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1. Insulators for 2D nanoelectronics: the gap to bridge

17. Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture

18. First Principles Evaluation of Topologically Protected Edge States in MoS2 1T′ Nanoribbons with Realistic Terminations

19. On the limits of applicability of drift-diffusion based hot carrier degradation modeling.

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