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237 results on '"Maximov, M.V."'

5. Performance of InGaAs/GaAs Microdisk Lasers with Improved Thermal Resistance

Author

Kryzhanovskaya, N.V., primary, Dragunova, A.S., additional, Fominykh, N.A., additional, Maximov, M.V., additional, Moiseev, E.I., additional, Zubov, F.I., additional, Ivanov, K.A., additional, Makhov, I.S., additional, Mozharov, A.M., additional, Kaluzhnyy, N.N., additional, Mintairov, S.A., additional, Guseva, Yu.A., additional, Gordeev, N.Yu., additional, and Zhukov, A.E., additional

Published
2022
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6. Optical loss and noise modelling in microdisk lasers with InGaAs quantum well-dots

Author

Zhukov, A.E., primary, Moiseev, E.I., additional, Nadtochiy, A.M., additional, Fominykh, N.A., additional, Ivanov, K.A., additional, Makhov, I.S., additional, Dragunova, A.S., additional, Kryzhanovskaya, N.V., additional, Zubov, F.I., additional, Maximov, M.V., additional, Mintairov, S.A., additional, Kalyuzhnyy, Nikolay A., additional, Shernyakov, Yu. M., additional, and Gordeev, N. Yu., additional

Published
2022
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8. Relationship between wavelength and gain in lasers based on quantum wells, dots, and well-dots

Author

null Maximov M.V., null Kalyuzhnyy N.A., null Mintairov S.A., null Payusov A.S., null Beckman A.A., null Shernyakov Yu.M., null Gordeev N.Yu., and null Kornyshov G.O

Abstract

A systematic study of a series of InGaAs/GaAs lasers in the 1-1.3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots. Keywords: semiconductor laser, quantum well, quantum dots, quantum well-dots, optical gain.

Published
2022

13. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Author

Maximov, M.V., Asryan, L.V., Shernayakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Zh.I., Ledenstov, N.N., and Bimberg, D.

Subjects
Lasers -- Research, Quantum electrodynamics -- Research, Quantum wells -- Research, Semiconductors -- Junctions, Business, Computers, Electronics, Electronics and electrical industries
Abstract

Research is presented concerning the theoretical and experimental investigation of the gain spectra and electoluminescence of injection lasers. The sensitivity of the quantum dot-array parameters is discussed.

Published
2001

29. Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

Author

Sokolovskii, G.S., Dudelev, V.V., Kolykhalova, E.D., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Viktorov, E.A., Erneux, T., Witzigmann, Bernd, Osiński, Marek, Henneberger, Fritz, and Arakawa, Yasuhiko

Abstract

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

Published
2015

30. Slow passage through thresholds in quantum dot lasers

Author

Viktorov, E.A., Erneux, T., Kolykhalova, E.D., Dudelev, V.V., Danckaert, J., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Sokolovskii, G.S., Viktorov, E.A., Erneux, T., Kolykhalova, E.D., Dudelev, V.V., Danckaert, J., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., and Sokolovskii, G.S.

Abstract

A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the turn-on times is measured as a function of the pump rate of change and reveals no clear power law. This has motivated a detailed analysis of rate equations appropriate for two-state lasing QD lasers. We find that the effective time of the GS turn on follows an -1/2 power law provided that the rate of change is not too small. The effective time of the ES transition follows an -1 power law, but its first order correction in ln is numerically significant. The two turn ons result from different physical mechanisms. The delay of the GS transition strongly depends on the slow growth of the dot population, whereas the ES transition only depends on the time needed to leave a repellent steady state.

Published
2016

32. Dropout dynamics in pulsed quantum dot lasers due to mode jumping

Author

Sokolovskii, G.S., Viktorov, E.A., Abusaa, M., Danckaert, J., Dudelev, V.V., Kolykhalova, E.D., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Erneux, T., Sokolovskii, G.S., Viktorov, E.A., Abusaa, M., Danckaert, J., Dudelev, V.V., Kolykhalova, E.D., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., and Erneux, T.

Abstract

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.

Published
2015

33. Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

Author

Witzigmann, Bernd, Osiński, Marek, Henneberger, Fritz, Arakawa, Yasuhiko, Sokolovskii, G.S., Dudelev, V.V., Kolykhalova, E.D., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Viktorov, E.A., Erneux, T., Witzigmann, Bernd, Osiński, Marek, Henneberger, Fritz, Arakawa, Yasuhiko, Sokolovskii, G.S., Dudelev, V.V., Kolykhalova, E.D., Soboleva, K.K., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Viktorov, E.A., and Erneux, T.

Abstract

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

Published
2015

34. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

Author

Kryzhanovskaya, N.V. Zhukov, A.E. Nadtochy, A.M. Maximov, M.V. Moiseev, E.I. Kulagina, M.M. Savelev, A.V. Arakcheeva, E.M. Lipovskii, A.A. Zubov, F.I. Kapsalis, A. Mesaritakis, C. Syvridis, D. Mintairov, A. Livshits, D.

Abstract

Microring cavities (diameter D = 2.7-7 μm) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter D = 6 μm. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of D = 2.7 μm. © 2013 Pleiades Publishing, Ltd.

Published
2013

39. The effect of slow passage in the pulse-pumped quantum dot laser

Author

Panajotov, Krassimir, Sciamanna, Marc, Valle, Angel, Michalzik, Rainer, Sokolovskii, G.S., Abu Saa, M., Danckaert, J., Dudelev, V.V., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Viktorov, E.A., Erneux, T., Panajotov, Krassimir, Sciamanna, Marc, Valle, Angel, Michalzik, Rainer, Sokolovskii, G.S., Abu Saa, M., Danckaert, J., Dudelev, V.V., Deryagin, A.G., Novikov, I.I., Maximov, M.V., Zhukov, A.E., Ustinov, V.M., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U., Viktorov, E.A., and Erneux, T.

Abstract

In recent years, quantum-dot (QD) semiconductor lasers attract significant interest in many practical applications due to their advantages such as high-power pulse generation because to the high gain efficiency. In this work, the pulse shape of an electrically pumped QD-laser under high current is analyzed. We find that the slow rise time of the pulsed pump may significantly affect the high intensity output pulse. It results in sharp power dropouts and deformation of the pulse profile. We address the effect to dynamical change of the phase-amplitude coupling in the proximity of the excited state (ES) threshold. Under 30ns pulse pumping, the output pulse shape strongly depends on pumping amplitude. At lower currents, which correspond to lasing in the ground state (GS), the pulse shape mimics that of the pump pulse. However, at higher currents the pulse shape becomes progressively unstable. The instability is greatest when in proximity to the secondary threshold which corresponds to the beginning of the ES lasing. After the slow rise stage, the output power sharply drops out. It is followed by a long-time power-off stage and large-scale amplitude fluctuations. We explain these observations by the dynamical change of the alpha-factor in the QD-laser and reveal the role of the slowly rising pumping processes in the pulse shaping and power dropouts at higher currents. The modeling is in very good agreement with the experimental observations.

Published
2014

40. High-power continuous-wave operations of a InGaAs/AlGaAs quantum dot laser.

Author

Maximov, M.V., Shernyakov, Yu M., Tsatsul'nikov, A.F., Lunev, A.V., Sakharov, A.V., Ustinov, V.M., Egorov, A. Yu., Zhukov, A.E., Kovsh, A.R., Kop'ev, P.S., Asryan, L.V., Alferov, Zh. I., Ledentsov, N.N., Bimberg, D., Kosogov, A.O., and Werner, P.

Subjects
*LASERS, *SCIENTIFIC experimentation
Abstract

Provides information on an experiment which illustrated a 1 W continuous-wave laser operations via the ground state of vertically coupled InGaAs quantum dots (VCQDs) in an AlGaAs matrix. Methodology used to conduct the experiment; Stability of the quantum dot (QD) laser with respect to high-temperature annealing; Modal gain spectra for the laser structure as a function of driving current; Results of the experiment.

Published
1998
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41. Control of emission spectra in quantum dot microdisk/microring lasers

Author

Kryzhanovskaya, N.V., primary, Mukhin, I.S., additional, Moiseev, E.I., additional, Shostak, I.I., additional, Bogdanov, A.A., additional, Nadtochiy, A.M., additional, Maximov, M.V., additional, Zhukov, A.E., additional, Kulagina, M.M., additional, Vashanova, K.A., additional, Zadiranov, Yu.M., additional, Troshkov, S.I., additional, Lipovskii, A.A., additional, and Mintairov, A., additional

Published
2014
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43. Dynamical interplay between ground and excited states in quantum dot laser

Author

Sokolovskii, G.S., primary, Dudelev, V.V., additional, Kolykhalova, E.D., additional, Deryagin, A.G., additional, Bakoz, A., additional, Novikov, I.I., additional, Maximov, M.V., additional, Zhukov, A.E., additional, Ustinov, V.M., additional, Kuchinskii, V.I., additional, Sibbett, W., additional, Rafailov, E.U., additional, Viktorov, E.A., additional, and Erneux, T., additional

Published
2014
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44. Influece of active region and resonator design on characteristics of microdisk lasers

Author

Kryzhanovskaya, N.V., primary, Maximov, M.V., additional, Nadtochiy, A.M., additional, Zhukov, A.E., additional, Moiseev, E.I., additional, Shostak, I.I., additional, Savel'ev, A.V., additional, Lipovskii, A.A., additional, Karpov, D.V., additional, Kulagina, M.M., additional, Vashanova, K.A., additional, Laukkanen, J., additional, and Tommila, J., additional

Published
2014
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50. Vertical-Cavity Surface-Emitting Lasers Based on Submonolayer InGaAs Quantum Dots

Author

Blokhin, S.A., primary, Maleev, N.A., additional, Kuzmenkov, A.G., additional, Sakharov, A.V., additional, Kulagina, M.M., additional, Shernyakov, Y.M., additional, Novikov, I.I., additional, Maximov, M.V., additional, Ustinov, V.M., additional, Kovsh, A.R., additional, Mikhrin, S.S., additional, Ledentsov, N.N., additional, Lin, G., additional, and Chi, J.Y., additional

Published
2006
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