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12. Fetal topographical anatomy of the female urethra and descending vagina: a histological study of the early human fetal urethra

Author

Masumoto, Hiroshi, Rodríguez Vázquez, José Francisco, Verdugo López, Samuel, Murakami, Gen, Matsubara, Akio, Masumoto, Hiroshi, Rodríguez Vázquez, José Francisco, Verdugo López, Samuel, Murakami, Gen, and Matsubara, Akio

Abstract

Background: Which parts of the male urethra correspond to the female urethra? To resolve this question, we need to understand fetal topographical changes in the urethra, its external sphincter and vagina. The vagina joins the mid-course of the primitive urethra and, later "descends" to the vaginal vestibulum. Methods: We examined histological sections of 14 female and 4 male mid-term fetuses. Results: The inferior end of the vagina was consistently embedded in the posterior wall of the urethra at 9-12 weeks. The supero-inferior level of the vaginal merging was lower in larger fetuses. Thus, the sequential variation in levels appeared to reflect the process of vaginal descent. However, in spite of penetration of the vaginal end into the posterior urethral wall, we found no sign of destruction of the urethral wall after vaginal descent in the low-merging types. Before vaginal descent, the female external sphincter extended posterolaterally around the urethra. Conclusion: The vaginal descent is classically regarded as a relative topographical change, but it is likely to be a result of elongation of the proximal urethra in the superior side of the vaginal merging. Conversely, the distal urethra is likely to be incorporated into the vaginal vestibulum by 15 weeks. During these processes, most of the female external sphincter seems to be expelled from the original anterior position into the vestibular wall as the urethrovaginal sphincter. The adult female urethra seems to correspond to the male prostatic urethra superior to the prostatic colliculus., Depto. de Anatomía y Embriología, Fac. de Medicina, TRUE, pub

Published
2024

14. The Ty1 retrotransposon harbors a DNA region that performs dual functions as both a gene silencing and chromatin insulator.

Author

Masumoto, Hiroshi, Muto, Hideki, Yano, Koichi, Kurosaki, Yohei, and Niki, Hironori

Subjects
*CHROMATIN, *DNA, *GENETIC transcription, *GENE silencing, *HETEROCHROMATIN, *DNA repair
Abstract

In various eukaryotic kingdoms, long terminal repeat (LTR) retrotransposons repress transcription by infiltrating heterochromatin generated within their elements. In contrast, the budding yeast LTR retrotransposon Ty1 does not itself undergo transcriptional repression, although it is capable of repressing the transcription of the inserted genes within it. In this study, we identified a DNA region within Ty1 that exerts its silencing effect via sequence orientation. We identified a DNA region within the Ty1 group-specific antigen (GAG) gene that causes gene silencing, termed GAG silencing (GAGsi), in which the silent chromatin in the GAGsi region is created by euchromatin-specific histone modifications. A characteristic inverted repeat (IR) sequence is present at the 5' end of this region, forming a chromatin boundary between promoter-specific chromatin upstream of the IR sequence and silent chromatin downstream of the IR sequence. In addition, Esc2 and Rad57, which are involved in DNA repair, were required for GAGsi silencing. Finally, the chromatin boundary was required for the transcription of Ty1 itself. Thus, the GAGsi sequence contributes to the creation of a chromatin environment that promotes Ty1 transcription. [ABSTRACT FROM AUTHOR]

Published
2024
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36. Data from Systematic Analysis of Compounds Specifically Targeting Telomeres and Telomerase for Clinical Implications in Cancer Therapy

Author

Lee, Hee-Sheung, primary, Carmena, Mar, primary, Liskovykh, Mikhail, primary, Peat, Emma, primary, Kim, Jung-Hyun, primary, Oshimura, Mitsuo, primary, Masumoto, Hiroshi, primary, Teulade-Fichou, Marie-Paule, primary, Pommier, Yves, primary, Earnshaw, William C., primary, Larionov, Vladimir, primary, and Kouprina, Natalay, primary

Published
2023
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37. Supplementary Data from Systematic Analysis of Compounds Specifically Targeting Telomeres and Telomerase for Clinical Implications in Cancer Therapy

Author

Lee, Hee-Sheung, primary, Carmena, Mar, primary, Liskovykh, Mikhail, primary, Peat, Emma, primary, Kim, Jung-Hyun, primary, Oshimura, Mitsuo, primary, Masumoto, Hiroshi, primary, Teulade-Fichou, Marie-Paule, primary, Pommier, Yves, primary, Earnshaw, William C., primary, Larionov, Vladimir, primary, and Kouprina, Natalay, primary

Published
2023
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44. Large magnetodielectric effect based on spin-dependent charge transfer in metal–insulator type Co-(BaF2) nanogranular films.

Author

Kijima-Aoki, Hanae, Cao, Yang, Kobayashi, Nobukiyo, Takahashi, Saburo, Ohnuma, Shigehiro, and Masumoto, Hiroshi

Subjects
BARIUM fluoride, CHARGE transfer, MAGNETOELECTRIC effect, MAGNETIC traps, MAGNETICS, MAGNETIC moments, DIELECTRIC films
Abstract

Cobalt-metal-fluoride nanogranular films exhibit high electrical resistivity (ρ) and high permittivity (ɛ′) as well as high magnetic moments, making them potentially suitable for applications in low power magnetoelectronic devices at a high-frequency range. Here, we present the DC/AC magnetoelectric effect of high-ρ Cox-(BaF2)1 − x nanogranular films that are constituted of Co nanogranules of about 2 nm in diameter in an insulating BaF2 crystal. Under the application of magnetic field (H), we observed the ρ variations (Δρ/ρ0) of 2.0%–5.9% for x ranging 0.19–0.54 and the ɛ′ variations (Δɛ/ ε 0 ′ ) of 0.7%–6.0% for x ranging 0.19–0.42, respectively. These magnetically controllable ρ and ɛ′ are realized based on the spin-dependent quantum-mechanical charge transfer. The Cox-(BaF2)1 − x film for x = 0.42 possesses high ρ, while remaining in a notably high Δɛ/ ε 0 ′ of 6% at a megahertz frequency range. This study demonstrates a candidate of high-resistive magnetoelectric nanogranular films, which may bring prosperous applications in high-frequency magnetoelectric devices with low power consumption. [ABSTRACT FROM AUTHOR]

Published
2020
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