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Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices., Comment: The following article has been submitted to the Journal of Applied Physics

Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in developing robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on the anion sites in perovskite oxyfluoride SrMnO2.5-dFg films grown on different substrates. Under compressive strain, F tends to take the apical-like sites, which was revealed by F and O K-edge linearly polarized x-ray absorption spectroscopy and density functional theory calculations, resulting in an enhanced c-axis expansion. Under tensile strain, F tends to take the equatorial-like sites, enabling the longer Mn-F bonds to lie within the plane. The anion ordered oxyfluoride films exhibit a significant orbital polarization of the 3d electrons, distinct F-site dependence to their valence band density of states, and an enhanced resistivity when F occupies the apical-like anion site compared to the equatorial-like site. By demonstrating a general strategy for inducing anion-site order in oxyfluoride perovskites, this work lays the foundation for future materials design and synthesis efforts that leverage this greater degree of atomic control to realize new polar or quasi-two-dimensional materials.

Non-collinear, multi-q spin textures can give rise to exotic, topologically protected spin structures such as skyrmions, but the reason for their formation over simple single-q structures is not well understood. While lattice frustration and the Dzyaloshinskii-Moriya interaction are known to produce non-collinear spin textures, the role of electron itinerancy in multi-q formation is much less studied. Here we investigated the non-collinear, helical spin structures in epitaxial films of the perovskite oxides SrFeO3 and CaFeO3 using magnetotransport and resonant soft x-ray magnetic diffraction. Metallic SrFeO3 exhibits features in its magnetoresistance that are consistent with its recently proposed multi-q structure. Additionally, the magnetic Bragg peak of SrFeO3 measured at the Fe L edge resonance energy asymmetrically broadens with decreasing temperature in its multi-q state. In contrast, insulating CaFeO3 has a symmetric scattering peak with an intensity 10x weaker than SrFeO3. Enhanced magnetic scattering at O K edge prepeak energies demonstrates the role of a negative charge transfer energy and the resulting oxygen ligand holes in the magnetic ordering of these ferrates. By measuring magnetic diffraction of CaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3 helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6 unit cell-thick layers. We conclude that insulating CaFeO3 supports only a simple single-q helical structure in contrast to metallic SrFeO3 that hosts multi-q structures. Our results provide important insight into the role of electron itinerancy in the formation of multi-q spin structures.

Manipulating the orbital occupation of valence electrons via epitaxial strain in an effort to induce new functional properties requires considerations of how changes in the local bonding environment affect the band structure at the Fermi level. Using synchrotron radiation to measure the x-ray linear dichroism of epitaxially strained films of the correlated oxide CaFeO3, we demonstrate that the orbital polarization of the Fe valence electrons is opposite from conventional understanding. Although the energetic ordering of the Fe 3d orbitals is confirmed by multiplet ligand field theory analysis to be consistent with previously reported strain-induced behavior, we find that the nominally higher energy orbital is more populated than the lower. We ascribe this inverted orbital polarization to an anisotropic bandwidth response to strain in a compound with nearly filled bands. These findings provide an important counterexample to the traditional understanding of strain-induced orbital polarization and reveal a new method to engineer otherwise unachievable orbital occupations in correlated oxides.

We report the synthesis of SrMnO$_{3-{\delta}}$F$_{{\gamma}}$ perovskite oxyfluoride thin films using a vapor transport method to fluorinate as-grown SrMnO$_{2.5}$ epitaxial thin films. The influence of the fluoropolymer, which acts as a fluorine vapor source, was investigated by utilizing polyvinyl fluoride (PVF), polyvinylidene difluoride (PVDF) and polytetrafluoroethylene (PTFE) in the reaction. The same process was carried out with polyethylene (PE) to isolate the role of carbon in the vapor transport process. The F distribution was probed by X-ray photoemission spectroscopy, which confirmed the incorporation of F into the films and revealed higher F concentrations in films exposed to PVF and PVDF compared to PTFE. The c-axis parameter expands after fluorination, a result consistent with density functional theory calculations that attribute the volume expansion to elongated Mn-F bonds compared to shorter Mn-O bonds. Using X-ray absorption spectroscopy, we show that the fluorination process reduces the nominal Mn oxidation state suggesting that F substitutes on O sites in the lattice as opposed to filling anion vacancy sites, a finding further supported by calculated formation energies of different F site occupancies. These results provide new insights into topochemical fluorination of perovskite oxides, which should enable future synthesis and design efforts focused on oxyfluoride heterostructures., Comment: to appear in Physical Review Materials

We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates., Comment: Minor typographic changes made