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Your search keyword '"Matveev, B. A."' showing total 404 results
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404 results on '"Matveev, B. A."'

1. Self-cooling in reverse biased p-InAsSbP/n-InAs0.9Sb0.1 heterostructures.

Author

Karandashev, S. A., Lavrov, A. A., Lukhmyrina, T. S., Matveev, B. A., and Remennyi, M. A.

Abstract

2D thermal radiation distribution together with I–V and L–I characteristics has been measured and analyzed in forward and reverse biased p–n heterostructures based on InAs0.9Sb0.1 and grown onto n-InAs substrates. The measurements revealed a sufficient difference in the temperature distribution onto the sample surface at forward and reverse bias, which is explained by an impact of heat pump operation initiated by an electron–phonon interaction at the p–n junction and diode contacts at U < 0. [ABSTRACT FROM AUTHOR]

Published
2024
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13. Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution.

Author

Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. S., Matveev, B. A., Remennyy, M. A., and Usikova, A. A.

Subjects
SOLID solutions, PHOTODETECTORS, PHOTODIODES, DIODES, SEMICONDUCTORS
Abstract

Photodetectors based on diode heterostracture with InAsSbx photosensitive region (x = 0.38) with long-wave cut-off λ0.1 about 10 μm (296 K) are investigated. The dependences of dark current density and detectivity in the temperature range of 200–425 K have been investigated. It is shown that the experimental samples are characterized by values of dark current density about 500 A/cm2 at room temperature, detectivity 1.2 × 109 and 5 × 109 cm Hz1/2 W–1 at room temperature and 250 K, respectively, and diffusion mechanism of current flow in the temperature range 200–350 K. [ABSTRACT FROM AUTHOR]

Published
2024
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35. On-chip ATR sensor (λ = 3.4 μm) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions

Author

null Usikova A. A., null Remennyi M. A., null Matveev B. A., null Lukhmyrina T. S., null Klimov A. A., and null Karandashev S. A.

Abstract

We discuss photoelectrical properties of an on-chip attenuated total reflection (ATR) sensor for the ethanol concentration measurements in an aqueous solution. The on-chip sensor/microchip was made from a p-InAsSbP/n-InAs monolithic double heterostructure with three mesas/individual diodes grown on a single n+-InAs substrate/waveguide. Two heterostructure diodes were used as photodiodes, while the third one - as a LED. The ethanol concentration was measured via an algorithm based on analysis of the I-V characteristic parameters of a photodiode and the L-I characteristics of the LED. Keywords: photodiodes in the mid-IR range, LEDs in the mid-IR range, on-chip sensor, optical sensors, ATR sensor.

Published
2022

36. Photonic and electrical output signal components in optical sensors based on p-InAsSbP/n-InAs(Sb) monolithic heterostructures

Author

null Sotnikova G.Yu., null Matveev B. A., null Kapralov A. A., and null Gavrilov G.A.

Abstract

Monolithic optical sensors based on low shunt resistance p-InAsSbP/n-InAs and p-InAsSbP/n-InAsSb heterostructures grown onto low-resistivity n-InAs substrates equipped with transimpedance amplifiers suffer from output electrical signal distortions. The paper presents analysis of the above distortions and an equivalent circuit for output electrical signal analysis and measurements, as well as recommendations for suppression of interference of signal components has been suggested. Keywords: optical sensors, ATR sensors, optopairs, p-InAsSbP/n-InAs(Sb) heterostructures

Published
2022

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