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4. Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

Author

Zhou, Yiyin, Ojo, Solomon, Miao, Yuanhao, Tran, Huong, Grant, Joshua M., Abernathy, Grey, Amoah, Sylvester, Bass, Jake, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, and Yu, Shui-Qing

Subjects
Physics - Applied Physics
Abstract

GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance., Comment: 21 pages, 5 figures, and 2 tables

Published
2020

5. Electrically injected GeSn lasers on Si operating up to 100 K

Author

Zhou, Yiyin, Miao, Yuanhao, Ojo, Solomon, Tran, Huong, Abernathy, Grey, Grant, Joshua M., Amoah, Sylvester, Salamo, Gregory, Du, Wei, Liu, Jifeng, Margetis, Joe, Tolle, John, Zhang, Yong-Hang, Sun, Greg, Soref, Richard A., Li, Baohua, and Yu, Shui-Qing

Subjects
Physics - Applied Physics
Abstract

The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K.

Published
2020

6. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Author

Radamson, Henry H., primary, Miao, Yuanhao, additional, Zhou, Ziwei, additional, Wu, Zhenhua, additional, Kong, Zhenzhen, additional, Gao, Jianfeng, additional, Yang, Hong, additional, Ren, Yuhui, additional, Zhang, Yongkui, additional, Shi, Jiangliu, additional, Xiang, Jinjuan, additional, Cui, Hushan, additional, Lu, Bin, additional, Li, Junjie, additional, Liu, Jinbiao, additional, Lin, Hongxiao, additional, Xu, Haoqing, additional, Li, Mengfan, additional, Cao, Jiaji, additional, He, Chuangqi, additional, Duan, Xiangyan, additional, Zhao, Xuewei, additional, Su, Jiale, additional, Du, Yong, additional, Yu, Jiahan, additional, Wu, Yuanyuan, additional, Jiang, Miao, additional, Liang, Di, additional, Li, Ben, additional, Dong, Yan, additional, and Wang, Guilei, additional

Published
2024
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16. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Author

Du, Yong, primary, Wei, Wenqi, additional, Xu, Buqing, additional, Wang, Guilei, additional, Li, Ben, additional, Miao, Yuanhao, additional, Zhao, Xuewei, additional, Kong, Zhenzhen, additional, Lin, Hongxiao, additional, Yu, Jiahan, additional, Su, Jiale, additional, Dong, Yan, additional, Wang, Wenwu, additional, Ye, Tianchun, additional, Zhang, Jianjun, additional, and Radamson, Henry H., additional

Published
2022
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18. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

Author

Du, Yong, Xu, Buqing, Wang, Guilei, Miao, Yuanhao, Li, Ben, Kong, Zhenzhen, Dong, Yan, Wang, Wenwu, Radamson, Henry H., Du, Yong, Xu, Buqing, Wang, Guilei, Miao, Yuanhao, Li, Ben, Kong, Zhenzhen, Dong, Yan, Wang, Wenwu, and Radamson, Henry H.

Abstract

Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch, highly thermal expansion coefficient difference, and huge dissimilarity between group III-V material and Si, which inevitably leads to the formation of high threading dislocation densities (TDDs) and anti-phase boundaries (APBs). In view of the above-mentioned growth problems, this review details the defects formation and defects suppression methods to grow III-V materials on Si substrate (such as GaAs and InP), so as to give readers a full understanding on the group III-V hetero-epitaxial growth on Si substrates. Based on the previous literature investigation, two main concepts (global growth and selective epitaxial growth (SEG)) were proposed. Besides, we highlight the advanced technologies, such as the miscut substrate, multi-type buffer layer, strain superlattice (SLs), and epitaxial lateral overgrowth (ELO), to decrease the TDDs and APBs. To achieve high performance OEICs, the growth strategy and development trend for group III-V material on Si platform were also emphasized.

Published
2022
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19. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Author

Xu, Buqing, primary, Du, Yong, additional, Wang, Guilei, additional, Xiong, Wenjuan, additional, Kong, Zhenzhen, additional, Zhao, Xuewei, additional, Miao, Yuanhao, additional, Wang, Yijie, additional, Lin, Hongxiao, additional, Su, Jiale, additional, Li, Ben, additional, Wu, Yuanyuan, additional, and Radamson, Henry H., additional

Published
2022
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21. Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Author

Kong, Zhenzhen, primary, Wang, Guilei, additional, Liang, Renrong, additional, Su, Jiale, additional, Xun, Meng, additional, Miao, Yuanhao, additional, Gu, Shihai, additional, Li, Junjie, additional, Cao, Kaihua, additional, Lin, Hongxiao, additional, Li, Ben, additional, Ren, Yuhui, additional, Li, Junfeng, additional, Xu, Jun, additional, and Radamson, Henry H., additional

Published
2022
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23. A Compact Model for Nanowire Tunneling-FETs

Author

Lu, Bin, primary, Wang, Dawei, additional, Cui, Yan, additional, Li, Zhu, additional, Chai, Guoqiang, additional, Dong, Linpeng, additional, Zhou, Jiuren, additional, Wang, Guilei, additional, Miao, Yuanhao, additional, Lv, Zhijun, additional, and Lu, Hongliang, additional

Published
2022
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25. Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Author

Zhou, Yiyin, primary, Ojo, Solomon, additional, Wu, Chen-Wei, additional, Miao, Yuanhao, additional, Tran, Huong, additional, Grant, Joshua M., additional, Abernathy, Grey, additional, Amoah, Sylvester, additional, Bass, Jake, additional, Salamo, Gregory, additional, Du, Wei, additional, Chang, Guo-En, additional, Liu, Jifeng, additional, Margetis, Joe, additional, Tolle, John, additional, Zhang, Yong-Hang, additional, Sun, Greg, additional, Soref, Richard A., additional, Li, Baohua, additional, and Yu, Shui-Qing, additional

Published
2021
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26. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Author

Miao, Yuanhao, primary, Wang, Guilei, additional, Kong, Zhenzhen, additional, Xu, Buqing, additional, Zhao, Xuewei, additional, Luo, Xue, additional, Lin, Hongxiao, additional, Dong, Yan, additional, Lu, Bin, additional, Dong, Linpeng, additional, Zhou, Jiuren, additional, Liu, Jinbiao, additional, and Radamson, Henry H., additional

Published
2021
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27. Silicon-based high-integration reconfigurable dipole with SPiN

Author

Pedram Mousavi, Bin Wang, Han Su, Miao Yuanhao, He-Ming Zhang, and Huiyong Hu

Subjects
010302 applied physics, Reconfigurable antenna, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Inductor, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Dipole, law, 0103 physical sciences, Materials Chemistry, Optoelectronics, Plasma channel, Dipole antenna, Standing wave ratio, Electrical and Electronic Engineering, Antenna (radio), 0210 nano-technology, business, Diode
Abstract

To improve the integration of reconfigurable antenna systems, a novel high-integration solid state plasma reconfigurable dipole antenna based on surface PiN (SPiN) diodes was presented in this paper. Silicon-based SPiN diodes were the basic building blocks of plasma channel, and carrier concentration within the intrinsic region achieved a relatively high level (exceeding 1018 cm−3). In this paper, parameters of the plasma region have been extensively discussed, and several optimized band stop filters were also introduced to replace the conventional capacitor and inductor. This method greatly improved the integration of antenna system to meet the requirements of modern communications. The resonant frequencies at 2.43 GHz and 2.53 GHz have been achieved by turning on or off different sections of the dipole. The Voltage Standing Wave Ratio (VSWR) of the antenna was 1.03 and 1.34, respectively. Other parameters of this antenna were also investigated in this paper. Experimental results confirm the usefulness of the SPiN diodes within solid state plasma antenna and other semiconductor fields.

Published
2019

28. Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering

Author

Han Su, Liu Xiangyu, Yibo Wang, Huiyong Hu, HeMing Zhang, Jing Zhang, Miao Yuanhao, Rong-Xi Xuan, Xue Wu, Zhaohuan Tang, Jiayin Yang, and JianJun Song

Subjects
010302 applied physics, Materials science, Photoluminescence, Annealing (metallurgy), Mechanical Engineering, Analytical chemistry, 02 engineering and technology, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, symbols.namesake, Crystallinity, X-ray photoelectron spectroscopy, Mechanics of Materials, Transmission electron microscopy, Physical vapor deposition, 0103 physical sciences, symbols, General Materials Science, 0210 nano-technology, Raman spectroscopy
Abstract

High-quality low Sn-content GeSn film has been grown on tensile strained Ge/Si (100) substrate using a physical vapor deposition reactor and no subsequent annealing was carried out after the deposition of the film. High Resolution X-ray diffraction (HR-XRD) measurement was performed to estimate the crystallinity and the residual strain in the Ge layer. Secondary-ion mass spectrometry (SIMS) and X-ray photoelectron spectrometer (XPS) show Sn incorporation of the film is approximately 3%. High-resolution transmission electron microscopy (TEM) and atomic force microscopy (AFM) results show that the crystallinity of the film is quite good and it shows a smooth surface (RMS = 0.744 nm) in 5 µm × 5 µm scan. Raman spectroscopy and photoluminescence (PL) measurements were carried out to study the structural and optical properties of the film. Room-temperature PL of the film was observed and it results in a decrease in the difference between Γ and L valleys of tensile strained Ge (0.21%) from 87 meV to 76 meV, which makes this method promising for obtaining Pseudo-direct bandgap group IV films.

Published
2018

29. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Author

Du, Yong, Kong, Zhenzhen, Toprak, Muhammet, Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Yu, Jiahan, Li, Ben, Lin, Hongxiao, Han, Jianghao, Dong, Yan, Wang, Wenwu, Radamson, Henry H., Du, Yong, Kong, Zhenzhen, Toprak, Muhammet, Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Yu, Jiahan, Li, Ben, Lin, Hongxiao, Han, Jianghao, Dong, Yan, Wang, Wenwu, and Radamson, Henry H.

Abstract

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski-Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it's threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 degrees C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 x 10(7) cm(-2)). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the, QC 20210524

Published
2021
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30. Strain Modulation of Selectively and/or Globally Grown Ge Layers

Author

Du, Yong, primary, Wang, Guilei, additional, Miao, Yuanhao, additional, Xu, Buqing, additional, Li, Ben, additional, Kong, Zhenzhen, additional, Yu, Jiahan, additional, Zhao, Xuewei, additional, Lin, Hongxiao, additional, Su, Jiale, additional, Han, Jianghao, additional, Liu, Jinbiao, additional, Dong, Yan, additional, Wang, Wenwu, additional, and Radamson, Henry H., additional

Published
2021
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31. High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Author

Zhao, Xuewei, primary, Wang, Guilei, additional, Lin, Hongxiao, additional, Du, Yong, additional, Luo, Xue, additional, Kong, Zhenzhen, additional, Su, Jiale, additional, Li, Junjie, additional, Xiong, Wenjuan, additional, Miao, Yuanhao, additional, Li, Haiou, additional, Guo, Guoping, additional, and Radamson, Henry H., additional

Published
2021
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35. High quality morphology and high Hall mobility of GePb alloys formed by using implantation and annealing process

Author

Huiyong Hu, Jiayin Yang, and Miao Yuanhao

Subjects
Materials science, Atomic force microscopy, Annealing (metallurgy), Hall effect, Analytical chemistry, Surface finish, Rapid thermal annealing
Abstract

The GePb alloys are formed by implanting of Pb into Ge with a Pb dose of 2×1015 cm-2 and 6×1015cm-2 , following with rapid thermal annealing at the temperature of 500°C and 600°C under N2 atmosphere. The root-mean-square roughness of the GePb sample with the implantation dose of 6×1015cm-2 annealed at 600°C is measured to be 1.10 nm characterized by using atomic force microscope in the 5μm×5um scan area, which is the smallest value among reported results. It can be observed from the TEM measurent results that the GePb thickness of the samples with the implantation dose of 2×1015cm-2 and 6×1015cm-2 are approximately 20 nm and 30 nm, respectively. Pb composition of these samples decrease with the increasing of the annealing temperature due to the full precipitation of Pb out of Ge in the film. Temperature-dependent Hall measurement shows that a high Hall mobility of around 230-260 cm2 /Vs has been achieved at the measurement temperature of 80K and this value drops to about 110 cm2 /Vs at 300K. However, these values are both higher than that of traditional Ge sample. These results indicates that GePb alloys is a promising high mobility channel material for the future integrated optoelectronic circuit application.

Published
2020

36. Design and theoretical calculation of novel GeSn fully-depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect

Author

Bin Wang, Genquan Han, Huiyong Hu, Liu Xiangyu, Miao Yuanhao, and Meng Wang

Subjects
010302 applied physics, Materials science, Field (physics), Condensed matter physics, 02 engineering and technology, Orders of magnitude (numbers), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Ion, Quantum dot, 0103 physical sciences, General Materials Science, Work function, Electrical and Electronic Engineering, 0210 nano-technology, Electronic band structure, Quantum tunnelling
Abstract

In this paper, a novel fully-depleted Ge1-xSnx n-Tunneling FET (FD Ge1-xSnx nTFET) with field plate is investigated theoretically based on the experiment previously published. The energy band structures of Ge1-xSnx are calculated by EMP and the band-to-band tunneling (BTBT) parameters of Ge1-xSnx are calculated by Kane's model. The electrical characteristics of FD Ge1-xSnx nTFET and FD Ge1-xSnx nTFET with field plate (FD-FP Ge1-xSnx nTFET) having various Sn compositions are investigated and simulated with quantum confinement model. The results indicated that the GIDL effect is serious in FD Ge1-xSnx nTFET. By employing the field plate structure, the GIDL effect of FD-FP Ge1-xSnx nTFET is suppressed and the off-state current Ioff is decreased more than 2 orders of magnitude having Sn compositions from 0 to 0.06 compared with FD Ge1-xSnx nTFET. The impact of the difference of work function between field plate metal and channel Φfps is also studied. With the optimized Φfps = 0.0 eV, the on-state current Ion = 4.6 × 10−5 A/μm, the off-state current Ioff = 1.6 × 10−13 A/μm and the maximum on/off ration Ion/Ioff = 2.9 × 108 are achieved.

Published
2018

37. Study of energy band modulation of Ge-based material system for monolithic optoelectronic integration chips

Author

HuiYong Hu, Miao Yuanhao, JianJun Song, Wang Bin, Heming Zhang, Wei Qing, Bao Wentao, and Ciqi Zhou

Subjects
010302 applied physics, Materials science, business.industry, Material system, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Modulation, 0103 physical sciences, Optoelectronics, General Materials Science, 0210 nano-technology, business, Electronic band structure
Published
2017

38. Electrically injected GeSn lasers on Si operating up to 100 K

Author

Zhou, Yiyin, primary, Miao, Yuanhao, additional, Ojo, Solomon, additional, Tran, Huong, additional, Abernathy, Grey, additional, Grant, Joshua M., additional, Amoah, Sylvester, additional, Salamo, Gregory, additional, Du, Wei, additional, Liu, Jifeng, additional, Margetis, Joe, additional, Tolle, John, additional, Zhang, Yong-hang, additional, Sun, Greg, additional, Soref, Richard A., additional, Li, Baohua, additional, and Yu, Shui-Qing, additional

Published
2020
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43. Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers

Author

Abernathy, Grey, primary, Zhou, Yiyin, additional, Ojo, Solomon, additional, Miao, Yuanhao, additional, Du, Wei, additional, Sun, Greg, additional, Soref, Richard, additional, Liu, Jifeng, additional, Zhang, Yong-Hang, additional, Mortazavi, Mansour, additional, Li, Baohua, additional, and Yu, Shui-Qing, additional

Published
2020
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45. High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application

Author

Yang, Jiayin, Hu, Huiyong, Miao, Yuanhao, Dong, Linpeng, Wang, Bin, Wang, Wei, Su, Han, Xuan, Rongxi, and Zhang, Heming

Subjects
surfaces,_coatings_films
Abstract

In this paper, we have used magnetron sputtering to grow the high-quality GeSn layer on Ge (100) with Sn compositin up to 7%. The crystallinity of the GeSn layer is pretty good, and the strain relaxation degree of the GeSn layer is evaluated to be approximately 50%. The root mean square (RMS) value is 0.8 nm, and the averaged TDDs in the GeSn layer is 8.7×109 cm-2, which is obtained from the rocking curve of GeSn layer along (004) plane. PL measurement result shows the significant optical emission from the deposited high-quality GeSn layer, which also means that magnetron sputtering is an optional way to achieve the higher Sn composition GeSn luminescent material. To verify whether our deposited GeSn can used for optoelectronic devices, we fabricate the simple vertical p-i-n diode, and the room temperature current-voltage (I-V) characteristic was obtained. This result paves the way for future sputtered-GeSn optimization, which is critical for the optoelectronic application.

Published
2019

46. High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-temperature Magnetron Sputtering for Optoelectronic Application

Author

Linpeng Dong, Rongxi Xuan, Miao Yuanhao, Wei Wang, Huiyong Hu, Bin Wang, and Jiayin Yang

Subjects
Diffraction, Materials science, Photoluminescence, 02 engineering and technology, lcsh:Technology, 01 natural sciences, Article, Crystallinity, 0103 physical sciences, General Materials Science, lcsh:Microscopy, lcsh:QC120-168.85, Diode, 010302 applied physics, p-i-n diode, lcsh:QH201-278.5, magnetron sputtering, lcsh:T, business.industry, Relaxation (NMR), Sputter deposition, 021001 nanoscience & nanotechnology, GeSn layer, lcsh:TA1-2040, Optoelectronics, lcsh:Descriptive and experimental mechanics, averaged TDD, lcsh:Electrical engineering. Electronics. Nuclear engineering, Dislocation, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:TK1-9971, Layer (electronics)
Abstract

In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to 7% was demonstrated. The crystallinity of the GeSn layer was investigated via high-resolution X-ray diffraction (HR-XRD) and the strain relaxation degree of the GeSn layer was evaluated to be approximately 50%. A novel method was also proposed to evaluate the averaged threading dislocation densities (TDDs) in the GeSn layer, which was obtained from the rocking curve of GeSn layer along the (004) plane. The photoluminescence (PL) measurement result shows the significant optical emission (1870 nm) from the deposited high-quality GeSn layer. To verify whether our deposited GeSn can be used for optoelectronic devices, we fabricated the simple vertical p-i-n diode, and the room temperature current&ndash, voltage (I&ndash, V) characteristic was obtained. Our work paves the way for future sputtered-GeSn optimization, which is critical for optoelectronic applications.

Published
2019

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