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In 2015, the energy measurement of some static electricity meters was found to be sensitive to specific conducted electromagnetic disturbances with very fast current changes caused by highly nonlinear loads, leading to meter errors up to several hundred percent. This article describes new results on the electromagnetic compatibility (EMC) of 16 different meters from all over Europe when exposed to real-world disturbance signals. Those test signals were obtained from household appliances and onsite measurements at metered supply points all over Europe. The results show that also the interference signals recorded onsite can cause measurement errors as large as several hundred percent, even for meters that pass the present EMC standards. This unambiguously demonstrates that the present immunity testing standards do not cover the most disturbing conducted interference occurring in present daily-life situations due to the increased use of nonlinear electronics. Furthermore, to enable the adoption of potential new test waveforms in future standards for electricity meter testing, artificial test waveforms were constructed based on real-world waveforms using a piece-wise linear model. These artificial test waveforms were demonstrated to cause meter errors similar to those caused by the original real-life waveforms they are representing, showing that they are suitable candidates for use in improved standardization of electricity meter testing.

In the presented work solvent-free film preparation from tailored molecular glass resists, their thermal analysis, the characterization of etch resistance for plasma etching transfer processes, and the evaluation of the patterning performance using scanning probe lithography (SPL) tools, in particular electric field and thermal based SPL, are demonstrated. Therefore a series of fully aromatic spiro-based and tris-substituted twisted resist materials were systematically investigated. The materials feature very high glass transition temperatures of up to 173 °C, which allows solvent-free thin film preparation by physical vapor deposition (PVD) due to their high thermal stability. The PVD prepared films offer distinct advantages compared to spin coated films such as no pinholes, defects, or residual solvent domains, which can locally affect the film properties. In addition, PVD prepared films do not need a post apply bake (PAB) and can be precisely prepared in the nanometer range layer thickness. An observed sufficient plasma etching resistance is promising for an efficient pattern transfer even by utilizing only 10 nm thin resist films. Their lithographic resolution potential is demonstrated by a positive and a negative tone patterning using electric field, current controlled scanning probe lithography (EF-CC-SPL) at the Technical University of Ilmenau or thermal scanning probe lithography (tSPL) investigations at the IBM Research - Zurich. High resolution tSPL prepared patterns of 11 nm half pitch and at 4 nm patterning depth are demonstrated.