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107 results on '"McGovern, I.T."'

12. Liquid phase production of graphene by exfoliation of graphite in surfactant/water solutions

Author

Lotya, Mustafa, Hernandez, Yenny, King, Paul J., Smith, Ronan J., Nicolosi, Valeria, Karlsson, Lisa S., Blighe, Fiona M., De, Sukanta, Zhiming Wang, McGovern, I.T., Duesberg, Georg S., and Coleman, Jonathan N.

Subjects
Graphite -- Chemical properties, Infrared spectroscopy -- Usage, Oxidation-reduction reaction -- Analysis, Raman spectroscopy -- Usage, Surface active agents -- Chemical properties, Surface active agents -- Optical properties, Chemistry
Abstract

A method is described for dispersing and exfoliating graphite to give graphene suspended in water-surfactant solutions and the optical characterization of these suspensions has allowed the partial optimization of the dispersion process. Raman and infrared (IR) spectroscopic analysis of the films has shown the flakes to be largely free of defects and oxides, although X-ray photoelectron spectroscopy has shown the presence of a small oxide population.

Published
2009

13. Electronic and optical properties of magnesium phthalocyanine (MgPc) solid films studied by soft X-ray Excited Optical Luminescence and X-ray absorption spectroscopies

Author

Peltekis, N., Holland, B.N., Krishnamurthy, S., McGovern, I.T., Poolton, N.R.J., Patel, S., and McGuinness, C.

Subjects
Luminescence -- Evaluation, Magnesium compounds -- Structure, Magnesium compounds -- Optical properties, Magnesium compounds -- Chemical properties, Phthalocyanins -- Chemical properties, Phthalocyanins -- Optical properties, X-ray spectroscopy -- Usage, Chemistry
Abstract

X-ray Excited Optical Luminescence (XEOL) is used to explore the optical transitions in films of MgPc and is assigned to luminescence centers. Wavelength-specific photoluminescence yield method (PLY) absorption spectra obtained at the N K edge has shown a role for [sigma]* states participating in the luminescence process through the [sigma]-like lone pair of bridging nitrogen atom.

Published
2008

15. Synchrotron radiation studies of inorganic–organic semiconductor interfaces

Author

Cabailh, Gregory, Evans, D.A., Steiner, H.J., Vearey-Roberts, A. R., Bushell, A., O'Brien, S., Wells, J.W, McGovern, I.T., Dhanak, Vinod R., Kampen, Thorsten, Zahn, D.R.T, Batchelor, D., School of Physics. Trinity College of Dublin, Aberystwyth University, and Chemnitz University of Technology / Technische Universität Chemnitz

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2003

16. The Science Case for 4GLS

Author

Allan, R.J., Allen, M.P., Alexandrov, A.S., Ashfold, M.N.R., Atkinson, R., Avaldi, L., Bain, C.D., Bancroft, J., Barrett, S.D., Barron, L.D., Bayliss, S., Becker, U., Benning, L.G., Berrah, N., Binns, C., Bisby, R.H., Bizau, J.M., Blake, R.J., Bowler, M.A., Bowyer, J., Brettle, J., Briggs, D., Brown, L.M., Brown, W.A., Burke, P.G., Cacho, C., Carter, R., Catlow, R., Cernik, R.J., Chesters, M., Clark, S.A., Clarke, D.T., Clarke, J.A., Codling, K., Cogdell, R., Connaughton, D., Connerade, J.P., Costello, J.T., Crapper, M.D., Creaser, C., Currell, F.J., Davies, P.B., de Jong, M., Dessent, C., Dhanak, V.R., Dobson, D.M., Dobson, P.J., Doig, A.J., Donovan, R.J., Dumas, P., Dunn, K., Dutuit, O., Dyke, J.M., Eastham, D.A., Egdell, R.G., Eland, J.H.D., Emerson, D.R., Eriksson, M., Erman, P., Evans, A., Evans, H., Evans, S., Field, T., Fielding, H., Fisher, A., Flavell, W.R., Ford, R., Frasinski, L.J., Freeman, N., Galayda, J.N., Gardner, P., Garside, J., Gay, N.J., Gejo, T., George, M., Gray, M.D., Greenshaw, T.J., Greig, D., Halsall, M.P., Hamilton, B., Harrison, N.M., Hasnain, S.S., Hatherly, P.A., Heathcote, P., Helliwell, J.R., Henderson, C.M.B, Hepburn, J., Hill, J., Hirst, G., Hirst, J.D., Holland, D.M.P., Horn, A.B., Horton, P., Hunt, M.R.C., Hutchinson, H., Inglesfield, J.E., Ivanov, V.K., Johnson, C.A.F., Johnson, L.N., Jones, D., Jones, F.H., Jones, G.R., Jones, L., Kadodwala, M., Karlsson, L., Kennedy, E.T., King, G.C., King, M.R.F., Kirkman, I.W., Kleese, K., Knight, P.L., Kylstra, N., Larkins, F.P., Latimer, C., Lawley, K.P., Leggett, G.J., Lewis, R.A., Lindsey, K., Lu, J.R., Lyng, F.M., Macdonald, M.A., Malins, A., Marangos, J.P., Margaritondo, G., Marsi, M., Marston, G., Martin, S.R., Martin-Fernandez, M.L., Mason, N.J., Matthew, J.A.D., McCoustra, M.R.S., McGilp, J., McGovern, I.T., McGrath, R., Meldrum, R.A., Meyer, M., Millar, T.J., Mitchell, D., Møller, S.P., Molster, F.J., Moriarty, P., Morin, P., Munro, I.H., Murdin, B.N., Nahon, L., Newell, W.R., Noble, C.J., Nordgren, E.J., Norman, P.R., O'Brien, P., O'Neill, P., O'Shea, P., Owen, H., Pain, R., Papiz, M., Parker, A., Parker, J., Parr, A., Pattrick, R., Pemble, M.E., Picardo, M., Pidgeon, C.R., Pinheiro, T.J.T., Poliakoff, E.D., Poole, M.W., Potts, A., Potvliege, R., Powis, I., Price, S.D., Quinn, F.M., Radford, S., Rachlew-Källne, E., Raval, R., Read, F.H., Reddish, T.J., Ridley, P.A., Roberts, G., Russell, A.E., Ryan, A.J., Sapelkin, A., Sato, S., Schneider, A., Seddon, E.A., Shaw, E.A., Shen, T., Sherwood, P., Šiller, L., Smith, A.D., Smith, D.A., Smith, I., Smith, S.L., Snowdon, K., Softley, T.P., Sokell, E., Southworth, S.H., Srivistava, G.P., Stankiewicz, M., Sule-Suso, J., Sutherland, J.C., Surman, M., Svensson, S., Taylor, A.O., Temmerman, W.M., Thomas, A., Tiddy, G.J., Tobin, M., Towns-Andrews, Elizabeth, Towrie, M., Truscott, G., Tuckett, R.P., Turner, Tracy, Twigg, M.V., Vagdama, P., van der Hart, H.W., Volk, M., Vrakkring, M.J.J., Walker, I.C., Wander, A., Wasserman, S.P., Watanabe, M., Weightman, P., Welton, T., West, J.B., Wharton, C.W., Whitehead, J.C., Williams, G.P., Winick, H., Withnall, R., Woodruff, D.P., and Zayats, A.

Subjects
Q1
Published
2001

21. Structural determination for H2O adsorption on Si(001)2 × 1 using scanned-energy mode photoelectron diffraction

Author

Franco, N., primary, Chrost, J., additional, Avila, J., additional, Asensio, M.C., additional, Müller, C., additional, Dudzik, E., additional, Patchett, A.J., additional, McGovern, I.T., additional, Giebel, T., additional, Lindsay, R., additional, Fritzsche, V., additional, Bradshaw, A.M., additional, and Woodruff, D.P., additional

Published
1998
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27. Preface

Author

Woodruff, D.P., primary, Holloway, S., additional, and McGovern, I.T., additional

Published
1994
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29. The adsorption of H2S on InP (110) and GaP (110)

Author

Dudzik, E., primary, Whittle, R., additional, Müller, C., additional, McGovern, I.T., additional, Nowak, C., additional, Märkl, A., additional, Hempelmann, A., additional, Zahn, D.R.T., additional, Cafolla, A., additional, and Braun, W., additional

Published
1994
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38. A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sxand S2Cl2

Author

Gnoth, D.N., Wolfframm, D., Patchett, A., Hohenecker, S., Zahn, D.R.T., Leslie, A., McGovern, I.T., and Evans, D.A.

Abstract

Soft X-ray photoelectron spectroscopy has been applied to compare the effect of two S-passivating etchants (S2Cl2and (NH4)2Sx) on the (001) surfaces of GaAs and InP. Detailed analysis of substrate and adsorbate core level emission peaks reveal the similar nature of SIIIV bonding in each case. Prior to in-situ annealing, the semiconductor surface is covered by an amorphous layer, and above around 400°C, a stable S-terminated surface is obtained in each case. Variations in the relative intensities of spectral features are more sensitive to process and temperature differences than to the etchants used. For S-terminated GaAs and InP surfaces, a high binding energy component is observed in the substrate Ga 3d and In 4d core level emission spectra corresponding to surface SGa(In) bonding. The S 2p core level spectra contain two components related to the surface and sub-surface S atoms. AsS bonding on the annealed GaAsS surface is not present above 400°C.

Published
1998
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39. Soft X-ray photoemission spectroscopy of chemical reactivity at metal-GaSe interfaces

Author

McGovern, I.T., McGilp, J.F., Hughes, G.J., McKinley, A., Williams, R.H., and Norman, D.

Abstract

The interaction of seven metals with the basal surface of layered solid gallium selenide has been studied by soft X-ray photoemission spectroscopy using synchrotron radiation. The resultant interfaces can be classified as reactive and non-reactive, giving a correlation between interface reactivity and non-Schottky interfacial barrier formation. The suitability of bulk thermodynamic data as a guide to interface reactivity is discussed and it is argued that such schemes should include alloying as a possible reaction path. The spectrum of reactivity observed in the SXPS data is accommodated within a general model of metal-gallium selenide interaction and the use of secondary adlayers to elucidate the nature of metal-semiconductor interfaces is discussed.

Published
1983
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