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Orbital angular momentum (OAM) and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics. Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices. Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. Instead, we find that the presence of an electric toroidal moment in a ferrorotational phase transfers measurable torque and OAM to a localized electron beam in the ballistic limit. We record these torque transfers from a high-energy electron beam using a momentum-resolved detector. This approach provides a high-sensitivity method to detect polarization fields and their more complex order parameters and topologies. In addition to toroidal order, we also demonstrate high-precision measurements of vorticity and chirality for polar vortexlike phases.

Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO3 thin films with nearly bulk-like properties. Thickness scaling provides access to the coercive voltages (

The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low-voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 (PMN-PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain-induced changes in the Fe0.5Rh0.5 mediated by voltages applied to the PMN-PT. We describe approaches to achieve high-quality, epitaxial growth of Fe0.5Rh0.5 on the PMN-PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin-film devices via studies of the anomalous Hall effect. By comparing the spin-flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10−8 s m−1 at 325 K while applying a −0.75 V bias.

The dynamics of polarization evolution and rotation in 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 relaxor ferroelectric thin films are studied via in operando synchrotron-based X-ray diffraction with AC electric fields. A frequency-limited suppression of polarization rotation was observed above ultrasonic frequencies (≳ 20 kHz). The nature of this suppression is informed by scanning transmission electron microscopy in the zero-field state, where a high density of nanoscale, low-angle domain walls was observed. In combination with switching dynamics studies, the results suggest that the suppression of polarization rotation at ultrasonic frequencies is due to the large activation field needed to move the domain walls when the polarization rotates between different monoclinic phases. These results are critical in understanding piezoelectric relaxation phenomena in relaxor ferroelectrics.

This article is written on behalf of a large number of colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What we present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world. Needless to say, to realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental condensed-matter physics and the actual manifestations of the physical concepts into real-life applications. We hope this article will help spur more translational research within the broad materials physics community.

Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO3)n/(SrTiO3)n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO3 and PbTiO3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field.

Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain-structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purpose, epitaxial thin films free of extended defects and secondary phases are urgently needed. Here, we used optimized growth parameters and target compositions to obtain epitaxial (40-45 nm) 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/(20 nm) SrRuO3 (PMN-33PT/SRO) heterostructures using pulsed-laser deposition (PLD) on singly terminated SrTiO3 (STO) and ReScO3 (RSO) substrates with Re = Dy, Tb, Gd, Sm, and Nd. In situ reflection high-energy electron diffraction (RHEED) and high-resolution X-ray diffraction (HR-XRD) analysis confirmed high-quality and single-phase thin films with smooth 2D surfaces. High-resolution scanning transmission electron microscopy (HR-STEM) revealed sharp interfaces and homogeneous strain further confirming the epitaxial cube-on-cube growth mode of the PMN-33PT/SRO heterostructures. The combined XRD reciprocal space maps (RSMs) and piezoresponse force microscopy (PFM) analysis revealed that the domain structure of the PMN-33PT heterostructures is sensitive to the applied compressive strain. From the RSM patterns, an evolution from a butterfly-shaped diffraction pattern for mildly strained PMN-33PT layers, which is evidence of stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains with a highly distorted tetragonal structure, is observed. The PFM amplitude and phase of the PMN-33PT thin films confirmed the relaxor-like for a strain state below ∼1.13%, while for higher compressive strain (∼1.9%) the irregularly shaped and poled ferroelectric domains were observed. Interestingly, the PFM phase hysteresis loops of the PMN-33PT heterostructures grown on the SSO substrates (strain state of ∼0.8%) exhibited an enhanced coercive field which is about two times larger than that of the thin films grown on GSO and NSO substrates. The obtained results show that epitaxial strain engineering could serve as an effective approach for tailoring and enhancing the functional properties in relaxor ferroelectrics.

Pyroelectrics are a material class that undergoes a change in polarization as the temperature of the system is varied. This effect can be utilized for applications ranging from thermal imaging and sensing to waste-heat energy conversion to thermally driven electron emission. Here, we review recent advances in the study and utilization of thin-film pyroelectrics. Leveraging advances in modeling, synthesis, and characterization has provided a pathway forward in one of the more poorly developed subfields of ferroelectricity. We introduce the complex physical phenomena of pyroelectricity, briefly explore the history of work in this space, and highlight not only new advances in the direct measurement of such effects but also how our ability to control thin-film materials is changing our understanding of this response. Finally, we discuss recent advances in thin-film pyroelectric devices and introduce a number of potentially new directions the field may follow in the coming years.

Topological structures in ferroic materials have drawn great interest in recent years due to the richness of the underlying physics and the potential for applications in next generation electronics. Recent advances in atomically precise thin-film materials synthesis and characterization of structural/physical phenomena at unprecedented length/energy/time scales have enabled us to study exotic phases and their associated physics [Rößler et al., Nature 442, 797 (2006); S. Das, Nature 568, 368 (2019); Yadav et al., Nature 530, 198 (2016); and Stoica et al., Nat. Mater. 18, 377 (2019)]. It is appropriate that, in the second century of ferroelectrics, some dramatic discoveries are propelling the field into directions heretofore unimaginable. In this review, we explore the recent progress in ferroelectric-oxide superlattices in which researchers can control structure and physical properties through the application of epitaxial strain, layer thickness, temperature, electric field, etc. We provide a discussion of exotic topological structures (e.g., closure domains, vortices, polar skyrmions, and other exotic phases) and associated functionalities in ferroelectric/paraelectric superlattices. We conclude with a brief overview of and prospects for how the field may evolve in the coming years.

Deterministic control of the intrinsic polarization state of ferroelectric thin films is essential for device applications. Independently of the well-established role of electrostatic boundary conditions and epitaxial strain, the importance of growth temperature as a tool to stabilize a target polarization state during thin film growth is shown here. Full control of the intrinsic polarization orientation of PbTiO3 thin films is demonstrated—from monodomain up, through polydomain, to monodomain down as imaged by piezoresponse force microscopy—using changes in the film growth temperature. X-ray diffraction and scanning transmission electron microscopy reveal a variation of c-axis related to out-of-plane strain gradients. These measurements, supported by Ginzburg–Landau–Devonshire free energy calculations and Rutherford backscattering spectroscopy, point to a defect mediated polarization gradient initiated by a temperature dependent effective built-in field during growth, allowing polarization control not only under specific growth conditions, but ex-situ, for subsequent processing and device applications.

The local compositional heterogeneity associated with the lack of long-range ordering of Mg2+and Nb5+in PbMg1/3Nb2/3O3(PMN) is correlated with its characteristic "relaxor" ferroelectric behavior. Earlier work [Shetty et al., Adv. Funct. Mater. 29, 1804258 (2019)] examined the relaxor behavior in PMN thin films grown at temperatures below 1073 K by artificially reducing the degree of disorder via synthesis of heterostructures with alternate layers of Pb(Mg2/3Nb1/3)O3and PbNbO3, as suggested by the "random-site model." This work confirmed the development of ferroelectric domains below 150 K in long-range-ordered films, epitaxially grown on (111) SrTiO3substrates using alternate target timed pulsed-laser deposition of Pb(Mg2/3Nb1/3)O3and PbNbO3targets with 20% excess Pb. In this work, the first through third-harmonic dielectric charge displacement densities and complex dielectric susceptibilities were analyzed as a function of temperature and frequency in zero-field-cooled PMN films with short- A nd long-range ordering. The long-range ordering decreased the dispersion in the first- A nd third-harmonic dielectric charge displacement densities relative to short-range-ordered films. It was found that the one-dimensional ordering achieved in the long-range-ordered film is insufficient to achieve a fully normal ferroelectric state. In the presence of quenched random electric fields, these films require a small ac field to facilitate percolation of the polar nano-regions, enabling normal ferroelectric-like behavior at lower temperature (T < 240 K). The films behave like a typical relaxor near room temperature. With reduced ordering, the short-range films exhibit greater dispersion in linear and higher order harmonic dielectric charge displacement density.

Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate the ferroelectric domains. PFM gives an insight into the strength of local piezoelectric coupling and polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units into units of effective piezoelectric constant remains a challenge, and insufficient methods are often used. While most quantification efforts have been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase, which is often arbitrarily adjusted to fit expectations. This is problematic when investigating materials with unknown or negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses, because assumptions about the PFM phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the effective electrostrictive coefficient probed by PFM. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data have not been correctly processed. Here, we explain the PFM amplitude quantification process and demonstrate a path to identify the phase offset required to extract correct meaning from the PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM amplitude and phase.

Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides are widely used as resistive switching materials in memristors. Interface-type memristors based on ferroelectric materials are emerging as alternatives in the development of high-performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/detrapping. Using semiconductor theories with consideration of polarization effects, a phenomenological theory is developed to explain the current–voltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects, and Schottky interface in controlling ferroelectric resistive switching and offer the guidance to design ferroelectric memristors with enhanced performance.

Recent advances in high-throughput computational workflows are expanding the realm of materials for a range of applications. Here, we report the experimental evaluation of two such predicted candidate ferroelectric perovskite oxides: BiAlO3 and BiInO3. Attempts were made to synthesize polar BiAlO3 and BiInO3 using pulsed-laser deposition. Despite exploring a wide range of temperatures, pressures, substrates, laser fluences, and so on, attempts to grow BiAlO3 with this approach resulted in no perovskite phase and decomposition to Bi2O3 and Bi24Al2O40. Various orientations of BiInO3 films were synthesized on multiple substrates, with the best crystallinity demonstrated for (200)-oriented films on MgO (001). Density-functional theory predicts two energetically competitive ground-state structures for BiInO3: Pnma (nonpolar) and Pna21 (polar). BiInO3 films were studied by using X-ray diffraction and second-harmonic generation (SHG) and found to exhibit the nonpolar Pnma structure. Temperature-dependent SHG and dielectric measurements revealed no transition to the polar structure. Optical transmission-absorption studies suggest a direct bandgap of ∼4.5 eV for BiInO3. Our study underscores the need for additional descriptors for synthesizability in assessing the potential of ferroelectric candidate materials identified from high-throughput materials databases.

With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of applied electric field, but switching can also be enacted by pressure and is influenced by strain fields, material composition, temperature, time,etc.Moreover, the parameters are usually interdependent, so that their decoupling toward univariate measurements or analysis may not be straightforward. On the other hand, both explicit and hidden parameters provide an opportunity to gain deeper insight into the measured properties, provided there exists a well-defined path to capture and analyze such data. Here, we introduce a new, two-dimensional approach to represent hysteretic response of a material system to applied electric field. Utilizing ferroelectric polarization as a model hysteretic property, we demonstrate how explicit consideration of electromechanical response to two rather than one control voltages enables significantly more transparent and robust interpretation of observed hysteresis, such as differentiating between charge trapping and ferroelectricity. Furthermore, we demonstrate how the new data representation readily fits into a variety of machine-learning methodologies, from unsupervised classification of the origins of hysteretic responsevialinear clustering algorithms to neural-network-based inference of the sample temperature based on the specific morphology of hysteresis.

The ability to produce atomically precise, artificial oxide heterostructures allows for the possibility of producing exotic phases and enhanced susceptibilities not found in parent materials. Typical ferroelectric materials either exhibit large saturation polarization away from a phase boundary or large dielectric susceptibility near a phase boundary. Both large ferroelectric polarization and dielectric permittivity are attained wherein fully epitaxial (PbZr0.8Ti0.2O3)n/(PbZr0.4Ti0.6O3)2n (n = 2, 4, 6, 8, 16 unit cells) superlattices are produced such that the overall film chemistry is at the morphotropic phase boundary, but constitutive layers are not. Long- (n ≥ 6) and short-period (n = 2) superlattices reveal large ferroelectric saturation polarization (Ps = 64 µC cm−2) and small dielectric permittivity (εr ≈ 400 at 10 kHz). Intermediate-period (n = 4) superlattices, however, exhibit both large ferroelectric saturation polarization (Ps = 64 µC cm−2) and dielectric permittivity (εr = 776 at 10 kHz). First-order reversal curve analysis reveals the presence of switching distributions for each parent layer and a third, interfacial layer wherein superlattice periodicity modulates the volume fraction of each switching distribution and thus the overall material response. This reveals that deterministic creation of artificial superlattices is an effective pathway for designing materials with enhanced responses to applied bias.

Large electromechanical effects in relaxor ferroelectrics are generally attributed to the collective response of an ensemble of correlated, nanometer-sized polar structures induced by chemical and charge disorder. Here, we study finite-size effects on such polar order (i.e., how it evolves when sample dimensions approach the polarization correlation length) in 7-70-nm-thick films of the relaxor ferroelectric PbSc0.5Ta0.5O3. Temperature-dependent polarization studies reveal a linear suppression of the polarization and nonlinearity associated with relaxor order as the film thickness decreases to ≈30 nm. Below this thickness, however, the suppression rapidly accelerates, and polarization is completely absent by film thicknesses of ≈7 nm, despite the continued observation of a broad peak in dielectric permittivity and frequency dispersion. Diffuse-scattering measurements reveal the diffuse-scattering symmetry, and analysis suggests the films have a polarization correlation length of ≈23 nm. Taken together, it is apparent that reduction of sample size and the resulting distribution of polar structures drive suppression and eventual quenching of the electrical response of relaxors, which may be attributed to increasing dipole-dipole and dipole-interface interactions.

Multiferroic BiFeO3 (BFO) shows several phonon modes at infrared (IR) to THz energies, which are expected to carry information on any sample property coupled to crystal lattice vibrations. While macroscopic IR studies of BFO are often limited by single-crystal size, scattering-type scanning near-field optical microscopy (s-SNOM) allows for IR thin film spectroscopy of nanoscopic probing volumes with negligible direct substrate contribution to the optical signal. In fact, polaritons such as phonon polaritons of BFO introduce a resonant tip-sample coupling in s-SNOM, leading to both stronger signals and enhanced sensitivity to local material properties. Here, we explore the near-field response of BFO thin films at three consecutive resonances (centered around 5 THz, 13 THz, and 16 THz), by combining s-SNOM with a free-electron laser. We study the dependence of these near-field resonances on both the wavelength and tip-sample distance. Enabled by the broad spectral range of the measurement, we probe phonon modes connected to the predominant motion of either the bismuth or oxygen ions. Therefore, we propose s-SNOM at multiple near-field resonances as a versatile and very sensitive tool for the simultaneous investigation of various sample properties.

Ferroelectrics and related materials (e.g., non-traditional ferroelectrics such as relaxors) have long been used in a range of applications, but with the advent of new ways of modeling, synthesizing, and characterizing these materials, continued access to astonishing breakthroughs in our fundamental understanding come each year. While we still rely on these materials in a range of applications, we continue to re-write what is possible to be done with them. In turn, assumptions that have underpinned the use and design of certain materials are progressively being revisited. This perspective aims to provide an overview of the field of ferroelectric/relaxor/polar-oxide thin films in recent years, with an emphasis on emergent structure and function enabled by advanced synthesis, processing, and computational modeling.

Harvesting waste heat for useful purposes is an essential component of improving the efficiency of primary energy utilization. Today, approaches such as pyroelectric energy conversion are receiving renewed interest for their ability to turn wasted energy back into useful energy. From this perspective, the need for these approaches, the basic mechanisms and processes underlying their operation, and the material and device requirements behind pyroelectric energy conversion are reviewed, and the potential for advances in this area is also discussed.

The ability to tailor a new crystalline structure and associated functionalities with a variety of stimuli is one of the key issues in material design. Developing synthetic routes to functional materials with partially absorbed nonmetallic elements (i.e., hydrogen and nitrogen) can open up more possibilities for preparing novel families of electronically active oxide compounds. Fast and reversible uptake and release of hydrogen in epitaxial ABO3 manganite films through an adapted low-frequency inductively coupled plasma technology is introduced. Compared with traditional dopants of metallic cations, the plasma-assisted hydrogen implantations not only produce reversibly structural transformations from pristine perovskite (PV) phase to a newly found protonation-driven brownmillerite one but also regulate remarkably different electronic properties driving the material from a ferromagnetic metal to a weakly ferromagnetic insulator for a range of manganite (La1−xSrxMnO3) thin films. Moreover, a reversible perovskite-brownmillerite-perovskite transition is achieved at a relatively low temperature (T ≤ 350 °C), enabling multifunctional modulations for integrated electronic systems. The fast, low-temperature control of structural and electronic properties by the facile hydrogenation/dehydrogenation treatment substantially widens the space for exploring new possibilities of novel properties in proton-based multifunctional materials.

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2-xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.

There is growing interest in the study of thin-film pyroelectric materials because of their potential for high performance thermal-energy conversion, thermal sensing, and beyond. Electrothermal susceptibilities, such as pyroelectricity, are known to be enhanced in proximity to polar instabilities, and this is conventionally accomplished by positioning the material close to a temperature-driven ferroelectric-to-paraelectric phase transition. The high Curie temperature (TC) for many ferroelectrics, however, limits the utility of these materials at room-temperature. Here, the nature of pyroelectric response in thin films of the widely studied multiferroic Bi1-xLaxFeO3 (x = 0-0.45) is probed. While BiFeO3 itself has a high TC, lanthanum substitution results in a chemically induced lowering of the ferroelectric-to-paraelectric and structural-phase transition. The effect of isovalent lanthanum substitution on the structural, dielectric, ferroelectric, and pyroelectric response is investigated using reciprocal-space-mapping studies; field-, frequency-, and temperature-dependent electrical measurements; and phase-sensitive pyroelectric measurements, respectively. While BiFeO3 itself has a rather small pyroelectric coefficient at room temperature (∼-40 μC/m2 K), 15% lanthanum substitution results in an enhancement of the pyroelectric coefficient by 100% which is found to arise from a systematic lowering of TC

We report the pulsed-laser deposition of epitaxial double-perovskite Bi2FeCrO6(BFCO) films on the (001)-, (110), and (111)-oriented single-crystal SrTiO3 substrates. All of the BFCO films with various orientations show the 1/2 1/2 1/2 and 3/2 3/2 3/2 superlattice-diffraction peaks. The intensity ratios between the 1/2 1/2 1/2-superlattice and the main 111-diffraction peak can be tailored by simply adjusting the laser repetition rate and substrate temperature, reaching up to 4.4%. However, both optical absorption spectra and magnetic measurements evidence that the strong superlattice peaks are not correlated with the B-site Fe3+/Cr3+ cation ordering. Instead, the epitaxial (111)-oriented Bi2FeCrO6 films show an enhanced remanent polarization of 92 μC/cm2 at 10 K, much larger than the predicted values by density-functional theory calculations. Positive-up-negative-down (PUND) measurements with a time interval of 10 μs further support these observations. Therefore, our experimental results reveal that the strong superlattice peaks may come from A- or B-site cation shifts along the pseudo-cubic [111] direction, which further enhance the ferroelectric polarization of the BFCO thin films.

Complex topological configurations are fertile ground for exploring emergent phenomena and exotic phases in condensed-matter physics. For example, the recent discovery of polarization vortices and their associated complex-phase coexistence and response under applied electric fields in superlattices of (PbTiO3)n/(SrTiO3)n suggests the presence of a complex, multi-dimensional system capable of interesting physical responses, such as chirality, negative capacitance and large piezo-electric responses1-3. Here, by varying epitaxial constraints, we discover room-temperature polar-skyrmion bubbles in a lead titanate layer confined by strontium titanate layers, which are imaged by atomic-resolution scanning transmission electron microscopy. Phase-field modelling and second-principles calculations reveal that the polar-skyrmion bubbles have a skyrmion number of +1, and resonant soft-X-ray diffraction experiments show circular dichroism, confirming chirality. Such nanometre-scale polar-skyrmion bubbles are the electric analogues of magnetic skyrmions, and could contribute to the advancement of ferroelectrics towards functionalities incorporating emergent chirality and electrically controllable negative capacitance.

Stimulation with ultrafast light pulses can realize and manipulate states of matter with emergent structural, electronic and magnetic phenomena. However, these non-equilibrium phases are often transient and the challenge is to stabilize them as persistent states. Here, we show that atomic-scale PbTiO3/SrTiO3 superlattices, counterpoising strain and polarization states in alternate layers, are converted by sub-picosecond optical pulses to a supercrystal phase. This phase persists indefinitely under ambient conditions, has not been created via equilibrium routes, and can be erased by heating. X-ray scattering and microscopy show this unusual phase consists of a coherent three-dimensional structure with polar, strain and charge-ordering periodicities of up to 30 nm. By adjusting only dielectric properties, the phase-field model describes this emergent phase as a photo-induced charge-stabilized supercrystal formed from a two-phase equilibrium state. Our results demonstrate opportunities for light-activated pathways to thermally inaccessible and emergent metastable states.

Deterministic creation of multiple ferroelectric states with intermediate values of polarization remains challenging due to the inherent bi-stability of ferroelectric switching. Here we show the ability to select any desired intermediate polarization value via control of the switching pathway in (111)-oriented PbZr0.2Ti0.8O3 films. Such switching phenomena are driven by kinetic control of the volume fraction of two geometrically different domain structures which are generated by two distinct switching pathways: one direct, bipolar-like switching and another multi-step switching process with the formation of a thermodynamically-stable intermediate twinning structure. Such control of switching pathways is enabled by the competition between elastic and electrostatic energies which favors different types of ferroelastic switching that can occur. Overall, our work demonstrates an alternative approach that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, and repeatedly obtainable multi-state polarization without compromising other important properties, and holds promise for non-volatile multi-state functional applications.

Heterointerfaces introduce unique localized defects into ionic conductors. This study explores the nanoionic characteristics exhibited by the proton-conducting oxides SrZr 0.9 Y 0.1 O 3-δ and SrCe 0.95 Yb 0.05 O 3-δ including finely dispersed precipitated platinum nanoparticles. The electrical conductivity of both the platinum-doped oxides revealed reversible nanoionic phenomena caused by the exsolution of the platinum in the form of platinum nanoparticles, at 0.5 vol% relative to the metal oxides, and dissolution in response to a change in gas atmosphere. In comparison with the original conductivity of SrZr 0.9 Y 0.1 O 3-δ and SrCe 0.95 Yb 0.05 O 3-δ , the conductivity of platinum-doped SrZr 0.9 Y 0.1 O 3-δ decreased significantly in a wet hydrogen atmosphere, whereas platinum-doped SrCe 0.95 Yb 0.05 O 3-δ showed almost no decrease in conductivity in the same atmosphere. The different responses of the two materials to the change in gas atmosphere are discussed in relation to the precipitation of platinum nanoparticles.

The emergent ferroelectricity in HfO2-based systems has attracted significant attention as this simple binary high-k dielectric now offers the possibility of nonvolatile function. In this work we employ zero-field and field-dependent pyroelectricity to show that thin films of silicon-doped HfO2 do exhibit a broken-inversion symmetry and are indeed ferroelectric. In addition, the pyroelectric response is found to exhibit a wake-up behavior akin to the wake-up phenomenon observed in the ferroelectric polarization with electric-field cycling. Using polarization-electric field hysteresis measurements, this wake-up phenomenon is attributed to the presence of defect dipoles which explains the measured pyroelectric response. Finally, direct electrocaloric measurements are performed on these silicon-doped HfO2 thin films, revealing an electrocaloric coefficient ∼4 times larger in magnitude than that expected for the measured pyroelectric coefficient. This enhancement is explained using the plausible role played by defect dipoles that contribute to additional configurational or dipolar entropy.

Ferroelectric BiFeO3 is promising for photovoltaic applications, especially in regard to the exploitation of ferroelectric photovoltaic effects for charge separation. However, its large band gap limits efficient sunlight absorption. Here, we demonstrate a new strategy to effectively tune the band gap of tetragonal BiFeO3 via superlattice structuring with the ferroelectric BiCrO3. The (BiCrO3)m/(BiFeO3)n superlattices are found to exhibit conventional ferroelectric properties, but low fundamental band gaps, smaller than either of the parent materials. First-principles calculations reveal that the unexpected band-gap reduction is induced by charge reconstruction due to lattice strain, octahedral distortion, and polarization discontinuity at the BiCrO3-BiFeO3 interfaces. Ultimately, these results provide a new strategy, in the form of superlattice structuring, which could open the door to the creation of efficient ferroelectric photovoltaics.

Ferroelectric BiFeO3 is promising for photovoltaic applications, especially in regard to the exploitation of ferroelectric photovoltaic effects for charge separation. However, its large band gap limits efficient sunlight absorption. Here, we demonstrate a new strategy to effectively tune the band gap of tetragonal BiFeO3 via superlattice structuring with the ferroelectric BiCrO3. The (BiCrO3)m/(BiFeO3)n superlattices are found to exhibit conventional ferroelectric properties, but low fundamental band gaps, smaller than either of the parent materials. First-principles calculations reveal that the unexpected band-gap reduction is induced by charge reconstruction due to lattice strain, octahedral distortion, and polarization discontinuity at the BiCrO3-BiFeO3 interfaces. Ultimately, these results provide a new strategy, in the form of superlattice structuring, which could open the door to the creation of efficient ferroelectric photovoltaics.

The ability to synthesize high-quality, complex-oxide heterostructures has created a veritable playground in which to explore emergent phenomena and exotic phases which arise from the interplay of spin, charge, orbital, and lattice degrees of freedom. Of particular interest is the creation of artificial heterostructures and superlattices built from two or more materials. Through such approaches, it is possible to observe new phases and phenomena that are not present in the parent materials alone. This is especially true in ferroelectric materials where the appropriate choice of superlattice constituents can lead to structures with complex phase diagrams and rich physics. In this article, we review and explore future directions in such ferroic superlattices wherein recent studies have revealed complex emergent polarization topologies, novel states of matter, and intriguing properties that arise from our ability to manipulate materials with epitaxial strain, interfacial coupling and interactions, size effects, and more. We focus our attention on recent work in (PbTiO3)n/(SrTiO3)n superlattices wherein exotic polar-vortex structures have been observed. We review the history of these observations and highlights of recent studies and conclude with an overview and prospectus of how the field may evolve in the coming years.

Recent experimental and computational studies have demonstrated pressure and epitaxial stabilization of polar PbVO3 phases with perovskite-derivative crystal structures. In this study, we demonstrate, by density functional theory (DFT) calculations, the stability of similar perovskite-derivative structures in the KVO3 and NaVO3 systems when subjected to compressive biaxial strain. The electronic structure and polar properties of these compounds are computed as a function of biaxial strain, and the results are compared to those obtained for experimentally observed PbVO3 structures. It is demonstrated that the substitution of Pb with monovalent K or Na cations increases the strength of the vanadyl bond due to the removal of the spatially extended Pb 6p states. Both KVO3 and NaVO3 exhibit epitaxially stabilized perovskite-derivative phases having large polarizations and only small total energy increases relative to their unstrained bulk structures. The calculated epitaxial phase diagram for KVO3 predicts a strain-energy driving force for a phase separation from ∼% to 1.5% misfit strain into a polar Cm phase, having square-pyramidal coordination of the B-site, and a paraelectric Pbcm phase, having tetrahedral coordination of the B-site. The results show that strain-stabilized polar vanadate compounds may occur for other compositions in addition to PbVO3 and that changes in the A-site species can be used to tune bonding, structure, and functional properties in these systems.

The ultrafast motion of oxygen vacancies in solids is crucial for various future applications, such as oxide electrolytes. Visualization and quantification can offer unforeseen opportunities to probe the collective dynamics of defects in crystalline solids, but little research has been conducted on oxygen vacancy electromigration using these approaches. Here, we visualize electric-field-induced creation and propagation of oxygen-vacancy-rich and -poor competing phases and their interface with optical contrast in Ca-substituted BiFeO3 that contains a high density of mobile oxygen vacancies. We quantitatively determined the drift velocity of collective migration to be on the order of 100 μm s−1 with an activation barrier of 0.79 eV, indicating a significantly large ionic mobility of 2 × 10−6 cm2 s−1 V−1 at a remarkably low temperature of 390 °C. In addition, visualization enables direct observation of fluidic behavior, such as the enhancement of conduction at channel edges, which results in U-shaped viscous propagation of the phase boundary and turbulence under a reverse electric field. All of these results provide new insights into the collective motion of defects.

Electric-field switching of polarization is the building block of a wide variety of ferroelectric devices. In turn, understanding the factors affecting ferroelectric switching and developing routes to control it are of great technological significance. This work provides systematic experimental evidence of the role of defects in affecting ferroelectric-polarization switching and utilizes the ability to deterministically create and spatially locate point defects in PbZr0.2Ti0.8O3 thin films via focused-helium-ion bombardment and the subsequent defect-polarization coupling as a knob for on-demand control of ferroelectric switching (e.g., coercivity and imprint). At intermediate ion doses (0.22-2.2×1014ionscm-2), the dominant defects (isolated point defects and small clusters) show a weak interaction with domain walls (pinning potentials from 200-500KMVcm-1), resulting in small and symmetric changes in the coercive field. At high doses (0.22-1×1015ionscm-2), on the other hand, the dominant defects (larger defect complexes and clusters) strongly pin domain-wall motion (pinning potentials from 500 to 1600KMVcm-1), resulting in a large increase in the coercivity and imprint, and a reduction in the polarization. This local control of ferroelectric switching provides a route to produce novel functions; namely, tunable multiple polarization states, rewritable pre-determined 180° domain patterns, and multiple zero-field piezoresponse and permittivity states. Such an approach opens up pathways to achieve multilevel data storage and logic, nonvolatile self-sensing shape-memory devices, and nonvolatile ferroelectric field-effect transistors.

In this reply to S. Durbin's comment on our original paper "Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3," we concur that his final equations 8 and 9 more accurately describe the change in diffracted intensity as a function of Ti displacement. We also provide an alternative derivation based on an ensemble average over unit cells. The conclusions of the paper are unaffected by this correction.

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

[This corrects the article DOI: 10.1371/journal.pgen.1006728.].

Despite continued interest in the multiferroic BiFeO3 for a diverse range of applications, use of this material is limited by its poor electrical leakage. This work demonstrates some of the most resistive BiFeO3 thin films reported to date via defect engineering achieved via high-energy ion bombardment. High leakage in as-grown BiFeO3 thin films is shown to be due to the presence of moderately shallow isolated trap states, which form during growth. Ion bombardment is shown to be an effective way to reduce this free carrier transport (by up to ≈4 orders of magnitude) by trapping the charge carriers in bombardment-induced, deep-lying defect complexes and clusters. The ion bombardment is also found to give rise to an increased resistance to switching as a result of an increase in defect concentration. This study demonstrates a systematic ion-dose-dependent increase in the coercivity, extension of the defect-related creep regime, increase in the pinning activation energy, decrease in the switching speed, and broadening of the field distribution of switching. Ultimately, the use of such defect-engineering routes to control materials will require identification of an optimum range of ion dosage to achieve maximum enhancement in resistivity with minimum impact on ferroelectric switching.

The effects of growth conditions on the chemistry, structure, electrical leakage, dielectric response, and ferroelectric behavior of Ba1−xTiOy thin films are explored. Although single-phase, coherently-strained films are produced in all cases, small variations in the laser fluence during pulsed-laser deposition growth result in films with chemistries ranging from BaTiO3 to Ba0.93TiO2.87. As the laser fluence increases, the films become more barium deficient and the out-of-plane lattice parameter expands (as much as 5.4% beyond the expected value for Ba0.93TiO2.87 films). Stoichiometric BaTiO3 films are found to be three orders of magnitude more conducting than Ba0.93TiO2.87 films and the barium-deficient films exhibit smaller low-field permittivity, lower loss tangents, and higher dielectric maximum temperatures. Although large polarization is observed in all cases, large built-in potentials (shifted loops) and hysteresis-loop pinching are present in barium-deficient films-suggesting the presence of defect dipoles. The effects of these defect dipoles on ferroelectric hysteresis are studied using first-order reversal curves. Temperature-dependent current-voltage and deep-level transient spectroscopy studies reveal at least two defect states, which grow in concentration with increasing deficiency of both barium and oxygen, at ∼0.4 eV and ∼1.2 eV above the valence band edge, which are attributed to defect-dipole complexes and defect states, respectively. The defect states can also be removed via ex post facto processing. Such work to understand and control defects in this important material could provide a pathway to enable better control over its properties and highlight new avenues to manipulate functions in these complex materials.

We demonstrate that a ferroelectric can cause a differential amplification without needing such an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

Nanoscale phonon transport is a key process that governs thermal conduction in a wide range of materials and devices. Creating controlled phonon populations by resonant excitation at terahertz (THz) frequencies can drastically change the characteristics of nanoscale thermal transport and allow a direct real-space characterization of phonon mean-free paths. Using metamaterial-enhanced terahertz excitation, we tailored a phononic excitation by selectively populating low-frequency phonons within a nanoscale volume in a ferroelectric BaTiO3 thin film. Real-space time-resolved x-ray diffraction microscopy following THz excitation reveals ballistic phonon transport over a distance of hundreds of nm, two orders of magnitude longer than the averaged phonon mean-free path in BaTiO3. On longer length scales, diffusive phonon transport dominates the recovery of the transient strain response, largely due to heat conduction into the substrate. The measured real-space phonon transport can be directly compared with the phonon mean-free path as predicted by molecular dynamics modeling. This time-resolved real-space visualization of THz-matter interactions opens up opportunities to engineer and image nanoscale transient structural states with new functionalities.

Flexoelectricity refers to electric polarization generated by heterogeneous mechanical strains, namely strain gradients, in materials of arbitrary crystal symmetries. Despite more than 50 years of work on this effect, an accurate identification of its coupling strength remains an experimental challenge for most materials, which impedes its wide recognition. Here, we show the presence of flexoelectricity in the recently discovered polar vortices in PbTiO3/SrTiO3 superlattices based on a combination of machine-learning analysis of the atomic-scale electron microscopy imaging data and phenomenological phase-field modeling. By scrutinizing the influence of flexocoupling on the global vortex structure, we match theory and experiment using computer vision methodologies to determine the flexoelectric coefficients for PbTiO3 and SrTiO3. Our findings highlight the inherent, nontrivial role of flexoelectricity in the generation of emergent complex polarization morphologies and demonstrate a viable approach to delineating this effect, conducive to the deeper exploration of both topics.

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO_{3}/SrTiO_{3} (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO_{3}. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO_{3}, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO_{3} films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO3/SrTiO3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a1/a2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Antiferroelectric PbZrO3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO3 thin films and understanding the chemistry-structure coupling in Pb1+δZrO3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb1+δZrO3 films are synthesized via pulsed-laser deposition. Although no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO3 and Pb1.1ZrO3 heterostructures remain intrinsically antiferroelectric, the Pb1.2ZrO3 heterostructures exhibit a hysteresis loop indicative of ferroelectric response. Further X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO3 and Pb1.1ZrO3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb1.2ZrO3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite PbZr defects, which drive the Pb1.2ZrO3 heterostructures to a ferroelectric phase with R3c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.

The structural properties, energetics, and polarizations of perovskite-based thin-film oxide systems are computed as a function of biaxial strain state and epitaxial orientation, employing an automated computational workflow based on density functional theory. A total of 14 compositions are considered, of the form ABO3, with A = Ba, K, Na, Pb, and Sr and B = Hf, Sn, Ti, Zr, Nb, Ta, and V site cations chosen to yield tolerance factors with values ranging between 0.95 and 1.1. Three biaxial strain states corresponding to epitaxial growth of (100)-, (110)-, and (111)-oriented films are considered, with misfit strains ranging between -4% to 4%. Results are presented for the series of perovskite-derived phases, and their corresponding symmetries, which are energetically favorable as a function of misfit strain, along with their corresponding equilibrium atomic positions, lattice parameters, and electric polarizations. The results demonstrate robust trends of in-plane polarization enhancement under tensile strain for all epitaxial orientations, and out-of-plane polarization enhancement with compression for the (100)- and (110)-oriented films. Strains corresponding to the (111)-growth orientation lead to a wider variety of out-of-plane polarization behavior, with BaTiO3 showing anomalous diminishing polarization with compression. Epitaxial orientation is shown to have a strong effect on the nature of strain-induced phase transitions, with (100)-oriented systems tending to have smooth, second-order transitions and (110)- and (111)-oriented systems more commonly exhibiting first-order transitions. The significance of this effect for device applications is discussed, and a number of systems are identified as potentially interesting for ferroelectric thin-film applications based on energetic stability and polarization behavior. Analysis of polarization behavior across different orientations reveals distinct groups into which compositions can be organized, some of which have polarization dependencies on misfit strain that have not been reported previously.

Under the sponsorship of the U.S. National Science Foundation, a workshop on emerging research opportunities in ceramic and glass science was held in September 2016. Reported here are proceedings of the workshop. The report details eight challenges identified through workshop discussions: Ceramic processing: Programmable design and assembly; The defect genome: Understanding, characterizing, and predicting defects across time and length scales; Functionalizing defects for unprecedented properties; Ceramic flatlands: Defining structure-property relations in free-standing, supported, and confined two-dimensional ceramics; Ceramics in the extreme: Discovery and design strategies; Ceramics in the extreme: Behavior of multimaterial systems; Understanding and exploiting glasses and melts under extreme conditions; and Rational design of functional glasses guided by predictive modeling. It is anticipated that these challenges, once met, will promote basic understanding and ultimately enable advancements within multiple sectors, including energy, environment, manufacturing, security, and health care.

Tuning graphene conduction states with the remnant polarization of ferroelectric oxides holds much promise for a range of low-power transistor and memory applications. However, understanding how the ferroelectric polarization affects the electronic properties of graphene remains challenging because of a variety of intricate and dynamic screening processes that complicate the interaction. Here, we report on a range of slow electrical conductance relaxation behavior in graphene-ferroelectric field-effect transistors with the extreme case leading to the convergence of two polarization-induced states. Piezoresponse force microscopy through the graphene channel reveals that the ferroelectric polarization remains essentially unchanged during this conductance relaxation. When measured in vacuum, the conductance relaxation is significantly reduced, suggesting equilibration with adsorbates from the ambient atmosphere that can cause charge transfer to and from graphene to be the origin of the slow relaxation.