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8. Charge-based scanning probe readback of nanometer-scale ferroelectric domain patterns at megahertz rates.

Author

Martin G Forrester, Joachim W Ahner, Mark D Bedillion, Cedric Bedoya, Dierk G Bolten, Chieh Chang, Gudrun de Gersem, Shan Hu, Earl C Johns, Maissarath Nassirou, Jason Palmer, Andreas Roelofs, Markus Siegert, Shingo Tamaru, Venugopalan Vaithyanathan, Florin Zavaliche, Tong Zhao, and Yongjun Zhao

Subjects
NANOELECTROMECHANICAL systems, FERROELECTRIC devices, INFORMATION retrieval, RANDOM access memory, SCANNING probe microscopy
Abstract

We present a method for data storage in continuous ferroelectric (FE) media, applicable to storage systems based on one or more scanning probes. Written FE domains are read back in a destructive fashion by applying a constant voltage of magnitude greater than the coercive voltage, as is done in FE random access memory (FeRAM). The resulting flow of screening charges through the readback amplifier provides sufficient signal to allow readback of domains of minimum dimension of the order of 10 nm at MHz rates, orders of magnitude faster than previously demonstrated techniques for readback of domains in continuous FE media. [ABSTRACT FROM AUTHOR]

Published
2009
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