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3. R&D Project NextTec - Next Generation High Throughput Production Processes & Inline Characterization for Si Solar Cells

Author

Clement, Florian, Meßmer, Marius, Höffler, Hannes, Ourinson, Daniel, Goraya, Baljeet Singh, Emanuel, Gernot, Meyer, Fabian, Lorenz, Andreas, Bartsch, Jonas, Demant, Matthias, Nold, Sebastian, Wolf, Andreas, Zimmer, Martin, Preu, Ralf, Ramspeck, Klaus, Hemsendorf, Marc, Straub, Benedikt, Ebert, Christan, Drews, Matthias, Joos, Wolfgang, Schmid, Elina, Schönfelder, Stephan, and Koepge, Ringo

Subjects
manufacturing and processing, silicon solar cell
Abstract

Within the NextTec project, a German consortium of equipment and metrology manufacturers as well as R&D institutes successfully developed the next generation of high-throughput processes and equipment for gigawatt-scale Si solar cell production. The project goal was the development of technical concepts (proof of concept) for the realization of an increase in throughput by a factor of 2 to 3 compared to currently used industrial production technology, ideally with an equivalent equipment footprint and only moderately increased equipment costs. Consequently, system throughputs of up 15,000-20,000 wafers per hour are addressed. Based on these values, a production capacity of approximately 1 GW per system and year can be achieved.

Published
2022
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4. On retrograde phosphorus concentration depth profiles in silicon after POCl3 diffusion and thermal oxidation

Author

Horzel, Jörg, Mack, Sebastian, Meßmer, Marius, Schmidt, Stefan, Richter, Susanne, Wolf, Andreas, Schön, Jonas, and Rentsch, Jochen

Abstract

Thermal diffusion and oxidation processes are used in semiconductor and photovoltaic device manufacturing since decades and are to a large extent understood. However, a closer look reveals that not all aspects are well explained in literature. We observe for POCl3 diffused surfaces (drive-in at 860 °C) on wafers with different surface morphology (textured vs. non-textured) and crystal orientation ( vs. ) after subsequent dry thermal oxidation systematically a retrograde phosphorus P concentration profile in the first surface-near 10-20 nm. The retrograde part of the profiles is in contradiction to the pile-up of phosphorus on the Si side of the Si/SiO2 interface that is described in literature [1, 2] to be the consequence of the respective segregation coefficients. The observation is not a measurement artefact but the result of the thermal oxidation process. ECV and SIMS measurements have been cross checked with four-point probe sheet resistance measurements. In addition, SENTAURUS simulations have been performed to back up the observation. We conclude that the observations should result in new models for thermal processing (diffusion and oxidation) that might impact future solar cell process optimization.

Published
2022
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5. Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing.

Author

Maus, Stephan, Mack, Sebastian, Schön, Jonas, Meßmer, Marius, Wolf, Andreas, and Paul, Oliver

Subjects
SOLAR cell manufacturing, PHOTOVOLTAIC power systems, CHARGE carriers, SILICON, SOLAR cells, OXYGEN
Abstract

Oxygen precipitates are among the most detrimental oxygen‐related silicon bulk defects formed during solar cell manufacturing. These defects are formed only during high‐temperature processes, impeding an identification of prone materials during incoming inspection. Moreover, the prediction of oxygen‐precipitate‐related bulk charge carrier recombination currently requires advanced numerical simulation. This work presents an easily implementable model to predict the bulk carrier lifetime limit, using the temperature–time profile of a high‐temperature process as well as the material properties as the input data. In addition to published analytical descriptions of oxygen precipitation, an empirical description of the retarded growth of small precipitates is included. Furthermore, the time‐lag in nucleation is explicitly considered, which is, to our knowledge, not implemented in oxygen precipitation modeling so far. The calibration of the two free parameters of the model is achieved using the experimental data of 19 different thermal process combinations performed using a single material. This results in a good agreement not only for the material used for calibration but also for other silicon materials. A validation based on passivated emitter and rear cells as well as on test structures confirms the ability of the model to predict bulk carrier lifetimes after solar cell processing. [ABSTRACT FROM AUTHOR]

Published
2023
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6. On retrograde phosphorus concentration depth profiles in silicon after POCl3 diffusion and thermal oxidation.

Author

Horzel, Jörg, Mack, Sebastian, Meßmer, Marius, Schmidt, Stefan, Richter, Susanne, Wolf, Andreas, Schön, Jonas, and Rentsch, Jochen

Subjects
DEPTH profiling, SEMICONDUCTOR devices, CRYSTAL orientation, PHOSPHORUS, SOLAR cells, SURFACE morphology, SILICON
Abstract

Thermal diffusion and oxidation processes are used in semiconductor and photovoltaic device manufacturing since decades and are to a large extent understood. However, a closer look reveals that not all aspects are well explained in literature. We observe for POCl3 diffused surfaces (drive-in at 860 °C) on wafers with different surface morphology (textured vs. non-textured) and crystal orientation (<100> vs. <111>) after subsequent dry thermal oxidation systematically a retrograde phosphorus P concentration profile in the first surface-near 10-20 nm. The retrograde part of the profiles is in contradiction to the pile-up of phosphorus on the Si side of the Si/SiO2 interface that is described in literature [1, 2] to be the consequence of the respective segregation coefficients. The observation is not a measurement artefact but the result of the thermal oxidation process. ECV and SIMS measurements have been cross checked with four-point probe sheet resistance measurements. In addition, SENTAURUS simulations have been performed to back up the observation. We conclude that the observations should result in new models for thermal processing (diffusion and oxidation) that might impact future solar cell process optimization. [ABSTRACT FROM AUTHOR]

Published
2022
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9. Increasing the throughput of industrial PERC production.

Author

Meßmer, Marius, Wolf, Andreas, Zimmer, Martin, Meyer, Fabian, Hoppe, Georg, Lorenz, Andreas, Tepner, Sebastian, Ourinson, Daniel, Emanuel, Gernot, Nold, Sebastian, Goraya, Baljeet, and Clement, Florian

Subjects
EMITTER-coupled logic circuits, SOLAR cells, LASERS, PHOTOVOLTAIC cells, PHOTOVOLTAIC power generation
Abstract

The development of new ways of increasing the production throughput for passivated emitter and rear cells (PERCs), as the major solar cell technology in the global market, is an area of great interest to the PV community. This paper presents approaches for significantly increasing the throughput of PERC production processes. The main focus is on the tube furnace processes for the emitter formation and oxidation, with the introduction of the High Temperature Stack Oxidation (HiTSOx) approach. Additional approaches that are currently under investigation at Fraunhofer ISE for increasing the throughput for wet-chemical, printing and laser processes will also be briefly outlined. [ABSTRACT FROM AUTHOR]

Published
2021

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