Author: "Marie Poumirol" - Searchworks@Jio Institute Digital Library Search Results

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44 results on '"Marie Poumirol"'

1. Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Author: Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Andrey Turchanin, Laurent Lombez, Nicolas Combe, Vincent Paillard, and Jean-Marie Poumirol
Subjects: Science
Abstract: Abstract Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
Published: 2023
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2. Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams

Author: Martin Montagnac, Yoann Brûlé, Aurélien Cuche, Jean-Marie Poumirol, Sébastien J. Weber, Jonas Müller, Guilhem Larrieu, Vincent Larrey, Franck Fournel, Olivier Boisron, Bruno Masenelli, Gérard Colas des Francs, Gonzague Agez, and Vincent Paillard
Subjects: Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467
Abstract: Abstract Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence (PL) mappings of the Eu3+ transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions. The experimental results of Raman scattering and photoluminescence are confirmed by numerical simulations of the near-field intensity in the Si nanoantenna and in the Eu3+-doped film, respectively. The branching ratios obtained from the experimental PL maps also reveal a redistribution of the electric and magnetic emission channels. Our results show that it could be possible to spatially control both electric and magnetic dipolar emission of Eu3+ ions by switching the laser beam polarization, hence the near field at the excitation wavelength, and the electric and magnetic LDOS at the emission wavelength. This paves the way for optimized geometries taking advantage of both excitation and emission processes.
Published: 2023
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3. Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Author: Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, and Bernhard Urbaszek
Subjects: Astrophysics, QB460-466, Physics, QC1-999
Abstract: Abstract Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on complementary metal–oxide–semiconductor (CMOS) compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, providing complementary information to sophisticated near-field microscopy equipment.
Published: 2023
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4. Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Author: Dorian Beret, Ioannis Paradisanos, Hassan Lamsaadi, Ziyang Gan, Emad Najafidehaghani, Antony George, Tibor Lehnert, Johannes Biskupek, Ute Kaiser, Shivangi Shree, Ana Estrada-Real, Delphine Lagarde, Xavier Marie, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Sébastien Weber, Vincent Paillard, Laurent Lombez, Jean-Marie Poumirol, Andrey Turchanin, and Bernhard Urbaszek
Subjects: Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999
Abstract: Abstract Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy of CVD grown MoSe2-WSe2 lateral heterostructures, encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal optical transition linewidths similar to high quality exfoliated monolayers, while PL imaging experiments uncover the effective excitonic diffusion length of both materials. The typical extent of the covalently bonded MoSe2-WSe2 heterojunctions is 3 nm measured by scanning transmission electron microscopy (STEM). Tip-enhanced, sub-wavelength optical spectroscopy mapping shows the high quality of the heterojunction which acts as an excitonic diode resulting in unidirectional exciton transfer from WSe2 to MoSe2.
Published: 2022
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5. High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Author: Weiwei Luo, Margherita Boselli, Jean-Marie Poumirol, Ivan Ardizzone, Jérémie Teyssier, Dirk van der Marel, Stefano Gariglio, Jean-Marc Triscone, and Alexey B. Kuzmenko
Subjects: Science
Abstract: Two-dimensional electron systems in oxide heterostructures have complex interactions that, once well understood, are expected to result in a powerful platform for electronic devices. Luo et al. show how near-field optical microscopy can perform high-resolution imaging of conducting regions in LaAlO3/SrTiO3 interfaces.
Published: 2019
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6. Electrically controlled terahertz magneto-optical phenomena in continuous and patterned graphene

Author: Jean-Marie Poumirol, Peter Q. Liu, Tetiana M. Slipchenko, Alexey Y. Nikitin, Luis Martin-Moreno, Jérôme Faist, and Alexey B. Kuzmenko
Subjects: Science
Abstract: Time reversal symmetry breaking gives rise to magnetic circular dichroism and Faraday rotation in graphene. The authors use terahertz magneto-electro-optical spectroscopy to demonstrate that electrostatic doping at a fixed magnetic field allows inversion of magnetic circular dichroism and Faraday rotation.
Published: 2017
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7. Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Clément Majorel, Rémi Demoulin, Etienne Talbot, Hervé Rinnert, Christian Girard, Fuccio Cristiano, Peter R. Wiecha, Teresa Hungria, Vincent Paillard, Arnaud Arbouet, Béatrice Pécassou, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018), and ANR-21-CE30-0042,Ti-P,Plasmons de surfaces non réciproques induit par la topologie(2021)
Subjects: Condensed Matter - Materials Science, Physics::Optics, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, semiconductor-based plasmonic, Atomic and Molecular Physics, and Optics, green dyadic method, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Physics::Atomic and Molecular Clusters, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], silicon nanocrystals, plasmon hybridization, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, Physics - Optics, Optics (physics.optics), few electrons regime, Biotechnology
Abstract: Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, the infrared spectroscopy study coupled to numerical simulations allows us to determine the number of electrically active phosphorus atoms with a precision of a few atoms. We demonstrate that LSP resonances can be supported with only about 10 free electrons per nanocrystal, confirming theoretical predictions and probing the limit of the collective nature of plasmons. We reveal the appearance of an avoided crossing behavior linked to the hybridization between the localized surface plasmon in the doped nanocrystals and the silica matrix phonon modes. Finally, a careful analysis of the scattering time dependence versus carrier density in the small size regime allows us to detect the appearance of a new scattering process at high dopant concentration, which can be explained by P clustering inside the SiNCs.
Published: 2022
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8. Near optimal graphene terahertz non-reciprocal isolator

Author: Michele Tamagnone, Clara Moldovan, Jean-Marie Poumirol, Alexey B. Kuzmenko, Adrian M. Ionescu, Juan R. Mosig, and Julien Perruisseau-Carrier
Subjects: Science
Abstract: Optical isolators, or optical diodes, allow electromagnetic radiation to travel in one direction but not the other. Here, the authors achieve unidirectional propagation of terahertz waves by taking advantage of the non-reciprocal nature of optical conductivity in magnetostatically biased graphene.
Published: 2016
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9. Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Author: Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Hervé Rinnert, Alaa E. Giba, Rémi Demoulin, Etienne Talbot, Fuccio Cristiano, Teresa Hungria, Vincent Paillard, Fabrice Gourbilleau, Caroline Bonafos, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de microcaractérisation Raimond Castaing (Centre Castaing), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse III - Paul Sabatier (UT3), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), China Scholarship Council (201801810118), and ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science
Abstract: International audience; Plasmonic hyperdoped Si nanocrystals embedded in silica synthesized via a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal cores at concentrations up to six times higher than P solid solubility in bulk Si by combining 3D mapping with atom probe tomography and analytical transmission electron microscopy. We shed light on the origin of nanocrystal growth at high P doses, which we attribute to Si recoiling atoms generated in the matrix by P implantation, which likely increase Si diffusivity and feed the Si nanocrystals. We show that dopant activation enables partial nanocrystal surface passivation that can be completed by forming gas annealing. Such surface passivation is a critical step in the formation of plasmon resonance, especially for small nanocrystals. We find that the activation rate in these small doped Si nanocrystals is the same as in bulk Si under the same doping conditions.
Published: 2023
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10. Heavily Doped Si Nanocrystals Formed in P-(SiO/SiO 2 ) Multilayers: A Promising Route for Si-Based Infrared Plasmonics

Author: Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loïc Foussat, Jean-Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Rémi Demoulin, Etienne Talbot, Michel Vergnat, Hervé Rinnert, Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), National Institute of Laser Enhanced Sciences (NILES), Cairo University, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Groupe de physique des matériaux (GPM), Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN), Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018)
Subjects: Si nanocrystals, infrared absorption spectroscopy, LSPR, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, hyperdoping, General Materials Science, Si nanocrystals phosphorus hyperdoping LSPR infrared absorption spectroscopy, phosphorus, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract: International audience; As building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix. These materials are obtained by evaporation of heavily Phosphorus-doped SiO/SiO2 multilayers in a ultrahigh vacuum chamber followed by rapid thermal annealing. For P contents between 0.7 and 1.9 at%, structural investigations at the nanoscale give clear evidence that P atoms are mainly located in the core of Si nanocrystals with concentrations reaching up to 10 at%, i.e. well beyond the solid solubility limit of P in bulk Si. Alloying and formation of SiP nanoparticles is observed for P contents exceeding 4 at% in the multilayer. Infrared absorption measurements give evidence of a localized surface plasmon resonance located in the 3 to 6 µm range. A core-shell structure was used to model Si nanocrystals embedded in a silica matrix. Based on the Mie theory and the Drude model, both the mobility and the free charge carrier density were extracted from the simulation, with values reaching 27 cm 2 V-1 s-1 and 2.3×10 20 cm-3 , respectively. This results in a dopant activation rate of about 8 %.
Published: 2023
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11. Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Author: Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, Bernhard Urbaszek, Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Technische Universität Darmstadt - Technical University of Darmstadt (TU Darmstadt), Foundation for Research and Technology - Hellas (FORTH), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), and RENATECH
Subjects: [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Optics (physics.optics), Physics - Optics
Abstract: Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayers can be placed in the near-field region of such Mie resonators. Here, we experimentally demonstrate and verify by numerical simulations coupling between a MoSe2 monolayer and the near-field of dielectric nanoresonators. Through a comparison of dark-field (DF) scattering spectroscopy and photoluminescence excitation experiments (PLE), we show that the MoSe2 absorption can be enhanced via the near-field of a nanoresonator. We demonstrate spectral tuning of the absorption via the geometry of individual Mie resonators. We show that we indeed access the optical near-field of the nanoresonators, by measuring a spectral shift between the typical near-field resonances in PLE compared to the far-field resonances in DF scattering. Our results prove that using MoSe2 as an active probe allows accessing the optical near-field above photonic nanostructures, without the requirement of highly complex near-field microscopy equipment., Main paper and supplement
Published: 2022

12. Ultracompact Binary Permanent Rare-Earth Magnet with 1.25-T Center Field and Fast-Decaying Stray Field

Author: Christoph Renner, Ivan Maggio-Aprile, Adrien Bercher, Alexey B. Kuzmenko, T. M. Slipchenko, Jean-Marie Poumirol, Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Genève = University of Geneva (UNIGE), University of Zaragoza - Universidad de Zaragoza [Zaragoza], European Commission, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), and Université de Genève (UNIGE)
Subjects: Materials science, Field (physics), Demagnetizing field, General Physics and Astronomy, Binary number, Rare-earth magnet, 02 engineering and technology, ddc:500.2, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 3. Good health, Computational physics, 0103 physical sciences, Center (algebra and category theory), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology
Abstract: We present a very-compact bicomponent-permanent-magnet design capable of generating 1.25 T in a small volume, significantly above the 0.6 T available from a single uniformly magnetized permanent magnet. In addition to the enhanced maximum field, our design drastically limits the stray field present around a standard permanent magnet. These features make it suitable for retrofitting existing experiments with a substantial magnetic field, in particular, scanning probes and optical, Raman, and photoemission spectroscopy, in diverse environments, from ambient to ultrahigh vacuum and over a wide temperature range., This work is financed by the EU Project “Graphene Flagship” (CNECT-ICT604391) and UNIGE/Unitec via the Innogap program.
Published: 2021
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13. Interband plasmon polaritons in magnetized charge-neutral graphene

Author: A. Yu. Nikitin, T. M. Slipchenko, Alexey B. Kuzmenko, Jean-Marie Poumirol, Luis Martín-Moreno, Ministerio de Economía y Competitividad (España), Agencia Estatal de Investigación (España), Ministerio de Ciencia, Innovación y Universidades (España), European Commission, Swiss National Science Foundation, Gobierno de Aragón, Eusko Jaurlaritza, University of Zaragoza - Universidad de Zaragoza [Zaragoza], Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Université de Genève (UNIGE), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Genève = University of Geneva (UNIGE), Ikerbasque - Basque Foundation for Science, Donostia International Physics Center (DIPC), and University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU)
Subjects: QC1-999, FOS: Physical sciences, Physics::Optics, General Physics and Astronomy, ddc:500.2, 02 engineering and technology, Astrophysics, 01 natural sciences, law.invention, law, 0103 physical sciences, Physics::Atomic and Molecular Clusters, Polariton, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, Plasmon, Physics, Condensed matter physics, Condensed Matter::Other, Graphene, Landau quantization, 021001 nanoscience & nanotechnology, Magnetic field, QB460-466, Condensed Matter - Other Condensed Matter, Polarization density, Charge carrier, 0210 nano-technology, Bilayer graphene, Physics - Optics, Optics (physics.optics), Other Condensed Matter (cond-mat.other)
Abstract: Studying the collective excitations in charge neutral graphene (CNG) has recently attracted a great interest because of unusual mechanisms of the charge carrier dynamics. The latter can play a crucial role for formation of recently observed in twisted bilayer CNG graphene plasmon polaritons (GPPs) associated with the interband transitions between the flat electronic bands. Besides, GPPs in CNG can be a tool providing insights into various quantum phenomena in CNG via optical experiments. However, the properties of interband GPPs in CNG are not known, even in the simplest configurations. Here, we show that magnetically-biased single-layer CNG can support interband GPPs of both transverse magnetic and transverse electric polarizations (particularly, at zero temperature). GPPs exist inside the absorption bands originating from the electronic transitions between Landau levels and are tunable by the magnetic field. We place our study into the context of potential near-field and far-field optical experiments., We acknowledge funding from Spain’s MINECO under Grant No. MAT2017-88358-C3 and funding from the European Union Seventh Framework Programme under grant agreement no. 881603 Graphene Flagship for Core 3 . L.M.M. acknowledge Aragon Government through project Q-MAD. A.Y.N. acknowledges the Basque Department of Education (grant numbers PIBA-2020-1-0014). The research for A.B.K. was supported by the Swiss National Science Foundation.
Published: 2021
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14. Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas

Author: Gonzague Agez, Frank Fournel, Kenji Watanabe, Vincent Larrey, Jean-Marie Poumirol, Vincent Paillard, Ioannis Paradisanos, Shivangi Shree, Aurélien Cuche, Takashi Taniguchi, Xavier Marie, Cedric Robert, Nicolas Mallet, Bernhard Urbaszek, Peter R. Wiecha, Guilhem Larrieu, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nano-Optique et Nanomatériaux pour l'optique (CEMES-NeO), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), ANR-17-EURE-0009,NanoX,Science et Ingénierie à l'Echelle Nano(2017), ANR-19-CE24-0020,SPINOXIDE,Injection et détection de spin dans des nanostructures tout oxyde(2019), Université Toulouse 1 Capitole (UT1)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse 1 Capitole (UT1)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Service Informatique : Développement, Exploitation et Assistance (LAAS-IDEA), Laboratory for Integrated Micro Mechatronics Systems (LIMMS), and The University of Tokyo-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Photoluminescence, excitons, Silicon, Exciton, dielectric nanoantennas, chemistry.chemical_element, FOS: Physical sciences, 02 engineering and technology, Dielectric, 01 natural sciences, Mie-tronics, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], 010309 optics, strain, 0103 physical sciences, Monolayer, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Spontaneous emission, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], ComputingMilieux_MISCELLANEOUS, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, transition metal dichalcogenides, 2D materials, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, Light emission, 0210 nano-technology, business, Biotechnology
Abstract: Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence mapping experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications., Comment: 10 pages, 5 figures
Published: 2020
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15. (Invited) High Index Dielectric Nanoantennas for Light Management, Controlled Photoluminescence of Quantum Emitters, and Semiconductor-Based Plasmonics

Author: Olivier Boisron, Anne-Sophie Royet, Frank Fournel, Vincent Paillard, Clément Majorel, Aurélien Cuche, Richard Monflier, Peter R. Wiecha, Nicolas Chery, Arnaud Arbouet, Jean-Marie Poumirol, Pablo Acosta-Alba, Caroline Bonafos, Bruno Masenelli, Nicolas Mallet, F. Gourbilleau, Fuccio Cristiano, Sebastien Kerdiles, Hervé Rinnert, Christian Girard, Guilhem Larrieu, and Vincent Larrey
Subjects: Photoluminescence, Materials science, Semiconductor, business.industry, High index, Light management, Optoelectronics, Dielectric, business, Quantum, Plasmon
Abstract: Recently, an alternative to plasmonics emerged with high-refractive index dielectric nanostructures (e.g. silicon, n≈4 in the visible range), which offer the same kind of applications as nanostructures of noble metals, but with interesting advantages and despite lower field enhancement and confinement volume. Thus, they can be used to enhance and control light scattering efficiency, nonlinear emission, Purcell effect, etc. Furthermore, silicon nanostructures offer several key advantages: absorption losses are far weaker than in metals for wavelengths longer than the direct band gap, presence of strong magnetic resonances much more difficult to obtain in metals, and access to semiconductor (CMOS) technology for reproducible large-scale nanostructure fabrication. The first mean for controlling optical properties is given by manipulating Mie resonances instead of local surface plasmon resonances (LSPR). The Mie resonances can be adjusted by modifying the size, shape, and material of those nanostructures. The other mean is obtained by doping the nanostructures generating free carriers, thus leading to tunable LSPRs as function of dopant concentration (contrary to metals which have a fixed free electron concentrations). We present two examples describing the interest of using silicon nanoantennas, which are: (i) emission rate modification of quantum emitters placed in the silicon nanoantenna near-field (we focus also on the important role of both electric and magnetic components of light), and (ii) tunable Si-based plasmonics in the MIR to NIR spectral range by tuning dopant concentration and structural parameters of Si nanostructures. We show the effect of a Si nanoantenna on the spontaneous emission of quantum emitters placed in its vicinity. The emission rate corresponds to the local density of photonic states (LDOS), which is modified by the nanostructure. Thus, it can be controlled (enhancement or quenching) by properly designing the nanoantenna. For application in field-enhanced spectroscopy and single molecule detection, the goal is to obtain the highest enhancement. We discuss results of photoluminescence enhancement of various emitters placed around simple Si nanoantennas, with a special focus on the photoluminescence of Eu3+-doped thin films deposited on the Si nanoantennas. These rare earth ions exhibit both electric dipole (ED) and magnetic dipole (MD) transitions of nearly equal strength. We show that these ED and MD transitions are very sensitive to the electric and magnetic LDOS, respectively. This can be evidenced using Si nanoantennas, which support both electric and magnetic resonances of comparable strength. Due to the very high index, they also give the unique opportunity to separate and redistribute in the nearfield the energy of the magnetic and electric parts of the electromagnetic field, otherwise inextricably connected in the far field. In a second part, we present theoretical results about doped Si nanostructures based on the Green Dyadic Method initially used for studying optical properties in metal nanostructures. We show that cuboid Si nanostructures of a few tenths of nm in each dimension, with carrier concentration around 2.6 1021 cm-3, give LSPR close to the telecom wavelength at 1.54 μm. Experimentally, an original strategy has been developed to incorporate and active dopant at concentrations above 1020 cm-3. Such strategy involves out-of-equilibrium annealing by using nanosecond laser pulses and liquid phase epitaxy. We can thus expect tuning the LSPR frequency in the MIR to NIR range depending on the dopant concentration and the nanostructure shape. Preliminary experimental results are shown and compared to theory.
Published: 2020
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16. Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces

Author: Alba Centeno, Jérôme Faist, Clara F. Moldovan, Amaia Zurutuza, Jean-Marie Poumirol, Luis Martín-Moreno, T. M. Slipchenko, Alexey B. Kuzmenko, Michele Tamagnone, Adrian M. Ionescu, Hamed Hasani, Peter Q. Liu, Juan R. Mosig, European Commission, Swiss National Science Foundation, and Hasler Foundation
Subjects: Terahertz radiation, Cyclotron resonance, FOS: Physical sciences, Physics::Optics, ddc:500.2, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, symbols.namesake, Optics, law, 0103 physical sciences, Faraday effect, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Graphene, Biasing, 021001 nanoscience & nanotechnology, Magnetic field, symbols, Optoelectronics, 0210 nano-technology, business
Abstract: Faraday rotation is a fundamental property present in all nonreciprocal optical elements. In the THz range, graphene displays strong Faraday rotation; unfortunately, it is limited to frequencies below the cyclotron resonance. Here, we show experimentally that in specifically designed metasurfaces, magnetoplasmons can be used to circumvent this limitation. We find excellent agreement between theory and experiment and provide physical insights and predictions on these phenomena. Finally, we demonstrate strong tunability in these metasurfaces using electric and magnetic field biasing., This work has been financially supported by the Swiss National Science Foundation (SNSF) under GrantsNo. 133583 and No. 168545, the Hasler Foundation under Project No. 11149, and the European Commission under Graphene Flagship (Contract No. CNECT-ICT-604391).
Published: 2018

17. Electrically controlled terahertz magneto-optical phenomena in continuous and patterned graphene

Author: Alexey Y. Nikitin, Luis Martín-Moreno, T. M. Slipchenko, Peter Q. Liu, Alexey B. Kuzmenko, Jérôme Faist, Jean-Marie Poumirol, European Commission, European Research Council, Swiss National Science Foundation, and Ministerio de Economía y Competitividad (España)
Subjects: Materials science, Terahertz radiation, Science, FOS: Physical sciences, Physics::Optics, General Physics and Astronomy, ddc:500.2, 02 engineering and technology, 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, law.invention, Condensed Matter::Materials Science, symbols.namesake, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Faraday effect, 010306 general physics, Spectroscopy, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Condensed Matter::Other, Magnetic circular dichroism, Graphene, General Chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), 3. Good health, Magnetic field, T-symmetry, symbols, 0210 nano-technology
Abstract: The magnetic circular dichroism and the Faraday rotation are the fundamental phenomena of great practical importance arising from the breaking of the time reversal symmetry by a magnetic field. In most materials, the strength and the sign of these effects can be only controlled by the field value and its orientation. Furthermore, the terahertz range is lacking materials having the ability to affect the polarization state of the light in a non-reciprocal manner. Here we demonstrate, using broadband terahertz magneto-electro-optical spectroscopy, that in graphene both the magnetic circular dichroism and the Faraday rotation can be modulated in intensity, tuned in frequency and, importantly, inverted using only electrostatic doping at a fixed magnetic field. In addition, we observe strong magneto-plasmonic resonances in a patterned array of graphene antidots, which potentially allows exploiting these magneto-optical phenomena in a broad THz range., This research was supported by the EU Graphene Flagship (Contract No. CNECT-ICT-604391 and 696656) and by the Swiss National Science Foundation (Grant No. 200020-156615). A.Y.N., T.M.S. and L.M.-M. acknowledge support from the Spanish Ministry of Economy and Competitiveness (projects MAT2014-53432-C5-1-R and MAT2014-53432-C5-4-R). J.F. acknowledges the ERC Grant ‘MUSIC’.
Published: 2017
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18. Experimental demonstration of a terahertz non-reciprocal isolator based on graphene

Author: Clara F. Moldovan, Alexey B. Kuzmenko, Julien Perruisseau-Carrier, Jean-Marie Poumirol, Juan R. Mosig, Michele Tamagnone, and Adrian M. Ionescu
Subjects: 010302 applied physics, Materials science, Fabrication, Graphene, business.industry, Terahertz radiation, Isolator, Magnetic separation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Magnetostatics, 01 natural sciences, law.invention, Optics, law, 0103 physical sciences, Reflection (physics), Optoelectronics, 0210 nano-technology, business, Reciprocal
Abstract: We present the experimental demonstration of the first terahertz isolator (working frequency > 1 THz), obtained using the non-reciprocal electromagnetic properties of graphene under magnetostatic bias. The presentation will cover in detail the design, fabrication and measurement of the device. The isolator operated in reflection for circularly polarized waves, showing two bands at 3 and 7.5 terahertz respectively. In spite of the simplicity of design and fabrication, the proposed device geometry achieves near-optimal performances. We believe these results to be groundbreaking and of great importance for the terahertz community.
Published: 2016
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19. ELECTRONIC PROPERTIES OF GRAPHENE, FEW-LAYER GRAPHENE, AND BULK GRAPHITE UNDER VERY HIGH MAGNETIC FIELD

Author: Michel Goiran, Walter Escoffier, Bertrand Raquet, Jean-Marc Broto, Jean-Marie Poumirol, and Amit Kumar
Subjects: Materials science, Condensed matter physics, Condensed Matter::Other, Graphene, Bioengineering, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Computer Science Applications, law.invention, Highly oriented pyrolytic graphite, Hall effect, law, Physics::Atomic and Molecular Clusters, General Materials Science, Graphite, Physics::Chemical Physics, Electrical and Electronic Engineering, Bilayer graphene, Graphene nanoribbons, Biotechnology, Graphene oxide paper
Abstract: In the present work, we report on the magneto-transport properties of graphitic based materials (graphene, few-layer graphene, and bulk graphite) in very high magnetic field. Quantum Hall Effect (QHE) has been studied in graphitic systems in very high pulsed magnetic field (up to B = 57 T ) and at low temperature (≤ 4 K). Graphene sample shows well-defined Hall resistance plateaus at filling factors v = 2,6,10, etc. Few-layer graphene systems display clear signatures of standard and unconventional QHE. Magneto-transport studies on bulk highly oriented pyrolytic graphite show a charge density wave transition at strong enough magnetic field as well as Hall coefficient sign reversal.
Published: 2011
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20. Isotope effect in superconducting n-doped SrTiO3

Author: D. van der Marel, Didier Jaccard, A. Stucky, G. W. Scheerer, Z. Ren, Enrico Giannini, Jean-Marie Poumirol, Céline Barreteau, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Univ Geneva, DQMP, 24 Quai Ernest, CH-1211 Geneva 4, Switzerland, DPMC, Université de Genève, and Université de Genève (UNIGE)
Subjects: Materials science, Phonon, FOS: Physical sciences, 02 engineering and technology, Electron, Soft modes, ddc:500.2, 01 natural sciences, Superconductivity (cond-mat.supr-con), Condensed Matter::Materials Science, Condensed Matter::Superconductivity, 0103 physical sciences, Kinetic isotope effect, 010306 general physics, Critical field, ComputingMilieux_MISCELLANEOUS, Superconductivity, Multidisciplinary, Condensed matter physics, Condensed Matter - Superconductivity, Doping, 021001 nanoscience & nanotechnology, Ferroelectricity, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract: We report the influence on the superconducting critical temperature Tc in doped SrTiO3 of the substitution of the natural 16O atoms by the heavier isotope 18O. We observe that for a wide range of doping this substitution causes a strong (~50%) enhancement of Tc. Also the magnetic critical field Hc2 is increased by a factor ~2. Such a strong impact on Tc and Hc2, with a sign opposite to conventional superconductors, is unprecedented. The observed effect could be the consequence of strong coupling of the doped electrons to lattice vibrations (phonons), a notion which finds support in numerous optical and photo-emission studies. The unusually large size of the observed isotope effect supports a recent model for superconductivity in these materials based on strong coupling to the ferroelectric soft modes of SrTiO3.
Published: 2016
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21. Suppressed magnetic circular dichroism and valley-selective magneto-absorption due to the effective mass anisotropy in bismuth

Author: Jean Marie Poumirol, Dirk van der Marel, Julien Levallois, Alexey B. Kuzmenko, M. K. Tran, Pieter J. de Visser, Jérémie Teyssier, Ievgeniia O. Nedoliuk, and Ctirad Uher
Subjects: Dichroism, Kerr angle, General Physics and Astronomy, FOS: Physical sciences, ddc:500.2, 02 engineering and technology, Semimetal, 01 natural sciences, Effective mass (solid-state physics), Optics, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 010306 general physics, Anisotropy, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Magnetic circular dichroism, business.industry, Landau level, Fermi surface, Landau quantization, 021001 nanoscience & nanotechnology, Polarization (waves), X-ray magnetic circular dichroism, Far-infrared, 0210 nano-technology, business, Bismuth
Abstract: We have measured the far-infrared reflectivity and Kerr angle spectra on a high-quality crystal of pure semimetallic bismuth as a function of magnetic field, from which we extract the conductivity for left- and right handed circular polarisations. The high spectral resolution allows us to separate the intraband Landau level transitions for electrons and holes. The hole transition exhibits 100% magnetic circular dichroism, it appears only for one polarisation as expected for a circular cyclotron orbit. However the dichroism for electron transitions is reduced to only $13\pm 1$%, which is quantitatively explained by the large effective mass anisotropy of the electron pockets of the Fermi surface. This observation is a signature of the mismatch between the metric experienced by the photons and the electrons. It allows for a contactless measurement of the effective mass anisotropy and provides a direction towards valley polarised magneto-optical pumping with elliptically polarised light.
Published: 2016
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22. Near optimal graphene terahertz non-reciprocal isolator

Author: Alexey B. Kuzmenko, Clara F. Moldovan, Michele Tamagnone, Julien Perruisseau-Carrier, Adrian M. Ionescu, Juan R. Mosig, and Jean-Marie Poumirol
Subjects: Materials science, Terahertz gap, Terahertz radiation, Science, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, ddc:500.2, 01 natural sciences, 7. Clean energy, Optical conductivity, General Biochemistry, Genetics and Molecular Biology, Article, law.invention, Optics, law, 0103 physical sciences, Insertion loss, Diode, 010302 applied physics, Multidisciplinary, business.industry, Graphene, Condensed Matter::Other, Isolator, General Chemistry, 021001 nanoscience & nanotechnology, Polarization (waves), Optoelectronics, 0210 nano-technology, business
Abstract: Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important open challenge made difficult by the intrinsically lossy propagation of terahertz radiation in current non-reciprocal materials. Here we report the design, fabrication and measurement of a terahertz non-reciprocal isolator for circularly polarized waves based on magnetostatically biased monolayer graphene, operating in reflection. The device exploits the non-reciprocal optical conductivity of graphene and, in spite of its simple design, it exhibits almost 20 dB of isolation and only 7.5 dB of insertion loss at 2.9 THz. Operation with linearly polarized light can be achieved using quarter-wave plates as polarization converters. These results demonstrate the superiority of graphene with respect to currently used terahertz non-reciprocal materials and pave the way to a novel class of optimal non-reciprocal devices., Optical isolators, or optical diodes, allow electromagnetic radiation to travel in one direction but not the other. Here, the authors achieve unidirectional propagation of terahertz waves by taking advantage of the non-reciprocal nature of optical conductivity in magnetostatically biased graphene.
Published: 2016

23. Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene

Author: Chun Ning Lau, David Tran, Yafis Barlas, Kevin Myhro, Jean-Marie Poumirol, Yongjin Lee, Dmitry Smirnov, Jairo Velasco, and Nathaniel Gillgren
Subjects: FOS: Physical sciences, Bioengineering, 02 engineering and technology, Quantum Hall effect, 01 natural sciences, law.invention, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, 010306 general physics, Spin (physics), Physics, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Filling factor, Graphene, Mechanical Engineering, Charge (physics), General Chemistry, Landau quantization, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Ferromagnetism, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology, Degeneracy (mathematics)
Abstract: Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital pseudospin and layer pseudospins of the lowest Landau level form spontaneous ordering. We observe intermediate quantum Hall plateaus, indicating a complete lifting of the degeneracy of the zeroth Landau level (LL) in the hole-doped regime. In charge neutral r-TLG, the orbital degeneracy is broken first, and the layer degeneracy is broken last and only the in presence of an interlayer potential U. In the phase space of U and filling factor, we observe an intriguing hexagon pattern, which is accounted for by a model based on crossings between symmetry-broken LLs.
Published: 2015

24. Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

Author: Shahriar Memaran, Mauricio Terrones, Nestor Perea-Lopez, Dmitry Smirnov, Nihar R. Pradhan, Ana Laura Elías, Simin Feng, Jean-Marie Poumirol, Luis Balicas, Pulickel M. Ajayan, Saikat Talapatra, and Daniel Rhodes
Subjects: Physics, Multidisciplinary, Fabrication, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Transistor, Dangling bond, FOS: Physical sciences, Field effect, 02 engineering and technology, Substrate (electronics), Dielectric, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, law.invention, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Field-effect transistor, 0210 nano-technology, Sheet resistance
Abstract: Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics., Comment: 35 pages including supplementary information. 7 figures in main text, 4 figures in supplementary file
Published: 2015
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25. Competition between spontaneous symmetry breaking and single-particle gaps in trilayer graphene

Author: Jairo Velasco, Kevin Myhro, Jean-Marie Poumirol, Dmitry Smirnov, David Tran, Francisco Guinea, Yafis Barlas, Chun Ning Lau, Yongjin Lee, Nathaniel Gillgren, National Science Foundation (US), State of Florida, University of California, Department of Energy (US), and Defense Advanced Research Projects Agency (US)
Subjects: Physics, Multidisciplinary, Condensed matter physics, Graphene, Spontaneous symmetry breaking, General Physics and Astronomy, General Chemistry, General Biochemistry, Genetics and Molecular Biology, law.invention, Competition (economics), law, Simple (abstract algebra), Quantum mechanics, Particle
Abstract: Many physical phenomena can be understood by single-particle physics; that is, treating particles as non-interacting entities. When this fails, many-body interactions lead to spontaneous symmetry breaking and phenomena such as fundamental particles' mass generation, superconductivity and magnetism. Competition between single-particle and many-body physics leads to rich phase diagrams. Here we show that rhombohedral-stacked trilayer graphene offers an exciting platform for studying such interplay, in which we observe a giant intrinsic gap ~42 meV that can be partially suppressed by an interlayer potential, a parallel magnetic field or a critical temperature ~36 K. Among the proposed correlated phases with spatial uniformity, our results are most consistent with a layer antiferromagnetic state with broken time reversal symmetry. These results reflect the interplay between externally induced and spontaneous symmetry breaking whose relative strengths are tunable by external fields, and provide insight into other low-dimensional systems., We thank R. Cote for discussions. Y.L., K.M. and C.N.L. are supported by DOE BES Division under grant no. ER 46940-DE-SC0010597. Part of this work was performed at NHMFL that is supported by NSF/DMR-0654118, the State of Florida, and DOE. D.T. is supported by NSF DMR/1106358. Y.B. is supported by CONSEPT center at UCR. Nanofabrication and supplies are supported in part by DMEA H94003-10-2-1003 and CONSEPT center.
Published: 2014

26. New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

Author: Mauricio Terrones, Minh An T. Nguyen, Humberto Terrones, Zhong Lin, Thomas E. Mallouk, Simin Feng, Jean-Marie Poumirol, Luis Balicas, Ana Laura Elías, Daniel Rhodes, Marcos A. Pimenta, Dmitry Smirnov, Nihar R. Pradhan, and E. del Corro
Subjects: Imagination, Multidisciplinary, Materials science, Chemical substance, Condensed matter physics, Phonon, media_common.quotation_subject, First order, Article, symbols.namesake, Transition metal, Monolayer, symbols, Science, technology and society, Raman spectroscopy, media_common
Abstract: Although the main Raman features of semiconducting transition metal dichalcogenides are well known for the monolayer and bulk, there are important differences exhibited by few layered systems which have not been fully addressed. WSe2 samples were synthesized and ab-initio calculations carried out. We calculated phonon dispersions and Raman-active modes in layered systems: WSe2, MoSe2, WS2 and MoS2 ranging from monolayers to five-layers and the bulk. First, we confirmed that as the number of layers increase, the E′, E″ and E2g modes shift to lower frequencies, and the A′1 and A1g modes shift to higher frequencies. Second, new high frequency first order A′1 and A1g modes appear, explaining recently reported experimental data for WSe2, MoSe2 and MoS2. Third, splitting of modes around A′1 and A1g is found which explains those observed in MoSe2. Finally, exterior and interior layers possess different vibrational frequencies. Therefore, it is now possible to precisely identify few-layered STMD.
Published: 2014
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27. Magnetoplasmons in Quasineutral Epitaxial Graphene Nanoribbons

Author: W. A. de Heer, Claire Berger, Dmitry Smirnov, Zhigang Jiang, Wenlong Yu, Wei Pan, M. L. Smith, Xiaobo Chen, Mark Oliver Goerbig, Taisuke Ohta, Jean-Marie Poumirol, National High Magnetic Field Laboratory, School of Physics [Atlanta], Georgia Institute of Technology [Atlanta], Circuits électroniques quantiques Alpes (QuantECA), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Sandia National Laboratories [Albuquerque] (SNL), Sandia National Laboratories - Corporation, Laboratoire de Physique des Solides (LPS), and Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Materials science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Graphene, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, Landau quantization, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, law.invention, law, [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Dispersion relation, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Physics::Atomic and Molecular Clusters, Quasiparticle, Surface plasmon resonance, 010306 general physics, 0210 nano-technology, Spectroscopy, Quantum, Graphene nanoribbons
Abstract: International audience; We present infrared transmission spectroscopy study of the inter-Landau-level excitations in quasi-neutral epitaxial graphene nanoribbon arrays. We observed a substantial deviation in energy of the $L_{0(-1)}$$\to$$L_{1(0)}$ transition from the characteristic square root magnetic-field dependence of two-dimensional graphene. This deviation arises from the formation of upper-hybrid mode between the Landau level transition and the plasmon resonance. In the quantum regime the hybrid mode exhibits a distinct dispersion relation, markedly different from that expected for conventional two-dimensional systems and highly doped graphene.
Published: 2013
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28. Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy

Author: Antonio Lombardo, Jean-Marie Poumirol, Y-J Kim, Dmitry Smirnov, Oleksiy Kashuba, Thanasis Georgiou, Nikolai G. Kalugin, Junichiro Kono, Yong-Jin Kim, Andrea C. Ferrari, Vladimir I. Fal'ko, Kostya S. Novoselov, Lombardo, Antonio [0000-0003-3088-6458], Ferrari, Andrea [0000-0003-0907-9993], and Apollo - University of Cambridge Repository
Subjects: Materials science, Phonon, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, 01 natural sciences, law.invention, symbols.namesake, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, cond-mat.mes-hall, Coherent anti-Stokes Raman spectroscopy, 010306 general physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Filling factor, Scattering, Graphene, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, X-ray Raman scattering, symbols, 0210 nano-technology, Raman spectroscopy, Raman scattering
Abstract: We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.
Published: 2013

29. Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well

Author: Yu. B. Vasilyev, Jonathan Ludwig, Nikolay N. Mikhailov, Oskar Vafek, Zhigang Jiang, Dmitry Smirnov, and Jean-Marie Poumirol
Subjects: Physics, Condensed Matter::Quantum Gases, Condensed Matter - Materials Science, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Band gap, Dirac (software), Cyclotron resonance, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Landau quantization, Condensed Matter Physics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 7. Clean energy, Electronic, Optical and Magnetic Materials, Magnetic field, symbols.namesake, Gapless playback, Dirac fermion, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), symbols, Quantum well
Abstract: We report on Landau level spectroscopy studies of two HgTe quantum wells (QWs) near or at the critical well thickness, where the band gap vanishes. In magnetic fields up to $B$=16T, oriented perpendicular to the QW plane, we observe a $\sqrt{B}$ dependence for the energy of the dominant cyclotron resonance (CR) transition characteristic of two-dimensional Dirac fermions. The dominant CR line exhibits either a single or double absorption lineshape for the gapless or gapped QW. Using an effective Dirac model, we deduce the band velocity of single valley Dirac fermions in gapless HgTe quantum wells, $v_F=6.4 \times10^5$ m/s, and interpret the double absorption of the gapped QW as resulting from the addition of a small relativistic mass.
Published: 2013
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30. High Field Quantum Hall Effect in Disordered Graphene Near the Dirac Point

Author: Michel Goiran, Francesco Rossella, Enrique Diez, Bertrand Raquet, Amit Kumar, Walter Escoffier, Jean-Marie Poumirol, Vittorio Bellani, and Mario Amado
Subjects: Physics, Condensed matter physics, Filling factor, Graphene, Landau level, Charge density, Conductance, Fermi energy, Landau quantization, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Carrier density, Dirac point, High magnetic field, Quantum spin Hall effect, law
Abstract: We investigate on the conductance properties of low mobility graphene in the quantum Hall regime at filling factor less than ${\textit v}=2.$ For this purpose, we compare the high-field longitudinal and Hall resistances of two graphene samples with different mobility. We show that the presence of “charge density puddles”, most probably due to charged impurities, particularly affect the fundamental high field electronic properties of graphene. In particular, the Hall resistance plateau at $R_{XY}=h/2e^2$ is unstable and shows a non-monotonic behaviour when the system is driven close to the Dirac point. This phenomenon is ascribed to as Fermi level pinning in the Landau Level sub-bands of graphene, in the presence of disorder.
Published: 2012
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31. Terahertz radiation rectification as a probe of universal conductance fluctuations in graphene, Teranano2011 (Invited paper),Extended Abstract 1(1) 25I-N-10 (2011)

Author: Dominique Coquillat, Nina Diakonova, Jean-Marie Poumirol, Michel Goiran, Walter Escoffier, Bertrand Raquet, Frederic Teppe, Michel Dyakonov, Wojciech Knap, Laboratoire Charles Coulomb (L2C), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract: Terahertz radiation rectification as a probe of universal conductance fluctuations in graphene
Published: 2011

32. Integer quantum Hall effect in trilayer graphene

Author: Francisco Guinea, Clément Faugeras, Daniel P. Arovas, Michael M. Fogler, Michel Goiran, Walter Escoffier, Bertrand Raquet, Stephan Roche, Amit Kumar, Jean-Marie Poumirol, Helmholtz zentrum für Schwerionenforschung GmbH (GSI), Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G), Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Thermal Hall effect, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, Electron, Quantum Hall effect, 01 natural sciences, law.invention, Condensed Matter::Materials Science, Quantum spin Hall effect, law, Electrical resistivity and conductivity, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Condensed Matter::Other, Graphene, Filling factor, Landau quantization, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], 0210 nano-technology
Abstract: The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder., 5 pages, 4 figures
Published: 2011
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33. Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy

Author: Marius Millot, Jean-Marie Poumirol, Oliver Portugall, Michel Goiran, Iulian Gherasoiu, Nicolas Ubrig, Jean-Marc Broto, Jean Leotin, Wladek Walukiewicz, and Sylvie George
Subjects: 010302 applied physics, Physics, Indium nitride, Condensed matter physics, Quantum oscillations, 02 engineering and technology, Landau quantization, Electronic structure, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Shubnikov–de Haas effect, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, chemistry.chemical_compound, Effective mass (solid-state physics), chemistry, 0103 physical sciences, 0210 nano-technology, Electronic band structure, Spectroscopy
Abstract: We report on oscillatory magnetoabsorption experiments on several indium nitride (InN) epilayers under a pulsed magnetic field up to 56 T. This optical technique is uniquely suited to probe the bulk electronic structure in the vicinity of the fundamental band edge by Landau level spectroscopy. We discuss these results in light of two recent studies on the InN band structure by high-field magnetotransport [Goiran et al., Appl. Phys. Lett. 96, 052117 (2010)] and magneto-photoluminescence [Pettinari et al., Phys. Rev. B 79, 165207 (2009)]. In particular, we evidence a strong nonparabolicity of the conduction band and demonstrate that the electron effective mass ${m}_{e\ensuremath{\perp}0}^{*}=0.055{m}_{0}$ measured by Shubnikov--de Haas oscillations is confirmed by the magneto-optical experiments.
Published: 2011
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34. Unveiling the Magnetic Structure of Graphene Nanoribbons

Author: Walter Escoffier, Jean-Marc Broto, Michel Goiran, Stephan Roche, Rebeca Ribeiro, Alessandro Cresti, Bertrand Raquet, Jean-Marie Poumirol, Department of Computer Science [York] (CS-YORK), University of York [York, UK], Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire National des Champs Magnétiques Pulsés (LNCMP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Fondation Nanosciences, Agence Nationale de la Recherche (France), European Commission, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: Physics, Magnetoresistance, Magnetic structure, Condensed matter physics, General Physics and Astronomy, Magnetic confinement fusion, 02 engineering and technology, Landau quantization, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], symbols.namesake, Dirac fermion, Quantum spin Hall effect, 0103 physical sciences, symbols, 010306 general physics, 0210 nano-technology, Graphene nanoribbons, ComputingMilieux_MISCELLANEOUS
Abstract: We perform magnetotransport measurements in lithographically patterned graphene nanoribbons down to a 70 nm width. The electronic spectrum fragments into an unusual Landau levels pattern, characteristic of Dirac fermion confinement. The two-terminal magnetoresistance reveals the onset of magnetoelectronic subbands, edge currents and quantized Hall conductance. We bring evidence that the magnetic confinement at the edges unveils the valley degeneracy lifting originating from the electronic confinement. Quantum simulations suggest some disorder threshold at the origin of mixing between chiral magnetic edge states and disappearance of quantum Hall effect. © 2011 American Physical Society., Part of this work is supported by EuroMagNET, contract No. 228043, the NANOSIM-GRAPHENE Project No. ANR-09-NANO-016-01 and the MAGBiSy Project No. ANR-08-JCJC-0034-01. A. C. acknowledges the support of Fondation Nanosciences via the RTRA Dispograph project.
Published: 2011
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35. Anodic bonded graphene

Author: Jean-Claude Bouillard, Olivier Beyssac, Jean-Marie Poumirol, R. Kumar, Dario Taverna, Walter Escoffier, Roger Gohler, Abhay Shukla, William Sacks, Mohamed Boukhicha, Emanuelle Lacaze, Massimiliano Marangolo, Adrian Balan, Université Pierre et Marie Curie - Paris 6 (UPMC), Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), de Lourmel, Université Fédérale Toulouse Midi-Pyrénées, and Université de Toulouse (UT)
Subjects: Materials science, Acoustics and Ultrasonics, Graphene, Graphene foam, Nanotechnology, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, law, Anodic bonding, 0103 physical sciences, Physical Sciences, symbols, Graphite, 010306 general physics, 0210 nano-technology, Raman spectroscopy, Graphene nanoribbons, Graphene oxide paper
Abstract: International audience; We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, a graphite precursor in flake form is bonded to a glass substrate with the help of an electrostatic field and then cleaved off to leave few layer graphene on the substrate. Now that several methods are available for producing graphene, the relevance of our method is in its simplicity and practicality for producing graphene samples of about 100 µm lateral dimensions. This method is also extensible to other layered materials. We discuss some detailed aspects of the fabrication and results from Raman spectroscopy, local probe microscopy, and transport measurements on these samples.
Published: 2010
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36. Impact of disorder on theν=2quantum Hall plateau in graphene

Author: Michel Goiran, Amit Kumar, Bertrand Raquet, Jean-Marie Poumirol, and Walter Escoffier
Subjects: Physics, Condensed matter physics, Graphene, education, Thermal Hall effect, Quantum oscillations, Landau quantization, Quantum Hall effect, equipment and supplies, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, Quantum spin Hall effect, law, Composite fermion, Fractional quantum Hall effect, psychological phenomena and processes
Abstract: We investigate the quantum Hall regime in a graphene flake with different levels of disorder. Under high magnetic field, an unexpected decrease in the Hall resistance occurs when only the zeroth-energy Landau level is populated. The presence of disorder rules out the expected appearance of the $\ensuremath{\nu}=0$ quantum Hall plateau as in the case of pristine graphene. Instead, we propose an alternative explanation based on the coexistence of two types of carriers, electrons and holes, induced by high magnetic field, in the presence of disorder.
Published: 2010
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37. Electric field doping of few layer graphene

Author: Walter Escoffier, Bertrand Raquet, R. Yang, Michel Goiran, Jean-Marc Broto, Jean-Marie Poumirol, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire National des Champs Magnétiques Pulsés (LNCMP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Subjects: Materials science, 02 engineering and technology, Quantum Hall effect, 01 natural sciences, 7. Clean energy, law.invention, symbols.namesake, law, Electric field, 0103 physical sciences, Graphite, Electrical and Electronic Engineering, 010306 general physics, ComputingMilieux_MISCELLANEOUS, Condensed matter physics, Graphene, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Dirac fermion, symbols, Charge carrier, 0210 nano-technology, Bilayer graphene, Graphene nanoribbons
Abstract: We report on magneto-transport and quantum Hall effect measurements in a few-layer graphene sample in magnetic fields up to 55 T applied perpendicular to the layers. Few-layer graphene systems consist of several planes of carbon atoms and exhibit complex electronic band structures. Regarding their transport properties, they are natural candidates to study the cross over from 3D graphite to 2D graphene. The sample, obtained by micro-mechanical exfoliation of graphite, displays a p-type conductivity that was tuned by the application of a back gate voltage. The Hall and longitudinal resistances were simultaneously recorded and analyzed. We find evidences of two regimes of charge carrier dynamics driven by massive and Dirac fermions, respectively, depending on the gate voltage. The Dirac fermion signatures are observed from 2 to 120 K.
Published: 2010

38. Electron-hole coexistence in disordered graphene probed by high-field magneto-transport

Author: Bertrand Raquet, Michel Goiran, Walter Escoffier, Jean-Marc Broto, Amit Kumar, Jean-Marie Poumirol, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Subjects: Physics, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, Filling factor, Doping, General Physics and Astronomy, FOS: Physical sciences, 02 engineering and technology, Electron hole, Electron, Quantum Hall effect, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, law.invention, Magnetic field, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], Amplitude, law, 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; We report on magneto-transport measurement in disordered graphene under a pulsed magnetic field of up to 57 T. For large electron or hole doping, the system displays the expected anomalous integer quantum Hall effect (IQHE) specific to graphene down to the filling factor nu = 2. In the close vicinity of the charge neutrality point, the system breaks up into coexisting puddles of holes and electrons, leading to a vanishing Hall and finite longitudinal resistance with no hint of divergence at very high magnetic field. Large resistance fluctuations are observed near the Dirac point. They are interpreted as the natural consequence of the presence of electron and hole puddles. The magnetic field at which the amplitude of the fluctuations is the largest is directly linked to the mean size of the puddles.
Published: 2010
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39. Edge magnetotransport fingerprints in disordered graphene nanoribbons

Author: Michel Goiran, Xinran Wang, Xiaolin Li, Jean-Marie Poumirol, Hongjie Dai, Walter Escoffier, Stephan Roche, Alessandro Cresti, Bertrand Raquet, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de recherche en Biologie Cellulaire (CRBM), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1), European Commission, Agence Nationale de la Recherche (France), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, Condensed matter physics, 02 engineering and technology, Edge (geometry), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Symmetry (physics), Electronic, Optical and Magnetic Materials, Magnetic field, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], 0103 physical sciences, Ribbon, Coulomb, 010306 general physics, 0210 nano-technology, Magneto, Quantum, Graphene nanoribbons, ComputingMilieux_MISCELLANEOUS
Abstract: 4 páginas, 4 figuras.-- PACS number(s): 72.80.Vp, 73.22.Pr, 75.47.-m.-- et al., We report on (magneto)transport experiments in chemically derived narrow graphene nanoribbons under high magnetic fields (up to 60 T). Evidences of field-dependent electronic confinement are given and allow estimating the possible ribbon edge symmetry. A large positive magnetoconductance indicates a strong suppression of backscattering induced by the magnetic field. Such scenario is supported by tight-binding calculations which consider different types of underlying disorders (smooth edge disorder and long-range Coulomb scatterers)., Part of this work was supported by EuroMagNET, Contract No. 228043. S.R. acknowledges the ANR/P3N2009 (Project No. ANR-09-NANO-016-01).
Published: 2010
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40. High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite

Author: Walter Escoffier, Bertrand Raquet, Amit Kumar, J.C. Pivin, Jean-Marie Poumirol, Michel Goiran, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut Jean Lamour (IJL), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: FOS: Physical sciences, 01 natural sciences, 010305 fluids & plasmas, Density wave theory, Highly oriented pyrolytic graphite, Hall effect, DEPENDENCE, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, General Materials Science, ELECTRONIC PHASE-TRANSITION, Graphite, 010306 general physics, NBSE3, ComputingMilieux_MISCELLANEOUS, Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, Electrostatic induction, Condensed Matter Physics, TRANSPORT, Magnetic field, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], Charge density wave, Sign (mathematics)
Abstract: We report on the investigation of magnetic field induced charge density waves and Hall coefficient sign reversal in a quasi-two-dimensional electronic system of highly oriented pyrolytic graphite under very strong magnetic field. The change of Hall sign coefficient from negative to positive occurs at low temperature and high magnetic field just after the charge density wave transition, suggesting the role of hole-like quasi-particles in this effect. Angular dependent measurements show that the charge density wave transition and Hall sign reversal fields follow the magnetic field component along the c-axis of graphite.
Published: 2010
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41. Erratum: Electron cyclotron effective mass in indium nitride [Appl. Phys. Lett. 96, 052117 (2010)]

Author: Michel Goiran, Wladek Walukiewicz, Marius Millot, Iulian Gherasoiu, Jean-Marie Poumirol, and Jean Leotin
Subjects: Indium nitride, Physics and Astronomy (miscellaneous), Condensed matter physics, Band gap, Cyclotron, Wide-bandgap semiconductor, Electron, Semimetal, law.invention, chemistry.chemical_compound, Effective mass (solid-state physics), chemistry, law, Atomic physics
Published: 2011
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42. Electron cyclotron effective mass in indium nitride

Author: Marius Millot, Wladek Walukiewicz, Jean-Marie Poumirol, Iulian Gherasoiu, Jean Leotin, Michel Goiran, Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)
Subjects: 010302 applied physics, Electron density, Indium nitride, Physics and Astronomy (miscellaneous), Cyclotron, Wide-bandgap semiconductor, 02 engineering and technology, 021001 nanoscience & nanotechnology, Polaron, 01 natural sciences, Fourier transform ion cyclotron resonance, law.invention, [PHYS.COND.CM-S]Physics [physics]/Condensed Matter [cond-mat]/Superconductivity [cond-mat.supr-con], chemistry.chemical_compound, Effective mass (solid-state physics), chemistry, law, 0103 physical sciences, Atomic physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Ion cyclotron resonance
Abstract: We report on cyclotron effective mass measurement in indium nitride epilayers grown on c-sapphire, using the thermal damping of Shubnikov-de-Haas oscillations obtained in the temperature range 2–70 K and under magnetic field up to 60 T. We unravel an isotropic electron cyclotron effective mass equal to 0.062±0.002m0 for samples having electron concentration near 1018 cm−3. After nonparabolicity and polaron corrections we estimate a bare mass at the bottom of the band equal to 0.055±0.002m0.
Published: 2010
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43. Terahertz Rectification as Probe of quantum phenomena in Graphene

Author: Dominique Coquillat, Nina Diakonova, Ribeiro, R., Michel Goiran, Jean-Marie Poumirol, Walter Escoffier, Bertrand Raquet, Dmytro But, Petre Buzatu, Christophe Consejo, Frederic Teppe, Wojciech Knap, Laboratoire Charles Coulomb (L2C), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics::Optics, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]
Abstract: In this work, we undertake detailed studies of the mesoscopic rectification of an ac current at THz frequency induced by the incoming radiation for back-gated graphene field effect transistors. Using THz detection as a probe, we explore the nonlinear behavior of the quantum fluctuations and weak localization.

44. Anodic bonded graphene.

Author: Adrian Balan, Rakesh Kumar, Mohamed Boukhicha, Olivier Beyssac, Claude Bouillard, Dario Taverna, William Sacks, Massimiliano Marangolo, Emanuelle Lacaze, Roger Gohler, Walter Escoffier, Marie Poumirol, and Abhay Shukla
Subjects: GRAPHENE, SEALING (Technology), CHEMICAL sample preparation, GRAPHITE, SUBSTRATES (Materials science), ELECTROSTATICS, METHODOLOGY, RAMAN spectroscopy
Abstract: We show how to prepare graphene samples on a glass substrate with the anodic bonding method. In this method, a graphite precursor in flake form is bonded to a glass substrate with the help of an electrostatic field and then cleaved off to leave few layer graphene on the substrate. Now that several methods are available for producing graphene, the relevance of our method is in its simplicity and practicality for producing graphene samples of about 100 um lateral dimensions. This method is also extensible to other layered materials. We discuss some detailed aspects of the fabrication and results from Raman spectroscopy, local probe microscopy and transport measurements on these samples. [ABSTRACT FROM AUTHOR]
Published: 2010
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