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301 results on '"Matsuda, Tokiyoshi"'

2. Spike-Timing-Dependent Plasticity Device with Ga-Sn-O Conductance Change Layer Deposited by Mist-CVD Method.

Author

Kita, Hidehito, Uno, Kazuma, Matsuda, Tokiyoshi, Kawanishi, Hidenori, and Kimura, Mutsumi

Subjects
THIN films
Abstract

A spike-timing-dependent plasticity (STDP) device with a Ga-Sn-O (GTO) conductance change layer deposited by a mist-CVD method has been developed. First, the memristive characteristic is analyzed. Next, based on it, spike waveforms are determined. Finally, the STDP characteristic is successfully confirmed. This is an original report on the realization of an STDP characteristic using a thin film deposited by the mist-CVD method, which is achieved by the GTO properties and a well-designed clear methodology to realize a STDP characteristic from a memristive characteristic. [ABSTRACT FROM AUTHOR]

Published
2024
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4. Neuro-inspired System with Crossbar Array of Amorphous Metal-Oxide-Semiconductor Thin-Film Devices as Self-plastic Synapse Units : Letter Recognition of Five Alphabets

Author

Kimura, Mutsumi, Umeda, Kenta, Ikushima, Keisuke, Hori, Toshimasa, Tanaka, Ryo, Matsuda, Tokiyoshi, Kameda, Tomoya, Nakashima, Yasuhiko, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Woeginger, Gerhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Gedeon, Tom, editor, Wong, Kok Wai, editor, and Lee, Minho, editor

Published
2019
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6. Improvement of Memristive Characteristic of In-Ga-Zn-O Thin-Film Memristor by Conductive Buffer Layers

Author

Nakaso, Tsuguyoshi, Matsuda, Tokiyoshi, Kawanishi, Hidenori, and Kimura, Mutsumi

Abstract

A memristive characteristic of an In-Ga-Zn-O (IGZO) thin-film memristor (TFM) has been improved by conductive buffer layers. The IGZO TFM is actually fabricated by inserting the conductive buffer layers between the conductance change film and electrode films, which is made by the difference in the flow rates of the sputtering gas. The device structure is quite simple, namely, the IGZO film is sandwiched between the top and bottom electrodes, and the change in the flow rate is acquired simply by regulating the gas valve. The switching ratio has been improved significantly, because the top and bottom conductive buffer layers act as pseudo-electrode films and hide the Schottky barrier and unfavorable influences, such as current decrease due to the formation of metal-oxide insulator and so on. The candidate constituents for the current path are determined to be H-, and it is suggested that multiple conductive filaments are generated. The proposed method is expected to be effective to improve the memristive characteristics also for various kinds of TFMs.

Published
2024
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7. Hopfield Neural Network with Double-Layer Amorphous Metal-Oxide Semiconductor Thin-Film Devices as Crosspoint-Type Synapse Elements and Working Confirmation of Letter Recognition

Author

Kimura, Mutsumi, Umeda, Kenta, Ikushima, Keisuke, Hori, Toshimasa, Tanaka, Ryo, Matsuda, Tokiyoshi, Kameda, Tomoya, Nakashima, Yasuhiko, Hutchison, David, Series Editor, Kanade, Takeo, Series Editor, Kittler, Josef, Series Editor, Kleinberg, Jon M., Series Editor, Mattern, Friedemann, Series Editor, Mitchell, John C., Series Editor, Naor, Moni, Series Editor, Pandu Rangan, C., Series Editor, Steffen, Bernhard, Series Editor, Terzopoulos, Demetri, Series Editor, Tygar, Doug, Series Editor, Weikum, Gerhard, Series Editor, Cheng, Long, editor, Leung, Andrew Chi Sing, editor, and Ozawa, Seiichi, editor

Published
2018
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8. Analog Memcapacitor by Ferroelectric Capacitor and Its Application to Spiking Neuromorphic System

Author

Ishisaki, Yuma, Oshio, Reon, Kuwahara, Takumi, Shintani, Michihiro, Tokumitsu, Eisuke, Matsuda, Tokiyoshi, Kawanishi, Hidenori, Nakashima, Yasuhiko, and Kimura, Mutsumi

Abstract

An analog memcapacitor has been created by a ferroelectric capacitor. Since the memcapacitor is a capacitor, the power consumption is not dissipated at all in principle. The device structure is that a ferroelectric layer is sandwiched between the bottom electrode and the top electrode. The analog memcapacitor characteristic is realized, namely, varying Vmax is applied, and the capacitance is strongly dependent on it. The working principle can be explained by the operating point analysis for the intrinsic property of the ferroelectric layer. If the memcapacitors are implemented in neuromorphic systems, it is expected that the power consumption will be remarkably reduced. It has been simulated that the spiking neuromorphic system dissipates only 6.24 nJ/Inference for MNIST inference with acceptable accuracy, which is much lower than other systems.

Published
2024
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10. Simplification of Processing Elements in Cellular Neural Networks : Working Confirmation Using Circuit Simulation

Author

Kimura, Mutsumi, Nakamura, Nao, Yokoyama, Tomoharu, Matsuda, Tokiyoshi, Kameda, Tomoya, Nakashima, Yasuhiko, Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Weikum, Gerhard, Series editor, Hirose, Akira, editor, Ozawa, Seiichi, editor, Doya, Kenji, editor, Ikeda, Kazushi, editor, Lee, Minho, editor, and Liu, Derong, editor

Published
2016
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11. Novel Architecture for Cellular Neural Network Suitable for High-Density Integration of Electron Devices-Learning of Multiple Logics

Author

Kimura, Mutsumi, Fujita, Yusuke, Kasakawa, Tomohiro, Matsuda, Tokiyoshi, Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Weikum, Gerhard, Series editor, Arik, Sabri, editor, Huang, Tingwen, editor, Lai, Weng Kin, editor, and Liu, Qingshan, editor

Published
2015
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27. Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs

Author

Hirao, Takashi, Furuta, Mamoru, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Chaoyang Li, Furuta, Hiroshi, Hokari, Hitoshi, Yoshida, Motohiko, Ishii, Hiromitsu, and Kakegawa, Masayuki

Subjects
Liquid crystal displays -- Research, Thin film devices -- Structure, Thin film devices -- Spectra, Thin film devices -- Electric properties, LCD display, Business, Electronics, Electronics and electrical industries
Abstract

The development of high-performance bottom-gate thin-film transistors (TFTs) with transparent zinc oxide (ZnO) channels is reported. The dry etching of the ZnO film in an Ar and C[H.sub.4] chemistry is developed to achieve a ZnO TFT back-plane for liquid-crystal display (LCD) with the required pattern accuracy.

Published
2008

38. Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

Author

Kamada, Yudai, Fujita, Shizuo, Kimura, Mutsumi, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Mamoru, Hirao, Takashi, Kamada, Yudai, Fujita, Shizuo, Kimura, Mutsumi, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Mamoru, and Hirao, Takashi

Abstract

We investigated effects of chemical stoichiometry of ZnO channel, controlled by oxygen partial pressure during deposition, on bias instability for ZnO thin-film transistors. Parallel threshold voltage shifts were mainly enhanced under gate bias stresses due to charge trapping when O-rich ZnO was used for channel layer. On the contrary, negative threshold voltage shifts were observed under both gate and drain bias stresses when Zn-rich ZnO was used for channel layer. This degradation was enhanced regardless of the bias polarity and the direction, attributing to electrically activated trap generations.

Published
2019

39. Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation

Author

Kimura, Mutsumi, Kamada, Yudai, Fujita, Shizuo, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Mamoru, Hirao, Takashi, Kimura, Mutsumi, Kamada, Yudai, Fujita, Shizuo, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Mamoru, and Hirao, Takashi

Abstract

We analyzed the photoleakage current (Ileak) in ZnO thin-film transistors using device simulation. The dependences of Ileak on the location of light irradiation and drain voltage are reproduced by considering a Schottky barrier at the source contact using a two-dimensional device simulation. First, carrier generation is induced by light irradiation, the generated holes accumulate near the source contact, and some of these are captured in the donor traps. Next, the Schottky barrier becomes narrow, and electron injection increases via a tunneling effect. This discussion also suggests that the off-current is exceedingly low because the Schottky barrier prevents electron injection.

Published
2019

40. Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

Author

Furuta, Mamoru, Kamada, Yudai, Kimura, Mutsumi, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Hiroshi, Li, Chaoyang, Fujita, Shizuo, Hirao, Takashi, Furuta, Mamoru, Kamada, Yudai, Kimura, Mutsumi, Hiramatsu, Takahiro, Matsuda, Tokiyoshi, Furuta, Hiroshi, Li, Chaoyang, Fujita, Shizuo, and Hirao, Takashi

Abstract

The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2) below a critical pressure. Thermal desorption spectroscopy study revealed that the donorlike traps were generated when the ZnO film changed from O- to Zn-rich condition. The Zn-related native defects would be a possible origin of the donorlike traps generated at intermediate energy levels in the ZnO TFTs.

Published
2019

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