Search

Your search keyword '"Mecouch, Will"' showing total 12 results
Start Over Author "Mecouch, Will"
12 results on '"Mecouch, Will"'

1. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Author

Stein, Shane R., Khachariya, Dolar, Mecouch, Will, Mita, Seiji, Reddy, Pramod, Tweedie, James, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramon, and Pavlidis, Spyridon

Abstract

We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes show an ideality factor of 1.05, a turn-on voltage of ~0.7 V, a current rectification ratio of $\sim 10^{11}$ , and a low differential specific ON-resistance that scales with Schottky stripe width in fair agreement with the analytical model. The reverse leakage dependence on Schottky stripe width also agrees well with the analytical model. Implanted p-n junction diodes fabricated on the same wafer exhibit avalanche breakdown in reverse bias with a positive temperature coefficient, but the forward current is limited by a series barrier. Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a p-Schottky contact and forms a second diode back-to-back with the p-n junction. This interpretation is supported by analysis of the capacitance–voltage characteristics of the implanted p-n diodes, epitaxial p-n diodes fabricated with intentional p-Schottky contacts, and comparison to TCAD simulations. Ultimately, the presence of the p-Schottky contact does not hinder JBS diode operation. The use of diffusion-aware designs and/or diffusion reduction represents future directions for Mg implantation technology in GaN power devices.

Published
2024
Full Text
View/download PDF

2. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Author

Stein, Shane R., primary, Khachariya, Dolar, additional, Mecouch, Will, additional, Mita, Seiji, additional, Reddy, Pramod, additional, Tweedie, James, additional, Sierakowski, Kacper, additional, Kamler, Grzegorz, additional, Bockowski, Michal, additional, Kohn, Erhard, additional, Sitar, Zlatko, additional, Collazo, Ramón, additional, and Pavlidis, Spyridon, additional

Published
2023
Full Text
View/download PDF

3. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Author

Khachariya, Dolar, primary, Stein, Shane, additional, Mecouch, Will, additional, Breckenridge, M. Hayden, additional, Rathkanthiwar, Shashwat, additional, Mita, Seiji, additional, Moody, Baxter, additional, Reddy, Pramod, additional, Tweedie, James, additional, Kirste, Ronny, additional, Sierakowski, Kacper, additional, Kamler, Grzegorz, additional, Bockowski, Michal, additional, Kohn, Erhard, additional, Pavlidis, Spyridon, additional, Collazo, Ramón, additional, and Sitar, Zlatko, additional

Published
2022
Full Text
View/download PDF

4. UVC optoelectronics based on AlGaN on AlN single crystal substrates

Author

Reddy, Pramod, primary, Loveless, James, additional, Quinones-Garcia, Cristyan, additional, Khachariya, Dolar, additional, Kirste, Ronny, additional, Pavlidis, Spyridon, additional, Mecouch, Will, additional, Mita, Seiji, additional, Moody, Baxter, additional, Tweedie, James, additional, Kohn, Erhard, additional, Collazo, Ramon, additional, and Sitar, Zlatko, additional

Published
2022
Full Text
View/download PDF

5. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Author

Reddy, Pramod, primary, Mecouch, Will, additional, Hayden Breckenridge, M., additional, Khachariya, Dolar, additional, Bagheri, Pegah, additional, Hyun Kim, Ji, additional, Guan, Yan, additional, Mita, Seiji, additional, Moody, Baxter, additional, Tweedie, James, additional, Pavlidis, Spyridon, additional, Kirste, Ronny, additional, Kohn, Erhard, additional, Collazo, Ramon, additional, and Sitar, Zlatko, additional

Published
2022
Full Text
View/download PDF

7. Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN

Author

Reddy, Pramod, primary, Khachariya, Dolar, additional, Mecouch, Will, additional, Breckenridge, M. Hayden, additional, Bagheri, Pegah, additional, Guan, Yan, additional, Kim, Ji Hyun, additional, Pavlidis, Spyridon, additional, Kirste, Ronny, additional, Mita, Seiji, additional, Kohn, Erhard, additional, Collazo, Ramon, additional, and Sitar, Zlatko, additional

Published
2021
Full Text
View/download PDF

9. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Author

Reddy, Pramod, primary, Hayden Breckenridge, M., additional, Guo, Qiang, additional, Klump, Andrew, additional, Khachariya, Dolar, additional, Pavlidis, Spyridon, additional, Mecouch, Will, additional, Mita, Seiji, additional, Moody, Baxter, additional, Tweedie, James, additional, Kirste, Ronny, additional, Kohn, Erhard, additional, Collazo, Ramon, additional, and Sitar, Zlatko, additional

Published
2020
Full Text
View/download PDF

10. (Invited) Advances in Ion Implantation of GaN and AlN

Author

Collazo, Ramon, primary, Breckenridge, M. Hayden, additional, Klump, Andrew, additional, Guan, Yan, additional, Guo, Qiang, additional, Kim, Ji, additional, Washiyama, Shun, additional, Sarkar, Biplab, additional, Reddy, Pramod, additional, Kirste, Ronny, additional, Mecouch, Will, additional, Mita, Seiji, additional, Tweedie, James, additional, Bockowski, Michal, additional, and Sitar, Zlatko, additional

Published
2019
Full Text
View/download PDF

11. Plasma enhanced chemical vapor deposition of SiO2and SiNxon AlGaN: Band offsets and interface studies as a function of Al composition

Author

Reddy, Pramod, primary, Washiyama, Shun, additional, Mecouch, Will, additional, Hernandez-Balderrama, Luis H., additional, Kaess, Felix, additional, Hayden Breckenridge, M., additional, Sarkar, Biplab, additional, Haidet, Brian B., additional, Franke, Alexander, additional, Kohn, Erhard, additional, Collazo, Ramon, additional, and Sitar, Zlatko, additional

Published
2018
Full Text
View/download PDF

12. Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition.

Author

Reddy, Pramod, Washiyama, Shun, Mecouch, Will, Hernandez-Balderrama, Luis H., Kaess, Felix, Hayden Breckenridge, M., Sarkar, Biplab, Haidet, Brian B., Franke, Alexander, Kohn, Erhard, Collazo, Ramon, and Sitar, Zlatko

Subjects
CHEMICAL vapor deposition, DIELECTRICS, ARTIFICIAL intelligence, FERMI level, GALVANIC isolation
Abstract

In this work, the authors characterized the interface of plasma enhanced chemical vapor deposition (PECVD) dielectrics, SiO2 and SiNx with AlGaN as a function of Al composition. SiO2 is found to exhibit type I straddled band alignment with positive conduction and valence band offsets for all Al compositions. However, the interface Fermi level is found to be pinned within the bandgap, indicating a significant density of interface states. Hence, SiO2 is found to be suitable for insulating layers or electrical isolation on AlGaN with breakdown fields between 4.5 and 6.5 MV cm−1, but an additional passivating interlayer between SiO2 and AlGaN is necessary for passivation on Al-rich AlGaN. In contrast, Si-rich PECVD SiNx is found to exhibit type II staggered band alignment with positive conduction band offsets and negative valence band offsets for Al compositions <40% and type I straddled band alignment with negative conduction and valence band offsets for Al compositions >40% and is, hence, found to be unsuitable for insulating layers or electrical isolation on Al-rich AlGaN in general. In contrast to passivating stoichiometric LPCVD Si3N4, no evidence for interface state reduction by depositing SiNx on AlGaN is observed. [ABSTRACT FROM AUTHOR]

Published
2018
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results