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113 results on '"Mehandru, R."'

1. Process Innovations for Future Technology Nodes with Back-Side Power Delivery and 3D Device Stacking

Author

Kobrinsky, M., primary, Silva, J. D, additional, Mannebach, E., additional, Mills, S., additional, El Qader, M. Abd, additional, Adebayo, O., additional, Radhakrishna, N. Arkali, additional, Beasley, M., additional, Chawla, J., additional, Chugh, S., additional, Clinton, E., additional, Dasgupta, A., additional, Desai, U., additional, De Re, E., additional, Dewey, G., additional, Edwards, T., additional, Engel, C., additional, Galatage, R., additional, Ghani, T., additional, Gudmundsson, V., additional, Hibbeler, L., additional, Hicks, J., additional, Krist, B., additional, Mehandru, R., additional, Meric, I., additional, Morrow, P., additional, Nandi, D., additional, Pantuso, D., additional, Patel, P., additional, Pawashe, C., additional, Radosavljevic, M., additional, Ramamurthy, R., additional, Samanta, D., additional, Cekli, S., additional, Shoer, L., additional, Amour, A. St, additional, Tan, L. H., additional, Yemenicioglu, S., additional, Wang, X., additional, and Wiedemer, J. A., additional

Published
2023
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2. Novel Cell Architectures with Back-side Transistor Contacts for Scaling and Performance

Author

Kobrinsky, M., primary, Silva, J. D, additional, Mannebach, E., additional, Mills, S., additional, Qader, M. Abd El, additional, Adebayo, O., additional, Radhakrishna, N. Arkali, additional, Beasley, M., additional, Chawla, J., additional, Chugh, S., additional, Dasgupta, A., additional, Desai, U., additional, Re, E. De, additional, Dewey, G., additional, Edwards, T., additional, Engel, C., additional, Gudmundsson, V., additional, Hicks, J., additional, Krist, B., additional, Mehandru, R., additional, Meric, I., additional, Morrow, P., additional, Nandi, D., additional, Patel, P., additional, Ramamurthy, R., additional, Samanta, D., additional, Shoer, L., additional, Amour, A. St, additional, Tan, L. H., additional, Yemenicioglu, S., additional, Wang, X., additional, and Ghani, T., additional

Published
2023
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4. TCAD for logic technology process development

Author

Cea, S., primary, Berrada, S., additional, Ghosh, K., additional, Hasan, S., additional, Keys, P., additional, Mehandru, R., additional, Obradovic, B., additional, Tiwari, V., additional, Weber, C., additional, and Stettler, M., additional

Published
2021
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18. Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing.

Author

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J., Luo, B., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., Osinsky, A. V., and Norris, P. E.

Subjects
QUANTUM wells, DIODES, QUANTUM tunneling
Abstract

Multi-quantum-well GaN/InGaN heterojunction diodes prepared by metalorganic chemical vapor deposition on sapphire showed effects of strong tunneling in their I–V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice (SL). The injection of moderately high forward currents through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL. These results may have relevance to the aging characteristics of light-emitting diodes under bias. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2002
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19. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size

Author

Natarajan, S., primary, Agostinelli, M., additional, Akbar, S., additional, Bost, M., additional, Bowonder, A., additional, Chikarmane, V., additional, Chouksey, S., additional, Dasgupta, A., additional, Fischer, K., additional, Fu, Q., additional, Ghani, T., additional, Giles, M., additional, Govindaraju, S., additional, Grover, R., additional, Han, W., additional, Hanken, D., additional, Haralson, E., additional, Haran, M., additional, Heckscher, M., additional, Heussner, R., additional, Jain, P., additional, James, R., additional, Jhaveri, R., additional, Jin, I., additional, Kam, H., additional, Karl, E., additional, Kenyon, C., additional, Liu, M., additional, Luo, Y., additional, Mehandru, R., additional, Morarka, S., additional, Neiberg, L., additional, Packan, P., additional, Paliwal, A., additional, Parker, C., additional, Patel, P., additional, Patel, R., additional, Pelto, C., additional, Pipes, L., additional, Plekhanov, P., additional, Prince, M., additional, Rajamani, S., additional, Sandford, J., additional, Sell, B., additional, Sivakumar, S., additional, Smith, P., additional, Song, B., additional, Tone, K., additional, Troeger, T., additional, Wiedemer, J., additional, Yang, M., additional, and Zhang, K., additional

Published
2014
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20. Process modeling for advanced device technologies

Author

Cea, S. M., primary, Botelho, S., additional, Chaudhry, A., additional, Fleischmann, P., additional, Giles, M. D., additional, Grigoriev, A., additional, Kaushik, A., additional, Keys, P. H., additional, Kennel, H. W., additional, Lilak, A. D., additional, Mehandru, R., additional, Stettler, M., additional, Voinov, B., additional, Voynich, N., additional, Weber, C., additional, and Zhavoronok, N., additional

Published
2013
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21. Hydrogen sensors based on Sc 2 O 3 /AlGaN/GaN high electron mobility transistors

Author

Kang, B. S., primary, Mehandru, R., additional, Kim, S., additional, Ren, F., additional, Fitch, R. C., additional, Gillespie, J. K., additional, Moser, N., additional, Jessen, G., additional, Jenkins, T., additional, Dettmer, R., additional, Via, D., additional, Crespo, A., additional, Baik, K. H., additional, Gila, B. P., additional, Abernathy, C. R., additional, and Pearton, S. J., additional

Published
2005
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22. AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing

Author

Kang, B. S., primary, Kim, S., additional, Kim, J., additional, Mehandru, R., additional, Ren, F., additional, Baik, K., additional, Pearton, S. J., additional, Gila, B. P., additional, Abernathy, C. R., additional, Pan, C.‐C., additional, Chen, G.‐T., additional, Chyi, J.‐I., additional, Chandrasekaran, V., additional, Sheplak, M., additional, Nishida, T., additional, and Chu, S. N. G., additional

Published
2005
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23. Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Author

Kang, B. S., primary, Mehandru, R., additional, Kim, S., additional, Ren, F., additional, Fitch, R. C., additional, Gillespie, J. K., additional, Moser, N., additional, Jessen, G., additional, Jenkins, T., additional, Dettmer, R., additional, Via, D., additional, Crespo, A., additional, Gila, B. P., additional, Abernathy, C. R., additional, and Pearton, S. J., additional

Published
2004
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24. AlGaN/GaN HEMT based liquid sensors

Author

Mehandru, R., primary, Luo, B., additional, Kang, B.S., additional, Kim, Jihyun, additional, Ren, F., additional, Pearton, S.J., additional, Pan, C.-C., additional, Chen, G.-T., additional, and Chyi, J.-I., additional

Published
2004
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25. Small signal measurement of Sc2O3 AlGaN/GaN moshemts

Author

Luo, B., primary, Mehandru, R., additional, Kang, B.S., additional, Kim, J., additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Gotthold, D., additional, Birkhahn, R., additional, Peres, B., additional, Fitch, R., additional, Gillespie, J.K., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, and Crespo, A., additional

Published
2004
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27. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Author

Luo, B., primary, Mehandru, R., additional, Kim, Jihyun, additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Gotthold, D., additional, Birkhahn, R., additional, Peres, B., additional, Fitch, R.C., additional, Moser, N., additional, Gillespie, J.K., additional, Jessen, G.H., additional, Jenkins, T.J., additional, Yannuzi, M.J., additional, Via, G.D., additional, and Crespo, A., additional

Published
2003
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30. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

Author

Mehandru, R., primary, Luo, B., additional, Kim, J., additional, Ren, F., additional, Gila, B. P., additional, Onstine, A. H., additional, Abernathy, C. R., additional, Pearton, S. J., additional, Gotthold, D., additional, Birkhahn, R., additional, Peres, B., additional, Fitch, R., additional, Gillespie, J., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, and Crespo, A., additional

Published
2003
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32. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface

Author

Ren, F., primary, Luo, B., additional, Kim, J., additional, Mehandru, R., additional, Gila, B. P., additional, Onstine, A. H., additional, Abernathy, C. R., additional, Pearton, S. J., additional, Fitch, R., additional, Gillespie, J., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, Crespo, A., additional, and Irokawa, Y., additional

Published
2003
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33. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN∕GaN high electron mobility transistors

Author

Luo, B., primary, Mehandru, R., additional, Kim, Jihyun, additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, Gotthold, D., additional, Birkhahn, R., additional, Peres, B., additional, Fitch, R.C., additional, Moser, N., additional, Gillespie, J.K., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, and Crespo, A., additional

Published
2003
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34. Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

Author

Gillespie, J.K., primary, Fitch, R.C., additional, Sewell, J., additional, Dettmer, R., additional, Via, G.D., additional, Crespo, A., additional, Jenkins, T.J., additional, Luo, B., additional, Mehandru, R., additional, Kim, J., additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, and Pearton, S.J., additional

Published
2002
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35. Inversion behavior in Sc2O3/GaN gated diodes

Author

Kim, Jihyun, primary, Mehandru, R., additional, Luo, B., additional, Ren, F., additional, Gila, B. P., additional, Onstine, A. H., additional, Abernathy, C. R., additional, Pearton, S. J., additional, and Irokawa, Y., additional

Published
2002
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39. Charge pumping in Sc2O3∕GaN gated mos diodes

Author

Kim, J., primary, Mehandru, R., additional, Luo, B., additional, Ren, F., additional, Gila, B.P., additional, Onstine, A.H., additional, Abernathy, C.R., additional, Pearton, S.J., additional, and Irokawa, Y., additional

Published
2002
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42. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

Author

Luo, B., primary, Mehandru, R., additional, Kim, J., additional, Ren, F., additional, Gila, B. P., additional, Onstine, A. H., additional, Abernathy, C. R., additional, Pearton, S. J., additional, Fitch, R., additional, Gillespie, J., additional, Jenkins, T., additional, Sewell, J., additional, Via, D., additional, Crespo, A., additional, and Irokawa, Y., additional

Published
2002
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43. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes

Author

Kim, Jihyun, primary, Gila, B. P., additional, Mehandru, R., additional, Luo, B., additional, Onstine, A. H., additional, Abernathy, C. R., additional, Ren, F., additional, Allums, K. K., additional, Dwivedi, R., additional, Forgarty, T. N., additional, Wilkins, R., additional, Irokawa, Y., additional, and Pearton, S. J., additional

Published
2002
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49. Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors.

Author

Kang, B. S., Mehandru, R., Kim, S., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Gila, B. P., Abernathy, C. R., and Pearton, S. J.

Subjects
*TRANSISTORS, *ELECTRON mobility, *DIODES, *ELECTRONICS, *ELECTRIC resistance, *SEMICONDUCTORS
Abstract

Pt contacted AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectrics show reversible changes in drain–source current upon exposure to H2-containing ambients, even at room temperature. The changes in current (as high as 3 mA for relatively low gate voltage and drain–source voltage) are approximately an order of magnitude larger than for Pt/GaN Schottky diodes and a factor of 5 larger than Sc2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) diodes exposed under the same conditions. This shows the advantage of using a transistor structure in which the gain produces larger current changes upon exposure to hydrogen-containing ambients. The increase in current is the result of a decrease in effective barrier height of the MOS gate of 30–50 mV at 25 °C for 10% H2/90% N2 ambients relative to pure N2 and is due to catalytic dissociation of the H2 on the Pt contact, followed by diffusion to the Sc2O3/AlGaN interface. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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50. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation.

Author

Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., and Crespo, A.

Subjects
*METAL oxide semiconductors, *TRANSISTORS, *THIN films
Abstract

We demonstrated that Sc[sub 2]O[sub 3] thin films deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate oxide and as a surface passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs). The maximum drain source current, I[sub DS], reaches a value of over 0.8 A/mm and is ∼40% higher on Sc[sub 2]O[sub 3]/AlGaN/GaN transistors relative to conventional HEMTs fabricated on the same wafer. The metal-oxide-semiconductor HEMTs (MOS-HEMTs) threshold voltage is in good agreement with the theoretical value, indicating that Sc[sub 2]O[sub 3] retains a low surface state density on the A1GaN/GaN structures and effectively eliminates the collapse in drain current seen in unpassivated devices. The MOS-HEMTs can be modulated to +6 V of gate voltage. In particular, Sc[sub 2]O[sub 3] is a very promising candidate as a gate dielectric and surface passivant because it is more stable on GaN than is MgO. [ABSTRACT FROM AUTHOR]

Published
2003
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