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Previously, we presented a new interpretation of quantum mechanics that revealed it is indeed possible to have a local hidden variable that is consistent with Bell's inequality experiments. In that article we suggested that the local hidden variable is associated with vacuum fluctuations. In this article we expound upon that notion by introducing the Theory of Vacuum Texture (TVT). Here we show that replacing the highly restrictive assumptions of the quantization of energy levels in a system with the simpler, less restrictive postulate that there exists a threshold in order for energy to be released. With this new postulate, the models of blackbody radiation is shown to be consistent with the experiments. We also show, that the threshold condition contributes to a localized vacuum energy which leads us to conclude that the uncertainty principle is a statistical effect. These conditions also naturally leads to the prediction that massive particles transition to an ordered state at low temperatures. In addition, we show that thermodynamic laws must be modified to include two heat baths with temperatures: $T$ for dissipative energy levels and $T_{V}$ ($\gg T$) for localized vacuum energy. In total, we show that our threshold postulate agrees with experimental observations of blackbody radiation, the uncertainty principle and quantum statistics without the need of the invoking quantum weirdness.

We introduce a new interpretation of quantum mechanics by examining the Einstein, Podolsky and Rosen's (EPR) paradox and Bell's inequality experiments under the assumption that the vacuum has an inhomogeneous texture for energy levels below the Heisenberg time-energy uncertainty relation. In this article, selected results from the most reliable Bell's inequality experiments will be quantitatively analyzed to show that our interpretation of quantum mechanics creates a new loophole in Bell's inequality, and that the past experimental findings do not contradict our new interpretation. Under the vacuum texture interpretation of quantum mechanics in a Bell's inequality experiment, the states of the pair of particles created at the source (e.g. during parametric down conversion) is influenced by an inhomogeneous vacuum texture sent from the measurement apparatus. We will also show that the resulting pair of particles are not entangled and that the theory of vacuum texture preserves local realism with complete causality. This article will also suggest an experiment to definitively confirm the existence of vacuum texture.

We revisit a classic study [D. S. Hall {\it et al.}, Phys. Rev. Lett. {\bf 81}, 1539 (1998)] of interpenetrating Bose-Einstein condensates in the hyperfine states $\ket{F = 1, m_f = -1}\equiv\ket{1}$ and $\ket{F = 2, m_f = +1}\equiv\ket{2}$ of ${}^{87}$Rb and observe striking new non-equilibrium component separation dynamics in the form of oscillating ring-like structures. The process of component separation is not significantly damped, a finding that also contrasts sharply with earlier experimental work, allowing a clean first look at a collective excitation of a binary superfluid. We further demonstrate extraordinary quantitative agreement between theoretical and experimental results using a multi-component mean-field model with key additional features: the inclusion of atomic losses and the careful characterization of trap potentials (at the level of a fraction of a percent)., Comment: 4 pages, 3 figures (low res.), to appear in PRL

The spatial profile of the magnetization of Mn12 crystals in a swept magnetic field applied along the easy axis is determined from measurements of the local magnetic induction along the sample surface using an array of Hall sensors. We find that the magnetization is not uniform inside the sample, but rather shows some spatial oscillations which become more prominent around the resonance field values. Moreover, it appears that different regions of the sample are at resonance at different values of the applied field and that the sweep rate of the internal magnetic induction is spatially non-uniform. We present a model which describes the evolution of the non-uniformities as a function of the applied field. Finally we show that the degree of non-uniformity can be manipulated by sweeping the magnetic field back and forth through part of the resonance., Comment: 6 pages, 5 figures; A typo was corrected in Eq. (8)

In magnetic fields applied parallel to the anisotropy axis, the magnetization of Mn$_{12}$ has been measured in response to a field that is swept back and forth across the resonances corresponding to steps $N=4,5,...9$. The fraction of molecules remaining in the metastable well after each sweep through the resonance is inconsistent with expectations for an ensemble of identical molecules. The data are consistent instead with the presence of a broad distribution of tunnel splittings. A very good fit is obtained for a Gaussian distribution of the second-order anisotropy tunneling parameter $X_E=-\ln(\mid E\mid/2D)$. We show that dipolar shuffling is a negligible effect which cannot explain our data., Comment: minor corrections (PACS nos, signs in Fig. 2)

We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$-acetate as a function of magnetic field applied along the easy axis of magnetization for a series of closely-spaced temperatures between 0.24 K and 1.9 K. We map out a region in the $H-T$ plane where ground state tunneling is observed, a region where tunneling proceeds via thermally-assisted tunneling, and a crossover region where both participate in the relaxation. We observe the occasional absence of ground-state tunneling under conditions where one would expect it to be present, and suggest a resolution to the enigma., Comment: 5 pages including 4 figures. Minor revisions to clarify explanations

In magnetic fields applied parallel to the anisotropy axis, the relaxation of the magnetization of Mn$_{12}$ measured for different sweep rates is shown to collapse onto a single scaled curve. The form of the scaling implies that the dominant symmetry-breaking process that gives rise to tunneling is a locally varying second-order anisotropy, forbidden by tetragonal symmetry in the perfect crystal, which gives rise to a broad distribution of tunnel splittings in a real crystal of Mn$_{12}$-acetate. Different forms applied to even and odd-numbered steps provide a distinction between even step resonances (associated with crystal anisotropy) and odd resonances (which require a transverse component of magnetic field)., Comment: 4 pages, 5 figures. New title; text more clearly written

We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$ acetate as a function of magnetic field applied along the easy axis of magnetization. Data taken at a series of closely-spaced temperatures between 0.24 K and 1.4 K provide strong new evidence for an abrupt ``first-order'' transition between thermally-assisted relaxation and magnetic decay via quantum tunneling., Comment: 4 pages, including 7 figures

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_{\sigma}(n,T)$, where $H_{\sigma}$ obeys the empirical relation $H_{\sigma}=A (n) [\Delta(n)^2 +T^2]^{1/2}$. The characteristic energy $k_B \Delta$ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density $n_0$, signaling the approach to a zero-temperature quantum phase transition. We show that $H_{\sigma}=AT$ for densities near $n_0$., Comment: 4 pages, 5 figures; improved data analysis, paper extensively revised

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states., Comment: 4 pages, 2 figures

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0., Comment: 4 pages, including 4 figures. References added

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H

This paper has been withdrawn by the authors. Measurements at many different angles spanning a broad range of electron densities indicate that the observed doubling of the period of Shubnikov-de Haas oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full interpretation of our data will be posted at a later date., Comment: This paper has been withdrawn. Measurements at different angles spanning a broad range of electron densities indicate that the doubling of the period of SdH oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full paper will be posted at a later date

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems., Comment: References added and updated. To be published in Phys. Rev. B