Search

We revisit a classic study [D. S. Hall {\it et al.}, Phys. Rev. Lett. {\bf 81}, 1539 (1998)] of interpenetrating Bose-Einstein condensates in the hyperfine states $\ket{F = 1, m_f = -1}\equiv\ket{1}$ and $\ket{F = 2, m_f = +1}\equiv\ket{2}$ of ${}^{87}$Rb and observe striking new non-equilibrium component separation dynamics in the form of oscillating ring-like structures. The process of component separation is not significantly damped, a finding that also contrasts sharply with earlier experimental work, allowing a clean first look at a collective excitation of a binary superfluid. We further demonstrate extraordinary quantitative agreement between theoretical and experimental results using a multi-component mean-field model with key additional features: the inclusion of atomic losses and the careful characterization of trap potentials (at the level of a fraction of a percent)., Comment: 4 pages, 3 figures (low res.), to appear in PRL

The spatial profile of the magnetization of Mn12 crystals in a swept magnetic field applied along the easy axis is determined from measurements of the local magnetic induction along the sample surface using an array of Hall sensors. We find that the magnetization is not uniform inside the sample, but rather shows some spatial oscillations which become more prominent around the resonance field values. Moreover, it appears that different regions of the sample are at resonance at different values of the applied field and that the sweep rate of the internal magnetic induction is spatially non-uniform. We present a model which describes the evolution of the non-uniformities as a function of the applied field. Finally we show that the degree of non-uniformity can be manipulated by sweeping the magnetic field back and forth through part of the resonance., Comment: 6 pages, 5 figures; A typo was corrected in Eq. (8)

We used a Josephson junction as a radiation detector to look for evidence of the emission of electromagnetic radiation during magnetization avalanches in a crystal assembly of Mn_12-Acetate. The crystal assembly exhibits avalanches at several magnetic fields in the temperature range from 1.8 to 2.6 K with durations of the order of 1 ms. Although a recent study shows evidence of electromagnetic radiation bursts during these avalanches [J. Tejada, et al., Appl. Phys. Lett. {\bf 84}, 2373 (2004)], we were unable to detect any significant radiation at well-defined frequencies. A control experiment with external radiation pulses allows us to determine that the energy released as radiation during an avalanche is less than 1 part in 10^4 of the total energy released. In addition, our avalanche data indicates that the magnetization reversal process does not occur uniformly throughout the sample., Comment: 4 RevTeX pages, 3 eps figures

We use millimeter wave radiation to manipulate the populations of the energy levels of a single crystal molecular magnet Fe8. When a continuous wave radiation is in resonance with the transitions from the ground state to the first excited state, the equilibrium magnetization exhibits a dip. The position of this dip varies linearly with the radiation frequency. Our results provide a lower bound of 0.17 ns for transverse relaxation time and suggest the possibility that single-molecule magnets might be utilized for quantum computation., Comment: 16 pages, 3 figures

In magnetic fields applied parallel to the anisotropy axis, the magnetization of Mn$_{12}$ has been measured in response to a field that is swept back and forth across the resonances corresponding to steps $N=4,5,...9$. The fraction of molecules remaining in the metastable well after each sweep through the resonance is inconsistent with expectations for an ensemble of identical molecules. The data are consistent instead with the presence of a broad distribution of tunnel splittings. A very good fit is obtained for a Gaussian distribution of the second-order anisotropy tunneling parameter $X_E=-\ln(\mid E\mid/2D)$. We show that dipolar shuffling is a negligible effect which cannot explain our data., Comment: minor corrections (PACS nos, signs in Fig. 2)

We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$-acetate as a function of magnetic field applied along the easy axis of magnetization for a series of closely-spaced temperatures between 0.24 K and 1.9 K. We map out a region in the $H-T$ plane where ground state tunneling is observed, a region where tunneling proceeds via thermally-assisted tunneling, and a crossover region where both participate in the relaxation. We observe the occasional absence of ground-state tunneling under conditions where one would expect it to be present, and suggest a resolution to the enigma., Comment: 5 pages including 4 figures. Minor revisions to clarify explanations

In magnetic fields applied parallel to the anisotropy axis, the relaxation of the magnetization of Mn$_{12}$ measured for different sweep rates is shown to collapse onto a single scaled curve. The form of the scaling implies that the dominant symmetry-breaking process that gives rise to tunneling is a locally varying second-order anisotropy, forbidden by tetragonal symmetry in the perfect crystal, which gives rise to a broad distribution of tunnel splittings in a real crystal of Mn$_{12}$-acetate. Different forms applied to even and odd-numbered steps provide a distinction between even step resonances (associated with crystal anisotropy) and odd resonances (which require a transverse component of magnetic field)., Comment: 4 pages, 5 figures. New title; text more clearly written

We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$ acetate as a function of magnetic field applied along the easy axis of magnetization. Data taken at a series of closely-spaced temperatures between 0.24 K and 1.4 K provide strong new evidence for an abrupt ``first-order'' transition between thermally-assisted relaxation and magnetic decay via quantum tunneling., Comment: 4 pages, including 7 figures

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_{\sigma}(n,T)$, where $H_{\sigma}$ obeys the empirical relation $H_{\sigma}=A (n) [\Delta(n)^2 +T^2]^{1/2}$. The characteristic energy $k_B \Delta$ associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density $n_0$, signaling the approach to a zero-temperature quantum phase transition. We show that $H_{\sigma}=AT$ for densities near $n_0$., Comment: 4 pages, 5 figures; improved data analysis, paper extensively revised

Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states., Comment: 4 pages, 2 figures

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0., Comment: 4 pages, including 4 figures. References added

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H

This paper has been withdrawn by the authors. Measurements at many different angles spanning a broad range of electron densities indicate that the observed doubling of the period of Shubnikov-de Haas oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full interpretation of our data will be posted at a later date., Comment: This paper has been withdrawn. Measurements at different angles spanning a broad range of electron densities indicate that the doubling of the period of SdH oscillations, which we had attributed to a transition to a new spin-ordered phase, is also consistent with an alternative explanation. A full paper will be posted at a later date

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems., Comment: References added and updated. To be published in Phys. Rev. B

In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance is seen in B=0, suggesting that the anomalous behavior in zero field is observed only when the system is in a degenerate (quantum) state. The temperature dependence of the resistance is found to be qualitatively similar in B=0 and at integer Landau level filling factors., Comment: 3 pages, 3 figures