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Spin-wave resonance measurements were performed in the mixed magnetic phase regime of a Pd-doped FeRh epilayer that appears as the first-order ferromagnetic-antiferromagnetic phase transition takes place. It is seen that the measured value of the exchange stiffness is suppressed throughout the measurement range when compared to the expected value of the fully ferromagnetic regime, extracted via the independent means of a measurement of the Curie point, for only slight changes in the ferromagnetic volume fraction. This behavior is attributed to the influence of the antiferromagnetic phase: inspired by previous experiments that show ferromagnetism to be most persistent at the surfaces and interfaces of FeRh thin films, we modelled the antiferromagnetic phase as forming a thin layer in the middle of the epilayer through which the two ferromagnetic layers are coupled up to a certain critical thickness. The development of this exchange stiffness is then consistent with that expected from the development of an exchange coupling across the magnetic phase boundary, as a consequence of a thickness dependent phase transition taking place in the antiferromagnetic regions and is supported by complimentary computer simulations of atomistic spin-dynamics. The development of the Gilbert damping parameter extracted from the ferromagnetic resonance investigations is consistent with this picture., Comment: Main manuscript: 11 pages, 6 figures. Supplemental material: 2 pages, 1 figure

The antiferromagnetic to ferromagnetic phase transition in B2-ordered FeRh is imaged in laterally confined nanopatterned islands using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. The resulting magnetic images directly detail the progression in the shape and size of the FM phase domains during heating and cooling through the transition. In 5 um square islands this domain development during heating is shown to proceed in three distinct modes: nucleation, growth, and merging, each with subsequently greater energy costs. In 0.5 um islands, which are smaller than the typical final domain size, the growth mode is stunted and the transition temperature was found to be reduced by 20 K. The modification to the transition temperature is found by high resolution scanning transmission electron microscopy to be due to a 100 nm chemically disordered edge grain present as a result of ion implantation damage during the patterning. FeRh has unique possibilities for magnetic memory applications; the inevitable changes to its magnetic properties due to subtractive nanofabrication will need to be addressed in future work in order to progress from sheet films to suitable patterned devices.