1. Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells
- Author
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Zetao Ding, Chenxia Kan, Shengguo Jiang, Meili Zhang, Hongyu Zhang, Wei Liu, Mingdun Liao, Zhenhai Yang, Pengjie Hang, Yuheng Zeng, Xuegong Yu, and Jichun Ye
- Subjects
Science - Abstract
Abstract Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (V OCs), impeding their widespread application in the promising perovskite/silicon tandem solar cells (TSCs) that hold a potential to break 30% module efficiency. To address this, we have developed a highly passivated p-type TOPCon structure by optimizing the oxidation conditions, boron in-diffusion, and aluminium oxide hydrogenation, thus pronouncedly improving the implied V OC (iV OC) of symmetric samples with p-type TOPCon structures on both sides to 715 mV and the V OC of completed double-sided TOPCon bottom cells to 710 mV. Consequently, integrating with perovskite top cells, our proof of concept of 1 cm2 n-i-p perovskite/silicon TSCs exhibit V OCs exceeding 1.9 V and a high efficiency of 28.20% (certified 27.3%), which paves a way for TOPCon cells in the commercialization of future tandems.
- Published
- 2024
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