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Spark ablation is an advantageous method for the generation of metallic nanoparticles with defined particle sizes and compositions. The reaction of the metal particles with the carrier gas during the synthesis and, therefore, the incorporation of those light elements into structural voids or even compound formation was confirmed for hydrides and oxides but has only been suspected to occur for nitrides. In this study, dispersed nanoparticles of Mo3Ni2N and Mo with Janus morphology, and defined particle sizes were obtained by spark discharge generation as a result of carrier gas ionization and characterized using transmission electron microscopy and powder X-ray diffraction. Metal nitrides possess beneficial catalytic and thermoelectric properties, as well as high hardness and wear resistance. Therefore, this method offers the possibility of controlled synthesis of materials which are interesting for numerous applications.

Vanadium oxide on anatase nanoparticles develop atomic scale differences in structure and oxidation state, revealed by in situ transmission electron microscopy.

Earth-abundant transition metal phosphides are promising materials for energy-related applications. Specifically, copper(I) phosphide is such a material and shows excellent photocatalytic activity. Currently, there are substantial research efforts to synthesize well-defined metal–semiconductor nanoparticle heterostructures to enhance the photocatalytic performance by an efficient separation of charge carriers. The involved crystal facets and heterointerfaces have a major impact on the efficiency of a heterostructured photocatalyst, which points out the importance of synthesizing potential photocatalysts in a controlled manner and characterizing their structural and morphological properties in detail. In this study, we investigated the interface dynamics occurring around the synthesis of Ag–Cu3P nanoparticle heterostructures by a chemical reaction between Ag–Cu nanoparticle heterostructures and phosphine in an environmental transmission electron microscope. The major product of the Cu–Cu3P phase transformation using Ag–Cu nanoparticle heterostructures with a defined interface as a template preserved the initially present Ag{111} facet of the heterointerface. After the complete transformation, corner truncation of the faceted Cu3P phase led to a physical transformation of the nanoparticle heterostructure. In some cases, the structural rearrangement toward an energetically more favorable heterointerface has been observed and analyzed in detail at the atomic level. The herein-reported results will help better understand dynamic processes in Ag–Cu3P nanoparticle heterostructures and enable facet-engineered surface and heterointerface design to tailor their physical properties.

Interdiffusion and chemical reactions contribute to tool wear in metal machining. Increased understanding of these processes, through characterisation of worn tools, can facilitate design of more resilient materials through chemical and diffusional passivation. However, the unknown reaction conditions, the large number of elements, and the formation of interspersed phases makes for a complex analysis. Here, we demonstrate the use of scanning transmission electron microscopy and energy dispersive X-ray spectroscopy for characterising the interaction layer between a titanium alloy and a cemented carbide tool. Principal component analysis is used to find chemical correlations and help separate signals from embedded phases. Crucially, we evaluate the required X-ray count statistics from simulated spectrum images and theory prior to the experiment. We find no indications of intermediate phases between the original WC and the metallic W interaction layer. Furthermore, we find enrichment of minor constituents in the titanium alloy closest to the tool which alter the solubility of out-diffusing species, suggesting strong interrelations between the diffusion processes.

Redox processes of oxide materials are fundamental in catalysis. These processes depend on the surface structure and stoichiometry of the oxide and are therefore expected to vary between surface facets. However, there is a lack of direct measurements of redox properties on the nanoscale for analysing the importance of such faceting effects in technical materials. Here, we address the facet-dependent redox properties of vanadium-oxide-covered anatase nanoparticles of relevance to, e.g., selective catalytic reduction of nitrogen oxides. The vanadium oxidation states at individual nanoscale facets are resolved in situ under catalytically relevant conditions by combining transmission electron microscopy imaging and electron energy loss spectroscopy. The measurements reveal that vanadium on {001} facets consistently retain higher oxidation states than on {10l} facets. Insight into such structure-sensitivity of surface redox processes opens prospects of tailoring oxide nanoparticles with enhanced catalytic functionalities.

Synthesis methods of highly functional core@shell nanoparticles with high throughput and high purity are in great demand for applications, including catalysis and optoelectronics. Traditionally chemical synthesis has been widely explored, but recently, gas-phase methods have attracted attention since such methods can provide a more flexible choice of materials and altogether avoid solvents. Here, we demonstrate that Cu@Ag core–shell nanoparticles with well-controlled size and compositional variance can be generated via surface segregation using spark ablation with an additional heating step, which is a continuous gas-phase process. The characterization of the nanoparticles reveals that the Cu–Ag agglomerates generated by spark ablation adopt core–shell or quasi-Janus structures depending on the compaction temperature used to transform the agglomerates into spherical particles. Molecular dynamics (MD) simulations verify that the structural evolution is caused by heat-induced surface segregation. With the incorporated heat treatment that acts as an annealing and equilibrium cooling step after the initial nucleation and growth processes in the spark ablation, the presented method is suitable for creating nanoparticles with both uniform size and composition and uniform bimetallic configuration. We confirm the compositional uniformity between particles by analyzing compositional variance of individual particles rather than presenting an ensemble-average of many particles. This gas-phase synthesis method can be employed for generating other bi- or multi-metallic nanoparticles with the predicted configuration of the structure from the surface energy and atomic size of the elements.

In situ diffuse reflectance infrared Fourier transform spectroscopy has been used to distinguish surface hydroxyl groups on Al2O3 and PdO/Al2O3 model catalysts calcined at 500-900 °C. Employing the operando approach, the formation of surface hydroxyl groups has been correlated to the methane oxidation activity for PdO/Al2O3 catalysts using a PdO powder sample as reference. The results show that the alumina support stabilizes active PdO particles leading to enhanced apparent methane turnover frequency (TOF), which decreases slowly in dry conditions due to alumina hydroxylation. Wet conditions cause severe hydroxylation that is detrimental for the methane TOF. The hydroxylation follows two different routes, i.e., spillover of hydrogen-containing species to the PdO-Al2O3 boundary and/or the close proximity of the supported PdO particles and under wet conditions also dissociation of gas phase water on the entire alumina surface. Both hydroxylation routes obey varying kinetics such that near saturation is reached quickly (minutes) followed by a continuous slow growth for prolonged exposure times (hours). At low temperatures, inhibition of palladium active sites on the rim of the PdO particles close to alumina seems to be of particular importance for the observed detrimental effect of water, whereas water induced morphological changes (no sintering observed) of the PdO particles play a minor role.

The oxidation of soot is a complex process due to the heterogeneous structure of the material. Several mechanisms have been hypothesized based on ex situ studies, but need confirmation from in situ observation; furthermore, deeper insight is needed to develop and validate structure-dependent reaction mechanisms. In this work, soot oxidation was for the first time observed at atomic scale in situ, in real-time, using a spherical aberration-corrected Environmental Transmission Electron Microscope. The transformation of individual soot particles was followed through from initiation to complete conversion. Observations clearly showed the existence of different burning modes and particle fragmentation previously hypothesized in the literature. Furthermore, transitioning between the modes—affected by temperature and O2 pressure—was unambiguously observed, explaining previous observations regarding structure-dependent and time-varying oxidation rates. A new mode of burning in which oxidation happens rapidly in the bulk phase with the disruption of long-range lamellar order was observed and is suspected to be dominant at practically relevant conditions. The ability to unambiguously relate different burning modes in terms of nanostructure will be of importance for optimizing both soot emission abatement and properties of nanoparticulate carbon products.

In situ structural and chemical state characterization of Rh/CeO2 and Ni/CeO2 catalysts during atmospheric pressure CO2 methanation has been performed by a combined array of time-resolved analytical techniques including ambient-pressure X-ray photoelectron spectroscopy, high-energy X-ray diffraction and diffuse reflectance infrared Fourier transform spectroscopy. The ceria phase is partially reduced during the CO2 methanation and in particular Ce3+ species seem to facilitate activation of CO2 molecules. The activated CO2 molecules then react with atomic hydrogen provided from H-2 dissociation on Rh and Ni sites to form formate species. For the most active catalyst (Rh/CeO2), transmission electron microscopy measurements show that the Rh nanoparticles are small (average 4 nm, but with a long tail towards smaller particles) due to a strong interaction between Rh particles and the ceria phase. In contrast, larger nanoparticles were observed for the Ni/CeO2 catalyst (average 6 nm, with no crystallites below 5 nm found), suggesting a weaker interaction with the ceria phase. The higher selectivity towards methane of Rh/CeO2 is proposed to be due to the stronger metal-support interaction.

Redox processes of oxide materials are fundamental in catalysis. These processes depend on the surface structure and stoichiometry of the oxide and are therefore expected to vary between surface facets. However, there is a lack of direct measurements of redox properties on the nanoscale for analysing the importance of such faceting effects in technical materials. Here, we address the facet-dependent redox properties of vanadium-oxide-covered anatase nanoparticles of relevance to, e.g., selective catalytic reduction of nitrogen oxides. The vanadium oxidation states at individual nanoscale facets are resolved in situ under catalytically relevant conditions by combining transmission electron microscopy imaging and electron energy loss spectroscopy. The measurements reveal that vanadium on {001} facets consistently retain higher oxidation states than on {10l} facets. Insight into such structure-sensitivity of surface redox processes opens prospects of tailoring oxide nanoparticles with enhanced catalytic functionalities.

Energy dispersive x-ray spectroscopy in a transmission electron microscope is often the first method employed to characterize the composition of nanowires. Ideally, it should be accurate and sensitive down to fractions of an atomic percent, and quantification results are often reported as such. However, one can often get substantial errors in accuracy even though the precision is high: for nanowires it is common for the quantified V/III atomic ratios to differ noticeably from 1. Here we analyse the origin of this systematic error in accuracy for quantification of the composition of III–V nanowires. By varying the electron illumination direction, we find electron channelling to be the primary cause, being responsible for errors in quantified V/III atomic ratio of 50%. Knowing the source of the systematic errors is required for applying appropriate corrections. Lastly, we show how channelling effects can provide information on the crystallographic position of dopants.

Low-coordinate surface sites, such as those present on high-index step edges, often exhibit chemical reactivity that markedly differs from more close-packed facets. To understand the site-specific reactivity, insight into the three-dimensional atomic arrangement of step edges is needed. Here, we employ atomic-resolution transmission electron microscopy (TEM) of nanoparticles in combination with scanning tunneling microscopy (STM) of a single crystal surface to uncover the structure of prevalent step edges on the anatase TiO2 (001) surface.

Functional materials and devices require nanoscale control of morphology, crystal structure, and composition. Vapor-liquid-solid (VLS) crystal growth and its related growth modes enable the synthesis of 1D nanostructures, commonly called "nanowires", where the necessary nanoscale heterogeneity can be encoded axially. During the VLS process, a seed particle collects atoms and directs the nucleation of crystalline material. Modulating the delivery of growth species or conditions permits compositional and/or structural encoding. A range of materials and devices (e.g., for electronics, photonics, thermal transport, and bioprobes) have been produced by VLS growth, but plenty of challenges remain: many desirable structures cannot currently be made, and even for those structures that can be made, the parameter window-in terms of, e.g., temperatures and pressures-is often narrow. Moreover, we are quite far from ab initio determination of which growth conditions should be used or even if a desired structure is fundamentally achievable within the VLS framework. To fully understand the challenges and promises of VLS growth, the governing physicochemical processes must be explored and understood at the atomic scale. This final level of detail is being unraveled with the help of in situ characterization techniques. The picture that is emerging is of a highly dynamical process with several deeply interconnected and highly fundamental components that are difficult to detect with postgrowth ex situ interrogation. For example, recent in situ microscopy and spectroscopy studies have shown that the growth front can undergo cyclical reshaping involving dissolution as well as crystallization and that the state of the nanowire surface, which changes with growth conditions as a result of a competition between adsorption and desorption of passivating species, plays a crucial role in determining the transport to/from and the stability of the seed particle. The available in situ observations currently constitute a somewhat disparate list, but if they can be connected to each other and to the outstanding challenges, they promise meaningful advances in our understanding of VLS growth. In this Account, we review the state of the art regarding the atomic-scale thermodynamic and kinetic phenomena that control VLS growth. Rather than cataloging all of the outstanding contributions to the field, we give priority to in situ observations that have revealed unexpected effects as well as those that hint at incongruities in our current knowledge. As such, our discussion should be viewed as an opportunity to gain deeper understanding and control of the fundamental processes at play, which will be crucial in future scale-up efforts and expansion to completely new materials systems and application areas.

Surface redox processes involving oxygen atom exchange are fundamental in catalytic reactions mediated by metal oxides. These processes are often difficult to uncover due to changes in the surface stoichiometry and atomic arrangement. Here we employ high-resolution transmission electron microscopy to study vanadium oxide supported on titanium dioxide, which is of relevance as a catalyst in, e.g., nitrogen oxide emission abatement for environmental protection. The observations reveal a reversible transformation of the vanadium oxide surface between an ordered and disordered state, concomitant with a reversible change in the vanadium oxidation state, when alternating between oxidizing and reducing conditions. The transformation depends on the anatase titanium dioxide surface termination and the vanadium oxide layer thickness, suggesting that the properties of vanadium oxide are sensitive to the supporting oxide. These atomic-resolution observations offer a basis for rationalizing previous reports on shape-sensitive catalytic properties., Redox processes in metal oxide surfaces can exhibit structure sensitivities which are difficult to uncover. Here, the authors use atomic-resolution imaging to demonstrate facet dependent alterations in the surfaces of supported vanadium oxide upon reduction and oxidation.

Live observations of growing nanowires using in situ transmission electron microscopy (TEM) is becoming an increasingly important tool for understanding the dynamic processes occurring during nanowire growth. Here we present observations of growing InAs nanowires, which constitute the first reported in situ growth of a In-V compound in a transmission electron microscope. Real time observations of events taking place over longer growth lengths were possible due to the high growth rates of up to 1 nm/s that were achieved. Straight growth (mainly in aOE (c) 111 > B directions) was observed at uniform temperature and partial pressure while intentional fluctuations in these conditions caused the nanowires to form kinks and change growth direction. The mechanisms behind the kinking are discussed in detail. In situ observations of nanowire kinking has previously only been reported for nonpolar diamond structure type materials (such as Si), but here we present results for a polar zinc blende structure (InAs). In this study a closed cell with electron and X-ray transparent a-SiN windows was used in a conventional high resolution transmission electron microscope, enabling high resolution imaging and compositional analysis in between the growth periods. (Less)

In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.

In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak current, Jpeak = 2310 kA/cm(2), than the maximum peak current of axial GaSb/InAs(Sb) Esaki diodes per unit chip area. The radial TFETs also deliver high peak current densities Jpeak = 1210 kA/cm(2), while their axial counterparts at most carry Jpeak = 77 kA/cm(2), normalized to the largest cross-sectional area of the nanowire.

Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs–GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire–substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.

The nanowire geometry offers significant advantages for exploiting the potential of III-Sb materials. Strain due to lattice mismatch is efficiently accommodated, and carrier confinement effects can be utilized in tunneling and quantum devices for which the III-Sb materials are of particular interest. It has however proven difficult to grow thin (below a few tens of nanometers), epitaxial III-Sb nanowires, as commonly no growth is observed below some critical diameter. Here we explore the processes limiting the diameter of III-Sb nanowires in a model system, in order to develop procedures to control this effect. The InAs-GaSb heterostructure system was chosen due to its great potential for tunneling devices in future low-power electronics. We find that with increasing growth temperature or precursor partial pressures, the critical diameter for GaSb growth on InAs decreases. To explain this trend we propose a model where the Gibbs-Thomson effect limits the Sb supersaturation in the catalyst particle. This understanding enabled us to further reduce the nanowire diameter down to 32 nm for GaSb grown on 21 nm InAs stems. Finally, we show that growth conditions must be carefully optimized for these small diameters, since radial growth increases for increased precursor partial pressures beyond the critical values required for nucleation.

Aerotaxy, an aerosol-based growth method, is used to produce gallium arsenide nanowires with a growth rate of about 1 micrometre per second, which is 20 to 1,000 times higher than previously reported for traditional nanowires and allows sensitive and reproducible control of the nanowires’ optical and electronic properties. Nanowires hold promise for a variety of applications in electronics, energy and biomedical technologies. However, a major hurdle is the large-scale production of high-quality nanowires. In this paper, Lars Samuelson and colleagues develop a low-cost aerosol-based synthesis of gallium arsenide (GaAs) nanowires with throughput substantially better than achieved by conventional methods. The method produces high-quality nanowires with tunable dimensions, good optical properties and spectral uniformity. Semiconductor nanowires are key building blocks for the next generation of light-emitting diodes1, solar cells2 and batteries3. To fabricate functional nanowire-based devices on an industrial scale requires an efficient methodology that enables the mass production of nanowires with perfect crystallinity, reproducible and controlled dimensions and material composition, and low cost. So far there have been no reports of reliable methods that can satisfy all of these requirements. Here we show how aerotaxy, an aerosol-based growth method4, can be used to grow nanowires continuously with controlled nanoscale dimensions, a high degree of crystallinity and at a remarkable growth rate. In our aerotaxy approach, catalytic size-selected Au aerosol particles induce nucleation and growth of GaAs nanowires with a growth rate of about 1 micrometre per second, which is 20 to 1,000 times higher than previously reported for traditional, substrate-based growth of nanowires made of group III–V materials5,6,7. We demonstrate that the method allows sensitive and reproducible control of the nanowire dimensions and shape—and, thus, controlled optical and electronic properties—through the variation of growth temperature, time and Au particle size. Photoluminescence measurements reveal that even as-grown nanowires have good optical properties and excellent spectral uniformity. Detailed transmission electron microscopy investigations show that our aerotaxy-grown nanowires form along one of the four equivalent 〈111〉B crystallographic directions in the zincblende unit cell, which is also the preferred growth direction for III–V nanowires seeded by Au particles on a single-crystal substrate. The reported continuous and potentially high-throughput method can be expected substantially to reduce the cost of producing high-quality nanowires and may enable the low-cost fabrication of nanowire-based devices on an industrial scale.

Semiconductor III-V nanowires are promising components of future electronic and optoelectronic devices, but they typically show a mixed wurtzite-zinc blende crystal structure. Here we show, theoretically and experimentally, that the crystal structure dominates the conductivity in such InP nanowires. Undoped devices show very low conductivities and mobilities. The zincblende segments are quantum wells orthogonal to the current path and our calculations indicate that an electron concentration of up to 4.6 × 10(18) cm(-3) can be trapped in these. The calculations also show that the room temperature conductivity is controlled by the longest zincblende segment, and that stochastic variations in this length lead to an order of magnitude variation in conductivity. The mobility shows an unexpected decrease for low doping levels, as well as an unusual temperature dependence that bear resemblance with polycrystalline semiconductors.

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

The twin interface structure in twinning superlattice InP nanowires with zincblende structure has been investigated using electron exit wavefunction restoration from focal series images recorded on an aberration-corrected transmission electron microscope. By comparing the exit wavefunction phase with simulations from model structures, it was possible to determine the twin structure to be the ortho type with preserved In-P bonding order across the interface. The bending of the thin nanowires away from the intended ⟨110⟩ axis could be estimated locally from the calculated diffraction pattern, and this parameter was successfully taken into account in the simulations.

We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.

Nanowires grown with the vapor-liquid-solid method commonly exhibit polytypism, showing both zincblende and wurtzite crystal structure. We have grown p-type InP nanowires using DEZn as a dopant precursor and studied the wetting of the seed particle and the nanowire crystal structure. The nanowires grown with high DEZn molar fractions exhibit deformed seed particles after growth. We observe 20% smaller nanowire diameter at the highest DEZn molar fraction, indicating a significant increase in contact angle of the seed particle during growth. The decrease in diameter correlates with an increase in zincblende segment length as measured by TEM. We explain the results with a modified nucleation model.