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The 4H-silicon carbide (SiC) shows the capability to host a large number of promising emitters for quantum technology. However, due to its high refractive index, the collection of photoluminescence emission is compromised for further applications. Here, we demonstrate a scalable approach of manufacturing solid-immersion lenses (SILs) on 4H-silicon carbide (SiC). The fluorescence collection efficiency of single quantum emitters under the SILs shows 3.4 times enhancement confirmed by confocal microscopy of individual colour centers, RK acknowledges financial support by DFG (Grant No. KO4999/3-1). RK and JW acknowledge financial support by the EUvia SMeL and QIA as well as the DFG via FOR 2724. The research leading to these results has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 820391(SQUARE).

Narrow-band filtering of light is widely used in optical spectroscopy. Atomic filters, which rely on the Faraday effect, allow for GHz-wide transmission spectra, which are intrinsically matched to an atomic transition. We present an experimental realization and a theoretical study of a Faraday filter based on cesium and its D1-line-transition ( $6^{2}S_{1/2}\rightarrow 6^{2}P_{1/2}$ ) around 894 nm. We also present the prospects and visions for combining this filter with the single photon emission of a single quantum dot, which matches with the atomic transition. The option to lock the spectral position of a quantum dot is discussed at the end of this letter.

Quantum sensors are keeping the cutting-edge sensitivities in metrology. However, for high-sensitive measurements of arbitrary signals, limitations in linear dynamic range could introduce distortions when sensing the frequency, magnitude and phase of unknown signals. Here, we overcome these limitations with advanced sensing protocol that combines quantum phase-sensitive detection with heterodyne readout. We present theoretical and experimental investigations using nitrogen-vacancy centers in diamond, showing the ability to sense radio signals with a 98 dB linear dynamic range, a 31 pT/Hz$^{1/2}$ sensitivity, and arbitrary frequency resolution. Further, we perform the quantum-assisted distortion-free audio signal (melody, speech) sensing with high fidelity. The methods developed here could broaden the horizon for quantum sensors towards applications in telecommunication, where high-fidelity and low-distortion at multiple frequency bands within small sensing volumes are required., Comment: 30 pages, 7 figures

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing application complexity requires entangling multiple individual systems, e.g. via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centres in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of $\approx 0.43\,\rm \mu m^{-3}$. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction limited excitation spots, for which we introduce simplified schemes for generation of computationally-relevant Greenberger-Horne-Zeilinger (GHZ) and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications., Comment: 7 pages, 4 figures

In current long-distance communications, classical information carried by large numbers of particles is intrinsically robust to some transmission losses but can, therefore, be eavesdropped without notice. On the other hand, quantum communications can provide provable privacy and could make use of entanglement swapping via quantum repeaters to mitigate transmission losses. To this end, considerable effort has been spent over the last few decades toward developing quantum repeaters that combine long-lived quantum memories with a source of indistinguishable single photons. Multiple candidate optical spin qubits in the solid state, including quantum dots, rare-earth ions, and color centers in diamond and silicon carbide (SiC), have been developed. In this perspective, we give a brief overview on recent advances in developing optically active spin qubits in SiC and discuss challenges in applications for quantum repeaters and possible solutions. In view of the development of different material platforms, the perspective of SiC spin qubits in scalable quantum networks is discussed. Funding Agencies|Swedish Research CouncilSwedish Research Council [VR 2016-04068, VR 2016-05362]; Swedish Energy AgencySwedish Energy Agency [43611-1]; EUEuropean Union (EU) [862721]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]; BMBF via Q.Link.XFederal Ministry of Education & Research (BMBF); AFOSRUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-15-1-0029, FA9550-19-1-0358]; DARPAUnited States Department of DefenseDefense Advanced Research Projects Agency (DARPA) [D18AC00015KK1932]; ONROffice of Naval Research [N00014-17-1-3026]; EUEuropean Union (EU)

4H–silicon carbide (SiC) shows the capability of hosting a large number of promising emitters for quantum technology. However, due to its high refractive index, the collection of photoluminescence emission is compromised for further applications. Here, we demonstrate a scalable approach of manufacturing solid-immersion lenses (SILs) on 4H–SiC. The procedure results in SILs with high effective NA. The fluorescence collection efficiency of single quantum emitters under the SILs shows 3.4 times enhancement confirmed by confocal microscopy of individual V 2 .

Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems ( Awschalom et al. Nat. Photonics 2018 , 12 , 516 - 527 ; Atature et al. Nat. Rev. Mater. 2018 , 3 , 38 - 51 ). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (VSi) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single VSi centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing VSi centers and concluded that there are about 16 photons involved in the laser writing VSi center process. Our results represent a powerful tool in the fabrication of single VSi centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4A2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins., Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices., The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.

Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

Hybrid quantum systems are based on the capability to interface elements from complementary fields: only the best properties from all components are utilized, overcoming the limitation of each field. Semiconductor quantum dots (QDs) are well established as sources of bright, pure and highly indistinguishable on-demand single photons. A crucial limitation is given by the relatively short coherence time. This can be overtaken by interfacing them to alkali atoms, which display a very long coherence time and will benefit from the superior properties of QD-based non-classical light sources [1].

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1,400 nm diameters. We obtain high collection efficiency, up to 22 kcounts/s optical saturation rates from a single silicon vacancy center, while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits., Comment: 18 pages, 8 figures

A Faraday filter is used to simultaneously allow the transmission of the Mollow triplet sidebands which are resonant with the Cs-D1 clock transition. The Mollow triplet is generated from a resonantly-excited quantum dot.

Motivated by the inconclusive results of three small-angle neutron scattering experiments on nonionic surfactants adsorbed in nanoporous silica, we determine the structure of the surfactant aggregates by computer simulations and provide a deeper understanding of the self-assembly mechanism. The experiments showed that surfactants adsorbed into the nanometer-sized cylindrical pores of SBA-15 self-assemble into aggregates that are far smaller than bulk aggregates. Their morphology has been assumed to depend on the hydrophilicity of the pores. Because of the limited resolution of the scattering experiments, a detailed analysis of the morphological changes was not feasible. Here we show that our mesoscale simulations reproduce the experimental findings and also allow us to study the subtle interplay between aggregation and adsorption. We find that increased adsorption in more hydrophilic pores leads to an increase in the effective area required by the surfactant head groups and consequently to a decrease in a...

Hybrid quantum systems integrating semiconductor quantum dots (QDs) and atomic vapours become important building blocks for scalable quantum networks due to the complementary strengths of individual parts. QDs provide on-demand single-photon emission with near-unity indistinguishability comprising unprecedented brightness—while atomic vapour systems provide ultra-precise frequency standards and promise long coherence times for the storage of qubits. Spectral filtering is one of the key components for the successful link between QD photons and atoms. Here we present a tailored Faraday anomalous dispersion optical filter based on the caesium-D1 transition for interfacing it with a resonantly pumped QD. The presented Faraday filter enables a narrow-bandwidth (Δω=2π × 1 GHz) simultaneous filtering of both Mollow triplet sidebands. This result opens the way to use QDs as sources of single as well as cascaded photons in photonic quantum networks aligned to the primary frequency standard of the caesium clock transition. Hybrid quantum systems combine efficient high-quality quantum dot sources with atomic vapours that can serve as precise frequency standards or quantum memories. Here, Portalupi et al. demonstrate an optimized atomic Cs-Faraday filter working with single photons emitted from a semiconductor quantum dot.

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S = 3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multifrequency spin excitation. Our work suggests that the silicon vacancy in an industry-friendly platform, SiC, has the potential for various magnetometry applications under ambient conditions. Funding Agencies|ERA.Net RUS Plus Program (DIABASE); DFG via priority programme [1601]; EU via ERC Grant SQUTEC; Max Planck Society; Knut and Alice Wallenberg Foundation; KAKENHI [26286047]; EU via ERC Grant Diadems

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of $^{13}{\rm C}$ ($p_{\rm{C}}=1.1\%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300~\rm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in $^{13}{\rm C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing., 6 pages, 6 figures

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has a large bandgap with deep defects and benefits from mature fabrication techniques. Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the electron spin in this example is essential for readout it usually limits nuclear spin coherence. This has set of the quest for defects with spin-free ground states. Here, we isolate a hitherto unidentified defect in diamond and use it at room temperature to demonstrate optical spin polarization and readout with exceptionally high contrast (up to 45%), coherent manipulation of an individual excited triplet state spin, and coherent nuclear spin manipulation using the triplet electron spin as a meta-stable ancilla. By this we demonstrate nuclear magnetic resonance and Rabi oscillations of the uncoupled nuclear spin in the spin-free electronic ground state. Our study demonstrates that nuclei coupled to single metastable electron spins are useful quantum systems with long memory times despite electronic relaxation processes., 4 pages, 5 figures

The detection of single molecules has facilitated many advances in life- and material-sciences. Commonly, it founds on the fluorescence detection of single molecules, which are for example attached to the structures under study. For fluorescence microscopy and sensing the crucial parameters are the collection and detection efficiency, such that photons can be discriminated with low background from a labeled sample. Here we show a scheme for filtering the excitation light in the optical detection of single stranded labeled DNA molecules. We use the narrow-band filtering properties of a hot atomic vapor to filter the excitation light from the emitted fluorescence of a single emitter. The choice of atomic sodium allows for the use of fluorescent dyes, which are common in life-science. This scheme enables efficient photon detection, and a statistical analysis proves an enhancement of the optical signal of more than 15% in a confocal and in a wide-field configuration., Comment: 9 pages, 5 figures

Nitrogen vacancy (NV) centers in diamond have developed into a powerful solid-state platform for compact quantum sensors. However, high sensitivity measurements usually come with additional constraints on the pumping intensity of the laser and the pulse control applied. Here, we demonstrate high sensitivity NV ensemble based magnetic field measurements with low-intensity optical excitation. DC magnetometry methods like, e.g., continuous-wave optically detected magnetic resonance and continuously excited Ramsey measurements combined with lock-in detection, are compared to get an optimization. Gradiometry is also investigated as a step towards unshielded measurements of unknown gradients. The magnetometer demonstrates a minimum detectable field of 0.3-0.7 pT in a 73 s measurement by further applying a flux guide with a sensing dimension of 2 mm, corresponding to a magnetic field sensitivity of 2.6-6 pT/Hz^0.5. Combined with our previous efforts on the diamond AC magnetometry, the diamond magnetometer is promising to perform wide bandwidth magnetometry with picotesla sensitivity and a cubic-millimeter sensing volume under ambient conditions., Comment: 20 pages, 12 figures