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SiC polytypes have been studied for decades, both experimentally and with atomistic simulations, yet no consensus has been reached on the factors that determine their stability and growth. Proposed governing factors are temperature-dependent differences in the bulk energy, biaxial strain induced through point defects, and surface properties. In this work, we investigate the thermodynamic stability of the 3C, 2H, 4H, and 6H polytypes with density functional theory (DFT) calculations. The small differences of the bulk energies between the polytypes can lead to intricate changes in their energetic ordering depending on the computational method. Therefore, we employ and compare various DFT-codes: VASP, CP2K, and FHI-aims; exchange-correlation functionals: LDA, PBE, PBEsol, PW91, HSE06, SCAN, and RTPSS; and nine different van der Waals (vdW) corrections. At $T=0$~K, 4H-SiC is marginally more stable than 3C-SiC, and the stability further increases with temperature by including entropic effects from lattice vibrations. Neither the most advanced vdW corrections nor strain on the lattice have a significant effect on the relative polytype stability. We further investigate the energies of the (0001) polytype surfaces that are commonly exposed during epitaxial growth. For Si-terminated surfaces, we find 3C-SiC to be significantly more stable than 4H-SiC. We conclude that the difference in surface energy is likely the driving force for 3C-nucleation, whereas the difference in the bulk thermodynamic stability slightly favors the 4H and 6H polytypes. In order to describe the polytype stability during crystal growth correctly, it is thus crucial to take into account both of these effects., Comment: 14 pages, 12 figures

Strongly correlated quantum systems give rise to many exotic physical phenomena, including high-temperature superconductivity. Simulating these systems on quantum computers may avoid the prohibitively high computational cost incurred in classical approaches. However, systematic errors and decoherence effects presented in current quantum devices make it difficult to achieve this. Here, we simulate the dynamics of the one-dimensional Fermi-Hubbard model using 16 qubits on a digital superconducting quantum processor. We observe separations in the spreading velocities of charge and spin densities in the highly excited regime, a regime that is beyond the conventional quasiparticle picture. To minimize systematic errors, we introduce an accurate gate calibration procedure that is fast enough to capture temporal drifts of the gate parameters. We also employ a sequence of error-mitigation techniques to reduce decoherence effects and residual systematic errors. These procedures allow us to simulate the time evolution of the model faithfully despite having over 600 two-qubit gates in our circuits. Our experiment charts a path to practical quantum simulation of strongly correlated phenomena using available quantum devices., Comment: 20 pages, 15 figures

One of the most promising applications for near term quantum computers is the simulation of physical quantum systems, particularly many-electron systems in chemistry and condensed matter physics. In solid state physics, finding the correct symmetry broken ground state of an interacting electron system is one of the central challenges. The Variational Hamiltonian Ansatz (VHA), a variational hybrid quantum-classical algorithm especially suited for finding the ground state of a solid state system, will in general not prepare a broken symmetry state unless the initial state is chosen to exhibit the correct symmetry. In this work, we discuss three variations of the VHA designed to find the correct broken symmetry states close to a transition point between different orders. As a test case we use the two-dimensional Hubbard model where we break the symmetry explicitly by means of external fields coupling to the Hamiltonian and calculate the response to these fields. For the calculation we simulate a gate-based quantum computer and also consider the effects of dephasing noise on the algorithms. We find that two of the three algorithms are in good agreement with the exact solution for the considered parameter range. The third algorithm agrees with the exact solution only for a part of the parameter regime, but is more robust with respect to dephasing compared to the other two algorithms.