Search

In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations., Comment: 11 pages, 3 figures, submitted to NGS-11

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method., Comment: Invited talk at 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 2003

The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth., Comment: 12 pages, 3 figures

Mid-infrared semiconductor lasers have emerged as indispensable compact coherent sources for military and commercial applications. While much of the historical emphasis has been on maximizing the output power and/or spectral purity, a recent new focus has been on engineering these lasers to operate as optical frequency combs (OFCs) for broadband real-time spectroscopy. In particular, the combination of low-drive-power and broad gain bandwidth has made interband cascade laser (ICL) OFCs an attractive complement to quantum cascade laser OFCs operating at longer wavelengths. Moreover, ICL combs can potentially be incorporated into fully-integrated dual-comb spectrometers that employ fast, room-temperature IC photodetectors processed on the same chip.However, the high refractive index of the ICL’s GaSb substrate poses some challenges to the optical waveguiding. Because the modal index is considerably lower than that of the substrate, the optical field can penetrate the bottom cladding layer and leak into the GaSb, inducing wavelength-dependent interference that modifies the gain and group velocity dispersion (GVD) profiles. Even when the effect on lasing threshold is small, the comb properties can be adversely affected. Using the sub-threshold Fourier transform technique, we studied ICL combs with various ridge widths, substrate thicknesses, and center wavelengths. This allowed us to evaluate the effects of modal leakage on the GVD. We find that the resonant nature of the substrate modes induces oscillations, which affect both the spectral bandwidth and the phase-locking properties above threshold. Strategies to mitigate the GVD’s undesired and unpredictable spectral variation will be presented.

UNKNOWN

UNKNOWN