Search

We present a comprehensive overview on a new hybrid sputtering-evaporation (HSE) system for the deposition of Cu(In,Ga) Se2 (CIGS) thin-films aimed at photovoltaic applications. Such a technique employs the sputtering process to deposit the metal precursors on suitable rotating transfer cylinders, from which they are subsequently evaporated, in Se atmosphere, on the substrate. This procedure allows to combine the features of both the sputtering and evaporation techniques, enabling a fine tuning of the stoichiometry and an easy transfer to industrial processes. The key elements of this growth method are here explained in detail. The HSE CIGS layers have been investigated through secondary ion mass spectrometry, Raman and photoluminescence spectroscopies, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy. Moreover, the solar cell performance of the grown films has been investigated, through external quantum efficiency and J-V curves under 1 Sun illumination measurements. The obtained experimental results are exhaustively shown and discussed, indicating advantages and open issues of the presented deposition technique.

The present invention relates to novel molecules suitable to the use in the separation/removal of carbon dioxide from gaseous mixtures as liquid-phase carbon dioxide absorbers and suitable to allow the subsequent release of the absorbed carbon dioxide in form of different ionic liquids, preferentially a glycine salt with choline hexanoate, ester between glycine and hexanoic alcohol (hexyl glycinate) and glycerol ester with glycine and hexanoic acid. The present invention also relates to a method and a plant for the capture of carbon dioxide from gaseous mixtures by using an absorber for carbon dioxide in liquid phase with a heating jacket.

In this paper we report a new method for Cu(In,Ga)Se(2) deposition for solar cell application. Differently from the common co-evaporation process, an alterative approach for thin film Cu(In,Ga)Se(2) has been tested: the sputtering deposition of metal elements combined with the selenium evaporation. We have studied the relationships between the growth parameters of our hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films. The cells are completed with a CdS buffer layer deposited by chemical bath deposition and ZnO + ITO deposited by RF sputtering. Test solar cells of 0.5 cm(2) have shown an efficiency of 10% and 2.5% on glass and stainless steel substrate respectively. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

In this work, a new hybrid sputtering-evaporation system providing a scalable process for deposition of Cu(In,Ga)Se2 (CIGS) layers is presented. The growth apparatus has been designed and realized to fit a size suitable for direct industrial transfer. In this process the metal precursors are first of all sputtered on rotating transfer devices, then evaporated on the substrate by local heating in a Se atmosphere. The desired thickness and composition of the CIGS film are obtained by repeated sputtering-evaporation cycles. The cylindrical geometry of the deposition chamber has been designed to accommodate different types of flexible substrates with a maximum size of 20 ï¿1⁄2120 cm2 in a roll-to-roll configuration. Several techniques, including secondary ion mass spectrometry, Raman and photoluminescence spectroscopies, x-ray diffraction, scanning electron microscopy, external quantum efficiency, and I-V under 1 Sun illumination, have been used to test both the as-grown CIGS layers and the solar cell devices based on them. A significant performance and good control of Ga grading and Na content were obtained for solar cells grown at 450 ï¿1⁄2C on polyimide substrates with high deposition rates. In spite of the fact that the present efficiency record for CIGS solar cells on polyimide substrates is 20.4%, the 10.1% obtained using the hybrid method presented in this work is significant because the growth apparatus meets the requirements for direct industrial transfer. In fact, this process is being transferred in a 1 MW production line, where standard CIGS layers are deposited at low temperature on flexible substrates in a single-step process with a 1 mm sec-1 substrate velocity.

Nowadays there are two main approaches to produce CIGS solar cells: sputtering followed by selenization evaporation and coevaporation process. High efficiency solar cells are obtained by the sequential threestage co-evaporation process. On the other hand sputtering system is more suitable for an industrial application but the efficiencies are systematically lower. In our laboratory we have developed a new hybrid sputtering and evaporation system to obtain a scalable process combining the advantages of both techniques. This technique has been already applied to deposition on glass and stainless steel substrates. Quite good results were obtained reaching an efficiency of 15% on glass and 13% on stainless steel substrates respectively. In this paper we report the results obtained on polyimide and thin boron silicate glass (100um) films.

In this work, a new method for Cu(In,Ga)Se2 thin film growth has been tested, which is different from the common co-evaporation and sputtering processes. The purpose of the deposition method proposed is to find a solution that combines the advantages of the sputtering and evaporation solutions for a scalable process to an industrial level. The system object of the paper allows to realize an indirect deposition of the film by sputtering to the substrate. In particular, metal precursors, with the desired ratio, are initially deposited in an area characterized by inert atmosphere, without vapors of selenium, on one or more cylindrical bodies used for the transfer. When the material deposited on the cylindrical bodies is located - as a result of the movement of rotation of the latter - in front of the substrate, where a Se atmosphere is present, it is evaporated by means of localized heating. At the moment, with the new procedure an efficiency of 14.8% has been reached on glass.

This work reports recent results related to Cu(In,Ga)Se2 solar cells obtained using an alternative approach for CIGS growth. Such original approach consists of sputtering deposition of the metal elements combined with selenium co-evaporation, which allows deposition time of the CIGS layer lower than 30 min, matching industrial application requirements. The cylindrical geometry of the deposition chamber can be exploited for a continuous process (roll-to roll approach) and different substrates can be used (11x14 cm2 soda lime glass and 120x14 cm2 stainless steel). Minimodules on glass substrates composed by 14 cells (37x4 mm2) were fabricated obtaining a maximum open circuit voltage of 6681 mV. Test solar cells of 0.5 cm2 on flexible stainless steel substrates have shown an efficiency of 11.9%.

CuInSe2-based solar cells showed long-term stability and the highest conversion efficiencies among thin film solar cells, overcoming 20%. The optoelectronic properties of the absorber layers and interfaces are strongly dependent upon the deposition method and strictly related to the solar cell efficiency. In this work, an alternative approach for CIGS thin film growth has been developed and tested. Such approach consists of sputtering deposition of the metal elements combined with selenium co-evaporation, which allows deposition time of the CIGS layer lower than 30 min, matching industrial application requirements. The relationships between the growth parameters of such hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films have been studied. The CIGS cell performances have been monitored by External Quantum Efficiency measurements and I-V measurements. Test solar cells of 0.5 cm(2) have shown an efficiency of 14% on glass substrates

n this work, an alternative approach for CIGS thin film growth has been tested, which is different from the common co-evaporation process. Such approach consists of sputtering deposition of the metal elements combined with selenium evaporation. This new and easily scalable procedure allows deposition time of the CIGS layer lower than 15 minutes and can be easily applied not only on rigid but also on flexible substrates in a roll to roll configuration, matching industrial application requirements. The relationships between the growth parameters of such hybrid sputtering/evaporation method and the chemical-physical properties of the CIGS films and cells have been studied

OBJECTIVE: To evaluate the effects of prolene mesh on urinary, bowel and sexual function in prolapse surgery. DESIGN: Prospective observational study on consecutive women. SETTING: Two referral uorgynaecological units in Italy. POPULATION: Women requiring prolapse repair for anterior or posterior vaginal prolapse. METHODS: All women were assessed for urinary, bowel, prolapse symptoms and dyspareunia pre- and post-operatively. Urodynamics was performed in selected cases. Surgery consisted of an anterior or posterior repair plus a prolene mesh. Follow up was after 1, 6 and 12 months. The ANOVA test was used for statistical analysis. MAIN OUTCOME MEASURES: Vaginal anatomical restoration, urinary, bowel and sexual function. RESULTS: We recruited 63 women (mean age 63 years) with a mean follow up of 17 months. Anatomically, the success rate was 94%. Thirty-two women had an anterior repair. Among this group, the sexual activity rate did not alter but dyspareunia increased by 20%. Urge and stress incontinence did not change post-operatively but urgency improved in 10% and 13% had vaginal erosion of the mesh. Thirty-one women had a posterior repair. Among this group, sexual activity decreased by 12% and dyspareunia increased in 63%. Constipation improved in 15% and anal incontinence in 4%, and 6.5% of women had vaginal erosion of the mesh and one required mesh removal for pelvic abscess. CONCLUSIONS: Although this study shows good anatomical results with the use of prolene mesh for prolapse repair, there was a high rate of morbidity. We believe that the use of prolene mesh should be abandoned.