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Como en otros países, en el Perú, el bajo rendimiento escolar es un mal que afecta a una gran cantidad de estudiantes. El aprendizaje de las matemáticas, en nuestro contexto es parte de problemática nacional. No obstante, pese a las diferentes propuestas en numerosos estudios, los resultados científicos muestran que no estamos teniendo efectos en la mejora según los exámenes censales, ni en las políticas educativas. El objetivo del presente artículo consiste en presentar una revisión sistemática referente al aprendizaje basado en juegos, aplicado de manera central a la enseñanza de las matemáticas en la educación sobre todo en la educación secundaria, para ello tomaremos en cuenta los fundamentos existentes sobre los cambios que ha ocasionado en las aulas la aplicación del método lúdico que a pareces son notables y considerables formando nuevos entornos de aprendizaje para la matemáticas , los cuales logran asimilar la atención de muchos estudiantes, motiva el compromiso y mejores resultados en el aprendizaje. Se empleó una metodología de revisión de literaria por años desde el 2010 al 2020 partiendo de quince estudios bibliográficos así mismo bases de datos de significativo interés en el ramo educacional, se procede a realizar el análisis bibliográfico respectivo, la evaluación de calidad y a generar las conclusiones correspondientes. Los resultados muestran los diferentes resultados obtenidos por los autores considerados en el presente que abordan mediaciones variadas y que se orientan al desarrollo cognitivo, afectivo, socioemocional, de habilidades blandas y de comportamiento dentro del área de Matemática. Estos resultados permitirán a los futuros investigadores y a las instituciones educativas interesadas en el tema, analizar la significancia y los aportes reeelevantes que trae el uso de los juegos en el aprendizaje.

As Ethernet rapidly replaces legacy networks as the core high-speed network in helicopter’s avionics and mission systems, we ask in this paper the question of the technical benefits of migrating to Ethernet Time-Sensitive-Networking (TSN). Indeed, TSN has become a rich toolbox of mechanisms and protocols to address Quality-of-Service (QoS) requirements pertaining to timing and reliability. TSN is quickly becoming the prominent technology for wired high-speed communications in a variety of application domains like automotive, industry 4.0 and telecom. In this context, this work explores the use of TSN timing QoS mechanisms for helicopter’s avionics and mission systems on a case-study representative of the communication requirements of next-generation systems. This study aims to provide quantified insights into what can be expected from TSN in terms of timing, memory usage and extensibility.

During the first decades of the Cuban Revolution, different movies described the interest of the new State on education as a means of changing society. Feature films such as Lucía (Humberto Solás, 1868), El brigadista (Octavio Cortázar, 1977) or De cierta manera (Sara Gómez, 1974) had characters whose goal was not only teaching different groups but also converting them to the “revolutionary” ideology. In these films, teachers embodied a model individual, a “new man” representing and speaking on behalf of the Law. These official voices also legitimized an accent, and a lifestyle commonly related to the lettered white Habanero man. Peasants, women, and Afro-descendants comprised the group to be reformed. Their religious, culinary, sexual, and linguistic practices were associated with machismo, burglary, and violence. These movies aimed to instruct the audience as their teachers did in the plot, by offering a “revolutionary” model of behavior opposed to “deviated” ones.

γ-Alumina is a promising candidate for fabricating the gate of the diamond metal oxide semiconductor field effect transistor based on oxygen termination due to its high bandgap of 6.7 eV and high static dielectric constant of 9. Besides these properties, having a sufficient barrier for holes is mandatory to avoid carriers leakage through the gate. However, the band offset of the diamond/alumina heterojunction can be affected by the alumina crystallinity and interface bonds, which depend on multiple factors such as deposition and annealing temperature or diamond surface treatment prior to deposition. In this work, the heterojunction of atomic layer deposited alumina and (1 0 0) p-diamond is studied using X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy studies reveal that the deposited alumina layer is 35 nm thick and present the gamma phase. The valence band offset between diamond and γ-alumina is evaluated on a single sample with a new methodology based on an ion etching XPS depth profile. The obtained value for the valence band offset of diamond and γ-alumina is 3.4 eV.

International audience; Microelectronic processing to fabricate electronic devices on Si has been extensively studied and well characterized for several decades. This type of processing has been extrapolated for the fabrication of devices on other semiconducting materials such as group III–V materials, SiGe and SiC. However, the structural damage and its functional implication are still not fully understood for sensitive materials like InP. The present work investigates the lattice strain induced by the inductively coupled plasma dry etching process on InP stripes fabricated after masking the stripes with plasma-enhanced chemical vapor deposition-grown SiNx. High-resolution scanning transmission electron microscopy observations allowed us to deduce the strain at different locations in the fabricated stripes. Local strains in the range of 10−3 are observed, which should strongly modify the material carrier behaviour.

Alumina is a promising candidate for fabricating the gate of diamond metal oxide semiconductor field effect transistor (MOSFET) due to its outstanding nominal properties: A high gap of 8.8 eV and a high static dielectric constant of 9. However, such properties are strongly dependent on the synthesis. As gate oxides are usually very thin layers (5–50 nm), investigating its properties is not straightforward. Electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) methodology is reported in the nm-scale range. Monochromatic 60 keV electron beam is used to obtain the low energy loss spectrum in order to allow an accurate zero loss peak deconvolution and to avoid Cherenkov effect. The low energy loss spectrum is used to extract the bandgap along diamond-alumina interface and to perform Kramers-Kronig analysis to obtain the complex dielectric function of the Al2O3. High resolution electron microscopy (HREM) and STEM-EELS investigations show that the oxide phase of our sample is γ alumina. Its measured bandgap is 6.8 eV and the dielectric functions yield a value of 3 for the high frequency dielectric constant.

We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC.

In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications.

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Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P) and nitrogen (N) using microwave plasma-enhanced chemical vapor deposition. While the methane (CH4) and P concentrations are kept constant, the N2 concentration is varied from 0.2% to 2% and supplemented by H2. The composition of the gas mixture is tracked in situ by optical emission spectroscopy. Scanning electron microscopy, atomic force microscopy (AFM), transmission electron microscopy, and Raman spectroscopy are used to provide evidence of the changes in crystal morphology, surface roughness, microstructure, and crystalline quality of the different NCD samples. The FEE results display that the 2% N2 concentration sample had the best FEE properties, viz. the lowest turn-on field value of 14.3 V/&micro, m and the highest current value of 2.7 &micro, A at an applied field of 73.0 V/&micro, m. Conductive AFM studies reveal that the 2% N2 concentration NCD sample showed more emission sites, both from the diamond grains and the grain boundaries surrounding them. While phosphorus doping increased the electrical conductivity of the diamond grains, the incorporation of N2 during growth facilitated the formation of nano-graphitic grain boundary phases that provide conducting pathways for the electrons, thereby improving the FEE properties for the 2% N2 concentrated NCD films.

International audience; This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi-stack using chemical vapor deposition. Si(100) heteroepitaxyon 3C-SiC(100) is identified as the critical step which is solved by pulseinsertion of precursors during cooling. It lead to the roughening of the 3C-SiC surface which in turn lead to the quasi-exclusive nucleation of (100)oriented islands at the expanse of (110) ones. Subsequent Si epitaxy on suchmodified surface allows growing fully (100) oriented Si layer, as confirmed bystructural characterization of the layers. The 3C-SiC grown on top of suchSi(100) layer is again of (100) orientation, forming thus a fully (100) orientedstack. Due to the high lattice mismatch, each interface of the stack ischaracterized by a high density of crystalline defects which are shown torecombine along with thickness. Antiphase domains present inside the 3C-SiC seed are shown to have no detrimental influence on the Si layer quality.Without the surface modification step, the Si layers grown on 3C-SiC arealways polycrystalline with a mixture of (110) and (100) orientations.

p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.

High dielectric constant (high-κ) thin films are ubiquitous in research as they impart enhanced properties to microelectronic applications. Novel combinations for coupling high-κ and ultra-wide band gap semiconductors are being investigated for niche applications, dependent on the environmental conditions for device operation. Typically, high-κ films such as alumina are deposited by atomic layer deposition (ALD), a technique heavily dependent on surface chemistry. This work investigates the effect of plasma surface functionalization of boron doped diamond (BDD) semiconducting films on interface quality with top-layers of ALD alumina (AlO) films, by analyzing its susceptibility to deformation; being particularly vital for electronics subjected to physically demanding environments. Alumina thin films were deposited unto as-grown (AlO-H-BDD) and O2 plasma treated (AlO-O-BDD) polycrystalline BDD. XPS analysis performed on plasma exposed BDD films, prior to AlO deposition, demonstrated a 3% increase in O surface ligands compared to the as-grown surface. Nanoindentation analysis demonstrated plastic deformation within the alumina layer for AlO-O-BDD, for the tested loads, whereas AlO-H-BDD experienced film delamination and deformation beyond the alumina-BDD interface. TEM analysis revealed that delamination was most likely due to low cohesive strength of alumina near the interface, explained by fewer –OH and –CO (ether) BDD surface ligands on H-BDD.

With the aim to improve the properties of aeronautical carbon fiber (CF)-reinforced polymer materials, boron-doped diamond (BDD) has been grown on commercial CFs by microwave plasma-enhanced chemical vapor deposition. The growth of a BDD layer on CF is expected to increase the mechanical, electrical, and thermal conductivities of the composite. The present contribution reports the different growth stages and their associated nanostructures of the BDD/CF resulting system using transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. The revealed carbon nanostructure shows four steps of growth with the following characteristics: 1) transitional interlayer, 2) graphite nanowall, 3) cauliflower-like nanocrystalline diamond, and 4) microcrystalline diamond.

As a cultural creation, the face has a long history. Our relationship with the face is through its images: Mirrors, reflections, photographs, visions. The experience about the face deserves a genealogy, a careful attention because it is the product of a cultural construction that establishes the social status granted to the person. Different mediums of the image persisted in making faces visible or recognizable. The anthropometry of the 19th century established a new relationship between the face and the Self. Photography allowed us to explore, measure and classify the images of the face and of the human being. This explains the fascination with photography in Bertillon and Darwin. At the same time, the arrival of photography also opened the way to the era of the democratization of the face. But the images of faces that we will approach in this article are images produced by techniques of reconstruction and facial recognition based on biometric and genetic data. Biometrics seeks to recognize individuals through physical and behavioral traits, articulating an image technique with mathematical techniques. Even portraits have become instruments for surveillance. This responds to the conditioning of an apparatus that captures and determines behaviors and discourses. As Giorgio Agamben argues, certain apparatus have imposed themselves as spatial optical articulations, but also epistemic, political and ideological, capable of assuming a specific conception of the vision and position of the subject in front of the world. We define the face as an apparatus. If the history of the portrait pictures theory, as proposed by W. f. T. Mitchell, in relation to the history of the development of the process of individuation of the self, genetic biometrics dissolves it completely, since it is not a measure of the human but its negation.

In this article, we advocate for the use of IEEE 802.1 Time-Sensitive Networking (TSN) as deterministic transport for the network layer of fog computing in industrial automation. We give an overview of the relevant TSN protocol services and motivate the use of TSN. We propose a configuration agent architecture based on IEEE 802.1Qcc and OPC Unified Architecture (OPC UA), capable of performing runtime network configuration. We briefly present the configuration challenges for scheduled networks (considering a subset of TSN mechanisms), and illustrate one problem: the configuration of schedule tables of such networks for hard real-time control applications. We propose a list scheduling-based heuristic to solve this problem. Our evaluation and comparison to previous work demonstrate the feasibility of reconfiguring the scheduled network at runtime for industrial applications within the fog.

With increasing interest over the past decade in space-related remote sensing and communications using near-infrared (NIR) wavelengths, there is a need for radiation studies on NIR avalanche photodiodes (APDs), due to the high radiation environment in space. In this work, we present an experimental study of proton radiation effects on performance parameters of InAs APDs, whose sensitivity extends from visible light to ~3.5 μm. Three irradiation energies (10.0, 31.4, and 58.8 MeV) and four fluences (10sup9/supto 10sup11/supp/cmsup2/sup) were used. At the harshest irradiation condition (10.0 MeV energy and 10sup11/supp/cmsup2/supfluence) the APDs' avalanche gain and leakage current showed a measurable degradation. However, the responsivity of the APDs was unaffected under all conditions tested. The data reported in this article are available from the figshare digital repository (DOI: https://dx.doi.org/10.15131/shef.4560562).

Nowadays, industrial networks are often used for safety-critical applications with real-time requirements. Such applications usually have a time-triggered nature with message scheduling as a core property. Scheduling requires nodes to share the same notion of time, that is, to be synchronized. Therefore, clock synchronization is a fundamental asset in real-time networks. However, since typical standards for clock synchronization, for example, IEEE 1588, do not provide the required level of security, it raises the question of clock synchronization protection. In this paper, we identify a way to break synchronization based on the IEEE 1588 standard, by conducting a man-in-the-middle (MIM) attack followed by a delay attack. A MIM attack can be accomplished through, for example, Address Resolution Protocol (ARP) poisoning. Using the AVISPA tool, we evaluate the potential to perform a delay attack using ARP poisoning and analyze its consequences showing both that the attack can, indeed, break clock synchronization and that some design choices, such as a relaxed synchronization condition mode, delay bounding, and using knowledge of environmental conditions, can make the network more robust/resilient against these kinds of attacks. Lastly, a Configuration Agent is proposed to monitor and detect anomalies introduced by an adversary performing attacks targeting clock synchronization.

Earliest Deadline First (EDF) is the most widely studied optimal dynamic scheduling algorithm for uniprocessor real-time systems. For realistic programs, tasks must be allowed to exchange data and use other forms of resources that must be accessed under mutual exclusion. With EDF scheduled systems, access to such resources is usually controlled by the use of Baker’s Stack Resource Protocol (SRP). In this paper we propose an alternative scheme based on deadline inheritance. Shared resources are assigned a relative deadline equal to the minimum (floor) of the relative deadlines of all tasks that use the resource. On entry to the resource a task’s current absolute deadline is subject to an immediately reduction to reflect the resource’s deadline floor. On exit the original deadline for the task is restored. We show that the worst-case behaviour of the new protocol (termed DFP—Deadline Floor inheritance Protocol) is the same as SRP. Indeed it leads to the same blocking term in the scheduling analysis. We argue that the new scheme is however more intuitive, removes the need to support preemption levels and we demonstrate that it can be implemented more efficiently.

The growth of InGaAs quantum wells containing relatively small amounts of Nitrogen (typically ≪5%) has emerged as an important technology for the potential achievement of optical emission and detection at the telecommunications wavelengths of 1.3 and 1.55 μm using GaAs substrates. Despite this interest there have been relatively few structural investigations on this material system, such as investigations of the critical layer thickness or the effect of the strong local distortion of the lattice due to the incorporation of Nitrogen. A series of In xGa 1-xAs 1-yN y/GaNAs multi-quantum well samples, grown by molecular beam epitaxy, has been characterised. For Nitrogen content y≤0.17, no dislocations were observed, however for higher Nitrogen content dislocations were observed for In contents x≥0.35. With increasing Nitrogen content, increasingly strong compositional modulation is observed in the wells. Moreover, we have observed that, in the wells, the bottom interface is sharper than the top interface.

In this paper, we introduce a set of experiments and analyses to comprehensively correlate the epitaxial structural defects and electrical characteristics in the pseudovertical homoepitaxial boron-doped oxygen-terminated (001) diamond metal–oxide–semiconductor capacitors (MOSCAPs). Current–voltage I(V) , capacitance–voltage C(V) , and capacitance–frequency C(f) characteristics of the MOSCAPs have been measured and analyzed, with the special focus when the structure is under positive bias, i.e., depletion regime. The defective spots, which are electrically active, have been identified as the origin of the MOSCAP’s leakage current in depletion regime. The electrical features of these killer defects are characterized thanks to micrometer scale electrical measurements equipped under scanning electron microscope. The structural features of these killer defects are explored by transmission electron microscopy. By taking into account, the electrical characteristics of the killer defects, we introduced and simulated a small signal equivalent circuit of the whole structure. The comparison between simulations with ac measurements confirms that the gate leakage current appearing in depletion regime induces an inversionlike artifact observed on diamond MOSCAPs C(f, V) .

Organic micro-contaminants (OMCs) enter in freshwaters and interact with other contaminants such as carbon nanoparticles, becoming a problem of unknown consequences for river ecosystems. Carbon nanoparticles (as fullerenes C60) are good adsorbents of organic contaminants and their interaction can potentially affect their toxicity to river biofilms. We tested the C60 interactions with selected OMCs and their effects on river biofilms in different short-term experiments. In these, river biofilms were exposed to C60 and three OMCs (triclosan, diuron, or venlafaxine) and their respective mixtures with fullerenes (C60 + each OMC). The effects were evaluated on structural, molecular, and functional descriptors of river biofilms. Our results showed that C60 did not cause toxic effects in river biofilms, whereas diuron and triclosan significantly affected the heterotrophic and phototrophic components of biofilms and venlafaxine affected only the phototrophic component. The joint exposure of C60 with venlafaxine was not producing differences with respect to the former response of the toxicant, but the overall response was antagonistic (i.e., decreased toxicity) with diuron, and synergistic (i.e., increased toxicity) with triclosan. We suggest that differences in the toxic responses could be related to the respective molecular structure of each OMC, to the concentration proportion between OMC and C60, and to the possible competition between C60 pollutants on blocking the receptors of the biological cell membranes. We conclude that the presence of C60 at low concentrations modified the toxicity of OMC to river biofilms. These interactions should therefore be considered when predicting toxicity of OMC in river ecosystems. © 2018 Freixa, Acuña, Gutierrez, Sanchís, Santos, Rodriguez-Mozaz, Farré, Barceló and Sabater., We would like to thank Ferran Romero for his help in the molecular analysis, Lorenzo Proia for his help in using MicroResp technique, and Maria Casellas for laboratory assistance.

Fog Computing is about to tremendously impact the industrial automation industry. While, today's industrial automation systems use proprietary technology to provide real-time and dependability guarantees, Fog Computing enables a paradigm shift from this proprietary operations technology (OT) to the usage of standard IT equipment and infrastructure. Thus, Fog Computing is one of the key elements of the Industrial Internet of Things and Industry 4.0. In particular, future Fog Computing will be enabled by: the increased usage of IP-protocols, e.g., standardized Deterministic Ethernet solutions from IEEE Time-Sensitive Networking (TSN) Task Group, upcoming 5G wireless standards, and interoperability standards such as OPC Unified Architecture (OPC UA). In this paper, we address the runtime reconfiguration of TSN-based Fog Computing platforms. We assume that the Fog Computing platform is composed of several heterogeneous Fog Nodes interconnected using TSN. The applications consist of hard real-time control tasks, which have strict timing requirements expressed as hard deadlines. For time-critical traffic, TSN uses the scheduled traffic type, which relies on Gate-Control Lists (GCLs) at each outgoing port of a network switch to decide the transmission of scheduled frames. We propose a heuristic algorithm to determine the GCLs at runtime such that the deadlines are satisfied and the queue usage is minimized, to accommodate non-critical traffic. The scheduling algorithm is part of a configuration agent that reacts to network changes and reconfigures the GCLs using the NETCONF network configuration protocol. Our experimental evaluation shows that the scheduling heuristic is able to quickly find good-quality GCLs.

Configuration processes of real-time networks are costly both in terms of time and engineering effort and require the system to be shutdown during the reconfiguration phase thus resulting in significant down time as well. The convergence of IT/OT technologies is bringing a whole world of possibilities for the configuration and management of real-time networks for the automation industry. With software defined networking (SDN) features like the separation of the data and control plane and standards like IEEE 802.1 developed with the goal of adding deterministic capabilities to traditionally dynamic switched Ethernet networks, the plug and play paradigm is almost around the corner. In this paper, we go one step further and start looking into the self-configuration of real-time networks. To achieve that we propose to introduce a Configuration Agent in the network, an entity that continuously monitors the network to detect changes and automatically update the configuration to adapt to such changes while maintaining desired quality of service. We present here the complete framework for the Configuration Agent that will provide self-configuration capabilities to real-time networks. The proposed framework has IEEE 802.1 as its core, but also shows how the set of standards need to be extended in order to achieve the self-configuration requirements. Concretely we examine the role of existing communication protocols like NETCONF and OPC-UA and propose the essential ingredients (managed objects) for a YANG model for the learning aspects in the bridges, including different working modes.

The Ada 2005 standard introduced "Earliest Deadline First" (EDF) as one of the supported dispatching policies. The standard specifies the "Stack Resource Protocol" (SRP) as the protocol for resource sharing among EDF tasks. During the time the SRP has been in the standard it has shown to be a relatively complex protocol. Recently, a new protocol has been proposed for resource sharing in EDF. This new protocol, called "Deadline Floor inheritance Protocol" (DFP), is simpler and more efficient than SRP while keeping all its good properties. In this paper we briefly describe both protocols and compare them from the complexity point of view. In light of its simplicity, we propose to change the language standard to include DFP instead of SRP. Some alternative modifications of the Ada Reference Manual are pointed out in order to include DFP in the most straightforward way.

Multijunction solar cell efficiency is highly sensitive to structural and chemical variations. These variations can be quantified at nm scale in InGaP/InGaAs/Ge multijunctions using transmission electron microscopy modes, e.g. diffraction contrast (DC-CTEM) and high angle annular dark field (STEM-HAADF). These studies determined the structure and the composition modulation of InGaP layers with sensitivity below 1% of In composition. To quantify the In-related variation, STEM-HAADF profiles are compared to numerically simulated ones. The fit with the experimental contrast shows local variations of 4.25%In for distances below 30 nm.

To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on 〈111〉 oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a 〈111〉-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.

Ethernet-based networks have found their way into industrial communication more than a decade ago. However, while industry and academia developed Ethernet variants to also meet real-time and fault-tolerant requirements, recent standardization efforts within the IEEE 802 will broadly bring standard IT switched Ethernet in future industrial communication networks. As first standards of IEEE 802.1 time-sensitive networking (TSN) are becoming published at the time of this writing, we review these standards and formulate further research challenges that still go beyond current standard developments. Furthermore, we report on recent research results from the RetNet project that target these research challenges.

In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV−1 cm−2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM.