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We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chirped QWD layers show emission spectra centered at 1030 nm with a full-width at half-maximum of 80 nm and an output power of 2 mW. In a 250 µm long SLD with a tilted stripe that has an increased output loss, the width of the emission spectra is 113 nm at 20 °C and 120 nm at 60 °C.

The power and temperature characteristics of Ø200 µm half-disk microlasers with a half-ring metal contact and high-density InGaAs/GaAs quantum dots are studied. In a continuous wave (CW) mode, the maximal optical power at 20°C was 134 mW, and the maximal CW lasing temperature reached 113°C. In a pulsed regime the maximal optical power of 1.6 W, limited by catastrophic degradation, was achieved. By comparing the CW and pulsed current-voltage characteristics, the dependence of a microlaser temperature on CW pumping current was determined. At CW currents corresponding to the maximal wall-plug efficiency, the maximal optical power, and complete lasing quenching, the laser temperatures were 60, 99, and 149°C, respectively.

A quantum-dot microdisk was optically pumped by continuous-wave excitation with a level sufficient for the ground-state lasing. The microdisk was additionally illuminated with sub-ps pulses of various powers. It was found that there is a critical level of pulse power that determines the subsequent transient process of the microlaser. Depending on the level of the pulsed excitation, the ground-state lasing intensity can be either enhanced (for weak pulses) or fully quenched (for strong pulses). In the latter case, the excited-state lasing is ignited for a short time. All dynamic phenomena occur on a time scale of the order of 100 ps, and the duration of the transient process as a whole (from the arrival of the excitation pulse to the restoration of steady-state intensities) lasts no more than 0.5 ns. Using this phenomenon, a microlaser can be rapidly switched between two states with the switching controlled by the level of the incoming optical pulse.

GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs' thicknesses. In this work, to reduce this effect, we fabricated cylindrical nanocolumns of 50 to 5000 nm in diameter using GaN/AlN single QW heterostructures grown via molecular beam epitaxy while using photolithography with a combination of wet and reactive ion etching. Photoluminescence measurements in an ultrasmall QW region enclosed in a nanocolumn revealed that narrow lines of individual excitons were localized on potential fluctuations attributed to 2-3-monolayer-high GaN clusters, which appear in QWs with an average thickness of 1 ML. The kinetics of luminescence with increasing temperature is determined via the change in the population of localized exciton states. At low temperatures, spin-forbidden dark excitons with lifetimes of ~40 ns predominate, while at temperatures elevated above 120 K, the overlying bright exciton states with much faster recombination dynamics determine the emission.

In recent years, single-photon sources (SPSs) based on the emission of a single semiconductor quantum dot (QD) have been actively developed. While the purity and indistinguishability of single photons are already close to ideal values, the high brightness of SPSs remains a challenge. The widely used resonant excitation with cross-polarization filtering usually leads to at least a two-fold reduction in the single-photon counts rate, since single-photon emission is usually unpolarized, or its polarization state is close to that of the exciting laser. One of the solutions is the use of polarization-selective microcavities, which allows one to redirect most of the QD emission to a specific polarization determined by the optical mode of the microcavity. In the present work, elliptical micropillars with distributed Bragg reflectors are investigated theoretically and experimentally as a promising design of such polarization-selective microcavities. The impact of ellipticity, ellipse area and verticality of the side walls on the splitting of the optical fundamental mode is investigated. The study of the near-field pattern allows us to detect the presence of higher-order optical modes, which are classified theoretically. The possibility of obtaining strongly polarized single-photon QD radiation associated with the short-wavelength fundamental cavity mode is shown.

We report on single-photon emitters for the telecommunication O-band (1260-1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g(2)(0) = 0.18 at 8 K.

We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former's bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4-3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.

We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm in diameter microdisk laser were conducted at room and elevated temperatures during more than 1200 hr. The average rate of the output power degradation was about 25 and 29 nW/hr at 40°C and 60°C, respectively.

We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential efficiency of about 31%, and a peak electrical-to-optical power conversion efficiency of 15% in a 31 μm diameter microdisk laser. The continuous-wave lasing is observed up to 110°C.

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600  A/cm 2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320-1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength (dλ/dI=0.1  nm/mA) and the low specific thermal resistance of 4×10 -3 °C×cm 2 /W are demonstrated.