2$ monolayers, depending on temperature. The different trends for W- and Mo-based materials are excellently reproduced considering a Fermi-Dirac distribution of bright and dark trions. We find a dark trion, $\rm{X_D^-}$ 19 meV $\textit{below}$ the lowest bright trion, $\rm{X}_1^-$ in WSe$_2$ and WS$_2$. In MoSe$_2$, $\rm{X_D^-}$ lies 6 meV $\textit{above}$ $\rm{X}_1^-$, while $\rm{X_D^-}$ and $\rm{X}_1^-$ almost coincide in MoS$_2$. Our results agree with GW-BSE $\textit{ab-initio}$ calculations and quantitatively explain the optical response of doped monolayers with temperature., Comment: 16 pages including supporting information, 4 figures in the main text, 10 figures in the supporting information

The effect of a magnetic field on the optical absorption in semiconductors has been measured experimentally and modeled theoretically for various systems in previous decades. We present a new first-principles approach to systematically determine the response of excitons to magnetic fields, i.e., exciton $g$ factors. By utilizing the $GW$-Bethe-Salpeter equation methodology we show that $g$ factors extracted from the Zeeman shift of electronic bands are strongly renormalized by many-body effects which we trace back to the extent of the excitons in reciprocal space. We apply our approach to monolayers of transition metal dichalcogenides (${\mathrm{MoS}}_{2}$, ${\mathrm{MoSe}}_{2}$, ${\mathrm{MoTe}}_{2}$, ${\mathrm{WS}}_{2}$, and ${\mathrm{WSe}}_{2}$) with strongly bound excitons for which $g$ factors are weakened by about 30%.

Recently, spatially indirect ("interlayer") excitons have been discovered in bulk 2H-MoTe2. They are theoretically predicted to exist in other Mo-based transition metal dichalcogenides (TMDCs) and are expected to be present in W-based TMDCs as well. We investigate interlayer excitons (XIL) in bulk 2H-MoSe2 and 2H-WSe2 using valley-resolved magneto-reflectance spectroscopy under high magnetic fields of up to 29 T combined with ab initio GW-BSE calculations. In the experiments, we observe interlayer excitons in MoSe2, while their signature is surprisingly absent in WSe2. In the calculations, we find that interlayer excitons exist in both Mo- and W-based TMDCs. However, their energetic positions and their oscillator strengths are remarkably different. In Mo-based compounds, the interlayer exciton resonance XIL is clearly separated from the intralayer exciton X1sA and has a high amplitude. In contrast, in W-based compounds, XIL is close in energy to the intralayer A exciton X1sA and possesses a small oscillator strength, which explains its absence in the experimental data of WSe2. Our combined experimental and theoretical observations demonstrate that interlayer excitons can gain substantial oscillator strength by mixing with intralayer states and hence pave the way for exploring interlayer exciton physics in Mo-based bulk transition metal dichalcogenides.

One- and two-dimensional materials are being intensively investigated due to their interesting properties for next-generation optoelectronic devices. Among these, armchair-edged graphene nanoribbons are very promising candidates with optical properties that are dominated by excitons. In the presence of additional charges, trions (i.e., charged excitons) can occur in the optical spectrum. With our recently developed first-principle many-body approach (Phys. Rev. Lett. 116, 196804), we predict strongly bound trions in free-standing nanoribbons with large binding energies of 140-660 meV for widths of 14.6-3.6 Å. Both for the trions and for the excitons, we observe an almost linear dependency of their binding energies on the band gap. We observe several trion states with different character derived from the corresponding excitons. Because of the large bindings energies, this opens a route to applications by which optical properties are easily manipulated, for example, by electrical fields.

Atomically thin materials such as graphene or MoS2 are of high in-plane symmetry. Crystals with reduced symmetry hold the promise for novel optoelectronic devices based on their anisotropy in current flow or light polarization. Here, we present polarization-resolved optical transmission and photoluminescence spectroscopy of excitons in 1T′-ReSe2. On reducing the crystal thickness from bulk to a monolayer, we observe a strong blue shift of the optical band gap from 1.37 to 1.50 eV. The excitons are strongly polarized with dipole vectors along different crystal directions, which persist from bulk down to monolayer thickness. The experimental results are well reproduced by ab initio calculations based on the GW-BSE approach within LDA+GdW approximation. The excitons have high binding energies of 860 meV for the monolayer and 120 meV for bulk. They are strongly confined within a single layer even for the bulk crystal. In addition, we find in our calculations a direct band gap in 1T′-ReSe2 regardless of crysta...

We present an extension of the tunneling theory for scanning tunneling microcopy (STM) to include different types of vibrational-electronic couplings responsible for inelastic contributions to the tunnel current in the strong-coupling limit. It allows for a better understanding of more complex scanning tunneling spectra of molecules on a metallic substrate in separating elastic and inelastic contributions. The starting point is the exact solution of the spectral functions for the electronic active local orbitals in the absence of the STM tip. This includes electron-phonon coupling in the coupled system comprising the molecule and the substrate to arbitrary order including the anti-adiabatic strong coupling regime as well as the Kondo effect on a free electron spin of the molecule. The tunneling current is derived in second order of the tunneling matrix element which is expanded in powers of the relevant vibrational displacements. We use the results of an ab-initio calculation for the single-particle electronic properties as an adapted material-specific input for a numerical renormalization group approach for accurately determining the electronic properties of a NTCDA molecule on Ag(111) as a challenging sample system for our theory. Our analysis shows that the mismatch between the ab-initio many-body calculation of the tunnel current in the absence of any electron-phonon coupling to the experiment scanning tunneling spectra can be resolved by including two mechanisms: (i) a strong unconventional Holstein term on the local substrate orbital leads to reduction of the Kondo temperature and (ii) a different electron-vibrational coupling to the tunneling matrix element is responsible for inelastic steps in the $dI/dV$ curve at finite frequencies., 34 pages, 26 figure

We employ density functional theory (DFT) to analyze the dispersion of the electronic state that exists at the commensurate interface between a monolayer of 1,4,5,8-naphthalene-tetracarboxylic acid dianhydride (NTCDA) and the Ag(111) surface. First, we present and verify a hydrogen-termination approach which allows a meaningful DFT description of the interface state with relatively thin silver slabs. Complemented with a projection technique which maps the interface electronic structure onto the original Ag(111) Shockley state, the DFT calculations enable us to analyze the evolution of the dispersion of the NTCDA/Ag(111) interface state when changing of the molecular coverage. Our calculations yield a difference between the interface state energy and the Shockley state energy that scales linearly with coverage. Furthermore, they predict a pronounced anisotropy of the dispersion of the interface state at long wavelengths which also depends linearly on the molecular coverage. The dispersion anisotropy is fully confirmed by our Fourier transform (FT) scanning tunneling spectroscopy (STS) experiments performed on a relaxed phase NTCDA/Ag(111) monolayer. Using feature detection STS (FD-STS), we moreover measure a band gap in the interface state band structure at the Brillouin zone boundary which indicates Bragg scattering of the interface state electrons in the periodic potential of the molecular layer. We thus observe an influence of the molecular layer on the interface state both at long (DFT, STS) and short wavelengths (STS).

We discover an excited bound three-particle state, the $2s$ trion, appearing energetically below the $2s$ exciton in monolayer ${\mathrm{WS}}_{2}$, using absorption spectroscopy and ab initio GW and Bethe-Salpeter equation calculations. The measured binding energy of the $2s$ trion (22 meV) is smaller compared to the $1s$ intravalley and intervalley trions (37 and 31 meV). With increasing temperature, the $1s$ and $2s$ trions transfer their oscillator strengths to the respective neutral excitons, establishing an optical fingerprint of trion-exciton resonance pairs. Our discovery underlines the importance of trions for the entire excitation spectrum of two-dimensional semiconductors.

Weakly bound systems, like noble-gas dimers or two-dimensional layered materials (graphite, hexagonal boron nitride, or transition-metal dichalcogenides), exhibit excited electronic states of a particular nature. These so-called exciplex states combine on-site (or intralayer) and charge-transfer (or interlayer) configurations in a well-balanced way. We show by ab initio many-body perturbation theory that the energy and composition of the exciplex states depend sensitively on the bond length or interlayer distance of the material. When the constituents approach each other, the charge-transfer contribution increases and the excitation is redshifted to lower energy. If the system is excited into the exciplex state, then a covalent-like bond results. In consequence, noble-gas dimers form excimer complexes, while layered materials exhibit interlayer contraction.

Even if individual two-dimensional materials own various interesting and unexpected properties, the stacking of such layers leads to van der Waals solids which unite the characteristics of two dimensions with novel features originating from the interlayer interactions. In this topical review, we cover fabrication and characterization of van der Waals heterosructures with a focus on heterobilayers made of monolayers of semiconducting transition metal dichalcogenides. Experimental and theoretical techniques to investigate those heterobilayers are introduced. Most recent findings focusing on different transition metal dichalcogenides heterostructures are presented and possible optical transitions between different valleys, appearance of moire patterns and signatures of moire excitons are discussed. The fascinating and fast growing research on van der Waals hetero-bilayers provide promising insights required for their application as emerging quantum-nano materials., 14 pages, 6 figures

This article belongs to the Special Issue Low Dimensional Materials for Environmental and Biomedical Applications., The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2., This project received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research, innovation programme (grant agreement No. 755655, ERC-StG 2017 project 2D-TOPSENSE), the EU Graphene Flagship funding (Grant Graphene Core 2, 785219), the Netherlands Organisation for Scientific Research (NWO) through the research program Rubicon with project number 680-50-1515, the MINECO (program FIS2015-67367-C2-1-P), and the China Scholarship Council (File NO. 201506120102).

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques also opened the door to study the optical properties of these nanomaterials. We present a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2 and WSe2, with thickness ranging from one layer up to six layers. We analyze the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provides a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2 and WSe2.

Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ${\mathrm{ReSe}}_{2}$ is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted $1T$ structure ($1T$ '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)--local density approximation (LDA) and GdW approximations. We identified the $\overline{\mathrm{\ensuremath{\Gamma}}}\phantom{\rule{0.28453pt}{0ex}}{\overline{M}}_{1}$ direction, which is perpendicular to the $a$ axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point $Z$, and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the $Z$ point.

Niehues, Iris et al., Semiconducting transition metal dichalcogenide (TMDC) monolayers have exceptional physical properties. They show bright photoluminescence due to their unique band structure and absorb more than 10% of the light at their excitonic resonances despite their atomic thickness. At room temperature, the width of the exciton transitions is governed by the exciton–phonon interaction leading to strongly asymmetric line shapes. TMDC monolayers are also extremely flexible, sustaining mechanical strain of about 10% without breaking. The excitonic properties strongly depend on strain. For example, exciton energies of TMDC monolayers significantly redshift under uniaxial tensile strain. Here, we demonstrate that the width and the asymmetric line shape of excitonic resonances in TMDC monolayers can be controlled with applied strain. We measure photoluminescence and absorption spectra of the A exciton in monolayer MoSe2, WSe2, WS2, and MoS2 under uniaxial tensile strain. We find that the A exciton substantially narrows and becomes more symmetric for the selenium-based monolayer materials, while no change is observed for atomically thin WS2. For MoS2 monolayers, the line width increases. These effects are due to a modified exciton–phonon coupling at increasing strain levels because of changes in the electronic band structure of the respective monolayer materials. This interpretation based on steady-state experiments is corroborated by time-resolved photoluminescence measurements. Our results demonstrate that moderate strain values on the order of only 1% are already sufficient to globally tune the exciton–phonon interaction in TMDC monolayers and hold the promise for controlling the coupling on the nanoscale., A.K., M.S., and D.C. acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) through SFB 951 (to A.K.) and SFB 910 (to D.C.) and the School of Nanophotonics SFB 787 (to M.S.). E.M. and G.B. were supported by funding from the European Unions Horizon 2020 research and innovation program under grant agreement No. 696656 (Graphene Flagship) and the Swedish Research Council (VR).

We present a physically intuitive model of molecular quantum dots beyond the constant interaction approximation. It accurately describes their charging behavior and allows the extraction of important molecular properties that are otherwise experimentally inaccessible. The model is applied to data recorded with a noncontact atomic force microscope on three different molecules that act as a quantum dot when attached to the microscope tip. The results are in excellent agreement with first-principles simulations.

Monolayers of transition metal dichalcogenides (TMDCs) have unique optoelectronic properties. Density functional theory allows only for a limited description of the electronic excitation energies in these systems, while a more advanced treatment within many-body perturbation theory employing the $\mathit{GW}/\mathrm{BSE}$ approximation is often rather time consuming. Here, we show that the recently developed $\mathrm{LDA}+\mathit{GdW}$ approach provides an efficient and at the same time reliable description of one-particle energies, as well as optical properties including bound excitons in TMDCs. For five exemplary materials (${\mathrm{MoSe}}_{2}, {\mathrm{MoS}}_{2}, {\mathrm{WSe}}_{2}, {\mathrm{WS}}_{2}$, and ${\mathrm{ReSe}}_{2}$), we discuss the numerical convergence, in particular with respect to k-point sampling, and show that the $\mathit{GdW}/\mathrm{BSE}$ approximation gives results similar to common $\mathit{GW}/\mathrm{BSE}$ calculations. Such efficient approaches are essential to treat larger multilayer systems or defects.

This paper reports the quasiparticle band structure and the optical absorption spectrum of SrO, using many-body perturbation theory. The quasiparticle band structure is calculated within the GW approximation. Taking the electron–hole interaction into consideration, electron–hole pair states and optical excitations are obtained by solving the Bethe–Salpeter equation for the electron–hole two-particle Green function. The calculated band gap for SrO is 6.0 eV, which is in good agreement with the corresponding experimental results. The theoretical result of optical absorption spectrum for SrO is also in close agreement with the experimental data. In particular, the calculated excitation energy for the lowest exciton peak in the optical absorption spectra of SrO reproduces very well the corresponding experimental result.

The power of the $GW$ formalism is, to a large extent, based on the explicit treatment of dynamical correlations in the self-energy. This dynamics is taken into account by calculating the energy dependence of the screened Coulomb interaction $W$, followed by a convolution with the Green's function $G$. In order to obtain the energy dependence of $W$ the prevalent methods are plasmon-pole models and numerical integration techniques. In this paper, we discuss an alternative approach, in which the energy-dependent screening is calculated by determining the resolvent, which is set up from a matrix representation of the dielectric function. On the one hand, this refrains from a numerical energy convolution and allows one to actually write down the energy dependence of $W$ explicitly (like in the plasmon-pole models). On the other hand, the method is at least as accurate as the numerical approaches due to its multipole nature. We discuss the theoretical setup in some detail, give insight into the computational aspects, and present results for Si, C, GaAs, and LiF. Finally, we argue that the analytic representability is not only useful for educational purposes but may also be of avail for the development of theory that goes beyond $GW$.

Bound electron–hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose–Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures., Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.

Atomically thin materials such as graphene or MoS

Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe2 < MoS2 < WSe2 < WS2. Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra., 10 pages, 5 figures, 2 tables, supporting information

Optická kontrola spinových prúdov v topologických izolátoroch je nová možnosť v spintronike. Na porozumenie týchto procesov je nutné zistiť elektrónovú štruktúru nad fermiho hladinou za použitia jednokrokového modelu a inverznej ARPES techniky The optical control of spin currents in topological surface states opens new perspectives in (opto-) spintronics. To understand these processes, a profound knowledge about the dispersion and the spin polarization of both the occupied and the unoccupied electronic states is required. We present a joint experimental and theoretical study on the unoccupied electronic states of the topological insulator Bi2Se3 . We discuss spin- and angle-resolved inverse-photoemission results in comparison with calculations for both the intrinsic band structure and, within the one-step model of (inverse) photoemission, the expected spectral intensities. This allows us to unravel the intrinsic spin texture of the unoccupied bands at the surface of Bi2 Se3.

Before transport data can be understood quantitatively, a few prerequisites have to be fulfilled: the geometric and the electronic structures of the metal/molecule contacts have to be known, and electron correlation effects have to be taken into account. Here we discuss experimental and theoretical approaches to tackle these challenges. On the theoretical side, density-functional theory (including van der Waals-corrections for structural optimization) is combined with many-body perturbation theory and numerical renormalization group theory in order to include all relevant correlation effects. We had already discussed such features in a previous study [Phys. Rev. B 84, 125413 (2011)], but some remaining differences between our calculated spectra and our experimental data from a scanning-tunnelling microscope remained unexplained. Here we show that the explicit incorporation of van der Waals interaction in the calculations, that had been negleted before, yields improved geometric structure and leads to much better agreement with our measured spectra. This clearly demonstrates the significant sensitivity of electronic transport to structural details.PTCDA molecule in a junction between a silver surface and an STM tip.

Almost all experiments and future applications of transition metal dichalcogenide monolayers rely on a substrate for mechanical stability, which can significantly modify the optical spectra of the monolayer. Doping from the substrate might lead to the domination of the spectra by trions. Here we show by ab initio many-body theory that the negative trion (A−) splits into three excitations, with both inter- and intra-valley character, while the positive counterpart (A+) consists of only one inter-valley excitation. Furthermore, the substrate enhances the screening, which renormalizes both band gap and exciton as well as the trion-binding energies. We verify that these two effects do not perfectly cancel each other, but lead to red-shifts of the excitation energies for three different substrates ranging from a wide-bandgap semiconductor up to a metal. Our results explain recently found experimental splittings of the lowest trion line as well as excitation red-shifts on substrates., The optical and electrical properties of atomically thin transition metal dichalcogenides critically depend on the underlying substrate. Here, the authors develop an abinitio many-body formalism to investigate the full spectrum of negative and positive trions in these layered semicondutors.

Due to their unique band structure, single layers of transition metal dichalcogenides are promising for new atomic-scale physics and devices. It has been shown that the band structure and the excitonic transitions can be tuned by straining the material. Recently, the discovery of single-photon emission from localized excitons has put monolayer WSe2 in the spotlight. The localized light emitters might be related to local strain potentials in the monolayer. Here, we measure strain-dependent energy shifts for the A, B, C, and D excitons for uniaxial tensile strain up to 1.4% in monolayer WSe2 by performing absorption measurements. A gauge factor of and is derived for the A, B, C, and D exciton, respectively. These values are in good agreement with ab initio GW-BSE calculations. Furthermore, we examine the spatial strain distribution in the WSe2 monolayer at different applied strain levels. We find that the size of the monolayer is crucial for an efficient transfer of strain from the substrate to the monolayer.

We investigate the adsorption of a single tetracyanoethylene (TCNE) molecule on the silver (001) surface. Adsorption structures, electronic properties, and scanning tunneling microscopy (STM) images are calculated within density-functional theory. Adsorption occurs most favorably in on-top configuration, with the C=C double bond directly above a silver atom and the four N atoms bound to four neighboring Ag atoms. The lowest unoccupied molecular orbital of TCNE becomes occupied due to electron transfer from the substrate. This state dominates the electronic spectrum and the STM image at moderately negative bias. We discuss and employ a spatial extrapolation technique for the calculation of STM and scanning tunneling spectroscopy (STS) images. Our calculated images are in good agreement with experimental data.

Excited states of dicyanovinyl-substituted oligothiophenes are studied using many-body Green's functions theory within the GW approximation and the Bethe-Salpeter equation. By varying the number of oligomer repeat units, we investigate the effects of resonant-antiresonant transition coupling, dynamical screening, and molecular conformations on calculated excitations. We find that the full dynamically screened Bethe-Salpeter equation yields absorption and emission energies in good agreement with experimental data. The effect of resonant-antiresonant coupling on the first singlet π → π* excitation monotonically decreases with increasing size of the molecule, while dynamical screening effects uniformly lower the excitation energies.