Search

This study aims at investigating the properties of magnetopolarons (MPs) in III–V compound semiconductors: GaP, GaAs and GaSb crystals. The obtained results from numerical calculation revealed that absolute value of ground-state (GS) binding energy E b of the magnetopolaron is affected by magnetic field, type of crystal as well as the parabolic and asymmetric Gaussian potentials, which leads to a series of interesting phenomena. The study of results obtained provides a good theoretical guidance on optoelectronic devices and quantum information. We have theoretically investigated the origins of these strange phenomena, and our findings provide sound theoretical direction for photoelectric technology and quantum information. [ABSTRACT FROM AUTHOR]

Anisotropy parabolic potential (APP) effects on ground state (GS) energy E 0 and the vibration frequency (VF) λ of weak-coupled magnetopolaron (MP) in asymmetric Gaussian quantum wells (AGQWs) were investigated using the linear combination operator and unitary transformation method. The obtained results showed that E 0 and λ were increased by increasing the barrier height V 0 of AGQWs as well as transverse and longitudinal confined strengths ω x and ω y of APP and decreased with increase in the asymmetric Gaussian confinement potential (AGCP) range R and transverse and longitudinal effective confined lengths l x and l y of APP. Thus, the GS energy and VF of MP could be changed by adjusting the confinement parameters of the APP and AGCP. The study of quantum wells' semiconductor materials has broad potential applications in semiconductor lasers, optoelectronic devices and quantum information. [ABSTRACT FROM AUTHOR]