Search

Single impurities in insulators are now often used for quantum sensors and single photon sources, while nanoscale semiconductor doping features are being constructed for electrical contacts in quantum technology devices, implying that new methods for sensitive, non‐destructive imaging of single‐ or few‐atom structures are needed. X‐ray fluorescence (XRF) can provide nanoscale imaging with chemical specificity, and features comprising as few as 100 000 atoms have been detected without any need for specialized or destructive sample preparation. Presently, the ultimate limits of sensitivity of XRF are unknown – here, gallium dopants in silicon are investigated using a high brilliance, synchrotron source collimated to a small spot. It is demonstrated that with a single‐pixel integration time of 1 s, the sensitivity is sufficient to identify a single isolated feature of only 3000 Ga impurities (a mass of just 350 zg). With increased integration (25 s), 650 impurities can be detected. The results are quantified using a calibration sample consisting of precisely controlled numbers of implanted atoms in nanometer‐sized structures. The results show that such features can now be mapped quantitatively when calibration samples are used, and suggest that, in the near future, planned upgrades to XRF facilities might achieve single‐atom sensitivity. [ABSTRACT FROM AUTHOR]

We report a facile, solvent-free surfactant-dependent mechanochemical synthesis of highly luminescent CsPbBr3 nanocrystals (NCs) and study their scintillation properties. A small amount of surfactant oleylamine (OAM) plays an important role in the two-step ball milling method to control the size and emission properties of the NCs. The solid-state synthesized perovskite NCs exhibit a high photoluminescence quantum yield (PLQY) of up to 88% with excellent stability. CsPbBr3 NCs capped with different amounts of surfactant were dispersed in toluene and mixed with polymethyl methacrylate (PMMA) polymer and cast into scintillator discs. With increasing concentration of OAM during synthesis, the PL yield of CsPbBr3/PMMA nanocomposite was increased, which is attributed to reduced NC aggregation and PL quenching. We also varied the perovskite loading concentration in the nanocomposite and studied the resulting emission properties. The most intense PL emission was observed from the 2% perovskite-loaded disc, while the 10% loaded disc exhibited the highest radioluminescence (RL) emission from 50 kV X-rays. The strong RL yield may be attributed to the deep penetration of X-rays into the composite, combined with the large interaction cross-section of the X-rays with the high-Z atoms within the NCs. The nanocomposite disc shows an intense RL emission peak centered at 536 nm and a fast RL decay time of 29.4 ns. Further, we have demonstrated the X-ray imaging performance of a 10% CsPbBr3 NC-loaded nanocomposite disc. [ABSTRACT FROM AUTHOR]

Curved X‐ray detectors have the potential to revolutionize diverse sectors due to benefits such as reduced image distortion and vignetting compared to their planar counterparts. While the use of inorganic semiconductors for curved detectors are restricted by their brittle nature, organic–inorganic hybrid semiconductors which incorporated bismuth oxide nanoparticles in an organic bulk heterojunction consisting of poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) and [6,6]‐phenyl C71 butyric acid methyl ester (PC70BM) are considered to be more promising in this regard. However, the influence of the P3HT molecular weight on the mechanical stability of curved, thick X‐ray detectors remains less well understood. Herein, high P3HT molecular weights (>40 kDa) are identified to allow increased intermolecular bonding and chain entanglements, resulting in X‐ray detectors that can be curved to a radius as low as 1.3 mm with low deviation in X‐ray response under 100 repeated bending cycles while maintaining an industry‐standard dark current of <1 pA mm−2 and a sensitivity of ≈ 0.17 μC Gy−1 cm−2. This study identifies a crucial missing link in the development of curved detectors, namely the importance of the molecular weight of the polymer semiconductors used. [ABSTRACT FROM AUTHOR]

Typically used semiconducting metal oxides (SMOs) consist of several varying factors that affect gas sensor response, including film thickness, grain size, and notably the grain–grain junctions within the active device volume, which complicates the analysis and optimisation of sensor response. In comparison, devices containing a single nanostructured element do not present grain–grain junctions, and therefore present an excellent platform to comprehend the correlation between nanostructure surface stoichiometry and sensor response to the depletion layer (Debye length, LD) variation after the analyte gas adsorption/chemisorption. In this work, nanofabricated devices containing SnO2 and Sn3O4 individual nanobelts of different thicknesses were used to estimate their LD after NO2 exposure. In the presence of 40 ppm of NO2 at 150 °C, LD of 12 nm and 8 nm were obtained for SnO2 and Sn3O4, respectively. These values were associated to the sensor signals measured using multiple nanobelts onto interdigitated electrodes, outlining that the higher sensor signal of the Sn4+ surface (up to 708 for 100 ppm NO2 at 150°) in comparison with the Sn2+ (up to 185) can be explained based on a less depleted initial state and a lower surface electron affinity caused by the Lewis acid/base interactions with oxygen species from the baseline gas. To support the proposed mechanisms, we investigated the gas sensor response of SnO2 nanobelts with a higher quantity of oxygen vacancies and correlated the results to the SnO system. [ABSTRACT FROM AUTHOR]

Organic‐inorganic hybrid semiconductors are an emerging class of materials for direct conversion X‐ray detection due to attractive characteristics such as high sensitivity and the potential to form conformal detectors. However, existing hybrid semiconductor X‐ray detectors display dark currents that are 1000–10 000× higher than industrially relevant values of 1–10 pA mm−2. Herein, ultra‐low dark currents of <10 pA mm−2, under electric fields as high as ≈4 V µm−1, for hybrid X‐ray detectors consisting of bismuth oxide nanoparticles (for enhanced X‐ray attenuation) incorporated into an organic bulk heterojunction consisting of p‐type Poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) and n‐type [6,6]‐Phenyl C71 butyric acid methyl ester (PC70BM) are reported. Such ultra‐low dark currents are realized through the enrichment of the hole selective p‐type organic semiconductor near the anode contact. The resulting detectors demonstrate broadband X‐ray response including an exceptionally high sensitivity of ≈1.5 mC Gy−1 cm−2 and <6% variation in angular dependence response under 6 MV hard X‐rays. The above characteristics in combination with excellent dose linearity, dose rate linearity, and reproducibility over a broad energy range enable these detectors to be developed for medical and industrial applications. [ABSTRACT FROM AUTHOR]

In this study, individual nanofabricated SnO micro-disks, previously shown to exhibit exceptional sensitivity to NOx, are investigated to further our understanding of gas sensing mechanisms. The SnO disks presenting different areas and thickness were isolated and electrically connected to metallic electrodes aided by a Dual Beam Microscope (SEM/FIB). While single micro-disk devices were found to exhibit short response and recovery times and low power consumption, large interconnected arrays of micro-disks exhibit much higher sensitivity and selectivity. The source of these differences is discussed based on the gas/solid interaction and transport mechanisms, which showed that thickness plays a major role during the gas sensing of single-devices. The calculated Debye length of the SnO disk in presence of NO2 is reported for the first time. [ABSTRACT FROM AUTHOR]

We report a facile, solvent-free surfactant-dependent mechanochemical synthesis of highly luminescent CsPbBr 3 nanocrystals (NCs) and study their scintillation properties. A small amount of surfactant oleylamine (OAM) plays an important role in the two-step ball milling method to control the size and emission properties of the NCs. The solid-state synthesized perovskite NCs exhibit a high photoluminescence quantum yield (PLQY) of up to 88% with excellent stability. CsPbBr 3 NCs capped with different amounts of surfactant were dispersed in toluene and mixed with polymethyl methacrylate (PMMA) polymer and cast into scintillator discs. With increasing concentration of OAM during synthesis, the PL yield of CsPbBr 3 /PMMA nanocomposite was increased, which is attributed to reduced NC aggregation and PL quenching. We also varied the perovskite loading concentration in the nanocomposite and studied the resulting emission properties. The most intense PL emission was observed from the 2% perovskite-loaded disc, while the 10% loaded disc exhibited the highest radioluminescence (RL) emission from 50 kV X-rays. The strong RL yield may be attributed to the deep penetration of X-rays into the composite, combined with the large interaction cross-section of the X-rays with the high-Z atoms within the NCs. The nanocomposite disc shows an intense RL emission peak centered at 536 nm and a fast RL decay time of 29.4 ns. Further, we have demonstrated the X-ray imaging performance of a 10% CsPbBr 3 NC-loaded nanocomposite disc., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

Typically used semiconducting metal oxides (SMOs) consist of several varying factors that affect gas sensor response, including film thickness, grain size, and notably the grain-grain junctions within the active device volume, which complicates the analysis and optimisation of sensor response. In comparison, devices containing a single nanostructured element do not present grain-grain junctions, and therefore present an excellent platform to comprehend the correlation between nanostructure surface stoichiometry and sensor response to the depletion layer (Debye length, LD) variation after the analyte gas adsorption/chemisorption. In this work, nanofabricated devices containing SnO2 and Sn3O4 individual nanobelts of different thicknesses were used to estimate their LD after NO2 exposure. In the presence of 40 ppm of NO2 at 150 °C, LD of 12 nm and 8 nm were obtained for SnO2 and Sn3O4, respectively. These values were associated to the sensor signals measured using multiple nanobelts onto interdigitated electrodes, outlining that the higher sensor signal of the Sn4+ surface (up to 708 for 100 ppm NO2 at 150°) in comparison with the Sn2+ (up to 185) can be explained based on a less depleted initial state and a lower surface electron affinity caused by the Lewis acid/base interactions with oxygen species from the baseline gas. To support the proposed mechanisms, we investigated the gas sensor response of SnO2 nanobelts with a higher quantity of oxygen vacancies and correlated the results to the SnO system.